schematic diagram lcd monitor dell
Abstract: RTL8187 Wiring Diagram RTL8187 MHC-W21-601 TWL4030 schematic diagram lcd monitor dell 17 testing motherboards using multi meter 1gb usb flash drive circuit diagram sandisk nokia mobile jumper setting nokia 2300 circuit diagram
Text: BeagleBoard System Reference Manual REF: BB_SRM Revision C4 C4 BeagleBoard System Reference Manual Rev C4 Revision 0.0 December 15, 2009 Page 1 of 180 REF: BB_SRM BeagleBoard System Reference Manual Revision C4 THIS DOCUMENT This work is licensed under the Creative Commons Attribution-Share Alike 3.0 Unported
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Abstract: No abstract text available
Text: 9 =W S age C3 P H Ro oir / See E - C4 E C3 N - C4 N CAPACITANCE NETWORKS - RC NETWORKS Tension nominale / Rated voltage URC V 2 3 2 3 4 1 2 3 4 0,78 0,45 C1 = C2 = C3 = C4 1 C1 1 2 3 C2 4 C3 2 C4 3 4 Sur demande / On request : C1 # C2 # C3 # C4 Consulter notre Service Commercial
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E12E24E48
200il
F-67441
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MeP-c4
Abstract: mep toshiba architecture MEP core MeP-c4 architecture Toshiba MeP mep toshiba programming stc 280 mep architecture "saturation" "instruction" VLIW
Text: User’s Manual MeP Core MeP-c4 User’s Manual (Architecture) MeP Core (MeP-c4) User’s Manual (Architecture) Semiconductor Company MeP Core (MeP-c4) User’s Manual (Architecture) The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products.
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MEPUM05005-E22
MeP-c4
mep toshiba architecture
MEP core
MeP-c4 architecture
Toshiba MeP
mep toshiba programming
stc 280
mep architecture
"saturation" "instruction"
VLIW
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LT 7232
Abstract: ISO7816 LTC1348CG LTC1955 LTC1955EUH MC68L11E9PB2
Text: = !"#$%& ' J= ! 289 Steven Martin Visa F MasterCard E !"#$%&'()* !"# =C4 =C8 F !"#$%&'()*+,-) !"#$%&'()*+,-.&/010 !F= !"#$%&'()*+,- E !"#$% =ISO7816 !"#$%&'() !"#$%&'()*+,-./0112 * !"#!$%&'()*+,-./012 !"#$%&'%&()* !"#$%& LTC 1955 +,-./ !'()*+, !"#$%#&
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ISO7816
LTC1955
dn289f
LT 7232
ISO7816
LTC1348CG
LTC1955
LTC1955EUH
MC68L11E9PB2
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GPI04
Abstract: No abstract text available
Text: 3 2 2 R29 LED5 475 1% B R41 33 2512 VREG R37 33 2512 R5 100 1% C5 C5 OPT Q5 0805 BSS308PE 5 16 17 19 20 C31 10nF S5 21 22 23 Q4 BSS308PE 24 C4 C4 OPT 0805 S4 SDO IB C10 SDI(IC) S10 SCK(ILP) C9 CSB(ILM) S9 ISOMD C8 WDT S8 DRIVE C7 VREG S7 SWTEN C6 VREF1 S6
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BSS308PE
LTC6804IG-2
1942B
GPI04
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Abstract: No abstract text available
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4
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MMBT1815
150mA
MMBT1015
OT-113
QW-R210-004
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smd diode marking 79
Abstract: BB141 marking code 4 SC-79 MARKING C SOD523 smd marking 76 smd diode code 39 marking code b SC-79
Text: LESHAN RADIO COMPANY, LTD. Low-voltage variable capacitance diode BB 141 FEATURES • Excellent linearity · Ultra small plastic SMD package · C4: 2.38 pF; ratio: 1.76 · Low series resistance. APPLICATIONS · Voltage controlled oscillators VCO . DESCRIPTION
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BB141
OD523
SC-79)
OD523
SC-79
smd diode marking 79
marking code 4 SC-79
MARKING C SOD523
smd marking 76
smd diode code 39
marking code b SC-79
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Bb142
Abstract: marking code 4 SC-79
Text: LESHAN RADIO COMPANY, LTD. Low-voltage variable capacitance diode BB 142 FEATURES • Excellent linearity · Ultra small plastic SMD package · C4: 2.05 pF; ratio: 2.2 · Low series resistance. APPLICATIONS · Voltage controlled oscillators VCO . DESCRIPTION
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BB142
OD523
SC-79)
OD523
SC-79
marking code 4 SC-79
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transistor marking c4
Abstract: UTCMMBT1815
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 2 3 MARKING SOT-523 C4
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MMBT1815
150mA
MMBT1015
OT-523
QW-R221-009
transistor marking c4
UTCMMBT1815
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MMBT1015
Abstract: MMBT1815
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4
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MMBT1815
150mA
MMBT1015
OT-113
QW-R210-004
MMBT1015
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Untitled
Abstract: No abstract text available
Text: Low-voltage variable capacitance diode BB 142 FEATURES • Excellent linearity · Ultra small plastic SMD package · C4: 2.05 pF; ratio: 2.2 · Low series resistance. APPLICATIONS · Voltage controlled oscillators VCO . DESCRIPTION The BB142 is a variable capacitance
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BB142
OD523
SC-79)
OD523
SC-79
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Untitled
Abstract: No abstract text available
Text: Low-voltage variable capacitance diode BB 141 FEATURES • Excellent linearity · Ultra small plastic SMD package · C4: 2.38 pF; ratio: 1.76 · Low series resistance. APPLICATIONS · Voltage controlled oscillators VCO . DESCRIPTION The BB141 is a variable capacitance
