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    Diodes Incorporated BZT52C30-7-F

    DIODE ZENER 30V 500MW SOD123
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    DigiKey BZT52C30-7-F Cut Tape 120,568 1
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    BZT52C30-7-F 9,196
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    BZT52C30-7-F 2,905 45
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    TME BZT52C30-7-F 3,386 1
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    Avnet Asia BZT52C30-7-F 8 Weeks 18,000
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    New Advantage Corporation BZT52C30-7-F 105,000 1
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    Rochester Electronics LLC 2SC3071-AE

    TRANS NPN 100V 0.2A 3-MP
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    DigiKey 2SC3071-AE Bulk 49,000 1,902
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    Rochester Electronics LLC BC307C

    TRANS PNP 45V 0.1A TO92
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    DigiKey BC307C Bulk 34,200 11,539
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    Diodes Incorporated AZ23C30-7-F

    DIODE ZENER ARRAY 30V SOT-23-3
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    DigiKey AZ23C30-7-F Digi-Reel 2,900 1
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    Newark AZ23C30-7-F Cut Tape 2,435 5
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    TME AZ23C30-7-F 1
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    Avnet Silica AZ23C30-7-F 18,000 10 Weeks 3,000
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    onsemi MOC3073M

    OPTOISO 4.17KV TRIAC 1CH 6-PDIP
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    DigiKey MOC3073M Tube 813 1
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    TME MOC3073M 439 1
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    Avnet Silica MOC3073M 9 Weeks 1,000
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    Flip Electronics MOC3073M 8,249
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    C307 Datasheets (31)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    C30703 PerkinElmer Optoelectronics si Apd Radiation Detection Original PDF
    C30703FH Excelitas Technologies SI APD, 10X10MM, FLATPACK Original PDF
    C30723G PerkinElmer Optoelectronics Ingaas Pin Large-area 900 NM to 1700 NM Original PDF
    C30723GH Excelitas Technologies INGAAS PIN, 5MM, TO-8 PACKAGE Original PDF
    C30724P EG&G LOW COST SILICON AVALANCHE PHOTODIODE (Plastic Encapsulated Package) Scan PDF
    C30724PH Excelitas Technologies Sensors, Transducers - Optical Sensors - Photodiodes - PHOTODIODE APD TO-18 PLASTIC Original PDF
    C30733ECER PerkinElmer Optoelectronics Ingaas Apds 900 NM to 1700 NM Original PDF
    C30734ECER PerkinElmer Optoelectronics Photodiode, PIN Module, 0.9A/W Sensitivity, 1nA Original PDF
    C30734ECER PerkinElmer Optoelectronics High-Speed InGaAs PIN Original PDF
    C30737 PerkinElmer Optoelectronics Epitaxial Silicon Avalanche Photodiode Original PDF
    C30737E-230 PerkinElmer Optoelectronics Epitaxial Silicon Avalanche Photodiode Original PDF
    C30737E-500 PerkinElmer Optoelectronics Epitaxial Silicon Avalanche Photodiode Original PDF
    C30737LH-230-80A Excelitas Technologies Sensors, Transducers - Optical Sensors - Photodiodes - PHOTODIODE APD 230U SMT LCC Original PDF
    C30737LH-230-83A Excelitas Technologies Sensors, Transducers - Optical Sensors - Photodiodes - PHOTODIODE APD 230U SMT LCC Original PDF
    C30737LH-230-90C Excelitas Technologies SI APD 230UM CERAMIC 900NM SMD Original PDF
    C30737LH-500-80A Excelitas Technologies Sensors, Transducers - Optical Sensors - Photodiodes - PHOTODIODE APD 500U SMT LCC Original PDF
    C30737LH-500-90C Excelitas Technologies SI APD 500UM CERAMIC 900NM SMD Original PDF
    C30737LH-500-92C Excelitas Technologies SENSOR PHOTODIODE 905NM 6CLCC Original PDF
    C30737LH-500-92CTR Excelitas Technologies Sensors, Transducers - Optical Sensors - Photodiodes - PHOTODIODE APD 500U SMT LCC Original PDF
    C30737MH-230-80A Excelitas Technologies 230UM SI APD IN FR4 SMD 800NM Original PDF

