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    C4G TRANSISTOR Search Results

    C4G TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C4G TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c4g TRANSISTOR

    Abstract: transistor C4G CMLT3906EG X10-4 CMLT3904EG MARKING code 46g MARKING code 46g sot 563
    Text: Central CMLT3904EG NPN CMLT3906EG PNP CMLT3946EG NPN/PNP ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT3904EG two single NPN , CMLT3906EG (two single PNP), and CMLT3946EG (one each NPN and PNP complementary)


    Original     		PDF CMLT3904EG CMLT3906EG CMLT3946EG CMLT3904EG CMLT3906EG CMLT3946EG OT-563 CMLT3904EG: CMLT3906EG: c4g TRANSISTOR transistor C4G X10-4 MARKING code 46g MARKING code 46g sot 563

    Untitled

    Abstract: No abstract text available
    Text: MMBT1815W NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 Description A L The MMBT1815W is designed for use in driver stage of AF amplifier and general purpose amplification. 3 1 Top View V B S 2 G COLLECTOR


    Original     		PDF MMBT1815W OT-323 MMBT1815W 100mA, 300us, 01-Jun-2002

    Untitled

    Abstract: No abstract text available
    Text: SMBT1815 NPN Silicon Elektroni sche Bauelemente Epitaxial Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SC-59 A Description L The SMBT1815 is designed for use Driver Stage of AF Amplifier and General Purpose Application.


    Original     		PDF SMBT1815 SC-59 SMBT1815 100mA 100MHz 01-Jun-2002

    c4g TRANSISTOR

    Abstract: No abstract text available
    Text: NPN Epitaxial Planar Transistor Data Sheet Mechanical Dimensions FMBT1815 Description .110 .060 3 3 .037 2 2 .115 .037 .016 2 3 1 1 1 .043 .016 .004 Maximum Ratings Ratings Collector - Emitter Voltage Symbol VCEO Collector - Base Voltage Emitter - Base Voltage


    Original     		PDF FMBT1815 FMBT1815 c4g TRANSISTOR

    c4g TRANSISTOR

    Abstract: transistor C4G driver transistor hfe 60 transistor 2SC1815 2SC1815W 380 transistor transistor A1
    Text: 2SC1815W NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description The 2SC1815W is designed for use in driver stage of AF amplifier and general purpose amplificaion. Millimeter REF. Min. 0.80 0.80 1.80 1.15 1.80


    Original     		PDF 2SC1815W 2SC1815W 150mA 100MHz width380 01-Jun-2002 c4g TRANSISTOR transistor C4G driver transistor hfe 60 transistor 2SC1815 380 transistor transistor A1

    MMBT1015

    Abstract: MMBT1815 c4g TRANSISTOR sot323 transistor marking
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR „ * * * * „ FEATURES Collector-Emitter Voltage: BVCEO=50V Collector Current up to 150mA High hFE Linearity Complement to MMBT1015 ORDERING INFORMATION


    Original     		PDF MMBT1815 150mA MMBT1015 MMBT1815-x-AC3-R MMBT1815-x-AE3-R MMBT1815-x-AL3-R MMBT1815-x-AN3-R MMBT1815L-x-AC3-R MMBT1815L-x-AE3-R MMBT1815L-x-AL3-R MMBT1015 MMBT1815 c4g TRANSISTOR sot323 transistor marking

    MMBT1815G

    Abstract: transistors marking c4y transistor C4G UTC MMBT1815G transistor C4G sot-23 MMBT1815 MMBT1015 MMBT1815L transistor CE 014 c4g TRANSISTOR
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR „ FEATURES *Collector-Emitter Voltage: BVCEO=50V *Collector current up to 150mA *High hFE linearity *Complement to MMBT1015 Lead-free: MMBT1815L Halogen-free:MMBT1815G


    Original     		PDF MMBT1815 150mA MMBT1015 MMBT1815L MMBT1815G MMBT1815-x-AC3-R MMBT1815-x-AE3-R MMBT1815-x-AL3-R MMBT1815-x-AN3-R MMBT1815L-x-AC3-R MMBT1815G transistors marking c4y transistor C4G UTC MMBT1815G transistor C4G sot-23 MMBT1815 MMBT1015 MMBT1815L transistor CE 014 c4g TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR „ * * * * „ FEATURES Collector-Emitter Voltage: BVCEO=50V Collector Current up to 150mA High hFE Linearity Complement to MMBT1015 ORDERING INFORMATION


