Untitled
Abstract: No abstract text available
Text: FCP380N60 / FCPF380N60 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mΩ Features Description • 650 V @TJ = 150°C SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior
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FCP380N60
FCPF380N60
FCPF380N60
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Untitled
Abstract: No abstract text available
Text: FGA30S120P 1200 V, 30 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode Trench IGBTs offer superior conduction and switching performances for soft switching
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FGA30S120P
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Untitled
Abstract: No abstract text available
Text: FGAF40N60SMD 600 V, 40 A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ = 175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low
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FGAF40N60SMD
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FGH40T100
Abstract: FGH40T100SMD_F155
Text: FGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT Features General Description • High Current Capability Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as UPS, welder and
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FGH40T100SMD
FGH40T100
FGH40T100SMD_F155
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Untitled
Abstract: No abstract text available
Text: FDMS86300DC N-Channel Dual CoolTM PowerTrench MOSFET 80 V, 110 A, 3.1 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package
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FDMS86300DC
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Untitled
Abstract: No abstract text available
Text: FSBB30CH60 Motion SPM 3 Series Features General Description • UL Certified No.E209204 SPMEA-027 Package FSBB30CH60 Is A Motion SPM® 3 Series that Fairchild Has Developed to Provide A Very Compact and High Performance Inverter Solution for AC Motor Drives in
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FSBB30CH60
E209204
SPMEA-027
FSBB30CH60
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Untitled
Abstract: No abstract text available
Text: FSBB30CH60F Motion SPM 3 Series Features General Description • UL Certified No.E209204 SPMEA-027 Package FSBB30CH60F Is A Motion SPM® 3 Series that Fairchild Has Developed to Provide A Very Compact and High Performance Inverter Solution for AC Motor Drives in
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FSBB30CH60F
E209204
SPMEA-027
FSBB30CH60F
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Untitled
Abstract: No abstract text available
Text: FSBB20CH60F Motion SPM 3 Series Features General Description • UL Certified No.E209204 SPMCA-027 Package FSBB20CH60F Is A Motion SPM® 3 Series that Fairchild Has Developed to Provide A Very Compact and High Performance Inverter Solution for AC Motor Drives in
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FSBB20CH60F
E209204
SPMCA-027
FSBB20CH60F
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Untitled
Abstract: No abstract text available
Text: FSBB15CH60F Motion SPM 3 Series Features General Description • UL Certified No.E209204 SPMCA-027 Package FSBB15CH60F Is A Motion SPM® 3 Series that Fairchild Has Developed to Provide A Very Compact and High Performance Inverter Solution for AC Motor Drives
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FSBB15CH60F
E209204
SPMCA-027
FSBB15CH60F
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Untitled
Abstract: No abstract text available
Text: Features General Description • UL Certified No.E209204 SPMBA-027 Package FSBS15CH60F Is A Motion SPM 3 Series that Fairchild Has Developed to Provide A Very Compact and High Performance Inverter Solution for AC Motor Drives in Low-Power Applications Such as Air Conditioners and
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E209204
SPMBA-027
FSBS15CH60F
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Untitled
Abstract: No abstract text available
Text: Features General Description • UL Certified No.E209204 SPMBA-027 Package FSBS15CH60 Is A Motion SPM 3 Series that Fairchild Has Developed to Provide A Very Compact and High Performance Inverter Solution for AC Motor Drives in Low-Power Applications Such as Air Conditioners and
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E209204
SPMBA-027
FSBS15CH60
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Untitled
Abstract: No abstract text available
Text: FSBB20CH60 Motion SPM 3 Series Features General Description • UL Certified No.E209204 SPMCA-027 Package FSBB20CH60 Is A Motion SPM® 3 Series that Fairchild Has Developed to Provide A Very Compact and High Performance Inverter Solution for AC Motor Drives in
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FSBB20CH60
E209204
SPMCA-027
FSBB20CH60
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Untitled
Abstract: No abstract text available
Text: FSBB15CH60 Motion SPM 3 Series Features General Description • UL Certified No.E209204 SPMCA-027 Package FSBB15CH60 Is A Motion SPM® 3 Series that Fairchild Has Developed to Provide A Very Compact and High Performance Inverter Solution for AC Motor Drives in
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FSBB15CH60
E209204
SPMCA-027
FSBB15CH60
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Untitled
Abstract: No abstract text available
Text: FDPF680N10T N-Channel PowerTrench MOSFET 100 V, 12 A, 68 mΩ Features Description • RDS on = 54 mΩ (Typ.) @ VGS = 10 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
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FDPF680N10T
O-220F
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Untitled
Abstract: No abstract text available
Text: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2511NZ
FDW2511NZ
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2511NZ
Abstract: FDW2511NZ dual mosfet tt 6 pin Diode N7 S2 2511N 6 pin diode n10
Text: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2511NZ
FDW2511NZ
2511NZ
dual mosfet tt 6 pin
Diode N7 S2
2511N
6 pin diode n10
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C4468
Abstract: FDZ299P
Text: FDZ299P P-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ299P minimizes both PCB space and RDS ON . This BGA MOSFET embodies a
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FDZ299P
FDZ299P
C4468
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FDZ2554P
Abstract: No abstract text available
Text: FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554P minimizes both PCB space
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FDZ2554P
FDZ2554P
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Untitled
Abstract: No abstract text available
Text: FCP260N60E / FCPF260N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 15 A, 260 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing
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FCP260N60E
FCPF260N60E
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Untitled
Abstract: No abstract text available
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
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2601NZ
Abstract: FDW2601NZ 2601N
Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
FDW2601NZ
2601NZ
2601N
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n mosfet pspice parameters
Abstract: FDW2512NZ 2512nz
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
n mosfet pspice parameters
2512nz
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5e8 marking
Abstract: 66E-3
Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
FDW2601NZ
5e8 marking
66E-3
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FGA40N65
Abstract: No abstract text available
Text: FGA40N65SMD 650 V, 40 A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS
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FGA40N65SMD
175oC
FGA40N65
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