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BB141
OD523
SC-79)
OD523
SC-79
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433 mhz ask rf module
Abstract: ENW5Z604NC3 ENW59604NC3 PAN2350 marking code c4 ENW59604NC4 433 MHz receiver modul 3 pin 433MHz IC 433mhz rx ASK receiver 433mhz
Text: CLASSIFICATION PRODUCT SPECIFICATION for Supply Einstufung Produktspezifikation (zur Lieferung) SUBJECT TRANSCEIVER MODULE Thema bidirektionales Funkmodul CUSTOMER’S CODE MATSUSHITA’S CODE PAN2350 433MHz ENW59604NC3 or C4 1. No. REV. DS-2350-433-102
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PAN2350
433MHz
ENW59604NC3
DS-2350-433-102
CC1020
ENW59604NCita
433 mhz ask rf module
ENW5Z604NC3
marking code c4
ENW59604NC4
433 MHz receiver modul 3 pin
433MHz IC
433mhz rx
ASK receiver 433mhz
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Untitled
Abstract: No abstract text available
Text: RFSA3714 RFSA3714 50MHz to 6000MHz, Digital Step Attenuator C0.5 C1 C2 C4 C8 C16 The RFMD’s RFSA3714 is a 7-bit digital step attenuator DSA that features high linearity over the entire 31.75dB gain control range with 0.25dB steps. The RFSA3714 features
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RFSA3714
50MHz
6000MHz,
RFSA3714
24-pin,
50MHny
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Untitled
Abstract: No abstract text available
Text: RFSA3714 RFSA3714 50MHz to 4000MHz, Digital Step Attenuator C0.5 C1 C2 C4 C8 C16 The RFMD’s RFSA3714 is a 7-bit digital step attenuator DSA that features high linearity over the entire 31.75dB gain control range with 0.25dB steps. The RFSA3714 features
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RFSA3714
50MHz
4000MHz,
RFSA3714
24-pin,
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Untitled
Abstract: No abstract text available
Text: RFSA3715 RFSA3715 50MHz to 4000MHz, Digital Step Attenuator C0.25 C0.5 C1 C2 C4 C8 C16 SI The RFMD’s RFSA3715 is a 7-bit digital step attenuator DSA that features high linearity over the entire 31.75dB gain control range with 0.25dB steps. The RFSA3715 features
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RFSA3715
50MHz
4000MHz,
RFSA3715
32-pin,
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Untitled
Abstract: No abstract text available
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR
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MMBT1815
150mA
MBT1015
OT-23
QW-R206-014
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TSW10907GS
Abstract: No abstract text available
Text: RFSA3715 RFSA3715 50MHz to 4000MHz, Digital Step Attenuator C0.25 C0.5 C1 C2 C4 C8 C16 SI The RFMD’s RFSA3715 is a 7-bit digital step attenuator DSA that features high linearity over the entire 31.75dB gain control range with 0.25dB steps. The RFSA3715 features
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RFSA3715
50MHz
4000MHz,
RFSA3715
32-pin,
TSW10907GS
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Untitled
Abstract: No abstract text available
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR
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MMBT1815
150mA
MBT1015
OT-23
QW-R206-014
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Untitled
Abstract: No abstract text available
Text: RFSA3715 RFSA3715 50MHz to 4000MHz, Digital Step Attenuator C0.25 C0.5 C1 C2 C4 C8 C16 SI The RFMD’s RFSA3715 is a 7-bit digital step attenuator DSA that features high linearity over the entire 31.75dB gain control range with 0.25dB steps. The RFSA3715 features
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RFSA3715
50MHz
4000MHz,
RFSA3715
32-pin,
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mbt1015
Abstract: MMBT1815
Text: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MBT1015 1 3 MARKING SOT-23 C4 1: EMITTER 2: BASE 3: COLLECTOR
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MMBT1815
150mA
MBT1015
OT-23
QW-R206-014
mbt1015
MMBT1815
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ccd diode
Abstract: dalsa ia-d2-0512 D0G0332 ccd diode datasheet
Text: 4ÖE D • EblSTTM ^ PA LSA S fifl C CD Image OOOQSSb bS8 B I D A L S IN C . | L-C3/IL-C4 TURBOSENSOR S e n s o rs IL-C3/IL-C4 Linear Image Sensor Arrays PALSA ''"’P ' ^ I -3 S INC FEATURES_ • 60 MHz Effective Data Rate
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IA-D2-0512
ccd diode
dalsa ia-d2-0512
D0G0332
ccd diode datasheet
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IL-C6-2048
Abstract: IL-C2-0512 Dalsa ccd diode DDD0257 IL-C3-0128 IL-C3-0256 IL-C3-0512 IL-C4-1024 IL-C4-2048
Text: 4ÖE D • EblSTTM ^ PA LSA S fifl C CD Image OOOQSSb bS8 BI D A L S IN C . | L-C3/IL-C4 TURBOSENSOR S e n s o rs IL-C3/IL-C4 Linear Image Sensor Arrays ''"’P ' ^ I -3 S PALSA INC FEATURES_ • 60 MHz Effective Data Rate
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QQ0033S
IA-D2-0512
IL-C6-2048
IL-C2-0512
Dalsa
ccd diode
DDD0257
IL-C3-0128
IL-C3-0256
IL-C3-0512
IL-C4-1024
IL-C4-2048
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Untitled
Abstract: No abstract text available
Text: HVU358-Variable Capacitance Diode for VCO Features • • • • Outline Low series resistance. rs=0.4Q max High capacitance ratio. (n=2.0min at C1/C4) Good linearity of C'-V curve. Ultra small Resin Package (URP) is suitable for surface mount design.
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HVU358--------Variable
HVU358
HVU358
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