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    Eaton Bussmann KBC-70I

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    DigiKey KBC-70I Bulk 5
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    Newark KBC-70I Bulk 5
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    RS KBC-70I Bulk 26 Weeks 5
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    Sager KBC-70I 5
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    Eaton Corporation KBC-70I

    INDICATING FUSE - Bulk (Alt: KBC-70I)
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    Avnet Americas KBC-70I Bulk 5
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    Mouser Electronics KBC-70I
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    Zebra Technologies BTRY-VC70IAB00

    SPARE BATTERY KIT VC70
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    NAC BTRY-VC70IAB00 1
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    C70I Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P55i

    Abstract: HY29F040A P12-I
    Text: HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements · High performance - 55 ns access time · Compatible with JEDEC-Standard Commands


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    PDF HY29F040A P-90I, C-90I, T-90I, R-90I P-90E, C-90E, T-90E, R-90E 120ns P55i P12-I

    HY29F002

    Abstract: 29F002T hyundai tv hy 22 f circuit 29F002 HY29F002T PDIP32 PLCC32 TSOP32 hyundai tv circuits P55i
    Text: HY29F002 2 Megabit 256K x 16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current


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    PDF HY29F002 S-128 HY29F002 29F002T hyundai tv hy 22 f circuit 29F002 HY29F002T PDIP32 PLCC32 TSOP32 hyundai tv circuits P55i

    Untitled

    Abstract: No abstract text available
    Text: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current


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    PDF HY29F040A r-61400755 S-128

    29F040A

    Abstract: hyundai HY29F040A 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits HY29F040AT
    Text: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current


    Original
    PDF HY29F040A S-128 29F040A hyundai HY29F040A 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits HY29F040AT

    hyundai HY29F040A

    Abstract: 29f040a 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits
    Text: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current


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    PDF HY29F040A S-128 hyundai HY29F040A 29f040a 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits

    SCR 2000V 1000A

    Abstract: GE-SPCO C702 cycloconverters Thyristor ys 150 C702CA C701PN oms 450 thyristor YS Thyristor SCR C701L
    Text: N l û E CO/ STATIC PUR CMPNT 3ME » 3074504 GDDG1G3 1 • ù E S P High Power 53m m Silicon Controlled Rsctifier GE-SPCO S ta tic Pntoer C nm nonent O peration fifnlnem .P A USA 1000 A Avg. Up To 3200 Volts "7\W\*| PG 6.052 9/1/88 [ C7 Q2 A M P L IF Y IN G G A T E


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    PDF RS-397 SCR 2000V 1000A GE-SPCO C702 cycloconverters Thyristor ys 150 C702CA C701PN oms 450 thyristor YS Thyristor SCR C701L

    Untitled

    Abstract: No abstract text available
    Text: Ceramic Disc Capacitors - CCD/TCA/TCD/TCL/TCP/TCO/TCV GENERAL SPECIFICATIONS Arco Ceramic Disc Capacitors are designed for applications requiring high capacitance and low power factors from 12 to 1000 volts. All units are coated with a rugged “Durez” coating and are available in a variety of


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    PDF N3300

    P55i

    Abstract: No abstract text available
    Text: •«}] Y U N D A l HY29F002 Series 256K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements Compatible with JEDEC-Standard Comm ands - Uses software comm ands, pinouts, and


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    PDF HY29F002 32-Pin HY29F002 P55i

    1.25 wire to board

    Abstract: BY95 JC2000
    Text: S D - 5 3 7 8 0 " * * 10 NOTES 0 = 1=25 C t^ T " DWG. NO. " 5 146 S • u-^c MATES WITH : SERIES 3 film iH 1 51146 (P IT C H 4 S n n iii-b (3 ¿19 ^^)a LOCKING WINDOW :ONE PLACE FOR 2 AND 3 CIRCUIT PRODUCTS AND TWO PLACES FOR WORE THAN 3 CIRCUIT PRODUCTS.


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    PDF 05MAX. 20SUTrofflSÂ 15MAX. UL94V-0 JC2000-0 JC70I59) IC6054I) 9T/I/27 SD-53780-Â 1.25 wire to board BY95 JC2000

    KDS 9E

    Abstract: l0225 C67078-A1307-A3 KDS 7B KDS 1M ksd 202 transistor buz 36 KDS 7c C67078-S1302-A2 transistor buz 293
    Text: V^ll~ IVIV^vJ D l 17 on £ m \J a ir ia i* T rD WVVCI M C IM O I9 1 V I UUC. 9 ini c n a n n e i • Enhancement mode VPT05381 Type VDS Id BUZ 20 100 V 13,5 A •^DS on 0,2 Q Package 1> Ordering Code TO-220 AB C67078-S1302-A2 M a v jm n m P a tjn g e Parameter


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    PDF O-220 C67078-S1302-A2 SIL03609 SILQ3610 SIL03611 SIL03612 KDS 9E l0225 C67078-A1307-A3 KDS 7B KDS 1M ksd 202 transistor buz 36 KDS 7c C67078-S1302-A2 transistor buz 293

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I HY29F002 Series 256K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements Com patible with JEDEC-Standard Comm ands - Uses softw are com m ands, pinouts, and


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    PDF HY29F002 16Kbytes, P-55I, C-55I, T-551, R-55I P-55E, C-55E, T-55E, R-55E