CAP TAJA Search Results

CAP TAJA Result Highlights (5)

Part	Manufacturer	Description
NFM15PC755R0G3D	Murata Manufacturing Co Ltd	Feed Through Capacitor,
NFM15PC435R0G3D	Murata Manufacturing Co Ltd	Feed Through Capacitor,
NFM15PC915R0G3D	Murata Manufacturing Co Ltd	Feed Through Capacitor,
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
DE6B3KJ151KA4BE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive

CAP TAJA Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
VCO19V Abstract: VCO19V-XXXXT VCO190-1843T horizantal DIODE 1N4001 SMD HMC313 VCO-19V smd SOT26 ADP3331ART SMD 0 OHMS resistors 0603 X7R Text: Wednesday 9 November, 2005/POrrell Evaluation Board Tech Note Evaluation Board For Fractional-N PLL Frequency Synthesizer EVAL-ADF4193EB1 FEATURES GENERAL DESCRIPTION Self-Contained Board Including Synthesizer, VCO and Loop Filter Designed For GSM Application:	Original	2005/POrrell EVAL-ADF4193EB1 1805-1880MHz ADF4193 84GHz VCO19V VCO19V-XXXXT VCO190-1843T horizantal DIODE 1N4001 SMD HMC313 VCO-19V smd SOT26 ADP3331ART SMD 0 OHMS resistors 0603 X7R	PDF
AD-009 Abstract: ad009 NPTB00004 12101C105KAT2A ATC600F330B smd cap Cer cap 100uf ERJ-6BWJR033W AD009 smd CAP 27pf 100v 1 0603 Text: AD-009 AD-009: Nitronex NPTB00004 GaN HEMT Tuned for 2.5 to 2.7GHz Driver Applications Application board AD-009 with a Nitronex NPTB00004 GaN HEMT device outputs approximately 29dBm of average RF power under single carrier OFDM WiMAX modulation1 and approximately 12.5dB gain with 22% drain efficiency at 2.5% EVM	Original	AD-009 AD-009: NPTB00004 AD-009 29dBm 150mA. 150ma ad009 12101C105KAT2A ATC600F330B smd cap Cer cap 100uf ERJ-6BWJR033W AD009 smd CAP 27pf 100v 1 0603	PDF
ATC 600F Abstract: NPTB00004 AD-016 100uf 16v murata tantalum GRM188R72A104KA35D 490-3285-2-ND ERJ2GE0R00X P033A 06031C103KAT2A Cer cap 100uf Text: AD-016 AD-016 Nitronex NPTB00004 GaN HEMT Power Transistors Application Board Tuned for 5.7 to 5.8GHz Application design AD-016 with a Nitronex NPTB00004 GaN HEMT device has approximately 27dBm average RF power under single carrier OFDM WiMax modulation1 and approximately 10dB gain with 23% drain efficiency at 2.5% EVM	Original	AD-016 AD-016 NPTB00004 27dBm 150mA. 100ma AD-016: ATC 600F 100uf 16v murata tantalum GRM188R72A104KA35D 490-3285-2-ND ERJ2GE0R00X P033A 06031C103KAT2A Cer cap 100uf	PDF
R2532 Abstract: MEC8-150-02-L-D-EM2 CR16-4751FM r-2532 philips cr16 Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 890B FastDAACS Item 1 2 3 Qty 3 Reference C80,C81,C89 C94 Opt C88 (Opt) 4 1 C88 5 6 1 9 7 8 9 10 1 5 1 15 11 43 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 1 5 1 1 1 3 9 1 2 2 1 1 1 C36 C1,C2,C32,C35,C38,C76,C78,	Original	C27-31 C13-26 C45-50 C54-56, C63-75 470uF POL10-1CS6 LTC4300A-1CMS8 LTC4410ES6 R2532 MEC8-150-02-L-D-EM2 CR16-4751FM r-2532 philips cr16	PDF
