ba 3161
Abstract: da1125 3771 E1 561a1
Text: 23456781 9ABC1DEFACB14CCE1199D1 99D512E1B1F !EE1 "A#1$EB1 1 1 1 1 EEBC19E#%!1 &EBAE#1 / 61 28D0C1 31 1 171 562751 49577651 16329611 &51 21 89*172615926+1DA911091 )32)1 *6611 31 65.3939A1 81 &&651 1 3.*761 7-%41
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BC19E#
B31613
D0C14
53V611&
ba 3161
da1125
3771 E1
561a1
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MIL-STD-750
Abstract: MIL-STD-750 2072
Text: Microsemi m m m Santa Ana, CA m P fogress Powered b y Tûùhtiùiûÿy MX043J MX043G 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Features Harris FSC260R die total dose : 100 kRAD(Si) w ithin pre-radiation param eter lim its
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MX043J
MX043G
FSC260R
1012RAD
MX043J)
MX043G)
1042B
MIL-STD-750
MIL-STD-750
MIL-STD-750 2072
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Untitled
Abstract: No abstract text available
Text: m m m Santa Ana, CA M i c n o m s e m MX043J MX043G 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 i Pmgress Pawtted by Teclmoiagy Features Harris FSC260R die total dose: 100 kRAD(Si) w ithin pre-radiation param eter lim its
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MX043J
MX043G
FSC260R
MX043J)
MIL-STD-750
1042B
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: 9 UNITED MICROELECTRONICS 3QE • T32SASS DDQ02S7 M ■ T ~ *±5 T - ^ - /5 - U M 3217 6-Digit Muitifunction Watch ■ Single 1.5 volt battery operation ■ 3 2 7 6 8 H z quartz crystal tim e base § I ■ 6-digit LCD w ith 7-day m ark, A M /P M m ark, date m ark,
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T32SASS
DDQ02S7
UM3217H
12-hour
UM3219AH/GH
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str 5707
Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
str 5707
2SC 8050
scr ky 202
TRANSISTOR J 5804 NPN
str 6709
TRANSISTOR J 5804
2sc 8188
lr 2905 transistor
2sc 8187
2SD 5703
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T 1829-1 transistor
Abstract: No abstract text available
Text: AVANTEK O a INC v a MME D n t e B l l H l i b b OOOflDàl 5 S A V A UTG/UTC/PPA 2012 Series Thin-FIIm Cascadable Amplifier 500 to 2000 MHz k T FEATURES APPLICATIONS • Frequency Range: 500 to 2000 MHz • High Dynamic Range • Noise Figure: 3.0 dB Typ
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ierc heatsink
Abstract: motorola bridge rectifier mda diode bridge 3510 MDA3500 309A-02 motorola bridge rectifier MR2500 diode bridge 3506 diode bridge 3504
Text: 12E MOTOROLA SC -CDIODES/OPTOÏ D g b3fc.72SS D t m t i f l S 1 | rr-3t3-ö7 MOTOROLA MDA3500 Seríes SEM ICONDUCTOR TECHNICAL DATA RECTIFIER ASSEMBLY . . . utilizing individual void-free molded MR2500 Series rectifiers, interconnected and mounted on an electrically isolated aluminum
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MR2500
ierc heatsink
motorola bridge rectifier mda
diode bridge 3510
MDA3500
309A-02
motorola bridge rectifier
diode bridge 3506
diode bridge 3504
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T 1829-1
Abstract: ca 3161 e IC
Text: Q UTO/UTC/PPA 2012 Series Thin-Film Cascadable Amplifier 500 to 2000 MHz avan tek FEATURES APPLICATIONS • Frequency Range: 500 to 2000 MHz • High Dynamic Range • Noise Figure: 3.0 dB Typ • GaAs FET Technology • Temperature Compensated • Surface Mount Option
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ba 3161
Abstract: Nam Tai Electronics Syntek Semiconductor 1261 ELEKTRONIK BAUELEMENTE
Text: LG Semicon SALES NETWORK OVERSEAS SUBSIDIARIES & OFFICES U.S.A LG Semicon America, inc. 3003 North First Street San Jose, CA 95134-2004 Tel : 1 408-432-5000 Fax : (1)408-432-6067 LGSA Raleigh Office 5511 Capital Center Drive, Suite 430, Raleigh, N C 27606
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181MICONDUCTOR
SF-33720
ba 3161
Nam Tai Electronics
Syntek Semiconductor 1261
ELEKTRONIK BAUELEMENTE
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ca 3161 e IC
