philips ELECTROLYTIC capacitors
Abstract: electrolytic capacitor smd code marking Philips Electrolytic electrolytic capacitor 1000 uf with ESR rating Solid Aluminium SAL permittivity of aluminium oxide Philips LL capacitor axial Philips Electrolytic Capacitor axial MBC547 SMD electrolytic capacitor
Text: Philips Components Electrolytic Capacitors General Introduction TRANSLATION OF TECHNICAL TERMS SOME IMPORTANT TERMS DES TERMES IMPORTANTES EINIGE WICHTIGE BEGRIFFE Ambient temperature Tamb température ambiante Umgebungstemperatur Assessment level niveau d'assurance
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Electric Double Layer Capacitors, Radial Lead Type
Abstract: No abstract text available
Text: Introduction www.vishay.com Vishay BCcomponents Aluminum Capacitors TRANSLATION OF TECHNICAL TERMS SOME IMPORTANT TERMS Ambient temperature Tamb DES TERMES IMPORTANTES EINIGE WICHTIGE BEGRIFFE température ambiante Umgebungstemperatur Assessment level niveau d'assurance
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19-Mar-15
Electric Double Layer Capacitors, Radial Lead Type
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Capacitor Bank
Abstract: MOSFET FOR 10khz Semikron Skai 2 semikron skai AIPM
Text: Circuit Irms Vdc Types B6CI 430 80 SKAI 6001MD10 1452 L Symbol Conditions Irms1 no overload, Tamb= 50°C, 10kHz, p.f.=0,8 overload, t<20s MOSFET driver without supply; min VGS = 10V, Tj = 25°C VGS = 10V, Tj = 125°C Vcc= 50V, ID= 300A, T j= 125°C Inverse diode
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6001MD10
10kHz,
Capacitor Bank
MOSFET FOR 10khz
Semikron Skai 2
semikron skai
AIPM
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graphite foil
Abstract: equivalente SMD catalog discharge capacitor welding smd diode Cathode is indicated by a blue band Vishay capacitor Vishay Capacitor marking permittivity of aluminium oxide .22 uf 400 volt ac capacitor Cathode is indicated by a blue band marking code Relief Valve DATA SHEET
Text: Introduction Vishay BCcomponents Aluminum Capacitors TRANSLATION OF TECHNICAL TERMS SOME IMPORTANT TERMS Ambient temperature Tamb DES TERMES IMPORTANTES EINIGE WICHTIGE BEGRIFFE température ambiante Umgebungstemperatur Assessment level niveau d'assurance
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22-Mar-07
graphite foil
equivalente SMD catalog
discharge capacitor welding
smd diode Cathode is indicated by a blue band
Vishay capacitor
Vishay Capacitor marking
permittivity of aluminium oxide
.22 uf 400 volt ac capacitor
Cathode is indicated by a blue band marking code
Relief Valve DATA SHEET
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Capacitor Bank
Abstract: semikron SKS B2CI B41840 design dc link inverter semikron SKS B41840 EPCOS b2ci semikron thermal switch semikron SKS 50 B2CI B57045K0682K000
Text: SEMISTACK - IGBT Circuit B2CI Symbol Irms max Tamb = 35 °C SEMITOP Stack Single-phase inverter SKS 210F B2CI 07 V01 SK 260 MB10 SKYPER 32 HEATSINK HS2160DBP 1 Vdsmax fswmax fSWmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb Visol w Cooling Preliminary Data
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HS2160DBP
10min
B41840
F9478M
Capacitor Bank
semikron SKS B2CI
design dc link inverter
semikron SKS
B41840 EPCOS
b2ci
semikron thermal switch
semikron SKS 50 B2CI
B57045K0682K000
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B43875
Abstract: CAPACITOR B43875 A9478 IGBT SEMISTACK Capacitor Bank SEMISTACK SEMISTACK IGBT igbt cooling 126HD B4387
Text: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMIX Stack 1 Three-phase inverter SKS 130F B6CI 88 V12 SEMiX 503 GB 126HD P122/550mm Skyper 32 Vcemax fswmax fSWmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb Visol w Cooling Preliminary Data
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10min
126HD
P122/550mm
B43875
A9478
CAPACITOR B43875
IGBT SEMISTACK
Capacitor Bank
SEMISTACK
SEMISTACK IGBT
igbt cooling
126HD
B4387
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capacitor h 125 tam
Abstract: TAM 25-2412-B h 125 tam pot 100K smd TAM 25-2411 TAM 25-2432 EN55022-A TAM25 TAM 25-2431 50X50X10