    Original     		PDF MMBT1815 150mA MMBT1015 MMBT1815L-x-AC3-R MMBT1815G-x-AC3-R MMBT1815L-x-AE3-R MMBT1815G-x-AE3-R MMBT1815L-x-AL3-R MMBT1815G-x-AL3-R MMBT1815L-x-AN3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR „ * * * * FEATURES Collector-Emitter Voltage: BVCEO=50V Collector current up to 150mA High hFE linearity Complement to MMBT1015 Lead-free: MMBT1815L Halogen-free:MMBT1815G


    Original     		PDF MMBT1815 150mA MMBT1015 MMBT1815L MMBT1815G MMBT1815-x-AC3-R MMBT1815-x-AE3-R MMBT1815-x-AL3-R MMBT1815-x-AN3-R MMBT1815L-x-AC3-R

    Untitled

    Abstract: No abstract text available
    Text: CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP ENHANCED SPECIFICATION SURFACE MOUNT SILICON COMPLEMENTARY TRANSISTORS SOT-563 CASE * Device is Halogen Free by design ENHANCED SPECIFICATIONS: ♦ BVCBO from 40V MIN to 60V MIN PNP


    Original     		PDF CMLT3904E CMLT3904EG* CMLT3906E CMLT3906EG* CMLT3946E CMLT3946EG* OT-563 x10-4 CMLT3904E

    c4g TRANSISTOR

    Abstract: CMLT3906EG NPN/PNP transistor transistor C4G CMLT3904E CMLT3906E CMLT3946E marking l04 transistor L46 CMLT3946EG
    Text: CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SOT-563 CASE * Device is Halogen Free by design ENHANCED SPECIFICATIONS: ♦ BVCBO from 40V MIN to 60V MIN PNP


    Original     		PDF CMLT3904E CMLT3904EG* CMLT3906E CMLT3906EG* CMLT3946E CMLT3946EG* OT-563 x10-4 CMLT3904E c4g TRANSISTOR CMLT3906EG NPN/PNP transistor transistor C4G marking l04 transistor L46 CMLT3946EG

    CMLT3906EG

    Abstract: transistor C4G CMLT3904E CMLT3906E CMLT3946E marking L06
    Text: CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP ENHANCED SPECIFICATION COMPLEMENTARY PICOminiTM SILICON TRANSISTORS SOT-563 CASE ENHANCED SPECIFICATIONS: ♦ BVCBO from 40V MIN to 60V MIN PNP ♦ BVEBO from 5.0V MIN to 6.0V MIN (PNP)


    Original     		PDF CMLT3904E CMLT3904EG* CMLT3906E CMLT3906EG* CMLT3946E CMLT3946EG* OT-563 x10-4 CMLT3904E CMLT3906EG transistor C4G marking L06

    Untitled

    Abstract: No abstract text available
    Text: CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SOT-563 CASE * Device is Halogen Free by design ENHANCED SPECIFICATIONS: ♦ BVCBO from 40V MIN to 60V MIN PNP


    Original     		PDF CMLT3904E CMLT3904EG* CMLT3906E CMLT3906EG* CMLT3946E CMLT3946EG* OT-563 x10-4 CMLT3904E

    c4g TRANSISTOR sot323

    Abstract: c4gl MMBT1815G MMBT1015 MMBT1815 C4G sot-23 transistor C4G sot-23 c4g TRANSISTOR
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR „ * * * * „ FEATURES Collector-Emitter Voltage: BVCEO=50V Collector current up to 150mA High hFE linearity Complement to MMBT1015 ORDERING INFORMATION


    Original     		PDF MMBT1815 150mA MMBT1015 MMBT1815-x-AC3-R MMBT1815-x-AE3-R MMBT1815-x-AL3-R MMBT1815-x-AN3-R MMBT1815L-x-AC3-R MMBT1815L-x-AE3-R MMBT1815L-x-AL3-R c4g TRANSISTOR sot323 c4gl MMBT1815G MMBT1015 MMBT1815 C4G sot-23 transistor C4G sot-23 c4g TRANSISTOR

    c4g TRANSISTOR sot323

    Abstract: c4g TRANSISTOR transistor C4G sot-23 transistor C4G free transistor sot723 113 sot TRANSISTOR NPN c4 nf SOT23 MARKING 723CL
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR „ * * * * „ FEATURES Collector-Emitter Voltage: BVCEO=50V Collector Current up to 150mA High hFE Linearity Complement to MMBT1015 ORDERING INFORMATION


    Original     		PDF MMBT1815 150mA MMBT1015 MMBT1815L-x-AC3-R MMBT1815G-x-AC3-R MMBT1815L-x-AE3-R MMBT1815G-x-AE3-R MMBT1815L-x-AL3-R MMBT1815G-x-AL3-R MMBT1815L-x-AN3-R c4g TRANSISTOR sot323 c4g TRANSISTOR transistor C4G sot-23 transistor C4G free transistor sot723 113 sot TRANSISTOR NPN c4 nf SOT23 MARKING 723CL