    C307 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Untitled

    Abstract: No abstract text available
    Text: CCDカメラ C3077-70,C5403-30,C5405-50 ※レンズはオプションです。 C3077-70C5403-30、C5405-50は、小型･軽量 特 長 のB/Wビデオカメラです。画像処理、画像計測用カメラと して高品位な画像を提供します。各種のモード設定がリア


    Original     		C3077-70 C5403-30 C5405-50 C3077-70ã C5403-30ã C5405-50ã C3077-70) C5403-30 C3077-70 PDF

    BTA1579S3

    Abstract: BTC4102S3
    Text: Spec. No. : C307S3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1579S3 Description • The BTP1579S3 is designed for high voltage amplification application. • High BVCEO, BVCEO= -120V


    Original     		C307S3 BTA1579S3 BTP1579S3 -120V BTC4102S3. OT-323 UL94V-0 BTA1579S3 BTC4102S3 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection C30737LH-300 Series Low Capacitance Silicon Avalanche Photodiode in Leadless Ceramic Carrier SMT Package for High Volume Laser Meter and Range Finding Applications Key Features •      Low capacitance, <1pF, for high


    Original     		C30737LH-300 C30737LH-Rev PDF

    c3072

    Abstract: line filter 6.8mH C307-2
    Text: C3072 REV A Product Description 6.8mH Ringing Filter Inductor Customer Terminal #1 Indicator EIA date code and lot code A COEV C3072 XXXXX [9.91 MAX] 0.390 MAX Coplanar with surface A +0.006"/-0.000" 0.40 .016REF 1 8 2 7 3 6 4 5 [11.05 MAX] 0.435 MAX [9.14 MAX]


    Original     		C3072 C3072 016REF 10kHz, 100mVAC, 100mADC, 100kHz, line filter 6.8mH C307-2 PDF

    PerkinElmer Avalanche Photodiode

    Abstract: No abstract text available
    Text: Features and Benefits Introduction The short wavelength enhanced silicon avalanche photodiode APD by PerkinElmer (Model C30739ECERH) is designed for low light level applications covering the spectral range from less than 400 nm to greater than 700 nm. Benefits


    Original     		C30739ECERH) DTS0108P PerkinElmer Avalanche Photodiode PDF

    Untitled

    Abstract: No abstract text available
    Text: CCD Video Camera C3077-70/-71 C5403-30/-31 C5405-50/-51 DATA SHEET ▲ Shown with optional lens. The C3077-70/-71,C5403-30/-31,C5405-50/-51 incorporates a next generation CCD into a new compact B/W camera. Features of this model include high resolution, sensitivity, and S/N ratio. An electronic shutter


    Original     		C3077-70/-71 C5403-30/-31 C5405-50/-51 C3077-70/-71 C5403-30/-31 C3077-70 PDF

    A3472-04

    Abstract: C2741-60 Hamamatsu C3077-70 C3077-71 C2741 hamamatsu C2741 hamamatsu tv
    Text: 2/3-inch CCD Video Camera C3077-70/-71 DATA SHEET ▲ Shown with optional lens. The C3077-70/-71 incorporates a next generation 2/3-inch CCD into a new compact B/W camera. Features of this model include high resolution, sensitivity, and S/N ratio. An electronic shutter


    Original     		C3077-70/-71 C3077-70/-71 C3077-70 C3077-71 900Parc SE-171-41 SICS1070E02 SEP/2001 A3472-04 C2741-60 Hamamatsu C3077-70 C3077-71 C2741 hamamatsu C2741 hamamatsu tv PDF

    PerkinElmer Optoelectronics

    Abstract: C30734ECER Optoelectronics photodetector 290601 j7v8p7 perkinelmer
    Text: Imaging Advanced Prototype Telecom InGaAs PIN Photodiodes C30734ECER InGaAs PIN Photodiodes Description The C30734ECER is a high-speed InGaAs PIN photodetector. The chipon-carrier photodetector features low capacitance and exceptionally high bandwidth for ease of integration into


    Original     		C30734ECER C30734ECER OC-192 TANWT-00983. PerkinElmer Optoelectronics Optoelectronics photodetector 290601 j7v8p7 perkinelmer PDF