Abstract: CNF4
Text: F100180 High-Speed 6-Bit Adder FAIRCHILD A Schlum berger Com pany F100K E C L P ro d u c t C onnection Diagram s D escription T h e F100180 is a h ig h -s p e e d 6 -b it a d d e r c a p a b le o f p e rfo rm in g a fu ll 6 -b it a d d itio n o f tw o o p e ra n d s . In p u ts
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F100180
F100K
F100179
F100180
ca 3161 e IC
CNF4
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MTCR
Abstract: No abstract text available
Text: M IC R O N 2 MEG MT16D232 32, 4 MEG x 16 DRAM MODULE X 2 MEG X 32, 4 MEG X 16 DRAM MODULE FAST PAGE MODE MT16D232 LOW POWER, EXTENDED REFRESH (MT16D232 L) FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CM OS silicon-gate process.
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MT16D232
72-pin
024-cycle
128ms
MT16D232)
MTCR
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Untitled
Abstract: No abstract text available
Text: CAT59C11A CAT59C11A Preliminary IK B IT SE R IA L E 2PR O M DESCRIPTION FEATURES The C A T59C 11A is a 1K bit Serial E2PROM memory device organized in 64 registers of 16 bits or 128 registers of 8 bits each. Each register can be written or read serially by using the Dl (or DO) pin.
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CAT59C11A
CAT59C11A
CAT33C201)
CAT59C
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sem 3040
Abstract: 44022 ee ca 3161 e IC
Text: SALES NETWORK LG Semicon OVERSEAS SUBSIDIARIES & OFFICES U.S.A LG Semicon America, Inc. 3003 North First Street San Jose, CA 95134-2004 Tel : 1 408-432-5000 Fax : (1)408-432-6067 LGSA Raleigh Office 5511 Capital Center Drive, Suite 430, Raleigh, NC 27606
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SF-33720
sem 3040
44022 ee
ca 3161 e IC
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PDF
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T8514
Abstract: L82-60 P9342
Text: PICO’S These units can be m anufactured an d tested to MIL-T-27/357. C ontact factory for price an d delivery inform ation an d appropriate p a rt num bers M IL-T-271357-01 thru M IL-T-271357-114 . s u r,a e * L S E R IE S PICO PART NUMBER P lu g -In “ I (- 1I .35V M
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MIL-T-27/357.
IL-T-271357-01
IL-T-271357-114)
L-8203
L-8210
L-8215
L-8218
L-8220
L-8225
L-8228
T8514
L82-60
P9342
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LP2951
Abstract: LP2950C-5 TO-226-AA LP29S0 P2951 LP2951CX
Text: g MOTOROLA LP2950 LP2951 M icropower Voltage Regulators The LP2950 and LP2951 are m icropower voltage regulators that are specifically designed to maintain proper regulation with an extremely low in p u t-to -o u tp u t voltage differential. These devices feature a very low
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LP2950
LP2951
h3b7253
LP2950C-5
TO-226-AA
LP29S0
P2951
LP2951CX
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PDF
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2SD 4206
Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
AMS-127B
2SD 4206
str 5707
ky 201 thyristor
scr ky 202
2SD 4206 npn
gi 9444 diode
TRANSISTOR SMD 9014
2SD 5703
STR 6757
TRANSISTOR SMD DK QC
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TRANSISTOR SMD 613
Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
AMS-127B
TRANSISTOR SMD 613
TRANSISTOR SMD DK QC
transistor SMD DK -RN
Sanken Schottky Diode Mi 15
spx 3955
SANKEN power supply
diode zener smd sg 64
transistor SMD DK qs
301 miniature smd transistor
KY smd transistor
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Untitled
Abstract: No abstract text available
Text: BiMOS U 20-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS W ITH ACTIVE-DMOS PULL-DOWNS T he U C N 5812A F /E P F com bine a 2 0 -b it C M O S sh ift register, data latches, and control circuitry with high-voltage b ip o la r source drivers and active DM GS pull-dow ns fo r reduced su pply cu rre n t requirem ents.