ATC 600F Abstract: NPTB00004 transistors ND C9 GRM188R72A104KA35D ERJ2GE0R00X 01UF 100UF 10UF AD-015 Nitron Text: AD-015 AD-015 Nitronex NPTB00004 GaN HEMT Power Transistors Application Board Tuned for 5.1 to 5.2GHz Application design AD-015 with a Nitronex NPTB00004 GaN HEMT device has approximately 29dBm average RF power under single carrier OFDM WiMax modulation1 and approximately 11dB gain with 23% drain efficiency at 2.5% EVM	Original	AD-015 AD-015 NPTB00004 29dBm 150mA. 100ma AD-015: ATC 600F transistors ND C9 GRM188R72A104KA35D ERJ2GE0R00X 01UF 100UF 10UF Nitron	PDF
U20 diode sm Abstract: C181-C187 C69 diode sm RMC 0805 1.2M C159C Motorola R97 P13B3125Q PTC111 IC 93c46 bcr beckman resistor Text: 0700F _BoM Location QTY Part Descripition U21 IC/SM 74LVC04AD SOIC14 3.3V 1 U4 IC/SM 74LVC08 3.3V TSSOP-14 2 U22 IC/SM 74LVC14 3.3V TSSOP-14 1 U7,U8 IC/SM 74LVTH273 TSSOP-20 3.3V 2 U14,U15 IC/SM 74LVC573 SOIC20 No Bus H 2 U3 IC/SM 74C32 TSSOP-14 1 U27 IC/SM 3.3V Quad Switch(QSOP16)	Original	0700F 74LVC04AD SOIC14 74LVC08 TSSOP-14 74LVC14 74LVTH273 TSSOP-20 74LVC573 U20 diode sm C181-C187 C69 diode sm RMC 0805 1.2M C159C Motorola R97 P13B3125Q PTC111 IC 93c46 bcr beckman resistor	PDF
92196a Abstract: 0603HC-47NXJL Text: RFPA3809 RFPA3809 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features   High Linearity: OIP3=49dBm 880MHz Low Noise: NF=3.1dB (2140MHz)  P1dB>29dBm  400MHz to 2700MHz Operation  Thermally Enhanced Slug	Original	RFPA3809 400MHz 2700MHz 2700MHz 49dBm 880MHz) 2140MHz) 29dBm 92196a 0603HC-47NXJL	PDF
umk105cg101jv-f Abstract: RF transceiver LTE RFPA3809 BLM18EG221SN1D AVX 0402 C0G PAF-S05-008 TAJA106K010R PAF-S05 CG180JV-F PA380X410 Text: RFPA3809 RFPA3809 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features   High Linearity: OIP3=49dBm 880MHz Low Noise: NF=3.1dB (2140MHz)  P1dB>29dBm  400MHz to 2700MHz Operation  Thermally Enhanced Slug	Original	RFPA3809 400MHz 2700MHz 2700MHz 49dBm 880MHz) 2140MHz) 29dBm umk105cg101jv-f RF transceiver LTE RFPA3809 BLM18EG221SN1D AVX 0402 C0G PAF-S05-008 TAJA106K010R PAF-S05 CG180JV-F PA380X410	PDF
RFPA3809 Abstract: cap 18pF 50V 10 0603 X7R RFMD PA LTE fer bead PAF-S05 Text: RFPA3809 RFPA3809 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features   High Linearity: OIP3=49dBm 880MHz Low Noise: NF=3.1dB (2140MHz)  P1dB>29dBm  400MHz to 2700MHz Operation  Thermally Enhanced Slug	Original	RFPA3809 400MHz 2700MHz RFPA3809 49dBm 880MHz) 2140MHz) 29dBm cap 18pF 50V 10 0603 X7R RFMD PA LTE fer bead PAF-S05	PDF
