Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    C3 NPN Search Results

    C3 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    SF Impression Pixel

    C3 NPN Price and Stock

    Panasonic Electronic Components PM-L25-C3

    Photoelectric Sensor Small Type Light ON/Dark ON NPN Open Collector 0.006m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com PM-L25-C3 259
    • 1 $20
    • 10 $16.28
    • 100 $15.8
    • 1000 $15.48
    • 10000 $15.48
    		Buy Now

    Panasonic Electronic Components PM-U25-C3

    U type, NPN output, Cable 3m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com PM-U25-C3 65
    • 1 $20
    • 10 $16.28
    • 100 $15.8
    • 1000 $15.48
    • 10000 $15.48
    		Buy Now

    Panasonic Electronic Components PM-L45-C3

    Photoelectric Sensor Small Type Light ON/Dark ON NPN Open Collector 0.006m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com PM-L45-C3 59
    • 1 $20
    • 10 $16.06
    • 100 $14.87
    • 1000 $14.58
    • 10000 $14.58
    		Buy Now

    Panasonic Electronic Components PM-R25-C3

    Optical Sensor - Through-Beam - 0.236" (6mm) - NPN Open Collector Output - 15mA 5 to 24V Supply - Module, Wire Leads, Slot Type - Chassis Mount.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com PM-R25-C3 48
    • 1 $20
    • 10 $16.28
    • 100 $15.8
    • 1000 $15.48
    • 10000 $15.48
    		Buy Now

    Panasonic Electronic Components PM-U24-C3

    Photoelectric Sensor Light ON/Dark ON NPN 0.005m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com PM-U24-C3
    • 1 $0
    • 10 $0
    • 100 $0
    • 1000 $0
    • 10000 $0
    		Buy Now
    Find more C3 NPN price and stock on Findchips.com

    C3 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MMPQ2222 MMPQ2222 NPN Multi-Chip General Purpose Amplifier • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. E1 B1 E2 B2 E3 B3 E4 B4 C1 C1 C2 C2 C3 C3 C4 C4 SOIC-16 Mark: MMPQ2222


    Original     		PDF MMPQ2222 500mA. SOIC-16

    transistor rf m 1104

    Abstract: motorola rf Power Transistor motorola rf 1104 Power Transistor SD135 MOTOROLA TRANSISTOR T2 100 mf capacitor Motorola 1N4007 transistor 228 npn motorola motorola rf device MRF641
    Text: MOTOROLA Order this document by MRF6414PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 PHOTOMASTER NPN Silicon RF Power Transistor CASE 333A– 02, STYLE 2 C9 +VCC T2 R1 C8 P1 C5 D1 C7 C6 D2 C4 R2 RF OUTPUT RF INPUT C3 T1 50 W C1 50 W C1, C3 C2, C7


    Original     		PDF MRF6414PHT/D MRF6414 1N4007 SD135 MRF6414 MRF6414PHT/D* transistor rf m 1104 motorola rf Power Transistor motorola rf 1104 Power Transistor SD135 MOTOROLA TRANSISTOR T2 100 mf capacitor Motorola 1N4007 transistor 228 npn motorola motorola rf device MRF641

    2N3906 NPN Fairchild

    Abstract: 2n3904 npn fairchild 2N3904 2N3906 MMPQ6700 SOIC-16
    Text: MMPQ6700 MMPQ6700 B4 E4 B3 E1 E2 B1 E3 B2 C4 C C3 4 C1 SOIC-16 C3 C2 C2 C1 Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10 µA to 100 mA. These devices are best used when space is the primary consideration.


    Original     		PDF MMPQ6700 SOIC-16 2N3904 2N3906 2N3906 NPN Fairchild 2n3904 npn fairchild 2N3904 2N3906 MMPQ6700 SOIC-16

    c328 transistor

    Abstract: BV 724 C C328 ASI10810 C3-28
    Text: C3-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The C3-28 is Designed for Class A, B and C Power Amplifier Applications Up to 500 MHz. A 45° C E E B FEATURES: B • PG = 13 dB Typ. at 3.0 W/400 MHz • Emitter Ballasting for Ruggedness


    Original     		PDF C3-28 C3-28 ASI10810 c328 transistor BV 724 C C328 ASI10810

    FFB3904

    Abstract: 1N916 FMB3904 MMPQ3904 SC70-6 SOIC-16
    Text: FMB3904 FFB3904 E2 MMPQ3904 C2 B2 E1 C1 C1 E1 C2 B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 SC70-6 SuperSOT-6 Mark: .1A Mark: .1A C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch.


