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    C337 40 W 51 Search Results

    C337 40 W 51 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    C337 Coilcraft Inc Designer's Kit, 1812CS chip inductors, RoHS Visit Coilcraft Inc Buy
    iW3620-00 Renesas Electronics Corporation Digital Offline 40W PWM Controller with PrimAccurate™ Primary-Side Control for LED Driving Visit Renesas Electronics Corporation
    iW388-30 Renesas Electronics Corporation 40W Integrated MOSFET Second-Stage 65V Buck LED Driver with Dialog’s Flicker-Free True DC Dimming Technology for Commercial Lighting Visit Renesas Electronics Corporation
    iW388-01 Renesas Electronics Corporation 40W Integrated MOSFET Second-Stage 65V Buck LED Driver with Dialog’s Flicker-Free True DC Dimming Technology for Commercial Lighting Visit Renesas Electronics Corporation
    iW388-00B Renesas Electronics Corporation 40W Integrated MOSFET Second-Stage 65V Buck LED Driver with Dialog’s Flicker-Free True DC Dimming Technology for Commercial Lighting Visit Renesas Electronics Corporation

    C337 40 W 51 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C337 W

    Abstract: PC337 C337 C337 W 65 C337 25 C337 W 60 c337 nec PC337HF WS60-00-1 MP-45G
    Text: データ・シート バイポーラ・アナログ集積回路 Bipolar Analog Integrated Circuit PC337 3 端子可変負出力電圧安定化電源回路 μPC337 は,出力電圧可変形の 3 端子負出力電圧安定化電源回路です。 2 個の外付け抵抗により,−1.3 V から−30 V までの範囲で出力電圧を自由に


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    PDF PC337 PC337HF, PC337HF-AZ PC337HF MP-45G) O-220 C337 W PC337 C337 C337 W 65 C337 25 C337 W 60 c337 nec PC337HF WS60-00-1 MP-45G

    c337 transistor

    Abstract: c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340
    Text: PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


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    PDF IRGBC20M-S 10kHz) SMD-220 C-340 c337 transistor c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340

    c337 transistor

    Abstract: C337 w 79 transistor c337 C336 SMD c338 transistor c336 transistors C337 W 80 transistor C337 W transistor SMD LOA transistor c338
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


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    PDF IRGBC20M-S 10kHz) SMD-220 C-340 c337 transistor C337 w 79 transistor c337 C336 SMD c338 transistor c336 transistors C337 W 80 transistor C337 W transistor SMD LOA transistor c338

    d331 npn transistor

    Abstract: pin configuration NPN transistor c458 transistor C458 D331 transistor D330 NPN transistor d331 npn transistor pin configuration smd diode D450 c458 NPN transistor smd diode D451 transistor D450
    Text: Application Report SLEA055 - JUNE 2006 TAS5508-5142K7EVM Application Report Jonas Svendsen, Tomas Bruunshuus Digital Audio & Video Products The TAS5508-5142K7EVM PurePath Digital customer evaluation module demonstrates the integrated circuits, TAS5508BPAG and TAS5142DKD, from Texas Instruments TI .


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    PDF SLEA055 TAS5508-5142K7EVM TAS5508BPAG TAS5142DKD, 32-bit 24-bit 48-bit TIC-HSINK-015 d331 npn transistor pin configuration NPN transistor c458 transistor C458 D331 transistor D330 NPN transistor d331 npn transistor pin configuration smd diode D450 c458 NPN transistor smd diode D451 transistor D450

    C337 W

    Abstract: c337 nec PC337 C337 W 65 Pc337 nec C337 MP-45G PC337HF Q16Q17 C337 40
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF PC337 PC337HF, PC337HF-AZ PC337HF MP-45G) O-220254B-4 G13783JJ3V0DS PC337HF3 C337 W c337 nec PC337 C337 W 65 Pc337 nec C337 MP-45G PC337HF Q16Q17 C337 40

    transistor C458

    Abstract: d331 npn transistor pin configuration d331 npn transistor pin configuration NPN transistor c458 C458 datasheet c337 pnp transistor D331 PNP c458 NPN transistor smd diode D451 capacitor 100nf 50v 0805 datasheet
    Text: Application Report SLEA061 – JUNE 2006 TAS5518-5152K8EVM Application Report Tomas Bruunshuus, Kim N. Madsen . Digital Audio and Video Products ABSTRACT The TAS5518-5152K8EVM PurePath Digital customer evaluation module


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    PDF SLEA061 TAS5518-5152K8EVM TAS5518PAG TAS5152DKD, 32-bit 24-bit 48-bit transistor C458 d331 npn transistor pin configuration d331 npn transistor pin configuration NPN transistor c458 C458 datasheet c337 pnp transistor D331 PNP c458 NPN transistor smd diode D451 capacitor 100nf 50v 0805 datasheet

