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    C371 TRANSISTOR Search Results

    C371 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    C371 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor C372

    Abstract: c372 transistor transistor c367 transistor C368 c371 transistor C372 O smd transistor 18E c366 transistor smd qe g10 smd transistor
    Text: P D - 9.1141 htemational iörIRectifier IRGBC20MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated - 1 0 m s @ 125°C, VGe = 15V Switching-ioss rating includes all "tail" losses


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    10kHz) IRGBC20MD2-S C-371 SMD-220 C-372 transistor C372 c372 transistor transistor c367 transistor C368 c371 transistor C372 O smd transistor 18E c366 transistor smd qe g10 smd transistor PDF

    c372 transistor

    Abstract: transistor C369 transistor C372
    Text: International lü Rectifier PD -9.1141 IRGBC20MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ps @125°C, VGE= 15V Switching-loss rating includes all "tail" losses


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    IRGBC20MD2-S -10ps 10kHz) C-371 SMD-220 C-372 00201fe2 c372 transistor transistor C369 transistor C372 PDF

    C735

    Abstract: C749 NPN C460 C644 BS9300 c495 C-725 CV7580 c496 c727
    Text: 7 BS9000 Converted CV Case Outlines Small Signal Transistors . B S Type Number Com m ercial Equivalent Case Outline Polarity Ab solute Maximum Rating VCB V VCE V h F E at Co llecto r Current VEB V hFE min. hFE max. 1C mA M in. fT MHz Com m ents 0-76 0 -4 8 0


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    BS9000 8S9300 BS9300 2N2221A' 2N2222A* 2N1893 2N1613 C735 C749 NPN C460 C644 c495 C-725 CV7580 c496 c727 PDF

    f9640

    Abstract: IRF9640 IRF9640 complementary IRF630 complementary IRF630 MOTOR CONTROL CIRCUIT IRF9640 audio irf9640 mosfet C368 IRF9642 IRF9643
    Text: HE D | MñSSMSa GOGûbia 2 I Data Sheet No. PD-9.422A T - ï 'ÿ 'L 3 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IO R IRF964Q IR FS 64Ì FV-CHAIMIMEL 2 0 0 VOLT POWER MOSFETs IR F9642 IR F0643 -2 0 0 Volt, 0.5 Ohm HEXFET T0-220AB Plastic Package


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    T0-220AB IRF9640, IRF9641, IRF9642, IRF9643 T-39-23 C-372 f9640 IRF9640 IRF9640 complementary IRF630 complementary IRF630 MOTOR CONTROL CIRCUIT IRF9640 audio irf9640 mosfet C368 IRF9642 PDF

    transistor C372

    Abstract: c372 transistor transistor C368 c371 transistor AN-994 IRGBC20MD2-S SMD-220 C-366 C369 transistor c369
    Text: PD - 9.1141 IRGBC20MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


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    IRGBC20MD2-S 10kHz) SMD-220 C-372 transistor C372 c372 transistor transistor C368 c371 transistor AN-994 IRGBC20MD2-S SMD-220 C-366 C369 transistor c369 PDF

    transistor C372

    Abstract: transistor C368 c372 transistor transistor c914 transistor c367 scr optoisolator c371 transistor c914 c368 transistor MCL611
    Text: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR


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    MCT210 MCT26 MCT66 MCS2400 transistor C372 transistor C368 c372 transistor transistor c914 transistor c367 scr optoisolator c371 transistor c914 c368 transistor MCL611 PDF

    transistor c372

    Abstract: c372 transistor transistor C369 transistor C368 transistor c367 c368 transistor AN-994 IRGBC20MD2-S SMD-220 C369 transistor
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1141 IRGBC20MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


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    IRGBC20MD2-S 10kHz) SMD-220 C-372 transistor c372 c372 transistor transistor C369 transistor C368 transistor c367 c368 transistor AN-994 IRGBC20MD2-S SMD-220 C369 transistor PDF

    C495 transistor

    Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
    Text: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250


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    BF594 BF594, BF194 BF595 BF195 BF597 BF197 2N4996 BS9300 2N2219A C495 transistor BF194 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495 PDF

