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    C337 NEC Search Results

    C337 NEC Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    C337 Coilcraft Inc Designer's Kit, 1812CS chip inductors, RoHS Visit Coilcraft Inc Buy
    UPC337HF-1-AZ Renesas Electronics Corporation 3 Terminal Regulators Visit Renesas Electronics Corporation
    UPC337HF-AZ Renesas Electronics Corporation 3 Terminal Regulators, , / Visit Renesas Electronics Corporation

    C337 NEC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    NEC 2405

    Abstract: c337 transistor MARKING G 3pin C337 MP-45G PC337
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    c337 nec

    Abstract: nec 2405 pc337 NEC R18 C337 W C337 c337 transistor Usage of Three-Terminal Regulators NEC F75-100 C337 25
    Text: DATA SHEET SHEET DATA BIPOLAR ANALOG INTEGRATED CIRCUIT PC337 3-TERMINAL NEGATIVE ADJUSTABLE REGULATOR PIN CONFIGURATION Marking Side DESCRIPTION μPC337HF, μPC337HF-AZ The μPC337 is an adjustable 3-terminal negative voltage regulator, which has 1.5 A for the output current. The output voltage


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    PDF PC337 PC337HF, PC337HF-AZ PC337 MP-45G) O-220ems, c337 nec nec 2405 NEC R18 C337 W C337 c337 transistor Usage of Three-Terminal Regulators NEC F75-100 C337 25

    C337 W

    Abstract: c337 nec PC337 C337 W 65 Pc337 nec C337 MP-45G PC337HF Q16Q17 C337 40
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF PC337 PC337HF, PC337HF-AZ PC337HF MP-45G) O-220254B-4 G13783JJ3V0DS PC337HF3 C337 W c337 nec PC337 C337 W 65 Pc337 nec C337 MP-45G PC337HF Q16Q17 C337 40

    C337 W

    Abstract: PC337 C337 C337 W 65 C337 25 C337 W 60 c337 nec PC337HF WS60-00-1 MP-45G
    Text: データ・シート バイポーラ・アナログ集積回路 Bipolar Analog Integrated Circuit PC337 3 端子可変負出力電圧安定化電源回路 μPC337 は,出力電圧可変形の 3 端子負出力電圧安定化電源回路です。 2 個の外付け抵抗により,−1.3 V から−30 V までの範囲で出力電圧を自由に


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    PDF PC337 PC337HF, PC337HF-AZ PC337HF MP-45G) O-220 C337 W PC337 C337 C337 W 65 C337 25 C337 W 60 c337 nec PC337HF WS60-00-1 MP-45G

    MMM7210

    Abstract: AN3585 L302 inductor C338 EUROPE C338 c341 transistor diode c341 transistor c341 FR4 SUBSTRATE MICROSTRIP ANTENNA SHEET C342
    Text: Freescale Semiconductor Application Note Document Number: AN3585 Rev. 1.1, 07/2008 PCB Layout Design Guidelines for Radio Board Using the MC13853 LNA 1 Abstract Radio printed circuit boards PCB must effectively integrate the devices and other elements while avoiding


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    PDF AN3585 MC13853 QFN16 MMM7210 AN3585 L302 inductor C338 EUROPE C338 c341 transistor diode c341 transistor c341 FR4 SUBSTRATE MICROSTRIP ANTENNA SHEET C342

    AN3585

    Abstract: c337 transistor C338 c341 transistor MMM7210 C337 C339 C340 C341 C342
    Text: Freescale Semiconductor Application Note Document Number: AN3585 Rev. 1.1, 07/2008 PCB Layout Design Guidelines for Radio Board Using the MC13853 LNA 1 Abstract Radio printed circuit boards PCB must effectively integrate the devices and other elements while avoiding


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    PDF AN3585 MC13853 QFN16 AN3585 c337 transistor C338 c341 transistor MMM7210 C337 C339 C340 C341 C342

    DIODE SMD c336

    Abstract: xcf025 xcf02sv020 b30 c300 DIODE cd c326 MOLEX 87832-1420 SMD fuse P200 xcf02sv020c smdc110f XCF025V
    Text: High Speed Deserialization Board HSDB HSC-ADC-FPGA FUNCTIONAL BLOCK DIAGRAM MULTI-CHANNEL ADC EVALUATION BOARD POWER SUPPLY SERIAL LVDS PER ADC FILTERED ANALOG INPUT CLOCK CIRCUIT HSC-ADC-FPGA HSC-ADC-EVALA/B-DC +3V XILINX FPGA XC2V250 FIFO1 32k SPI CLOCK INPUT


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    PDF XC2V250 120-PIN XC2V250-5FG256C AD9287, AD9219, AD9228, AD9229, AD9259 EB05053-0-11/05 DIODE SMD c336 xcf025 xcf02sv020 b30 c300 DIODE cd c326 MOLEX 87832-1420 SMD fuse P200 xcf02sv020c smdc110f XCF025V

