CAP 0805 ATC 600F
Abstract: ATC 600F 600F
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
|
Original
|
PDF
|
|
CAP 0805 ATC 600F
Abstract: DK0033 ATC 600F DK0032 DK0034 u1560 MIL-PRF-123 RO4350 CERAMICS CAPACITORS 0402 0805 NPO
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marked • High Self Resonance Frequencies Applications: • Cellular Base Station Equipment
|
Original
|
PDF
|
|
case marking y9
Abstract: No abstract text available
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
|
Original
|
PDF
|
|
ATC 600F
Abstract: No abstract text available
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
|
Original
|
PDF
|
|
CAP 0805 ATC 600F
Abstract: No abstract text available
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
|
Original
|
PDF
|
|
CAP 0805 ATC 600F
Abstract: ATC 600F DK0033T DK0034T diode MARKING CODE A9 DK0035T 250v 104 K capacitor DK00 DK0032T EIA J code marking
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
|
Original
|
PDF
|
|
CAP 0805 ATC 600F
Abstract: No abstract text available
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
|
Original
|
PDF
|
|
CAP 0805 ATC 600F
Abstract: No abstract text available
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:
|
Original
|
PDF
|
|
ATC 600F
Abstract: DK0032
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marked Optional • High Self Resonance Frequencies Applications: • Cellular Base Station Equipment
|
Original
|
PDF
|
|
DK0032
Abstract: DK0034 capacitor 6r8 ATC 600F DK0033
Text: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marked Optional • High Self Resonance Frequencies Applications: • Cellular Base Station Equipment
|
Original
|
PDF
|
|
|
|
CAP 0805 ATC 600F
Abstract: chip resistor 1206 CW-37 American Technical Ceramics GaAs FET chip GRM39Y5V104Z25V murata cw
Text: TC2997D REV3_20050418 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs PHOTO ENLARGEMENT FEATURES • 20W Typical Power at 2.45 GHz • 10dB Typical Linear Power Gain at 2.45 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %
|
Original
|
PDF
|
TC2997D
TC2997D
GRM39COG0R75C50V
GRM39COG2RC50V
GRM39COG1R2C50V
GRM39X7R102K50V
GRM39Y5V104Z25V
GRM42-6Y5V106Z25V
GRM31CF5E106ZA01L)
250WVDC)
CAP 0805 ATC 600F
chip resistor 1206
CW-37
American Technical Ceramics
GaAs FET chip
GRM39Y5V104Z25V
murata cw
|
Untitled
Abstract: No abstract text available
Text: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar
|
Original
|
PDF
|
CGHV14500
CGHV14500
CGHV14
|
Untitled
Abstract: No abstract text available
Text: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar
|
Original
|
PDF
|
CGHV14500
CGHV14500
CGHV14
|
Untitled
Abstract: No abstract text available
Text: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar
|
Original
|
PDF
|
CGHV14500
CGHV14500
CGHV14
|
Untitled
Abstract: No abstract text available
Text: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar
|
Original
|
PDF
|
CGHV14250
CGHV14250
CGHV14
350anning,
|
Untitled
Abstract: No abstract text available
Text: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar
|
Original
|
PDF
|
CGHV14250
CGHV14250
CGHV14
|
diode 400V 1A SOD-123
Abstract: 10uF CAPACITOR 1210 PACKAGE GRM39Y5V104Z25V RO4003 600F0R GRM42-6Y5V106Z25V cap 0805 RF capacitor
Text: TC3741 REV0_20070111 9.5 – 10.5 GHz 2W Single Bias MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 33 dBm ! Small Signal Gain: 11 dB ! Power Added Efficiency: 25 % ! IP3: 42 dBm ! Input/Output 50 Ω Match ! Bias condition: 1100 mA @ 10 V DESCRIPTION The TC3741 is a 2-stage PHEMT Single Bias MMIC power amplifier. It is designed for use in low cost and high
|
Original
|
PDF
|
TC3741
TC3741
1000PF
600F0R7BT
600F1R0BT
GRM39X7R102K50V
GRM39Y5V104Z25V
GRM42-6Y5V106Z25V
GRM31CF5E106ZA01L
OD-123)
diode 400V 1A SOD-123
10uF CAPACITOR 1210 PACKAGE
GRM39Y5V104Z25V
RO4003
600F0R
cap 0805
RF capacitor
|
cgh40120
Abstract: CGH4012 CAP 0805 ATC 600F 0805 SMD resistors derating L-14C6N8ST cgh401 CGH40120P transistor SMD 3906
Text: CGH40120P 120 W, RF Power GaN HEMT Cree’s CGH40120P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
|
Original
|
PDF
|
CGH40120P
CGH40120P
CGH40120P,
CGH4012
cgh40120
CAP 0805 ATC 600F
0805 SMD resistors derating
L-14C6N8ST
cgh401
transistor SMD 3906
|
Untitled
Abstract: No abstract text available
Text: CGH40120P 120 W, RF Power GaN HEMT Cree’s CGH40120P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
|
Original
|
PDF
|
CGH40120P
CGH40120P
CGH40120P,
CGH4012
|
Untitled
Abstract: No abstract text available
Text: CGH40120P 120 W, RF Power GaN HEMT Cree’s CGH40120P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
|
Original
|
PDF
|
CGH40120P
CGH40120P
CGH40120P,
CGH4012
|
