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    C4G TRANSISTOR SOT323 Search Results

    C4G TRANSISTOR SOT323 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C4G TRANSISTOR SOT323 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MMBT1815W NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 Description A L The MMBT1815W is designed for use in driver stage of AF amplifier and general purpose amplification. 3 1 Top View V B S 2 G COLLECTOR


    Original     		PDF MMBT1815W OT-323 MMBT1815W 100mA, 300us, 01-Jun-2002

    MMBT1015

    Abstract: MMBT1815 c4g TRANSISTOR sot323 transistor marking
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR „ * * * * „ FEATURES Collector-Emitter Voltage: BVCEO=50V Collector Current up to 150mA High hFE Linearity Complement to MMBT1015 ORDERING INFORMATION


    Original     		PDF MMBT1815 150mA MMBT1015 MMBT1815-x-AC3-R MMBT1815-x-AE3-R MMBT1815-x-AL3-R MMBT1815-x-AN3-R MMBT1815L-x-AC3-R MMBT1815L-x-AE3-R MMBT1815L-x-AL3-R MMBT1015 MMBT1815 c4g TRANSISTOR sot323 transistor marking

    MMBT1815G

    Abstract: transistors marking c4y transistor C4G UTC MMBT1815G transistor C4G sot-23 MMBT1815 MMBT1015 MMBT1815L transistor CE 014 c4g TRANSISTOR
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR „ FEATURES *Collector-Emitter Voltage: BVCEO=50V *Collector current up to 150mA *High hFE linearity *Complement to MMBT1015 Lead-free: MMBT1815L Halogen-free:MMBT1815G


    Original     		PDF MMBT1815 150mA MMBT1015 MMBT1815L MMBT1815G MMBT1815-x-AC3-R MMBT1815-x-AE3-R MMBT1815-x-AL3-R MMBT1815-x-AN3-R MMBT1815L-x-AC3-R MMBT1815G transistors marking c4y transistor C4G UTC MMBT1815G transistor C4G sot-23 MMBT1815 MMBT1015 MMBT1815L transistor CE 014 c4g TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR „ * * * * „ FEATURES Collector-Emitter Voltage: BVCEO=50V Collector Current up to 150mA High hFE Linearity Complement to MMBT1015 ORDERING INFORMATION


    Original     		PDF MMBT1815 150mA MMBT1015 MMBT1815L-x-AC3-R MMBT1815G-x-AC3-R MMBT1815L-x-AE3-R MMBT1815G-x-AE3-R MMBT1815L-x-AL3-R MMBT1815G-x-AL3-R MMBT1815L-x-AN3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR „ * * * * FEATURES Collector-Emitter Voltage: BVCEO=50V Collector current up to 150mA High hFE linearity Complement to MMBT1015 Lead-free: MMBT1815L Halogen-free:MMBT1815G


    Original     		PDF MMBT1815 150mA MMBT1015 MMBT1815L MMBT1815G MMBT1815-x-AC3-R MMBT1815-x-AE3-R MMBT1815-x-AL3-R MMBT1815-x-AN3-R MMBT1815L-x-AC3-R

    c4g TRANSISTOR sot323

    Abstract: c4g TRANSISTOR transistor C4G sot-23 transistor C4G free transistor sot723 113 sot TRANSISTOR NPN c4 nf SOT23 MARKING 723CL
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR „ * * * * „ FEATURES Collector-Emitter Voltage: BVCEO=50V Collector Current up to 150mA High hFE Linearity Complement to MMBT1015 ORDERING INFORMATION


    Original     		PDF MMBT1815 150mA MMBT1015 MMBT1815L-x-AC3-R MMBT1815G-x-AC3-R MMBT1815L-x-AE3-R MMBT1815G-x-AE3-R MMBT1815L-x-AL3-R MMBT1815G-x-AL3-R MMBT1815L-x-AN3-R c4g TRANSISTOR sot323 c4g TRANSISTOR transistor C4G sot-23 transistor C4G free transistor sot723 113 sot TRANSISTOR NPN c4 nf SOT23 MARKING 723CL

    c4g TRANSISTOR sot323

    Abstract: c4gl MMBT1815G MMBT1015 MMBT1815 C4G sot-23 transistor C4G sot-23 c4g TRANSISTOR
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR „ * * * * „ FEATURES Collector-Emitter Voltage: BVCEO=50V Collector current up to 150mA High hFE linearity Complement to MMBT1015 ORDERING INFORMATION


    Original     		PDF MMBT1815 150mA MMBT1015 MMBT1815-x-AC3-R MMBT1815-x-AE3-R MMBT1815-x-AL3-R MMBT1815-x-AN3-R MMBT1815L-x-AC3-R MMBT1815L-x-AE3-R MMBT1815L-x-AL3-R c4g TRANSISTOR sot323 c4gl MMBT1815G MMBT1015 MMBT1815 C4G sot-23 transistor C4G sot-23 c4g TRANSISTOR

    transistor C4G

    Abstract: c4g TRANSISTOR MMBT1815G MMBT1015 MMBT1815 MMBT1815L transistor C4G sot-23
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR „ * * * * FEATURES Collector-Emitter Voltage: BVCEO=50V Collector current up to 150mA High hFE linearity Complement to MMBT1015 Lead-free: MMBT1815L Halogen-free:MMBT1815G


    Original     		PDF MMBT1815 150mA MMBT1015 MMBT1815L MMBT1815G MMBT1815-x-AC3-R MMBT1815-x-AE3-R MMBT1815-x-AL3-R MMBT1815-x-AN3-R MMBT1815L-x-AC3-R transistor C4G c4g TRANSISTOR MMBT1815G MMBT1015 MMBT1815 MMBT1815L transistor C4G sot-23

    AA5M

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING 6V, 50mA 3 FEATURES 1 * Very low output-on resistance (Ron). * Low capacitance. 2 SOT-323 *Pb-free plating product number: 2SC4774L


    Original     		PDF 2SC4774 OT-323 2SC4774L 2SC4774-AL3-6-R 2SC4774L-AL3-6-R QW-R220-017 AA5M

    2SC4774

    Abstract: 2SC4774-AL3-R 2SC4774L-AL3-R c4g TRANSISTOR transistor C4G
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4774 NPN SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING 6V, 50mA 3 FEATURES * Very low output-on resistance (RON). * Low capacitance. 1 2 SOT-323 *Pb-free plating product number: 2SC4774L ORDERING INFORMATION


    Original     		PDF 2SC4774 OT-323 2SC4774L 2SC4774-AL3-R 2SC4774L-AL3-R QW-R220-017 2SC4774 2SC4774-AL3-R 2SC4774L-AL3-R c4g TRANSISTOR transistor C4G

    transistor smd d9d

    Abstract: smd transistor r5c transistor SMD a10a 4E smd diode smd transistor d9d DC1652A
    Text: DEMO MANUAL DC2064A LTC3300-1/LTC6803-2 Bidirectional Cell Balancer DESCRIPTION Demonstration Circuit DC2064A is a bidirectional cell balancer using two LTC 3300-1 ICs to achieve active cell balancing of up to 12 Li-Ion batteries. The board uses the LTC6803-2 multi-cell addressable battery stack monitor to


    Original     		PDF DC2064A LTC3300-1/LTC6803-2 DC2064A LTC6803-2 LTC3300-1 DC2064A. LTC6803â DC590B transistor smd d9d smd transistor r5c transistor SMD a10a 4E smd diode smd transistor d9d DC1652A