    2SC2411KGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SC2411KGP SURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. SOT-23 * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(I C=500mA)


    Original     		PDF 2SC2411KGP OT-23) 500mA) 200mW OT-23 2SC2411KGP

    HMBT1815-C4Y

    Abstract: transistors Code c4y HMBT1815 HE6805
    Text: HI-SINCERITY Spec. No. : HE6805 Issued Date : 1992.08.25 Revised Date : 2002.10.25 Page No. : 1/3 MICROELECTRONICS CORP. HMBT1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT1815 is designed for use in driver stage of AF amplifier and general purpose amplification.


    Original     		PDF HE6805 HMBT1815 HMBT1815 OT-23 HMBT1815-C4Y transistors Code c4y HE6805

    AA5M

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING 6V, 50mA 3 FEATURES 1 * Very low output-on resistance (Ron). * Low capacitance. 2 SOT-323 *Pb-free plating product number: 2SC4774L


    Original     		PDF 2SC4774 OT-323 2SC4774L 2SC4774-AL3-6-R 2SC4774L-AL3-6-R QW-R220-017 AA5M

    2SC4774

    Abstract: 2SC4774-AL3-R 2SC4774L-AL3-R c4g TRANSISTOR transistor C4G
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING 6V, 50mA 3 FEATURES * Very low output-on resistance (RON). * Low capacitance. 1 2 SOT-323 *Pb-free plating product number: 2SC4774L ORDERING INFORMATION


    Original     		PDF 2SC4774 OT-323 2SC4774L 2SC4774-AL3-R 2SC4774L-AL3-R QW-R220-017 2SC4774 2SC4774-AL3-R 2SC4774L-AL3-R c4g TRANSISTOR transistor C4G

    HE6805

    Abstract: HMBT1815 transistor C4G sot-23 MARK C4G
    Text: HI-SINCERITY Spec. No. : HE6805 Issued Date : 1992.08.25 Revised Date : 2004.08.13 Page No. : 1/4 MICROELECTRONICS CORP. HMBT1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT1815 is designed for use in driver stage of AF amplifier and general purpose amplification.


    Original     		PDF HE6805 HMBT1815 HMBT1815 OT-23 200oC 183oC 217oC 260oC 245oC HE6805 transistor C4G sot-23 MARK C4G

    2SC2412KPT

    Abstract: nd 16 TRANSISTOR SOT-23
    Text: CHENMKO ENTERPRISE CO.,LTD 2SC2412KPT SURFACE MOUNT General Purpose Transistor VOLTAGE 50 Volts CURRENT 0.15 Ampere APPLICATION * Small Signal Amplifier . FEATURE * Surface mount package. SOT-23 * Low saturation voltage V * Low cob. Cob=2.0pF(Typ.) CONSTRUCTION


    Original     		PDF 2SC2412KPT OT-23) 200mW OT-23 2SC2412KPT nd 16 TRANSISTOR SOT-23

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SC2412KGP SURFACE MOUNT General Purpose Transistor VOLTAGE 50 Volts CURRENT 0.15 Ampere APPLICATION * Small Signal Amplifier . FEATURE * Surface mount package. SOT-23 * Low saturation voltage V CE(sat)=-0.4V(max.)(I C=50mA) * Low cob. Cob=2.0pF(Typ.)


    Original     		PDF 2SC2412KGP OT-23) 200mW OT-23

    NB SOT-23 NPN

    Abstract: ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to


    Original     		PDF CH3904T CHT2222T 2SC4097 CH3904W CHT05 CHT42 CHTA42L CHT44 2SC2411K 2SC2412K NB SOT-23 NPN ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223

    FP5502S6C

    Abstract: FP5502 FP5502s6 sot-23-6 marking MOSFET P SOT-23-6 FP5502SDP marking E1 sot236 sot-23-6 mosfet FITIPOWER SOT-23-6 marking B
    Text: FP5502 fitipower integrated technology lnc. Low-saturation, Low-voltage 1 channels Bi-directional Motor Driver Micro-actuator Driver Description Features FP5502 is a micro-actuator driver IC with miniature packages (STDFN-6 and SOT-23-6). It is one channel low voltage bi-directional motor driver IC.


    Original     		PDF FP5502 FP5502 OT-23-6) 400mA) MO-229-C FP5502-1 6-FEB-2012 OT-23-6 MO-178-C. FP5502S6C FP5502s6 sot-23-6 marking MOSFET P SOT-23-6 FP5502SDP marking E1 sot236 sot-23-6 mosfet FITIPOWER SOT-23-6 marking B