    Original     		PDF FMB3904 FFB3904 MMPQ3904 SC70-6 SOIC-16 1N916 FFB3904 FMB3904 1N916 MMPQ3904 SC70-6 SOIC-16

    FFB2222A

    Abstract: FMB2222A MMPQ2222A SC70-6 SOIC-16 C150F
    Text: FMB2222A FFB2222A E2 MMPQ2222A C2 B2 E1 C1 C1 E1 C2 B1 B2 E3 E4 B4 B2 B1 pin #1 E2 B3 E2 E1 pin #1 B1 SC70-6 SuperSOT-6 Mark: .1P Mark: .1P C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector


    Original     		PDF FMB2222A FFB2222A MMPQ2222A SC70-6 SOIC-16 FFB2222A FMB2222A 200ns MMPQ2222A SC70-6 SOIC-16 C150F

    IC 7403

    Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch


    Original     		PDF MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 SOIC-16 NMT2222 IC 7403 MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A

    2N3904 SOT-23

    Abstract: mark E4 SOT-23 MMBT3904 1A 2n3904 transistor 2N3904 equivalent 2n3904 data sheet 2N3904 die FAIRCHILD SOT-223 MARK h 2n3904 switch fairchild
    Text: 2N3904 MMBT3904 C E C B TO-92 SOT-23 E B Mark: 1A MMPQ3904 E1 PZT3904 B4 E4 B3 E3 B1 E1 B1 SOIC-16 C C4 C4 C3 C3 C2 C2 C1 E C B C1 SOT-223 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to


    Original     		PDF 2N3904 MMBT3904 OT-23 MMPQ3904 PZT3904 SOIC-16 OT-223 2N3904 MMBT3904 MMPQ3904 2N3904 SOT-23 mark E4 SOT-23 MMBT3904 1A 2n3904 transistor 2N3904 equivalent 2n3904 data sheet 2N3904 die FAIRCHILD SOT-223 MARK h 2n3904 switch fairchild

    dmc201a

    Abstract: No abstract text available
    Text: DMC201A0 Silicon NPN epitaxial planar type Unit: mm For low frequency amplification • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: C3


    Original     		PDF DMC201A0 UL-94 DSC2501 DMC201A00R dmc201a

    IRFBC30AF

    Abstract: HV9906 DC DC converter 400V lighting traffic light controller 2N2222 NPN Transistor features OFF-LINE SWITCH MODE TRANSFORMERS NPN transistor 2n2222 8uF 400V advantages of 1N4007 HV9906P
    Text: Product Summary Sheet HV9906 FlexSwitch Simple Off-Line/PFC & >9V DC/DC Switcher NPN Bipolar Transistor Array or Matched 2N2222 1N4007 D1 D2 12VDC to 400VDC or 65VAC to 280VAC D4 D3 C1 0.047uF 400V D6 MURS160 L2 15uH C3 0.033uF D7 MURS160 C4 Optional Q1 +


    Original     		PDF HV9906 2N2222 1N4007 MURS160 047uF 033uF 12VDC 400VDC 65VAC IRFBC30AF HV9906 DC DC converter 400V lighting traffic light controller 2N2222 NPN Transistor features OFF-LINE SWITCH MODE TRANSFORMERS NPN transistor 2n2222 8uF 400V advantages of 1N4007 HV9906P