Text: DC/DC Converter TAM 25 Series 25 Watt Features Single-, Dual-, and Triple Output Models Wide 2:1 Input Range Very high Efficiency up to 84% Extended Temp. Range available Internal Filter to meet EN 55022, Class A and FCC Part 15, Level A I/O-Isolation 500VDC 1’500VDC for Triple
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500VDC
500VDC
50x50x10
71x61x10
CH-8002
capacitor h 125 tam
TAM 25-2412-B
h 125 tam
pot 100K smd
TAM 25-2411
TAM 25-2432
EN55022-A
TAM25
TAM 25-2431
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B43875
Abstract: B43875A5228 semikron SKHI 123D SKS 25F semikron SKm 50 GB 123D semikron SKS B6CI 16 V12 IGBT J19 Connector SKHI B4387
Text: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMITRANS Stack Three-phase inverter SKS 25F B6U+B6CI 09 V12 SKM 50 GB 123D SKKD 46/12 P3/410F SKHI 23/12-S 1 Vcemax fswmax fSWmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb Visol w Cooling
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10min
B43875A5228
B43875
semikron SKHI 123D
SKS 25F
semikron SKm 50 GB 123D
semikron SKS
B6CI 16 V12
IGBT J19
Connector SKHI
B4387
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semikron SKS
Abstract: B43875A5478 B43875 SKS 50F 9CN1 CN25 B6CI semikron SKpc 22 Three-phase inverter SEMISTACK
Text: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMITRANS Stack 1 Three-phase inverter SKS 50F B6U+B6CI+B1CI 19 V12 SKM 100 GB 124D SKKD 46/12 P3/380F SKHI 22B Vcemax fswmax fSWmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb Visol w
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10min
B43875A5478
semikron SKS
B43875
SKS 50F
9CN1
CN25
B6CI
semikron SKpc 22
Three-phase inverter
SEMISTACK
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B43875
Abstract: 20/j1nac3 semikron SKS SKHI 20 SKHI 20 opa semikron SKD 75 gal CAPACITOR B43875 j1nac3 B6CI 16 V12 LA 125
Text: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMIX Stack 1 Three-phase inverter SKS 100F B6U+B6CI+E1CIF 80 V12 SEMiX 352 GB 128 SEMiX 302 GAL 126 SKD 145/16 P122 / 550 Vcemax fswmax fSWmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb
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10min
B43875
A9478
20/j1nac3
semikron SKS
SKHI 20
SKHI 20 opa
semikron SKD 75 gal
CAPACITOR B43875
j1nac3
B6CI 16 V12
LA 125
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Untitled
Abstract: No abstract text available
Text: SKS 1270F B6C 860 V16 Characteristics Symbol Conditions min. typ. max. Unit 1270 A 1001 1502 A 901 1803 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Thyristor Three-phase controlled
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1270F
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Untitled
Abstract: No abstract text available
Text: SKS 1500F B6C 1010 V16 Characteristics Symbol Conditions min. typ. max. Unit 1500 A 1187 1781 A 1068 2137 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Thyristor Three-phase controlled
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1500F
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Untitled
Abstract: No abstract text available
Text: SKS 1600F B6C 1490 V22 Characteristics Symbol Conditions min. typ. max. Unit 1600 A 1224 1837 A 1066 2132 A 2200 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Thyristor Three-phase controlled
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1600F
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Untitled
Abstract: No abstract text available
Text: SKS 1080F B6C 730 V16 Characteristics Symbol Conditions min. typ. max. Unit 1080 A 831 1247 A 736 1468 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Thyristor Three-phase controlled
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1080F
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Untitled
Abstract: No abstract text available
Text: SKS 1270F B6C 860 V16 Characteristics Symbol Conditions min. typ. max. Unit 1270 A 1001 1502 A 901 1803 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Thyristor Three-phase controlled