    NPN C460

    Abstract: 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 BS9300 CV7496
    Text: Metal Can Complementary Pairs Core Drivers | Polarity Maximum ratin ps 2N 3724A 2N 372 5A NPN N PN T039 T0 3 9 50 80 30 50 6 6 1200 1200 100 100 60 60 150 150 1500 1500 25 20 — - 300 300 100 100 0.20 0.26 2N 3244 PN P T0 3 9 40 40 5 1000 500 50 150 750 25


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    2N3724A 2N3725A 2N3244 BF257 BS9300 2N2219A 2N2221 2N2222 NPN C460 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 CV7496 PDF

    C495 transistor

    Abstract: C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a sm all extra


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    BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633 PDF

    NPN pnp MATCHED PAIRS 2n2905A 2N2219A

    Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
    Text: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW


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    BS9365 2N4036 2N4037 BS3365 2N4030 2N4031 NPN pnp MATCHED PAIRS 2n2905A 2N2219A BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62 PDF

    C495 transistor

    Abstract: transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent
    Text: 7 Metal Can High Current NPN Am plifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV Case BV BV hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75


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    BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 C495 transistor transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent PDF

    C495 transistor

    Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
    Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450


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    4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 BS9300 2N2219A C495 transistor c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 transistor C633 NPN C460 PDF

    transistor c246

    Abstract: transistor c245 transistor c243 c243 SA900 L372 c371 transistor SA900BE IS-136 SA7025
    Text: INTEGRATED CIRCUITS SA900 I/Q transmit modulator Preliminary specification IC17 Data Handbook Philips Semiconductors 1997 Sept 16 Philips Semiconductors Preliminary specification I/Q transmit modulator SA900 DO NOT DISTRIBUTE WITHOUT ECN DATED AFTER Sept 16, 1997


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    SA900 SA900 transistor c246 transistor c245 transistor c243 c243 L372 c371 transistor SA900BE IS-136 SA7025 PDF

    C736

    Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
    Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450


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    4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 BS9300 2N2219A C736 C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633 PDF

    C495 transistor

    Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra


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    BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor PDF

    transistor c246

    Abstract: L372 smd transistor device marking p18 transistor c245 smd transistor marking code T11 philips radio 900MHz semiconductor SMD MARKING CODE ad 5.9 SA900
    Text: INTEGRATED CIRCUITS SA900 I/Q transmit modulator Preliminary specification IC17 Data Handbook Philips Semiconductors 1997 Sept 16 Philips Semiconductors Preliminary specification I/Q transmit modulator SA900 DO NOT DISTRIBUTE WITHOUT ECN DATED AFTER Sept 16, 1997


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    SA900 SA900 transistor c246 L372 smd transistor device marking p18 transistor c245 smd transistor marking code T11 philips radio 900MHz semiconductor SMD MARKING CODE ad 5.9 PDF

    smd diode C544

    Abstract: 10MQ040N Motorola DAP head smd diode c640 smd diode R622 toshiba c640 npn transistors C540 philips home theater power supply board semiconductor c243 sharp smd diode C641
    Text: Application Report SLEA036 - June 2004 TAS5010-5112F2EVM Application Report Jonas Svendsen Digital Audio and Video Products The TAS5010-5112F2EVM PurePath Digital customer evaluation module demonstrates the integrated circuits TAS5010PFB and TAS5112ADFD from Texas Instruments.


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    SLEA036 TAS5010-5112F2EVM TAS5010PFB TAS5112ADFD 24-bit TAS5010-5112F2EVM MECH01 smd diode C544 10MQ040N Motorola DAP head smd diode c640 smd diode R622 toshiba c640 npn transistors C540 philips home theater power supply board semiconductor c243 sharp smd diode C641 PDF

    E4600

    Abstract: se 1117 ad crystal oscillator 850mhz VGA Multiplier IC IS-54 KV1470 SA7025 SA900 SA900BE cell phone detector circuit philips
    Text: NAPC/PHILIPS SEHICQND b7 E D • bbSB'JSM □OÔ'ISTS Philip* Semiconductor* RF Communication* Product* « S IC 3 û b l Product *peciflcation l/Q transmit modulator DESCRIPTION SA900 PIN CONFIGURATION BE Package # 5 3 l i - . - o . o l i l 3^1 Vcc H ] GND


