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    C4684 Price and Stock

    Microchip Technology Inc MIC4684YM-TR

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    Microchip Technology Inc MIC4684YM

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    DigiKey MIC4684YM Tube 960 1
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    Microchip Technology Inc MIC4684YM 40
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    Microchip Technology Inc MIC4684BM

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    DigiKey MIC4684BM Tube 380
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    Microchip Technology Inc MIC4684BM-TR

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    DigiKey MIC4684BM-TR Reel 2,500
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    Microchip Technology Inc MIC4684-5.0BM

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    DigiKey MIC4684-5.0BM Tube 570
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    C4684 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C4684

    Abstract: 2SC4684 IC-106 05A800
    Text: C4684 東芝トランジスタ シリコンNPNエピタキシャル形 C4684 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE 1 = 800~3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC4684 20070701-JA C4684 2SC4684 IC-106 05A800

    C4684

    Abstract: 2SC4684
    Text: C4684 TOSHIBA Transistor Silicon NPN Epitaxial Type C4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) · Low collector saturation voltage


    Original     		PDF 2SC4684 C4684 2SC4684

    C4684

    Abstract: 2SC4684 datasheets 2SC4684
    Text: C4684 TOSHIBA Transistor Silicon NPN Epitaxial Type C4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage


    Original     		PDF 2SC4684 C4684 2SC4684 datasheets 2SC4684

    c4684

    Abstract: c468 2SC468 2SC4684 datasheets 2SC4684
    Text: Transistors SMD Type Silicon NPN Epitaxial C4684 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 High power dissipation.


    Original     		PDF 2SC4684 O-252 C4684 c4684 c468 2SC468 2SC4684 datasheets 2SC4684

    Untitled

    Abstract: No abstract text available
    Text: C4684 TOSHIBA Transistor Silicon NPN Epitaxial Type C4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage


    Original     		PDF 2SC4684

    c4684

    Abstract: 2SC4684
    Text: C4684 TOSHIBA Transistor Silicon NPN Epitaxial Type C4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage


    Original     		PDF 2SC4684 c4684 2SC4684

    c4684

    Abstract: No abstract text available
    Text: C4684 TOSHIBA Transistor Silicon NPN Epitaxial Type C4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage


    Original     		PDF 2SC4684 c4684

    Untitled

    Abstract: No abstract text available
    Text: C4684 TOSHIBA Transistor Silicon NPN Epitaxial Type C4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage


    Original     		PDF 2SC4684

    htc hd2 schematic

    Abstract: KBC-M38857 r2561 h946 D2041 C3931 L5631 ASUS RN10B smd diode a3l
    Text: 5 4 3 2 1 FILE LIST THERMAL A3 BLOCK DIAGRAM D 05 POWER IMVP4 BANIAS 24.5W FAN 35 03 37 38 39 40 41 42 43 44 45 04 PSB C North Bridge DDR A3N 855GM 266 A3L 852GM 266 CPU Celeron/ Banias/ Dothan(400) Celeron/ Banias/ Dothan(400) Celeron/ Banias/ Dothan(400)


    Original     		PDF 855GM 852GM 855GM/GME 852GM/GMV/GME 855GME 852GME 852GMV ATA100 V5USB01 V5USB24 htc hd2 schematic KBC-M38857 r2561 h946 D2041 C3931 L5631 ASUS RN10B smd diode a3l

    c4684

    Abstract: 2SC4684 2SC4684 datasheets
    Text: C4684 TOSHIBA Transistor Silicon NPN Epitaxial Type C4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage


    Original     		PDF 2SC4684 c4684 2SC4684 2SC4684 datasheets

    C4684

    Abstract: 2SC4684
    Text: C4684 東芝トランジスタ シリコンNPNエピタキシャル形 C4684 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE 1 = 800~3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC4684 C4684 2SC4684

    C4684

    Abstract: 2SC4684 0310a
    Text: C4684 TOSHIBA Transistor Silicon NPN Epitaxial Type C4684 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low collector saturation voltage


    Original     		PDF 2SC4684 C4684 2SC4684 0310a

    c4684

    Abstract: No abstract text available
    Text: * JL DO NOT DIMENSIONS SCA LE IN MM 3 . 00 \ :è r cn oo If it N CM _ cm □= Ï: f-r \ 5 -°° \ X 1 0 -0 0 " » \ "O. MAT£RJAL: 30X^G.F. fc- PBT. BLACK ^ USED PN'T7MER HOUSING P T . No. 2 343403-1. r f o r r e f e r e n c e o n ly WILL NOT BE UP-DATED CUSTOMER DWG


    OCR Scan     		PDF C4684