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    C338 TRANSISTOR Search Results

    C338 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C338 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c337 transistor

    Abstract: c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340
    Text: PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


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    PDF IRGBC20M-S 10kHz) SMD-220 C-340 c337 transistor c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340

    c337 transistor

    Abstract: C337 w 79 transistor c337 C336 SMD c338 transistor c336 transistors C337 W 80 transistor C337 W transistor SMD LOA transistor c338
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


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    PDF IRGBC20M-S 10kHz) SMD-220 C-340 c337 transistor C337 w 79 transistor c337 C336 SMD c338 transistor c336 transistors C337 W 80 transistor C337 W transistor SMD LOA transistor c338

    c337 transistor

    Abstract: C338 c338 transistor
    Text: PH1825AL N-channel TrenchMOS logic level FET Rev. 01 — 22 April 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PDF PH1825AL PH1825AL c337 transistor C338 c338 transistor

    CD22859

    Abstract: crystal 3.579545MHZ datasheet telephone keypad interface circuit with dtmf two Tone generator CD22859E R3611
    Text: CD22859 S E M I C O N D U C T O R Monolithic Silicon COS/MOS Dual-Tone Multifrequency Tone Generator January 1997 Features Description • Mute Drivers On-Chip The CD22859 is a CMOS dual-tone multifrequency DTMF tone generator for use in dual-tone telephone dialing systems. The device can easily be interfaced to a standard


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    PDF CD22859 CD22859 579545MHz CD22859E R1-80 R3-66 R2-73 R4-59 crystal 3.579545MHZ datasheet telephone keypad interface circuit with dtmf two Tone generator CD22859E R3611

    CD22

    Abstract: CD22859 7662 HARRIS contemp
    Text: Semiconductor T UCT ROD ACEMEN 47 P E 7 T L OLE REP 00-442-7 OBS ENDED 8 M ns 1 .com COM pplicatio @harris E R NOSheet tapp ral A Data February 1999 Cent ail: cen l l a m C e or Monolithic Silicon COS/MOS Dual-Tone Multifrequency Tone Generator [ /Title The CD22859 is a CMOS dual-tone multifrequency DTMF


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    PDF CD22859 579545MHz R1-80 R3-66 R2-73 R4-59 CD22 7662 HARRIS contemp

    DIODE SMD v105

    Abstract: DIODE SMD c336 smd V105 TP218 transistor 27C202 TCO-987 C219-33 diode V105 L-286 C345 plastic transistor
    Text: INTEGRATED CIRCUITS DATA SHEET SAA1575HL Global Positioning System GPS baseband processor Product specification Supersedes data of 1999 May 17 File under Integrated Circuits, IC18 1999 Jun 04 Philips Semiconductors Product specification Global Positioning System (GPS)


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    PDF SAA1575HL 80C51XA 285002/02/pp56 DIODE SMD v105 DIODE SMD c336 smd V105 TP218 transistor 27C202 TCO-987 C219-33 diode V105 L-286 C345 plastic transistor

    smd code A9 3 pin transistor

    Abstract: EL 817 c334 transistor SMD MARKING CODE 772 smd transistor marking code D13 LM317T voltage regulator 1n4007 smd diode R-20610 DIODE SMD v105 varactor smd BPF302
    Text: INTEGRATED CIRCUITS DATA SHEET SAA1575HL Global Positioning System GPS baseband processor Product specification Supersedes data of 1999 May 17 File under Integrated Circuits, IC18 1999 Jun 04 Philips Semiconductors Product specification Global Positioning System (GPS)


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    PDF SAA1575HL 80C51XA SAA1575HL/V2 SAA1575HLBE OT407 smd code A9 3 pin transistor EL 817 c334 transistor SMD MARKING CODE 772 smd transistor marking code D13 LM317T voltage regulator 1n4007 smd diode R-20610 DIODE SMD v105 varactor smd BPF302

    d331 npn transistor

    Abstract: pin configuration NPN transistor c458 transistor C458 D331 transistor D330 NPN transistor d331 npn transistor pin configuration smd diode D450 c458 NPN transistor smd diode D451 transistor D450
    Text: Application Report SLEA055 - JUNE 2006 TAS5508-5142K7EVM Application Report Jonas Svendsen, Tomas Bruunshuus Digital Audio & Video Products The TAS5508-5142K7EVM PurePath Digital customer evaluation module demonstrates the integrated circuits, TAS5508BPAG and TAS5142DKD, from Texas Instruments TI .