    40w fluorescent lamp inverter circuit

    Abstract: transistor ztx 40w inverter circuit ZTX851 FLUORESCENT LIGHTING Inverter Power MosFet DC-AC inverter ztx869 zetex 12v inverter ztx851 application 12v 40w fluorescent lamp inverter circuit
    Text: Design Note 18 Issue 2 June 1995 Emergency Lighting Fluorescent Lamp Design Note 19 Issue 2 June 1995 Remote Control Motor Driver +6 to 12V C1 8W W1 W2 W3 T1 C2 + 4V R1 C3 R2 W4 ZTX 851 ZTX 851 0V PNP=ZTX968 PNP = ZTX969 NPN=ZTX869 NPN = ZTX869 Control Logic


    Original     		PDF ZTX968 ZTX969 ZTX869 ZTX851, 150mV transforme869 DN19-1 40w fluorescent lamp inverter circuit transistor ztx 40w inverter circuit ZTX851 FLUORESCENT LIGHTING Inverter Power MosFet DC-AC inverter ztx869 zetex 12v inverter ztx851 application 12v 40w fluorescent lamp inverter circuit

    Untitled

    Abstract: No abstract text available
    Text: c3\£. , LJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3055C N-P-N SILICON POWER TRANSISTOR ELECTRICAL CHARACTERISTICS (Tcai. = 25 °C unless otherwise specified) Test conditions Parameter


    Original     		PDF 2N3055C 100mA 200mA

    ZXSC400

    Abstract: NPN SOT23-6 l1 12h 4446 ZX3CDBS1M832 ZXSC400E6 DUAL NPN SOT23-6
    Text: DN74 ZXSC400 Photoflash LED reference design Description This design note shows the ZXSC400 driving a Photoflash LED. The input voltage is 3V with a maximum pulsed output current of 1A for 2ms. A typical schematic diagram is shown in Figure 1. C3 U2 L1 SW1


    Original     		PDF ZXSC400 ZXSC400 NPN SOT23-6 l1 12h 4446 ZX3CDBS1M832 ZXSC400E6 DUAL NPN SOT23-6

    opamp 741

    Abstract: 741 op-amp 741 opamp OP 741 Ic1-741 dual 2N3904 NPN Transistor Q1 2N2222 electret mic 741 Ic1 1N914/1N4148
    Text: Sound Activated Relay Parts List: Rx = 10K C1,C2,Cbias R1 = 1K C3 R2 = 100K C4,Cx R3 = 100K Ry R4 = 25K D1,D2 R5 = 2K7 D3 Page 1 of 1 = = = = = = 0.1uF, ceramic 1uF, electrolytic 10uF, electrolytic Relay 1N914,1N4148,NTE519 1N4001 Q1 = 2N2222,2N3904, etc.


    Original     		PDF 1N914 1N4148 NTE519 1N4001 2N2222 2N3904, N4148, NTE519. opamp 741 741 op-amp 741 opamp OP 741 Ic1-741 dual 2N3904 NPN Transistor Q1 2N2222 electret mic 741 Ic1 1N914/1N4148

    Motorola 1N4007

    Abstract: motorola MRF6 mrf6 transistor 228 npn motorola
    Text: MOTOROLA Order this document by MRF6414PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 PHOTOMASTER NPN Silicon RF Pow er TVansistor C1, C2, C5, C6 C9 D1, C3 C7 C8 D2 100 pF, Chip Capacitor, Hight Q 330 pF, Chip Capacitor, 0805 10 nF, Chip Capacitor, 0805


    OCR Scan     		PDF MRF6414PHT/D MRF6414 1N4007 SD135 -------------------------------2PHX34731Q Motorola 1N4007 motorola MRF6 mrf6 transistor 228 npn motorola

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC3113 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S C3 1 1 3 Unit in mm FOR AUDIO AM PLIFIER AND SWITCHING APPLICATIONS • • • • High DC Current Gain High Breakdown Voltage High Collector Current Small Package 4.2MAX. hpE = 600~3600 VCEO = 50V


    OCR Scan     		PDF 2SC3113 150mA

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 3400 Chip position CO CM O o ¿mm 4.8 4.4 Active area C3 CD not Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Speziell geeignet für Anwendungen im


    OCR Scan     		PDF OHF02342 OHF00309

    goc 09

    Abstract: No abstract text available
    Text: 2SC3124 TOSHIBA 2 S C3 1 2 4 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, VHF OSCILLATOR APPLICATIONS + 0.5 2.5-0.3 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 2SC3124 SC-59 goc 09

