Untitled
Abstract: No abstract text available
Text: 9 =W S age C3 P H Ro oir / See E - C4 E C3 N - C4 N CAPACITANCE NETWORKS - RC NETWORKS Tension nominale / Rated voltage URC V 2 3 2 3 4 1 2 3 4 0,78 0,45 C1 = C2 = C3 = C4 1 C1 1 2 3 C2 4 C3 2 C4 3 4 Sur demande / On request : C1 # C2 # C3 # C4 Consulter notre Service Commercial
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E12E24E48
200il
F-67441
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KDS122
Abstract: C3-12 C312
Text: SEMICONDUCTOR KDS122 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 C3 1 2 Item Marking Description Device Mark C3 KDS122 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KDS122
KDS122
C3-12
C312
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KDS226
Abstract: MARK C3 SOT23 KDS226 LOT C-312 Marking C3 SOT23 C3-12 C312 marking C3
Text: SEMICONDUCTOR KDS226 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 C3 1 2 Item Marking Description Device Mark C3 KDS226 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KDS226
OT-23
KDS226
MARK C3 SOT23
KDS226 LOT
C-312
Marking C3 SOT23
C3-12
C312
marking C3
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a3 sot143
Abstract: BAR60 BAR61 VPS05178 MARKING 61s
Text: BAR60, BAR61 Silicon PIN Diodes 3 RF switch, RF attenuator for frequencies above 10 MHz 4 2 BAR60 BAR61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT143 BAR61 61s 1=C2/C3
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BAR60,
BAR61
BAR60
VPS05178
EHA07013
EHA07014
OT143
a3 sot143
BAR60
BAR61
VPS05178
MARKING 61s
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MB74LS04
Abstract: MB74LS quartz 12000 marking MB8850H MC74HC04 MB8850 MB74LS0 MIL-STD-202E 103A
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS07-20101-7E Resonator Piezoelectric Resonator FAR Family C1, C3, C4 series • DESCRIPTION Fujitsu resonators (C1, C3, C4 series) feature originally developed single crystals with a high electromechanical
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DS07-20101-7E
F9703
MB74LS04
MB74LS
quartz 12000 marking
MB8850H
MC74HC04
MB8850
MB74LS0
MIL-STD-202E 103A
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C2C36
Abstract: VPW09197 BAS21U SC74
Text: BAS21U Silicon Switching Diode Array 5 4 6 For high-speed switching applications Internal galvanic isolated diodes 3 2 in one package 1 VPW09197 C1 C2 C3 6 5 4 1 2 3 A1 A2 A3 EHA07291 Type BAS21U Marking Pin Configuration Package JSs 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74
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BAS21U
VPW09197
EHA07291
EHB00028
Aug-07-2001
C2C36
VPW09197
BAS21U
SC74
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marking 6c1
Abstract: BAS16U SC74
Text: BAS16U Silicon Switching Diode Array 5 For high-speed switching applications 4 6 Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74
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BAS16U
VPW09197
EHA07291
Jul-06-2001
EHB00025
EHB00022
marking 6c1
BAS16U
SC74
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SC74
Abstract: JSs diode
Text: BAS 21U Silicon Switching Diode Array For high-speed switching applications 5 4 6 Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 21U JSs Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74
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VPW09197
EHA07291
SC-74
Apr-16-1999
EHB00029
EHB00027
SC74
JSs diode
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Untitled
Abstract: No abstract text available
Text: BAS 16U Silicon Switching Diode Array For high-speed switching applications 5 4 6 Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74
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VPW09197
EHA07291
SC-74
Apr-21-1999
EHB00025
EHB00022
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MB74LS04
Abstract: MB74LS MB8850H MC74HC04 MB8850
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-20101-7E Resonator Piezoelectric Resonator FAR Family C1, C3, C4 series • DESCRIPTION Fujitsu resonators (C1, C3, C4 series) feature originally developed single crystals with a high electromechanical coupling coefficient (LiTaO3: lithium tantalate, LiNbO3: lithium niobate), the result is compact packaging. Three
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DS07-20101-7E
MB74LS04
MB74LS
MB8850H
MC74HC04
MB8850
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MB74LS04
Abstract: MB74LS0 MB74 MB8850H MC74HC04
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-20101-7E Resonator Piezoelectric Resonator FAR Family C1, C3, C4 series • DESCRIPTION Fujitsu resonators (C1, C3, C4 series) feature originally developed single crystals with a high electromechanical coupling coefficient (LiTaO3: lithium tantalate, LiNbO3: lithium niobate), the result is compact packaging. Three
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DS07-20101-7E
F9703
MB74LS04
MB74LS0
MB74
MB8850H
MC74HC04
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DS07-10205-1E
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS07-10205-1E Resonator Piezoelectric Resonator 4 to 20 MHz FAR Family (C3 series M/N type) • DESCRIPTION The features of the C3 series (M,N Type) resonators are compact and high stability. They are fabricated on a
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DS07-10205-1E
F9801
DS07-10205-1E
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entrelec terminal block
Abstract: RC55 2616
Text: 020128 T02050 D 2,5/5 C3.L Terminal blocks spring connection D 2,5/5 C3.L.L Spacing 5 mm +0,05 .198" Spacing 5 mm +0,05 (.198") for sensors/actuators DIN 3 • • center of rail center of rail Block for sensors/actuators with bidirectional green LED 24V=
