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    C5750X7S2A106M230KB Price and Stock

    TDK Corporation C5750X7S2A106M230KB

    Multilayer Ceramic Capacitor, 10 uF, 100 V, ? 20%, X7S, 2220 [5750 Metric] - Tape and Reel (Alt: C5750X7S2A106M230KB)
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    Avnet Americas C5750X7S2A106M230KB Reel 500 36 Weeks 500
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    Mouser Electronics C5750X7S2A106M230KB 33,846
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    Arrow Electronics C5750X7S2A106M230KB Cut Strips 8 36 Weeks 8
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    C5750X7S2A106M230KB 345 3
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    Quest Components C5750X7S2A106M230KB 1,040
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    C5750X7S2A106M230KB 397
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    C5750X7S2A106M230KB 276
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    C5750X7S2A106M230KB 20
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    TTI C5750X7S2A106M230KB Reel 108,000 500
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    Chip 1 Exchange C5750X7S2A106M230KB 25,233
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    Avnet Abacus C5750X7S2A106M230KB Reel 45,500 41 Weeks 500
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    Chip-Germany GmbH C5750X7S2A106M230KB 33
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    Component Electronics, Inc C5750X7S2A106M230KB 10
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    TDK Corporation C5750X7S2A106M

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 2220 10uF 100volts X7S 20%
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    TTI C5750X7S2A106M Cut Tape 2,910 10
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    C5750X7S2A106M230KB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C5750X7S2A106M230KB TDK Ceramic Capacitors, Capacitors, CAP CER 10UF 100V 20% X7S 5750 Original PDF

    C5750X7S2A106M230KB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


    Original     		MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability


    Original     		AFT09S200W02N 716lidated AFT09S200W02NR3 AFT09S200W02GNR3 PDF

    C3216X7R2J472M115AA

    Abstract: C3225X7S2A475K200AB C4532X7T2J224M200KC C2012X7T2V103K C4532JB2E334M C3225C0G2J682J200AA C4532X7T2J304M c3216c0g C3225C0G2A223J160AA c5750x7s2a156m250kb
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Mid Voltage 100 to 630V Capacitors Type: Issue date: C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] January 2013 TDK MLCC Global Catalog


    Original     		C1005 CC0402] C1608 CC0603] C2012 CC0805] C3216 CC1206] C3225 CC1210] C3216X7R2J472M115AA C3225X7S2A475K200AB C4532X7T2J224M200KC C2012X7T2V103K C4532JB2E334M C3225C0G2J682J200AA C4532X7T2J304M c3216c0g C3225C0G2A223J160AA c5750x7s2a156m250kb PDF

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade Mid Voltage 100 to 630V Type: C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: Oct 2013 004-01 / 20131003 / mlcc_commercial_midvoltage_en


    Original     		C1005 CC0402] C1608 CC0603] C2012 CC0805] C3216 CC1206] C3225 CC1210] PDF

    MOSFET J162

    Abstract: CW12010T0050G
    Text: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 1, 11/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to


    Original     		AFT26H160--4S4 AFT26H160-4S4R3 MOSFET J162 CW12010T0050G PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1020-04N Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range


    Original     		MMRF1020--04N MMRF1020-04NR3 MMRF1020-04GNR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 0, 7/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		AFT26H160--4S4 AFT26H160-4S4R3 PDF

    Transistor J550

    Abstract: j584 transistor
    Text: Document Number: AFT26H200W03S Rev. 0, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		AFT26H200W03S AFT26H200W03SR6 Transistor J550 j584 transistor PDF

    j295

    Abstract: SEMICONDUCTOR J598 J585 843 j122 GRM31B j338 j0606
    Text: Document Number: MD7IC2012N Rev. 0, 4/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2012N wideband integrated circuit is designed with on−chip matching that makes it usable from 1805 to 2170 MHz. This multi−stage


    Original     		MD7IC2012N MD7IC2012NR1 MD7IC2012GNR1 j295 SEMICONDUCTOR J598 J585 843 j122 GRM31B j338 j0606 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S240-12S Rev. 0, 4/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 55 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.


    Original     		AFT21S240--12S AFT21S240-12SR3 PDF

    RR1220P-102-D

    Abstract: D58764 HSF-141C-35
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 1, 7/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR


    Original     		MRFE6VP5150N MRFE6VP5150NR1 MRFE6VP5150GNR1 MRFE6VP5150NR1 RR1220P-102-D D58764 HSF-141C-35 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1316N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR military, aerospace and defense, radar and radio communications applications. It is an


    Original     		MMRF1316N MMRF1316NR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 1, 6/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR


    Original     		MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1 PDF

    WELWYN c21

    Abstract: No abstract text available
    Text: Document Number: AFT26HW050S Rev. 1, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous


    Original     		AFT26HW050S AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3 6/2013Semiconductor, WELWYN c21 PDF

    6 pin SMD MARKING CODE FW

    Abstract: No abstract text available
    Text: MCP16331 High-Voltage Input Integrated Switch Step-Down Regulator Features: General Description: • • • • • The MCP16331 is a highly integrated, high-efficiency, fixed frequency, step-down DC-DC converter in a popular 6-pin SOT-23 or 8-pin TDFN 2x3 package that


    Original     		MCP16331 MCP16331 OT-23 6 pin SMD MARKING CODE FW PDF

    HSF-141C-35

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 0, 5/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR


    Original     		MRFE6VP5150N MRFE6VP5150NR1 MRFE6VP5150GNR1 MRFE6VP5150NR1 5/2014Semiconductor, HSF-141C-35 PDF

    ATC100B4R3CW500X

    Abstract: PTVA035002EV V1
    Text: PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down


    Original     		PTVA035002EV PTVA035002EV a035002 ATC100B4R3CW500X PTVA035002EV V1 PDF

    SMD Marking Code Microchip

    Abstract: No abstract text available
    Text: MCP16331 High-Voltage Input Integrated Switch Step-Down Regulator Features: General Description: • • • • • • The MCP16331 is a highly integrated, high-efficiency, fixed frequency, step-down DC-DC converter in a popular 6-pin SOT-23 or 8-pin TDFN 2x3 package that


    Original     		MCP16331 MCP16331 OT-23 SMD Marking Code Microchip PDF

    WELWYN c21

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT26HW050S Rev. 2, 7/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous


    Original     		AFT26HW050S AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3 7/2013Semiconductor, WELWYN c21 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MD8IC925N Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on−chip matching that makes it usable from 728 to 960 MHz. This multi−stage


    Original     		MD8IC925N MD8IC925N MD8IC925NR1 MD8IC925GNR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade Mid Voltage 100 to 630V Type: C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: Jan 2014 005-01 / 20140112 / mlcc_commercial_midvoltage_en


    Original     		C1005 CC0402] C1608 CC0603] C2012 CC0805] C3216 CC1206] C3225 CC1210] PDF

    transistor j241

    Abstract: j241 J241 transistor
    Text: Document Number: A2T07H310-24S Rev. 0, 6/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 47 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to


    Original     		A2T07H310--24S A2T07H310-24SR6 transistor j241 j241 J241 transistor PDF

    81A7031-50-5F

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: A2T07D160W04S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth


    Original     		A2T07D160W04S A2T07D160W04SR3 81A7031-50-5F PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFV09P350-04N Rev. 0, 1/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of


    Original     		AFV09P350--04N AFV09P350-04NR3 AFV09P350-04GNR3 PDF