Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    C5884 TRANSISTOR Search Results

    C5884 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C5884 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C5884

    Abstract: TO220H TO-220H c5884 transistor Diode 302 2SC5884 eht in tv
    Text: Power Transistors 2SC5884 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV • Features Rating Unit Collector-base voltage Emitter open VCBO 1 500 V Collector-emitter voltage (E-B short) VCES 1 500 V Emitter-base voltage (Collector open)


    Original     		PDF 2SC5884 C5884 TO220H TO-220H c5884 transistor Diode 302 2SC5884 eht in tv

    c5884

    Abstract: TO220H 2SC5884 TO-220H
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5884 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV 3.0±0.2 Unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/ d 9.9±0.3 • Features φ3.2±0.1


    Original     		PDF 2002/95/EC) 2SC5884 c5884 TO220H 2SC5884 TO-220H