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T02050
entrelec terminal block
RC55
2616
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Untitled
Abstract: No abstract text available
Text: HD3SS3412 www.ti.com SLAS828B – FEBRUARY 2012 – REVISED NOVEMBER 2013 4-Channel High-Performance Differential Switch 1 NC VDD A1+ C0C1+ A1NC C1VDD SEL GND B2+ A2+ B2- A2- B3+ VDD GND B3C2+ GND Pad A3+ C2- GND 21 VDD 22 18 21 C3+ C3- 17 A3GND 38 39 42 B1+
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HD3SS3412
SLAS828B
12Gbps
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Untitled
Abstract: No abstract text available
Text: HD3SS3415 www.ti.com SLAS840 – MARCH 2012 4-Channel High-Performance Differential Switch GND A1C1+ C1- NC GND Top View RUA Package VDD A2+ A2- SEL GND B2+ C2+ B2- C2- VDD NC A3+ A3- B3+ NC 21 18 21 GND 22 B3GND 17 22 C3+ C3- 1 B0NC VDD B1+ B1- 38 39 42 B0+
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HD3SS3415
SLAS840
12Gbps
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C101E
Abstract: HD3SS3415RUA
Text: HD3SS3415 www.ti.com SLAS840 – MARCH 2012 4-Channel High-Performance Differential Switch GND A1C1+ C1- NC GND Top View RUA Package VDD A2+ A2- SEL GND B2+ C2+ B2- C2- VDD NC A3+ A3- B3+ NC 21 18 21 GND 22 B3GND 17 22 C3+ C3- 1 B0NC VDD B1+ B1- 38 39 42 B0+
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HD3SS3415
SLAS840
12Gbps
42-Pin
C101E
HD3SS3415RUA
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Untitled
Abstract: No abstract text available
Text: HD3SS3415 www.ti.com SLAS840 – MARCH 2012 4-Channel High-Performance Differential Switch GND A1C1+ C1- NC GND Top View RUA Package VDD A2+ A2- SEL GND B2+ C2+ B2- C2- VDD NC A3+ A3- B3+ NC 21 18 21 GND 22 B3GND 17 22 C3+ C3- 1 B0NC VDD B1+ B1- 38 39 42 B0+
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HD3SS3415
SLAS840
12Gbps
42-Pin
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DS07-10205-1E
Abstract: fujitsu resonator
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-10205-1E Resonator Piezoelectric Resonator 4 to 20 MHz FAR Family (C3 series M/N type) • DESCRIPTION The features of the C3 series (M,N Type) resonators are compact and high stability. They are fabricated on a lithium tantalate (LitaO3) substrate, producing resonators with ultra compact and superior stability due to the
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DS07-10205-1E
F9801
DS07-10205-1E
fujitsu resonator
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DS07-10205-1E
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-10205-1E Resonator Piezoelectric Resonator 4 to 20 MHz FAR Family (C3 series M/N type) • DESCRIPTION The features of the C3 series (M,N Type) resonators are compact and high stability. They are fabricated on a lithium tantalate (LitaO3) substrate, producing resonators with ultra compact and superior stability due to the
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DS07-10205-1E
F9801
DS07-10205-1E
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DS07-10205-1E
Abstract: CAPACITOR MARKING
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-10205-1E Resonator Piezoelectric Resonator 4 to 20 MHz FAR Family (C3 series M/N type) • DESCRIPTION The features of the C3 series (M,N Type) resonators are compact and high stability. They are fabricated on a lithium tantalate (LitaO3) substrate, producing resonators with ultra compact and superior stability due to the
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DS07-10205-1E
DS07-10205-1E
CAPACITOR MARKING
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DS07-10205-1E
Abstract: fujitsu resonator
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-10205-1E Resonator Piezoelectric Resonator 4 to 20 MHz FAR Family (C3 series M/N type) • DESCRIPTION The features of the C3 series (M,N Type) resonators are compact and high stability. They are fabricated on a lithium tantalate (LitaO3) substrate, producing resonators with ultra compact and superior stability due to the
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DS07-10205-1E
DS07-10205-1E
fujitsu resonator
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dmc201a
Abstract: No abstract text available
Text: DMC201A0 Silicon NPN epitaxial planar type Unit: mm For low frequency amplification • Features Low collector-emitter saturation voltage VCE sat Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: C3
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DMC201A0
UL-94
DSC2501
DMC201A00R
dmc201a
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Plastic-Encapsulate Diodes SOT-23 SOT-23 1SS226 SWITCHING DIODE FEATURES z Low forward voltage z Fast reverse recovery time z Small total capacitance 1 3 2 MARKING: C3 Maximum Ratings ,Single Diode @Ta=25℃
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OT-23
1SS226
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2-20C8
Abstract: No abstract text available
Text: TYPE HA POLAR Case Code 2 Volts CO Cl C2 C3 C4 C5 C6 C7 C8 C9 3 Volts Cl C2 C3 C4 C5 C6 C7 C8 C9 4 Volts CO Cl C2 C3 C4 C5 C6 C7 C8 C9 6 Volts CO Cl C2 C3 C4 C5 C6 C7 C8 C9 10 Volts CO Cl CO Cl CO Cl CO Cl CO Cl CO Cl C2 C3 C4 C5 C6 C7 C8 C9 Subminiature, Leaded
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OCR Scan
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47-2C0
HA10-2C6
HA15-2C7
HA22-2C8
HA68-2C9
SHA15-2N4
SHA47-2N5
SHA10-4N4
SHA33-4N5Â
SHA22-6N5
2-20C8
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