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1270F
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Untitled
Abstract: No abstract text available
Text: SKS 700N B6C 470 V16 Characteristics Symbol Conditions min. typ. max. Unit 700 A 604 907 A 549 1099 A 1600 V Electrical Data Id Tamb = 45°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Thyristor Three-phase controlled
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Untitled
Abstract: No abstract text available
Text: SKS 1080F B6C 730 V16 Characteristics Symbol Conditions min. typ. max. Unit 1080 A 831 1247 A 736 1468 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Thyristor Three-phase controlled
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1080F
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Untitled
Abstract: No abstract text available
Text: SKS 1200F B6C 820 V16 Characteristics Symbol Conditions min. typ. max. Unit 1200 A 929 1394 A 821 1643 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Thyristor Three-phase controlled
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1200F
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Untitled
Abstract: No abstract text available
Text: SKS 290F B6U 190 V16 Characteristics Symbol Conditions min. typ. max. Unit 290 A 225 337 A 201 402 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Thyristor Three-phase uncontrolled
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P3/265F
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semikron SKS
Abstract: 260f
Text: SKS 260F B6U 175 V16 Characteristics Symbol Conditions min. typ. max. Unit 260 A 208 313 A 187 375 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Diode Three-phase uncontrolled
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P3/180F
semikron SKS
260f
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semikron SKS
Abstract: inverter 12 V to 220 V 3 phase IGBT inverter design B6CI 16 V12 hall sensor 326 B6CI SKS 21F skhi 20opa connector 26 pin semikron 220 V inverter 12 V
Text: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMITOP Stack 1 Three-phase inverter SKS 21F B6U+B6CI+E1CIF 12 V12 SK 40 GB 123 SK 30 GAL 123 SK 70 D 12 P 35/260F Vcemax fswmax fswmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb Visol
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10min
B43303A0687
semikron SKS
inverter 12 V to 220 V
3 phase IGBT inverter design
B6CI 16 V12
hall sensor 326
B6CI
SKS 21F
skhi 20opa
connector 26 pin semikron
220 V inverter 12 V
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semikron SKS 22F
Abstract: semikron SKS SKS 22F B6CI 3 phase IGBT inverter design skhi 20opa lem lah M/425-SK/N LAH 25-NP semikron skhi 20
Text: SEMISTACK - IGBT Circuit B6CI Symbol Irms max Tamb = 35 °C SEMITOP Stack 1 Three-phase inverter SKS 22F B6U+B6CI+E1CIF 13 V12 SK 30 GB 128 SK 30 GAL 123 SK 70 D 12 P 35/260F Vcemax fswmax fswmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj Tstg Tamb Visol
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10min
B43303A0687
semikron SKS 22F
semikron SKS
SKS 22F
B6CI
3 phase IGBT inverter design
skhi 20opa
lem lah
M/425-SK/N
LAH 25-NP
semikron skhi 20
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195D
Abstract: No abstract text available
Text: Model 195D_ Vishay Sprague VISHAY Tanta,um Chjp Capacitors S o |jd Tan tam o unt Conformal Coated FEATURES • Qualified CECC, 30801/006/008 - CTC2 • 8mm, 12mm Tape Packaging to EIA-481-1 reeling per IEC 286-3. T 178mm standard 13” (330mm) available
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EIA-481-1
178mm)
330mm)
30-Aug-01
195D
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Untitled
Abstract: No abstract text available
Text: ADV MI CRO G5S7S5Ö taME D MEMORY DDansa DEO • AMDM ZT Advanced Micro Devices Am27C010 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Latch-up protected to 100 mA from -1 V to Vcc + 1 V ■ Fast access time — 90 ns ■ High noise immunity
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Am27C010
32-pin
KS000010
10205D-10
Anfl27C010
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