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20-BIT
812A/EP
5812E
05D433A
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Untitled
Abstract: No abstract text available
Text: STI361000A 72-PIN SIMMS 1 M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI361000A is a 1M bits x 36 Dynamic RAM high density memory module. The Simple Technology STI361000A consist of two CMOS 1M x 16 DRAMs in 42-pin
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STI361000A
72-PIN
STI361000A
42-pin
20-pin
STI361
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mt4c1024d
Abstract: No abstract text available
Text: M ICRO N 2 MEG MT24D236 36, 4 MEG x 18 DRAM MODULE X DRAM 2 MEG x 36, 4 MEG x 18 _ _^ FAST PAGE MODE MT24D236 LOW POWER, EXTENDED REFRESH (MT24D236 L) MODULE m _ V U . _ _ U b L i FEATURES • Industry-standard pinout in a 72-pin single-in-line package
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MT24D236
72-pin
024-cycle
128ms
MT24D236)
mt4c1024d
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C2402
Abstract: iw 1688 KT 8030 ic 8287 Class 5.6 C1535
Text: DESC. ITEM O ’TY TREATMENT MATERIAL HOUSING GLASS-FILLED THERMOPLASTIC UL 94V-f CONTACT METAL HOLD-DOWN SEE POS.NO. COPPER ALLOY SEE REMARK STAINLESS STEEL REMARK MOLDED BROWN 100u"MIN. TIN/LEAD AT TAIL OVER 50u" NICKEL OVERALL._ NONE REMARK: 1. PROD. NO.:
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HC972249
C2402
iw 1688
KT 8030
ic 8287
Class 5.6
C1535
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PDF
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8390s
Abstract: c3164 diode 251d 25S16 251d diode
Text: S S S-THOUSON 07E I> | 7151237 Q01k2g5 t I LOW POWER SCHOTTKY INTEGRATED CIRCUITS 67C 16351 T -6 1 -2 1 -5 3 8-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS DESCRIPTION The TTL/MSIT54LS251/T74LS251 is a high speed 8-Input Digital Multiplexer.' It provides, in one pac
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Q01k2g5
TTL/MSIT54LS251/T74LS251
LS251
T54LS251
T74LS251
8390s
c3164
diode 251d
25S16
251d diode
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PDF
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Untitled
Abstract: No abstract text available
Text: H M -8 8 1 6 H -8 £ H A R R I S 16 K x 8 High Speed Asynchronous June 1989 CMOS Static RAM Module P in o u t Features T O P V IE W • Low Standby Supply C urrent . 8 0 0 jjA • Low Operating Supply C u rre n t. 400m A
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tp5n40
Abstract: Motorola transistor 388 TO-204AA TIC 160 D M30TR TP5N40E
Text: b3b725H DDTflSSS HIT bflE D MOTOROLA SC XSTRS/R F MOTOROLA inOTb • SEMICONDUCTOR TECHNICAL DATA MTM5N40 *MTP5N40E Designer's Data Sheet •M otorola Preferred Device Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FETs
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b3b725H
O-204AA)
97A-01
97A-03
-fUO-30(
97A-03
O-204AE)
tp5n40
Motorola transistor 388 TO-204AA
TIC 160 D
M30TR
TP5N40E
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