    PerkinElmer Optoelectronics

    Abstract: C30734ECER GR-468-CORE high-speed optoelectronics 1260nm
    Text: Imaging Telecom Detectors - Mounted on ceramic High-Speed InGaAs PIN C30734ECER Detectors - Mounted on ceramic Description The C30734ECER is a high-speed InGaAs PIN photodetector. The chipon-carrier photodetector features low capacitance and exceptionally high


    Original     		C30734ECER C30734ECER OC-192 C30734 GR-468-CORE. PerkinElmer Optoelectronics GR-468-CORE high-speed optoelectronics 1260nm PDF

    Untitled

    Abstract: No abstract text available
    Text: Overview Features and Benefits PerkinElmer’s C30741 series of N-type silicon p-i-n photodiodes provide fast response and high quantum efficiency in the spectral range of 400 to 1100 nm. The wavelength of maximum sensitivity is @ 800 nm. As different applications have different


    Original     		C30741 DTS0408P PDF

    BTN5551N3

    Abstract: BTP5401N3
    Text: Spec. No. : C307N3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401N3 Description • The BTP5401N3 is designed for general purpose amplification. • Large IC , IC Max = -0.6A


    Original     		C307N3 BTP5401N3 BTP5401N3 -150V BTN5551N3. OT-23 UL94V-0 BTN5551N3 PDF

    BTC3906N3

    Abstract: BTA1514N3
    Text: CYStech Electronics Corp. Spec. No. : C307N3 Issued Date : 2002.06.11 Revised Date : 2002.12.04 Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1514N3 Description • The BTA1514N3 is designed for general purpose applications requiring high breakdown


    Original     		C307N3 BTA1514N3 BTA1514N3 BTC3906N3 OT-23 UL94V-0 BTC3906N3 PDF

    Untitled

    Abstract: No abstract text available
    Text: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Right: TO-C30737PH Series T-1¾ TO-like hrough-Hole Package (4.9 mm Diameter) Let: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coeficient APD


    Original     		O-C30737PH C30737LH C30737 C30724 Standard-90 C30737PH-500-90 C30737LH-500-90 C30737LH-500-92 PDF

    PerkinElmer Avalanche Photodiode

    Abstract: C30902 C30737EH C30902S PerkinElmer Optoelectronics C30902E avalanche photodiode bias and high voltage C30737E-500 photodiode Avalanche photodiode C30737
    Text: Description The C30737 type avalanche photodiode provides high responsivity between 500nm and 1000nm, as well as extremely fast rise times at all wavelengths with a frequency response up to 1.0 GHz. The active area diameter of the photosensitive surface is 0.5mm.


    Original     		C30737 500nm 1000nm, MIL-STD-883 MIL-STD-750. DTS0206 C30737EH PerkinElmer Avalanche Photodiode C30902 C30737EH C30902S PerkinElmer Optoelectronics C30902E avalanche photodiode bias and high voltage C30737E-500 photodiode Avalanche photodiode PDF

    133/ATMEL 230 24C04

    Abstract: No abstract text available
    Text: A R253 10K C308 10uF/6.3V 10K 5 DD30 BAV99 R259 +3.3VD R335 10K +3.3VD HD-VSW0 1 B COVER1 1 2 3 4 5 COVER1 47n 47n 47R C57 47R C58 3906 Q41 1 7 RGB0_RIN- RGB0_GIN- R252 47K C331 R249 C307 1n 100R Jupiter-RST 10uF/6.3V RESET ON_PANEL HOTPLUG 47n R126 R124 RGB0_BIN-


    Original     		10uF/6 BAV99 100p100p C314C315 133/ATMEL 230 24C04 PDF

    C30737LH-500-92

    Abstract: CERAMIC LEADLESS CHIP CARRIER
    Text: DATASHEET Photon Detection C30737PH and C30737LH Series Silicon Avalanche Photodiodes APDs for range finding and laser meters – plastic and leadless ceramic carrier packages Excelitas’ C30737 Series APDs are ideally suited to laser meter, laser range finding and area scanning applications,


    Original     		C30737PH C30737LH C30737 C30737PH-LH-Rev C30737LH-500-92 CERAMIC LEADLESS CHIP CARRIER PDF

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection C30739ECERH Series Short Wavelength Enhanced Silicon Avalanche Photodiode Key Features The C30739ECERH large area silicon avalanche photodiode APD is intended for use in a wide variety of broadband low light level applications covering the spectral range from below 400 to over 700 nm.