CR16-1053FM Abstract: DC457 LTC3727 EEFUE0J151R LTC3727EG TP10 06033A102JAT1A CR16-105JM c17 dual mos poly avx Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 457 MULTI-PHASE SYSTEM POWER SUPPLY LTC3727 DESCRIPTION Demonstration circuit 457 features the LTC3727 in a dual output—5V/4A and 12V/3A—low EMI, 2-phase, adjustable, dual switching regulator controller application.	Original	LTC3727 LTC3727 on-05MG 2802S-03G2 CCIJ2MM-138G CDRH124-100MC CDRH124-120MC FDS6990S CR16-105JM CJ06-000M CR16-1053FM DC457 EEFUE0J151R LTC3727EG TP10 06033A102JAT1A CR16-105JM c17 dual mos poly avx	PDF
digi-key Abstract: EPCOS Y cap r59 smd SW836CT-ND 883CT Text: Bill of Materials MCP3911 Single Phase Anti-Tamper Energy Meter Project: 102-00385-R4 MCP3911 Single Phase Anti Tamper Meter.PrjPCB Source Data FX:\AIPD Eval Boards\102-00381 thru 00390\102-00385\Design Files\REV 4\102-00385-R4 MCP39 Engineer: Adrian Mot Drawn By:	Original	MCP3911 102-00385-R4 Boards\102-00381 00390\102-00385\Design 4\102-00385-R4 MCP39 305VAC CRCW08055R10FKEA C1608X7R1H333K digi-key EPCOS Y cap r59 smd SW836CT-ND 883CT	PDF
D03316P-103 Abstract: 4.7kohm resistor 88638-61102 DRFC16H st lm385 bcr beckman resistor R36-R38 74C32 Framatome 74c32 datasheet Text: 0700D _BoM Location Part Descripition QTY U21 IC/SM 74LVC04AD SOIC14 3.3V 1 U4,U26 IC/SM 74LVC08 3.3V TSSOP-14 2 U22 IC/SM 74LVC14 3.3V TSSOP-14 1 U7,U8 IC/SM 74LVTH273 TSSOP-20 3.3V 2 U14,U15 IC/SM 74LVC573 SOIC20 No Bus H 2 U3 IC/SM 74C32 TSSOP-14 1 Q3,Q6,Q7	Original	0700D 74LVC04AD SOIC14 74LVC08 TSSOP-14 74LVC14 74LVTH273 TSSOP-20 74LVC573 D03316P-103 4.7kohm resistor 88638-61102 DRFC16H st lm385 bcr beckman resistor R36-R38 74C32 Framatome 74c32 datasheet	PDF
SLAU265 Abstract: MSP430Fxx mzp a 100 45 16 SMD transistor code NC CL05B CT2194MST-ND 1003 smd resistor mzp a 100 47 16 6 pin SMD CODE 151 SOT 363 m25p16vmn6p Text: REP430F Replicator for MSP430 MCU User’s Manual PM041A01 Rev.0 October-23-2009 Elprotronic Inc. Elprotronic Inc. 16 Crossroads Drive Richmond Hill, Ontario, L4E-5C9 CANADA Web site: E-mail: Fax: Voice: www.elprotronic.com info@elprotronic.com 905-780-2414	Original	REP430F MSP430 PM041A01 October-23-2009 OT-533 SN74LVC1T45DRLR SLAU265 MSP430Fxx mzp a 100 45 16 SMD transistor code NC CL05B CT2194MST-ND 1003 smd resistor mzp a 100 47 16 6 pin SMD CODE 151 SOT 363 m25p16vmn6p	PDF
Untitled Abstract: No abstract text available Text: RFPA3807 RFPA3807 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features  High Linearity: OIP3=46dBm at 880MHz  Low Noise: NF<4dB  Low DC Power: 5V, 90mA  400MHz to 2700MHz Operation  Thermally Enhanced Slug	Original	RFPA3807 400MHz 2700MHz 2700MHz 46dBm 880MHz	PDF