    Untitled

    Abstract: No abstract text available
    Text: 2SC3112 TO SHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C3 1 1 2 Unit in mm FOR AUDIO AM PLIFIER AND SWITCHING APPLICATIONS • • • High DC Current Gain High Breakdown Voltage High Collector Current 5.1 M AX. hpE = 600~3600 VCEO = 50V


    OCR Scan     		PDF 2SC3112 150mA

    smd transistor bcv62

    Abstract: SMD Transistor Y14 TRANSISTOR HK SMD Transistor t 2 smd motorola 8B TRANSISTOR SMD RTW 317 SMD smd transistor 8B
    Text: * w rtw fc # » Order this document by MRF6401PHT/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor C1 C2 C3 C4, C6, C7, C9 C5 C8 C10 C11 1.5 pF, ATC Chip Capacitor 100A 3.9 pF, ATC Chip Capacitor 100A 56 pF. ATC Chip Capacitor 100A


    OCR Scan     		PDF MRF6401PHT/D MRF6401 BCV62 1600-200otorola, smd transistor bcv62 SMD Transistor Y14 TRANSISTOR HK SMD Transistor t 2 smd motorola 8B TRANSISTOR SMD RTW 317 SMD smd transistor 8B

    tt 3034

    Abstract: 117h lt 124d marking 5c8 SAE 700 hitachi hu5 IC tt 3034 2SC4229 D300 marking uma
    Text: HITACHI 2SC4229 SILICON NPN EPITAXIAL UHF RF AMPLIFIER CMO'om o+:»i i ir o-o.-. . C3 3 Kmtîîrf Ì Ha«í y c*!i« mi Dinwtlcr.s ni mm 7/ ÍP (MPAK) MAXIMUM COLLECTOR DISSIPATION • ABSOLUTE MAXIMUM RATINGS (Ta=25eC) Symbol Item Collcclor 10 base voltage


    OCR Scan     		PDF 2SC4229 2SC4229 tt 3034 117h lt 124d marking 5c8 SAE 700 hitachi hu5 IC tt 3034 D300 marking uma

    SS502

    Abstract: M502 Q60218-Y34 Q60218-Y58 BSY34 Scans-0010549
    Text: NPIM-HF-Transistoren für Schalteranw endungen B S Y 34 B SY 58 B S Y 34 und B S Y 58 sind doppeltdiffundierte epitaktische NPN-Silizium-HF-Transistoren in Planartechnik im Gehäuse 5 C3 DIN 41 873 T O -39 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden.


    OCR Scan     		PDF Q60218-Y34 Q60218-Y58 100mA 100mA /c-150mA, SS502 M502 Q60218-Y34 Q60218-Y58 BSY34 Scans-0010549

    Transistor BSX 63-10

    Abstract: Transistor BSX 62-16 transistor 7g Q60218-X62-B Q60218-X62-D Q60218-X63-B Q60218-X63-C bsx 30 dem 6216 BSX 39
    Text: IMPN -T ransisto ren fü r I\IF-Endstufen und S ch alteran w en d u n g BSX 62 BSX 63 BSX 62 und BSX 63 sind epitaktische NPN-Siiizium-Planar-Transistoren im Gehäuse 5 C3 DIN 41 873 TO-39 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Die Transistoren


    OCR Scan     		PDF Q60218-X62-B Q62018-X62â Q60218-X62-D Q60218-X63-B Q60218-X63-C Transistor BSX 63-10 Transistor BSX 62-16 transistor 7g Q60218-X62-B Q60218-X62-D Q60218-X63-B Q60218-X63-C bsx 30 dem 6216 BSX 39

    Untitled

    Abstract: No abstract text available
    Text: FASCO INDS/ SENISYS 40E I> C3 34=1=1736 0001272 1 ^ S E N I EEEESai i'T-Mi-s l CLT555_ Silicon Planar Phototransistor Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • Storage + 100°C


    OCR Scan     		PDF CLT555_ 935nm.