    DIODE SMD c336

    Abstract: xcf025 xcf02sv020 b30 c300 DIODE cd c326 MOLEX 87832-1420 SMD fuse P200 xcf02sv020c smdc110f XCF025V
    Text: High Speed Deserialization Board HSDB HSC-ADC-FPGA FUNCTIONAL BLOCK DIAGRAM MULTI-CHANNEL ADC EVALUATION BOARD POWER SUPPLY SERIAL LVDS PER ADC FILTERED ANALOG INPUT CLOCK CIRCUIT HSC-ADC-FPGA HSC-ADC-EVALA/B-DC +3V XILINX FPGA XC2V250 FIFO1 32k SPI CLOCK INPUT


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    PDF XC2V250 120-PIN XC2V250-5FG256C AD9287, AD9219, AD9228, AD9229, AD9259 EB05053-0-11/05 DIODE SMD c336 xcf025 xcf02sv020 b30 c300 DIODE cd c326 MOLEX 87832-1420 SMD fuse P200 xcf02sv020c smdc110f XCF025V

    XCF02SV020C

    Abstract: Xilinx xcf02sv020c manual SMHU diode c329 JP105 xcf02sv020 C337 W 63 c338 pin details SMHU transistor c331
    Text: High Speed Deserialization Board HSDB HSC-ADC-FPGA FEATURES FUNCTIONAL BLOCK DIAGRAM STANDARD USB 2.0 SERIAL LVDS HIGH SPEED ADC EVALUATION BOARD PS HSC-ADC-FPGA PS REG n FILTERED ANALOG INPUT Any high speed ADC evaluation board that supports serial LVDS digital output format


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    PDF XC2V250 133MHz 120-PIN 05053-0RL XC2V250-5FG256C XCF02SV020C CBSB-14-01A-RT SNT-100-BK-G-H HSC-ADC-FPGA-9289 XCF02SV020C Xilinx xcf02sv020c manual SMHU diode c329 JP105 xcf02sv020 C337 W 63 c338 pin details SMHU transistor c331

    PSMN4R0-30YL

    Abstract: No abstract text available
    Text: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PSMN4R0-30YL PSMN4R0-30YL

    PSMN7R0-30YL

    Abstract: 10S100
    Text: PSMN7R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PSMN7R0-30YL PSMN7R0-30YL 10S100

    SCD1U50V3KX-GP

    Abstract: SC10U25V6KX-1GP G547F2 SC1U50V5ZY-1-GP SRN33J-7-GP SC10U6D3V3MX-GP SIS412DN-T1-GE3-GP 200KR2F-L-GP SC1U25V3KX-1-GP 10KR2F-2-GP
    Text: 5 4 3 2 1 D D SW 1 10 1 EJECT_BTN 3 5 2 4 SW -TACT-119-GP 62.40009.671 62.40012.101 C C B B A A mini BD Wistron Corporation 21F, 88, Sec.1, Hsin Tai W u Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C. Title ODD EJT BTN Size Document Number Rev -2 JM41_MINI_BD


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    PDF -TACT-119-GP SKT-USB-295-GP G547F2P81U-GP SC4D7U16V5ZY-GP SCD1U50V3KX-GP 00PAD STFT236BR48H172-GP SCD1U50V3KX-GP SC10U25V6KX-1GP G547F2 SC1U50V5ZY-1-GP SRN33J-7-GP SC10U6D3V3MX-GP SIS412DN-T1-GE3-GP 200KR2F-L-GP SC1U25V3KX-1-GP 10KR2F-2-GP

    PSMN7R0-30YL

    Abstract: C337 40 w 22
    Text: PSMN7R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 4 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PSMN7R0-30YL PSMN7R0-30YL C337 40 w 22

    PSMN4R0-30YL

    Abstract: No abstract text available
    Text: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 31 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PSMN4R0-30YL PSMN4R0-30YL

    PSMN7R0-30YL

    Abstract: PSMN7R0-30
    Text: LF PA K PSMN7R0-30YL N-channel 30 V 7 mΩ logic level MOSFET in LFPAK Rev. 04 — 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PSMN7R0-30YL PSMN7R0-30YL PSMN7R0-30

    76M12

    Abstract: u19 c629 c639 M21125 microwave inverter panasonic c86 sot23-8 smd m21 sot23 panasonic inverter microwave diode C646 PANASONIC C372
    Text: M21125/M21115 Evaluation Module User Guide 21125-EVMD-001-A February 2009 Revision History Revision Date A February 2009 21125-EVMD-001-A Description Initial release Mindspeed Technologies Mindspeed Proprietary and Confidential 2 Contents 1.0 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


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    PDF M21125/M21115 21125-EVMD-001-A 76M12 u19 c629 c639 M21125 microwave inverter panasonic c86 sot23-8 smd m21 sot23 panasonic inverter microwave diode C646 PANASONIC C372

    transistor r1009

    Abstract: ctv350s ZD405 OPT601 r63302 ic902 TH901 q702 transistor w17 transistor philips carbon film resistor
    Text: SERVICE MANUAL 80 cm CTV Effective: MAY 2000 CTM805SVSERV PART NUMBER 107-800455-4G 113-101005-17 113-102005-17 113-103005-17 113-109005-17 113-473005-17 113-682005-17 127-476042-0D 130-600101-0G 131-210719-19 131-230945-00 133-803010-33 172-726000-99 190-R63300-02