    Original     		C30739ECERH PDF

    c3072

    Abstract: KTC3072D
    Text: SEMICONDUCTOR C3072D MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K C3072 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name C3072 C3072D 3 hFE Grade Y O,Y,GR 4 Lot No. 016 00.12.27 Revision No :


    Original     		KTC3072D C3072 c3072 KTC3072D PDF

    TRANSISTOR n5401 b

    Abstract: n5401 n5401 transistor C307A3 BTN5551A3 BTP5401A3 TRANSISTOR n5401 3n5401
    Text: Spec. No. : C307A3 Issued Date : 2003.06.27 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTP5401A3 Description • The BTP5401A3 is designed for general purpose amplification. • Large IC , IC Max = -0.6A


    Original     		C307A3 BTP5401A3 BTP5401A3 -150V BTN5551A3. UL94V-0 TRANSISTOR n5401 b n5401 n5401 transistor C307A3 BTN5551A3 TRANSISTOR n5401 3n5401 PDF

    smd t1A

    Abstract: t1A 13
    Text: Photodiodes for High-Performance Applications Avalanche Right: TO-C30737PH Series T-1¾ TO-like Through-Hole Package (4.9 mm Diameter) P hotodiodes for Range Left: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) F inding Applications C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coefficient APD


    Original     		O-C30737PH C30737LH C30737 C30724 C3072490 C30737PH-500-90 C30737LH-500-90 C30737LH-500-92 C30724EH smd t1A t1A 13 PDF

    Untitled

    Abstract: No abstract text available
    Text: CCD camera C3077-70/-71,C5403-30/-31,C5405-50/-51 ▲ Lens is optional. The C3077-70/-71,C5403-30/-31,C5405-50/-51 incorporates a CCD into a compact B/W camera. Features of this model include high resolution, sensitivity, and S/N ratio. An electronic shutter function enables monitoring of moving objects.


    Original     		C3077-70/-71 C5403-30/-31 C5405-50/-51 C5405-50/-51 C3077-70) 1/100s 1/10000s C5403-30/-31 PDF

    Untitled

    Abstract: No abstract text available
    Text: Near Infrared CCD Camera C3077-79 Near Infrared 2/3 inch CCD Video Camera ▲ Shown with optional lens. The C3077-79 is employing a 2/3 inch CCD, featuring high sensitivity in the near infrared region, especially in the wavelength from 800 nm to 1100 nm. The C3077-79 also utilizes a frame transfer type CCD device.


    Original     		C3077-79 C3077-79 SE-171-41 SCAS0004E03 JUL/2008 PDF

    EG*G Optoelectronics

    Abstract: C30724 C30724P EG&G VS289 MIL-Q-9858A Si apd photodiode 800 nm EG&G optoelectronics apd bias 200v eg&g HUV-1100
    Text: J^E G S G CANADA AN OPTOELECTRONICS GROUP COMPANY SÌ APD Package 04-22-97) C30724P Features: 3.25/3.17 ( 0 . 1 2 8 ) / ( 0 .125) 3_ 1 .0 2 (0.040) CATHODE cxzzr 3 t = I J . 2.54 ( 0 . 100 ) ANODE 0 .4 6 -c


    OCR Scan     		C30724P 900nm C30724P EG*G Optoelectronics C30724 EG&G VS289 MIL-Q-9858A Si apd photodiode 800 nm EG&G optoelectronics apd bias 200v eg&g HUV-1100 PDF

    marking 2L PNP SOT-89

    Abstract: BTC3906M3 BTA1514M3
    Text: Spec. No. : C307M3 Issued Date : 2007.01.10 Revised Date : Page No. : 1/5 CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTA1514M3 Description • The BTA1514M3 is designed for general purpose application requiring high breakdown voltage.


    Original     		C307M3 BTA1514M3 BTA1514M3 -150V BTC3906M3. OT-89 UL94V-0 marking 2L PNP SOT-89 BTC3906M3 PDF