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Catalog Datasheet	MFG & Type	PDF	Document Tags
BTA1759M3 Abstract: BTC4505M3 Text: CYStech Electronics Corp. Spec. No. : C309M3 Issued Date : 2003.06.30 Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1759M3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.	Original	PDF	C309M3 BTA1759M3 -400V) -10mA/-1mA. BTC4505M3. OT-89 UL94V-0 BTA1759M3 BTC4505M3

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BTA1759M3

Abstract: BTC4505M3
Text: CYStech Electronics Corp. Spec. No. : C309M3 Issued Date : 2003.06.30 Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1759M3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.

Original

PDF

C309M3 BTA1759M3 -400V) -10mA/-1mA. BTC4505M3. OT-89 UL94V-0 BTA1759M3 BTC4505M3