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    PDF CTM805SVSERV 107-800455-4G 127-476042-0D 130-600101-0G 190-R63300-02 774-R63301-00 774-R63302-00 774-R63303-00 849-R63301-00 892-R63301-06 transistor r1009 ctv350s ZD405 OPT601 r63302 ic902 TH901 q702 transistor w17 transistor philips carbon film resistor

    tss400cfn-s3

    Abstract: TSS400-S1 TSS400 TSS400QFN-S3 msp430 DC motor control tss400-s3 real time clock in MSP430 MSP-PRG430A MSP430 QFP100 SLAUE13
    Text: Low-Power Microcontroller Quick Reference Guide Texas Instruments MSP430 devices are not available in all locations. Please contact your local TI Sales Office or Distributor for availability and pricing.


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    PDF MSP430 TSS400 MSP430x310 MSP430x320 MSP430x330 tss400cfn-s3 TSS400-S1 TSS400 TSS400QFN-S3 msp430 DC motor control tss400-s3 real time clock in MSP430 MSP-PRG430A MSP430 QFP100 SLAUE13

    MDB41

    Abstract: MDB48 MDB37 M56-P MDA48 MDB35 MDB29 MDB30 MDB51 diode u1d ON
    Text: 5 4 3 1 U1A TP6 35mil PART 1 OF 7 DNI 35mil TP1 DNI D 2 TP2 35mil PCIE_RXP0 PCIE_RXN0 AJ31 AH31 PCIE_RXP1 PCIE_RXN1 AH30 AG30 PCIE_RXP2 PCIE_RXN2 AG32 AF32 PCIE_RXP3 PCIE_RXN3 AF31 AE31 PCIE_RXP4 PCIE_RXN4 AE30 AD30 PCIE_RXP5 PCIE_RXN5 AD32 AC32 PCIE_RXP6


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    PDF 35mil 35mil RX10P RX10N RX11P RX11N RX12P RX12N RX13P RX13N MDB41 MDB48 MDB37 M56-P MDA48 MDB35 MDB29 MDB30 MDB51 diode u1d ON

    burndy Y39

    Abstract: YAV4C-TC14-FXB
    Text: f_ I SE208075 I_ I ACCOMMODATES 5_ I_ 5_ I_ “* DIMENSIONS STUD SIZE CATALOG NUMBER 1/2 YA30-TC12-FXB 2.76 1.20 ±.04 .56 4.04 .62 2.70 £55J £30] m [14] [103] [16] [69J — 263 KcmiL C650/24 — - 7/2 250 FLEX CLASS I,K,M


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    PDF SE208075 SE206075-01 5E208075 burndy Y39 YAV4C-TC14-FXB

    C 337-25

    Abstract: C 33725 c337 pnp transistor C 337-40 c 33740 transistor NPN c337 BC337 sot54 c337 transistor transistor c337 C337 W 63
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor BC337 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V).


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    PDF BC337 BC327. 115002/00/03/pp8 C 337-25 C 33725 c337 pnp transistor C 337-40 c 33740 transistor NPN c337 BC337 sot54 c337 transistor transistor c337 C337 W 63

    EL 817 c337

    Abstract: transistor c337 c337 transistor C337 W 61 DS4005
    Text: DISCRETE SEMICONDUCTORS SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification


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    PDF BUK107-50DS SC13a BUK107-50 SCA54 137087/1200/02/pp12 EL 817 c337 transistor c337 c337 transistor C337 W 61 DS4005

    Untitled

    Abstract: No abstract text available
    Text: EPSON _ E0C63256 4-bit Single Chip Microcomputer \ • 4-bit E0C63000 Core CPU 1 • A /D C o n v e rte r • Built-in L C D D river • H igh S p e e d Instruction C y c le 2 -6 C P I I D E S C R IP T IO N The E0C63256 is a microcomputer composed of a CMOS 4-bit core CPU (E0C63000), ROM, RAM, LCD driver


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    PDF E0C63256 E0C63000 E0C63256 E0C63000) C-337 33b4134 0QG32fe

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC524162 TC524165 t a r g e t s il ic o n g a t e c m o s 262,144 WORDS x 16 BITS MULTIPORT DRAM DESCRIPTION The TC524162/I65 is a 4M bit CM OS multiport m em ory equipped with a 262,144-words by 16-bits dynam ic random access memory RAM port and a 512-words by 16-bits static serial access m em ory (SAM)


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    PDF TC524162 TC524165 TC524162/I65 144-words 16-bits 512-words TC524162/165 C-352

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC524162 TC524165 t a r g e t s il ic o n g a t e c m o s 262,144 WORDS x 16 BITS MULTIPORT DRAM DESCRIPTION The TC524162/165 is a 4M bit CM OS m ultiport m em ory equipped with a 262,144-words by 16-bits dynam ic random access m emory RAM port and a 512-words by 16-bits static serial access m emory (SAM)


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    PDF TC524162 TC524165 TC524162/165 144-words 16-bits 512-words 16-bits