GRM1555C1H101JZ01D Abstract: BLM18EG221SN1D PBC02SAAN RMC1/16JPTP PA380 UMK105BJ102KV-F RFPA3807 UMTS2100 l0402 GRM1555C1H101JZ Text: RFPA3807 RFPA3807 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features  High Linearity: OIP3=46dBm at 880MHz  Low Noise: NF<4dB  Low DC Power: 5V, 90mA  400MHz to 2700MHz Operation  Thermally Enhanced Slug	Original	RFPA3807 400MHz 2700MHz 2700MHz 46dBm 880MHz GRM1555C1H101JZ01D BLM18EG221SN1D PBC02SAAN RMC1/16JPTP PA380 UMK105BJ102KV-F RFPA3807 UMTS2100 l0402 GRM1555C1H101JZ	PDF
Untitled Abstract: No abstract text available Text: RFPA3807 RFPA3807 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features  High Linearity: OIP3=46dBm at 880MHz  Low Noise: NF<4dB  Low DC Power: 5V, 90mA  400MHz to 2700MHz Operation  Thermally Enhanced Slug	Original	RFPA3807 400MHz 2700MHz 2700MHz 46dBm 880MHz	PDF
Untitled Abstract: No abstract text available Text: RFPA3807 RFPA3807 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features High Linearity: OIP3=43dBm at 880MHz Low Noise: NF<4dB Low DC Power: 5V, 90mA 400MHz to 2700MHz Operation Thermally Enhanced Slug	Original	RFPA3807 400MHz 2700MHz RFPA3807 43dBm 880MHz	PDF
Untitled Abstract: No abstract text available Text: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=3.2dB at 945MHz  5V to 7V Operation	Original	RFPA3800 960MHz 150MHz 960MHz 48dBm 945MHz RFPA3800 DS120611	PDF
RFPA2026 Abstract: No abstract text available Text: RFPA2026 RFPA2026 3-Stage Power Amplifier Module, 2W 700MHz to 2700MHz DET_IN 26 GND RFOUT3/Vcc3 27 RFOUT3/Vcc3 GND 28 GND GND The RFPA2026 is a 3-stage HBT power amplifier module with high gain and excellent efficiency. External matching and bias control allows the RFPA2026 to be optimized for various	Original	RFPA2026 700MHz 2700MHz 2140MHz 24dBm -45dBc 33dBm RFPA2026	PDF
UMK105cg Abstract: 500R07S1R2 GSM WCDMA repeater circuit LQP15MN 500R07S RFMD PA LTE DS120611 RFPA3800 500r07 MuRata Electronics Kamaya Text: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency    Low Noise: NF=3.2dB at 945MHz 5V to 7V Operation	Original	RFPA3800 960MHz RFPA3800 150MHz 48dBm 945MHz DS120611 UMK105cg 500R07S1R2 GSM WCDMA repeater circuit LQP15MN 500R07S RFMD PA LTE DS120611 500r07 MuRata Electronics Kamaya	PDF
920MHz Abstract: RFMD PA LTE class c tuned amplifier Text: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency    Low Noise: NF=3.2dB at 945MHz 5V to 7V Operation	Original	RFPA3800 960MHz RFPA3800 150MHz 48dBm 945MHz DS120103 920MHz RFMD PA LTE class c tuned amplifier	PDF
RFPA2026 Abstract: PA2026 RFPA2026SR RFPA2026PCK-411 GRM1555C1H2R4BZ01E GJM1555C1H150JB01E RFPA2026SQ femtocell Text: RFPA2026 RFPA2026 3-Stage Power Amplifier Module 2W, 700MHz to 2700MHz DET_IN 24 GND 25 GND RFOUT3/Vcc3 26 WCDMA Power at 2140MHz = 24dBm with -45dBc ACPR Flexible External Matching for Band Selection Gain = 38dB at 2140MHz P1dB = 33dBm at 2140MHz	Original	RFPA2026 700MHz 2700MHz 28-Pin, 2140MHz 24dBm -45dBc 2140MHz 33dBm RFPA2026 PA2026 RFPA2026SR RFPA2026PCK-411 GRM1555C1H2R4BZ01E GJM1555C1H150JB01E RFPA2026SQ femtocell	PDF
Untitled Abstract: No abstract text available Text: RFPA2089 RFPA2089 InGaP HBT Power Amplifier 0.25W, 50MHz to 2700MHz InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz Package: SOT-89 GND 4 Features  -60dBc ACPR at 13dBm WCDMA  0.25W Output Power P1dB  Excellent Linearity to DC Power Ratio 	Original	RFPA2089 50MHz 2700MHz OT-89 -60dBc 13dBm 65GHz	PDF
UMK105BJ102KV-F Abstract: RFMD PA LTE 258-G RFPA2089 LL1608-FSL10NJ lte transceiver Text: RFPA2089 RFPA2089 InGaP HBT Power Amplifier 0.25W, 50MHz to 2700MHz InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz Package: SOT-89 GND 4 Features  -60dBc ACPR at 13dBm WCDMA  0.25W Output Power P1dB  Excellent Linearity to DC Power Ratio 	Original	RFPA2089 50MHz 2700MHz RFPA2089 OT-89 -60dBc 13dBm 65GHz UMK105BJ102KV-F RFMD PA LTE 258-G LL1608-FSL10NJ lte transceiver	PDF

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CAP TAJA Search Results

CAP TAJA Result Highlights (5)

CAP TAJA Datasheets Context Search

VCO19V

AD-009

ATC 600F

R2532

ATC 600F

U20 diode sm

92196a

umk105cg101jv-f

RFPA3809

CR16-1053FM

digi-key

D03316P-103

SLAU265

Untitled

GRM1555C1H101JZ01D

Untitled

Untitled

Untitled

RFPA2026

UMK105cg

920MHz

RFPA2026

Untitled

UMK105BJ102KV-F