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    PDF SLEA055 TAS5508-5142K7EVM TAS5508BPAG TAS5142DKD, 32-bit 24-bit 48-bit TIC-HSINK-015 d331 npn transistor pin configuration NPN transistor c458 transistor C458 D331 transistor D330 NPN transistor d331 npn transistor pin configuration smd diode D450 c458 NPN transistor smd diode D451 transistor D450

    TRANSISTOR SMD K23

    Abstract: C345 plastic transistor TP218 transistor SMD transistor k23 C219-33 DIODE SMD v105 EL 817 c321 MHB320 varactor V104 C318 transistor
    Text: INTEGRATED CIRCUITS DATA SHEET UAA1570HL Global Positioning System GPS front-end receiver circuit Product specification File under Integrated Circuits, IC18 1999 May 10 Philips Semiconductors Product specification Global Positioning System (GPS) front-end


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    PDF UAA1570HL 285002/00/01/pp76 TRANSISTOR SMD K23 C345 plastic transistor TP218 transistor SMD transistor k23 C219-33 DIODE SMD v105 EL 817 c321 MHB320 varactor V104 C318 transistor

    TRANSISTOR SMD K23

    Abstract: EL 817 c321 C345 plastic transistor varactor diode V101 SMD transistor k23 Solid Tantalum Surface Mount Capacitors C106 mark varactor V104 TP218 transistor J201 spice model equivalent transistor LM317T
    Text: INTEGRATED CIRCUITS DATA SHEET UAA1570HL Global Positioning System GPS front-end receiver circuit Product specification File under Integrated Circuits, IC18 1999 May 10 Philips Semiconductors Product specification Global Positioning System (GPS) front-end


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    PDF UAA1570HL 10-May-99 TRANSISTOR SMD K23 EL 817 c321 C345 plastic transistor varactor diode V101 SMD transistor k23 Solid Tantalum Surface Mount Capacitors C106 mark varactor V104 TP218 transistor J201 spice model equivalent transistor LM317T

    transistor C458

    Abstract: d331 npn transistor pin configuration d331 npn transistor pin configuration NPN transistor c458 C458 datasheet c337 pnp transistor D331 PNP c458 NPN transistor smd diode D451 capacitor 100nf 50v 0805 datasheet
    Text: Application Report SLEA061 – JUNE 2006 TAS5518-5152K8EVM Application Report Tomas Bruunshuus, Kim N. Madsen . Digital Audio and Video Products ABSTRACT The TAS5518-5152K8EVM PurePath Digital customer evaluation module


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    PDF SLEA061 TAS5518-5152K8EVM TAS5518PAG TAS5152DKD, 32-bit 24-bit 48-bit transistor C458 d331 npn transistor pin configuration d331 npn transistor pin configuration NPN transistor c458 C458 datasheet c337 pnp transistor D331 PNP c458 NPN transistor smd diode D451 capacitor 100nf 50v 0805 datasheet

    C2625 transistor

    Abstract: C5679 transistor TRANSISTOR C3675 C5679 C2655 NPN Transistor transistor c5855 c3746 transistor transistor c3746 transistor C4770 c5855
    Text: Rack & Cabinet Mounting Converters 150-12 k Watts C SERIES CE Marked - LVD & EMC • Over 1700 Different Models • DC Inputs 10 - 900 Volts • Single & Multi Outputs • Fully Wired Customised Racks • Parallel Redundant Systems • Euro Cassette or Wall Mount


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    PDF C300-C4700, C5600-C5800 C2625 transistor C5679 transistor TRANSISTOR C3675 C5679 C2655 NPN Transistor transistor c5855 c3746 transistor transistor c3746 transistor C4770 c5855

    planar transformer theory

    Abstract: 0805CS-060XMBC 0402CS-10NXJBX do33116p C337 w 79 a4490 0805CS-220XJBC DO3316C-334 MAX2620 SC4501
    Text: 07/2009 COILCRAFT MAGNETICS FOR IC REFERENCE DESIGNS – 2009 COILCRAFT MAGNETICS FOR AVNET MEMEC SUPPLIER REFERENCE DESIGNS Avnet Memec is proud to be a distributor for Coilcraft as well as several leading semiconductor firms, many of whom require high performance inductors and


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    PDF P-4400-335 RUS-127486 planar transformer theory 0805CS-060XMBC 0402CS-10NXJBX do33116p C337 w 79 a4490 0805CS-220XJBC DO3316C-334 MAX2620 SC4501

    transistor c114 est

    Abstract: No abstract text available
    Text: User's Guide SLOU366A – June 2013 – Revised July 2013 PurePathTM Console Motherboard This manual describes the operation of the PurePath Console Motherboard PPCMB , revision D. The PPCMB connects to device under test (DUT) boards. These can be evaluation modules (EVM) or


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    PDF SLOU366A TAS5760xEVM transistor c114 est

    1-450-358-11

    Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
    Text: TA-VE150 SERVICE MANUAL AEP Model UK Model This amplifier has the Dolby Surround system. Manufactured under license from Dolby Laboratories Licensing Corporation. “Dolby”, the double-D symbol a and “Pro Logic” are trademarks of Dolby Laboratories Licensing Corporation.