    XCF02SV020C

    Abstract: Xilinx xcf02sv020c manual SMHU diode c329 JP105 xcf02sv020 C337 W 63 c338 pin details SMHU transistor c331
    Text: High Speed Deserialization Board HSDB HSC-ADC-FPGA FEATURES FUNCTIONAL BLOCK DIAGRAM STANDARD USB 2.0 SERIAL LVDS HIGH SPEED ADC EVALUATION BOARD PS HSC-ADC-FPGA PS REG n FILTERED ANALOG INPUT Any high speed ADC evaluation board that supports serial LVDS digital output format


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    PDF XC2V250 133MHz 120-PIN 05053-0RL XC2V250-5FG256C XCF02SV020C CBSB-14-01A-RT SNT-100-BK-G-H HSC-ADC-FPGA-9289 XCF02SV020C Xilinx xcf02sv020c manual SMHU diode c329 JP105 xcf02sv020 C337 W 63 c338 pin details SMHU transistor c331

    TI431

    Abstract: transistor c331 TI430 u334 U433 CAN BUS SENSOR u233a transistor C438 c341 transistor D331 transistor
    Text: 1 2 3 4 5 6 D D Processor Processor -RESET ALERT PHOTO_DET THERMISTOR CANRXA ADDR0 ADDR1 VREF165 -RESET ALERT PHOTO_DET THERMISTOR CANRXA ADDR0 ADDR1 VREF165 C +MTR_ON_LED MTR_MODE_LED +FAN_ON FAN_MODE_LED +HEATER_ON MTR_POS_0 MTR_POS_1 MTR_POS_2 MTR_POS_3


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    PDF VREF165 TI431 transistor c331 TI430 u334 U433 CAN BUS SENSOR u233a transistor C438 c341 transistor D331 transistor

    76M12

    Abstract: u19 c629 c639 M21125 microwave inverter panasonic c86 sot23-8 smd m21 sot23 panasonic inverter microwave diode C646 PANASONIC C372
    Text: M21125/M21115 Evaluation Module User Guide 21125-EVMD-001-A February 2009 Revision History Revision Date A February 2009 21125-EVMD-001-A Description Initial release Mindspeed Technologies Mindspeed Proprietary and Confidential 2 Contents 1.0 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


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    PDF M21125/M21115 21125-EVMD-001-A 76M12 u19 c629 c639 M21125 microwave inverter panasonic c86 sot23-8 smd m21 sot23 panasonic inverter microwave diode C646 PANASONIC C372

    PSMN2R0-30YL

    Abstract: No abstract text available
    Text: PSMN2R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 7 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PSMN2R0-30YL PSMN2R0-30YL

    PSMN5R0-30YL

    Abstract: No abstract text available
    Text: PSMN5R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 4 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PSMN5R0-30YL PSMN5R0-30YL

    C337 w 79

    Abstract: PSMN2R5-30YL
    Text: PSMN2R5-30YL N-channel TrenchMOS logic level FET Rev. 03 — 28 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PSMN2R5-30YL PSMN2R5-30YL C337 w 79

    PSMN9R0-30YL

    Abstract: No abstract text available
    Text: PSMN9R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 5 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PSMN9R0-30YL PSMN9R0-30YL

    PH5030AL

    Abstract: PH5030
    Text: PH5030AL N-channel TrenchMOS logic level FET Rev. 03 — 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PH5030AL PH5030AL PH5030

    PSMN3R0-30YL

    Abstract: No abstract text available
    Text: PSMN3R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 28 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PSMN3R0-30YL PSMN3R0-30YL

    PH9030AL

    Abstract: PH9030AL SOT669 PH9030A
    Text: PH9030AL N-channel TrenchMOS logic level FET Rev. 07 — 14 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PH9030AL PH9030AL PH9030AL SOT669 PH9030A

    PSMN6R0-30YL

    Abstract: No abstract text available
    Text: PSMN6R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 4 Januari 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PSMN6R0-30YL PSMN6R0-30YL

    PSMN4R0-30YL

    Abstract: No abstract text available
    Text: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 31 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PSMN4R0-30YL PSMN4R0-30YL

    PSMN3R5-30YL

    Abstract: No abstract text available
    Text: PSMN3R5-30YL N-channel TrenchMOS logic level FET Rev. 03 — 31 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PSMN3R5-30YL PSMN3R5-30YL

    v42254-a3346

    Abstract: V42254-A3216-B309
    Text: SBM 383 with soldering terminal Type B_ Soldering pins fo r printed circuits Soldering pins, straight Special features - Extremely wide range of applications for job lots in laboratories and for use in mass-produced equipment. Few tools required for wiring and assembly.


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    PDF 15-contact 25-contact 37-contact V23529-A1221-B 25-contact, v42254-a3346 V42254-A3216-B309

    burndy Y39

    Abstract: YAV4C-TC14-FXB
    Text: f_ I SE208075 I_ I ACCOMMODATES 5_ I_ 5_ I_ “* DIMENSIONS STUD SIZE CATALOG NUMBER 1/2 YA30-TC12-FXB 2.76 1.20 ±.04 .56 4.04 .62 2.70 £55J £30] m [14] [103] [16] [69J — 263 KcmiL C650/24 — - 7/2 250 FLEX CLASS I,K,M


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    PDF SE208075 SE206075-01 5E208075 burndy Y39 YAV4C-TC14-FXB