TRANSISTOR SMD MARKING CODE w2

Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
Contextual Info: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright

marking c1g

Abstract: marking c1h UPC2712TB pt 7313
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2711TB, UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER TYPICAL PERFORMANCE CURVES FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

C1H mmic

Abstract: UPC2711TB UPC2712TB-E3 mmic e3 UPC2711TB-E3 UPC2712TB c1g nec marking C1H mmic
Contextual Info: PRELIMINARY DATA SHEET 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES UPC2711TB UPC2712TB TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

am tuners

Abstract: Sat Tuner Application Note marking c1g 865 marking power amplifier diode gp 421 marking 865 marking 865 mmic transistor 936 UPC2711 UPC2711TB
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2711TB, UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER TYPICAL PERFORMANCE CURVES FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

Contextual Info: a :? '> í SEC UPC2709T UPC2712T 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES_ • WIDE FREQUENCY RESPONSE: 2.5 GHz • HIGH GAIN: 23 dB UPC2709T • SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T) • 5 V SINGLE SUPPLY VOLTAGE • SUPER SMALL PACKAGE

ASR-10SS

Abstract: YAGEO RC0805 raytheon klystron YAGEO RC0402 BGA2715-17 2.4ghz lnb 92F566 BUELA30K gps glonass BGA6489
Contextual Info: RF 手册 第 5 版 附录 Philips Semiconductors RF 产品的生产与设计手册 RF 手册附录 第5版 RF 产品的产品和设计手册 2004 年 10 月 4322 252 06394 RF 手册 附录 Koninklijke Philips Electronics N.V. 2004 年 10 月 1 of 36 RF 手册 第 5 版 附录

Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿iPC3210TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ^¡PC3210TB is a silicon monolithic integrated circuits designed as w ideband amplifier. The ^¡PC3210TB is suitable to system s required w ideband operation from HF to L band.

C3H marking

Abstract: C3K marking marking c1g PC3224TB marking c3k PC3215TB C3k mmic marking c1h capacitor feed-through C1H mmic
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The PC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION The PC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT juPC3210TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ¿¿PC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The /iPC3210TB is

marking C3Z

Abstract: marking c1h PC3242TB PC2712TB "Marking k2" mmic
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The PC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

C3H marking

Abstract: uPC3215TB-E3 UPC2712T marking C3h c3h nec VP15-00-3 marking c1h F MARKING 6PIN
Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3215TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3215TB is a silicon monolithic IC designed as wideband amplifier. The µPC3215TB is suitable to systems required wideband operation from HF to L band.

nec d822

Abstract: D1289 NEC D1481 NEC D382 D1046 D1384 D1409 D1549 D1197 D552
Contextual Info: DATA SHEET SHEET DATA BIPOLAR ANALOG INTEGRATED CIRCUITS PPC2711TB, PPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR DBS TUNERS DESCRIPTION The PPC2711TB and PPC2712TB are silicon monolithic integrated circuits designed as buffer amplifier for DBS

pt 7313

Abstract: nec marking power amplifier upc
Contextual Info: ” 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES UPC2711TB UPC2712TB TYPICAL PERFORMANCE CURVES • HIGH D EN SITY SUR FA CE M O UNTING: 6 pin super m inim old or SO T- 363 package GAIN vs. FREQUENCY • SUPPLY VO LTAG E: V c c = 4.5 to 5.5 V

uPC2712

Abstract: PC2713T marking c1g GE 7313 upc2711tb UPC2712TB
Contextual Info: DATA SHEET SHEET DATA BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2711TB, µPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC2711TB and µPC2712TB are silicon monolithic integrated circuits designed as buffer amplifier for DBS tuners. These ICs are packaged in super minimold package which is smaller than conventional minimold.

UPC3227TB

Abstract: marking C1G
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3227TB 5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3227TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿ iP C 3 2 1 0 T B 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ^¡PC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The ^¡PC3210TB is suitable to systems required wideband operation from HF to L band.

pt 7313

Abstract: diode gp 421 UPC2711TB UPC2711TB-E3 UPC2712TB UPC2712TB-E3
Contextual Info: UPC2711TB UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V UPC2712TB • WIDEBAND RESPONSE:

MOSFET TRANSISTOR SMD MARKING CODE nh

Abstract: ASR-10SS Kathrein Antennas Kathrein gsm ANTENNA murata filter cfm 455 d TRANSISTOR C 6090 EQUIVALENT 20000w audio amplifier schematic circuit diagram marking code C1H mmic murata filter cfm 455 k A08 smd transistor
Contextual Info: 4th edition RF Manual, appendix Page: 1 Philips RF Manual product & design manual for RF small signal discretes 4th edition March 2004 APPENDIX / documentation/rf_manual Document number: 4322 252 06388

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿ iP C 3 2 1 0 T B 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ^¡PC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The ^¡PC3210TB is suitable to systems required wideband operation from HF to L band.

C3H marking

Abstract: UPC3224TB HS350 marking c1h UPC2712TB c3k cel
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

HS350

Abstract: C3K marking uPC2711 marking C3K marking c1g
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.

uPC3224TB

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3227TB 5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3227TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3215TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3215TB is a silicon monolithic IC designed as wideband amplifier. The µPC3215TB is suitable to systems required wideband operation from HF to L band.