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    PDF TA-VE150 RM-U150) 1-450-358-11 SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE

    RTCM-SC104 data format version 3.1

    Abstract: RTCM-SC104 data format schematic diagram receiver satellite RTCM-SC104 V101 varicap diode nmea 0183 amplifier schematics power supply satellite receiver transistor c331 rtcm SC-104 specification version 2.1 message type 3 c337 transistor
    Text: USER’S MANUAL SNA/UM98008 User Interface Manual for the EXACT GPS Chip-Set Version 1.2 Philips Semiconductors Philips Semiconductors User Interface Manual for the EXACT GPS Chip-Set User’s Manual (Version 1.2) SNA/UM98008 REVISION HISTORY Version Remarks


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    PDF SNA/UM98008 WGS-84 RTCM-SC104 data format version 3.1 RTCM-SC104 data format schematic diagram receiver satellite RTCM-SC104 V101 varicap diode nmea 0183 amplifier schematics power supply satellite receiver transistor c331 rtcm SC-104 specification version 2.1 message type 3 c337 transistor

    r305 finger print module

    Abstract: bcm4306 toshiba c850 free C828 R305 finger print scan module C828 3-pin transistor logitech c615 logitech c270 NEC C959 transistor c939
    Text: Acer Ferrari 3000 Series Service Guide Service guide files and updates are available on the ACER/CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: VD.FR1V7.001 PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on Ferrari 3000 service guide.


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    c338 transistor

    Abstract: transistor c338 Transistor c340 smd ic LM 338 TRANSISTOR SMD QE CX336
    Text: P D -9.1131A htemational ior]Rectifier IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


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    PDF 10kHz) IRGBC20M-S SMD-220 C-340 c338 transistor transistor c338 Transistor c340 smd ic LM 338 TRANSISTOR SMD QE CX336

    BC338

    Abstract: BC337A BC337 BC327 BC327A BC328 BC337-16 DDE7530 DDE7532
    Text: b^E D • bL S3^131 DDE753D 5T4 BC337 BC337A BC338 IAPX N AflER P H I L I P S / D I S C R E T E SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic T O -92 envelopes, p rim a rily intended fo r use in d riv e r and o u tp u t stages o f a udio a m plifiers.


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    PDF DDE7530 BC337 BC337A BC338 BC337, BC337A, BC338 BC327, BC327A BC328 BC337A BC337 BC327 BC337-16 DDE7532

    C337 W 61

    Abstract: c337 pnp c336 transistors c337 pnp transistor C338 5101B KBR bk 06 BCX70 BCX71 C336
    Text: BCW 61, BCX71 PNP Transistors for A F prestages and switching applications BCW 61 and BCX71 are epitaxial PNP silicon planar transistors in a plastic case 23 A 3 DIN 41869 SO T-23 for AF prestages and switching applications. They are particularly designed for use in thick and thin film circuits. Both types BCW 61


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    PDF BCW61 BCX71 OT-23) BCX71) BCX70. Q62702- C337 W 61 c337 pnp c336 transistors c337 pnp transistor C338 5101B KBR bk 06 BCX70 C336

    F9530

    Abstract: diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530
    Text: HE 0 I 4A5S452 000 fl5âfl fi | Data Sheet No. PD-9.320F INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFS530 IRF9531 P-Channel IRFS532 IRFS533 -100 Volt, 0.3 Ohm HEXFET T0-220AB Plastic Package Features: The HEXFET® technology is the key to International Rectifier’s


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    PDF T0-220AB C-341 43S54S2 IRF9530, IRF9531, IRF9532, IRF9533 T-39-21 C-342 F9530 diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530

    2sc3227

    Abstract: 2SA1267 2Sc4370a BC548 ,BC558 BC337/BC327 bc557 2sc3202 2sa1270 2SC3199 KTC9014
    Text: 1 Transistors Maximum Ratings Electrical Characteristics Ta—25°C Type No Ic Pc (V) (mA) (mW) 50 150 150 ^CE Ic (V) (mA) (V) 70^700 6 2 0.25 MAX fT I« (TYP) M IN NF (TYP) MAX VCE •c (dB) (V) (mA) f (KHz) Rg (KQ) 1 10 6 0.1 1 10 SO T-23 H 6 0.1 1 10


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    PDF 2SC387SS 2SA1S04S OT-23 2SC320I 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2sc3227 2Sc4370a BC548 ,BC558 BC337/BC327 bc557 2sc3202 2sa1270 KTC9014

    2Sc4370a

    Abstract: 2SC3227 BC548 ,BC558 2sa1267 BC337/BC327 2sa1270 bc546 bc556 BC547 sot package sot-23 2SC3200 2SC3202
    Text: 1 Transistors Maximum Ratings Electrical Characteristics Ta—25°C Type No Ic Pc (V) (mA) (mW) 50 150 150 ^CE Ic (V) (mA) (V) 70^700 6 2 0.25 MAX fT I« (TYP) M IN NF (TYP) MAX VCE •c (dB) (V) (mA) f (KHz) Rg (KQ) 1 10 6 0.1 1 10 SO T-23 H 6 0.1 1 10


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    PDF 2SC387SS 2SA1S04S OT-23 2SC320I 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2Sc4370a 2SC3227 BC548 ,BC558 BC337/BC327 2sa1270 bc546 bc556 BC547 sot package sot-23 2SC3200 2SC3202

    ST25C transistor

    Abstract: TRANSISTOR st25a ST25A 2N904 2N905 ST25A transistor A642 transistor pnp BC327 figure ST25B A641 NPN transistor
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V FT4023 ST25C transistor TRANSISTOR st25a ST25A 2N904 2N905 ST25A transistor A642 transistor pnp BC327 figure ST25B A641 NPN transistor