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    SA900 SA900 836MHz, -10dBm) E4600 se 1117 ad crystal oscillator 850mhz VGA Multiplier IC IS-54 KV1470 SA7025 SA900BE cell phone detector circuit philips PDF

    Motorola DAP head

    Abstract: diode C622 AKS TI toshiba c640 smd diode C544 smd diode C543 Diode c514 smd diode C641 motorola s240 motorola c381
    Text: Application Report SLEA036A - June 2004 – Revised April 2008 TAS5010-5112F2EVM Application Report Jonas Svendsen Digital Audio and Video Products The TAS5010-5112F2EVM PurePath Digital customer evaluation module demonstrates the integrated circuits TAS5010PFB and TAS5112ADFD from Texas Instruments.


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    SLEA036A TAS5010-5112F2EVM TAS5010PFB TAS5112ADFD 24-bit Motorola DAP head diode C622 AKS TI toshiba c640 smd diode C544 smd diode C543 Diode c514 smd diode C641 motorola s240 motorola c381 PDF

    dap 002

    Abstract: transistor a708 a708 transistor NPN A708 toshiba c640 DAP 07 power supply C516* npn transistor npn transistors C540 A708 smd c643
    Text: Application Report SLEA035 – June 2004 TAS5001-5122C2EVM Application Report Jonas Svendsen Digital Audio & Video Products The TAS5001-5122C2EVM PurePath Digital customer evaluation module demonstrates the integrated circuits TAS5001PFB and TAS5122DCA from Texas Instruments.


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    SLEA035 TAS5001-5122C2EVM TAS5001PFB TAS5122DCA 24-bit dap 002 transistor a708 a708 transistor NPN A708 toshiba c640 DAP 07 power supply C516* npn transistor npn transistors C540 A708 smd c643 PDF

    DAP 002 power supply

    Abstract: dap 002 transistor a708 toshiba c640 a708 transistor NPN A708 npn transistors C540 A708 diode c341 DAP 07 power supply
    Text: Application Report SLEA035A – June 2004 – Revised April 2008 TAS5001-5122C2EVM Application Report Jonas Svendsen Digital Audio and Video Products The TAS5001-5122C2EVM PurePath Digital customer evaluation module demonstrates the integrated circuits TAS5001PFB and TAS5122DCA from Texas Instruments.


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    SLEA035A TAS5001-5122C2EVM TAS5001PFB TAS5122DCA 24-bit DAP 002 power supply dap 002 transistor a708 toshiba c640 a708 transistor NPN A708 npn transistors C540 A708 diode c341 DAP 07 power supply PDF

    transistor c114 esh

    Abstract: subwoofer box measurements transistor c905 C3B-A0336 capacitor 100nf 100v polyester 6v to 12v converter mini project U904 smd r603 capacitor 100nf 100v RJ843-4W
    Text: User's Guide SLAU221A – May 2007 – Revised June 2007 TAS5162DDV6EVM2 This user's guide describes the operation of the evaluation module for the TAS5162 Digital Amplifier Power Output Stage using TAS5518 Digital Audio PWM Processor from Texas Instruments. The user's guide also provides measurement data and design


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    SLAU221A TAS5162DDV6EVM2 TAS5162 TAS5518 transistor c114 esh subwoofer box measurements transistor c905 C3B-A0336 capacitor 100nf 100v polyester 6v to 12v converter mini project U904 smd r603 capacitor 100nf 100v RJ843-4W PDF

    philips subwoofer amplifier dap 300

    Abstract: wj332 5.1 subwoofer audio amplifier pcb layout RCA 4136 RC0603JR-071ML Simple computer subwoofer circuit a830 3M Touch Systems 1812M DIODE SMD c335
    Text: User's Guide SLAU223 – June 2007 TAS5162DKD6EVM This user's guide describes the operation of the evaluation module for the TAS5162 Digital Amplifier Power Output Stage using the TAS5518 Digital Audio PWM Processor from Texas Instruments. The user's guide also provides measurement data and design information such as the schematic, BOM, and


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    SLAU223 TAS5162DKD6EVM TAS5162 TAS5518 philips subwoofer amplifier dap 300 wj332 5.1 subwoofer audio amplifier pcb layout RCA 4136 RC0603JR-071ML Simple computer subwoofer circuit a830 3M Touch Systems 1812M DIODE SMD c335 PDF