KEC DATE code
Abstract: Kemet CAPACITOR DATE CODE MARKING ON ceramic MIL-PRF-49467 7400 Kemet CAPACITOR DATE CODE MARKING kemet ceramic 49467 HV23 HV26 KEC MARKING CODE HV25
Text: High Voltage Radial Conformally Coated Ceramic Capacitors HV Series CAPACITOR OUTLINE DRAWING L DIMENSIONS T HV20 HV21 HV22 HV23 HV24 HV25 HV26 HV30 HV31 HV33 HV34 HV35 HV36 H 1.25 Min. S Sizes in Inches mm max. Style .025 (22 ga.) solder plated Cu-clad Steel (CCFE)
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1000pF
4XD50W122M
KEC DATE code
Kemet CAPACITOR DATE CODE MARKING ON ceramic
MIL-PRF-49467
7400
Kemet CAPACITOR DATE CODE MARKING
kemet ceramic 49467
HV23
HV26
KEC MARKING CODE
HV25
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C3H marking
Abstract: C3K marking marking c1g PC3224TB marking c3k PC3215TB C3k mmic marking c1h capacitor feed-through C1H mmic
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The PC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.
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UPC3224TB
PC3224TB
HS350
WS260
IR260
PU10490EJ01V0DS
C3H marking
C3K marking
marking c1g
marking c3k
PC3215TB
C3k mmic
marking c1h
capacitor feed-through
C1H mmic
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Untitled
Abstract: No abstract text available
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
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PC3232TB
PC3232TB
IR260
WS260
HS350
PU10597EJ01V0DS
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PC3223TB
Abstract: marking c3j C1f TRANSISTOR marking c1d PC3223TB-E3 PC2708TB PC2709TB UPC3223TB PC3223TB-E3-A PC2710TB
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.
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UPC3223TB
PC3223TB
HS350
WS260
IR260
PU10491EJ01V0DS
marking c3j
C1f TRANSISTOR
marking c1d
PC3223TB-E3
PC2708TB
PC2709TB
UPC3223TB
PC3223TB-E3-A
PC2710TB
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DFT301-801
Abstract: DFT301 GRM40CH102J50PT GRM39CH100D50PT GRM39CH080D50PT PC8128TB GRM39CH050C50PT
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8179TK 3 V SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50
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PC8179TK
PC8179TK
PC8179TB
HS350
WS260
IR260
PU10059EJ02V0DS
DFT301-801
DFT301
GRM40CH102J50PT
GRM39CH100D50PT
GRM39CH080D50PT
PC8128TB
GRM39CH050C50PT
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DFT301
Abstract: DFT301-801 grm40ch102j50pt PC8179TK-E2 7R102S50 GRM39CH100D50PT marking code 18 6pin GRM39CH080D50PT PC8178
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8179TK 3 V SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50
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PC8179TK
PC8179TK
PC8179TB
IR260
WS260
HS350
PU10059EJ02V0DS
DFT301
DFT301-801
grm40ch102j50pt
PC8179TK-E2
7R102S50
GRM39CH100D50PT
marking code 18 6pin
GRM39CH080D50PT
PC8178
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marking C3Z
Abstract: marking c1h PC3242TB PC2712TB "Marking k2" mmic
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The PC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.
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PC3242TB
PC3242TB
HS350
WS260
IR260
PU10803EJ01V0DS
marking C3Z
marking c1h
PC2712TB
"Marking k2" mmic
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8712 RESISTOR
Abstract: NES1823M-180
Text: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 180 W of output power CW with high linear gain, high
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NES1823M-180
NES1823M-180
IMT2000
8712 RESISTOR
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NES1823M-180-A
Abstract: No abstract text available
Text: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It operates at 12 V and is capable of delivering 180 W of output power CW with high
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NES1823M-180
NES1823M-180
IMT2000
NES1823M-180-A
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Transistor C3E
Abstract: C2H marking
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3241TB 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3241TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.
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PC3241TB
PC3241TB
IR260
WS260
HS350
PU10774EJ01V0DS
Transistor C3E
C2H marking
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Untitled
Abstract: No abstract text available
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3241TB 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3241TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.
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PC3241TB
PC3241TB
IR260
WS260
HS350
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RO4003C
Abstract: S11F PC2710TB C3J marking UPC3223TB marking c3j marking c3s
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
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PC3232TB
PC3232TB
RO4003C
S11F
PC2710TB
C3J marking
UPC3223TB
marking c3j
marking c3s
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J3780
Abstract: IMT-2000 NES1823M-240 J4083
Text: DATA SHEET GaAs FET NES1823M-240 240 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT-2000 base station systems. It is capable of delivering 240 W of output power CW with high linear gain, high
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NES1823M-240
NES1823M-240
IMT-2000
J3780
J4083
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NEC 09030
Abstract: NEM090303M-28 8712 RESISTOR ldmos nec
Text: PRELIMINARY DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090303M-28 N-CHANNEL SILICON POWER MOS FET FOR UHF-BAND POWER AMPLIFIER DESCRIPTION The NEM090303M-28 is an N-channel enhancement-mode lateral MOS FET designed for driver stage in 0.5 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/D-AMPS/PDC cellular base station amplifiers. Dies are
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NEM090303M-28
NEM090303M-28
PU10312EJ01V0DS
NEC 09030
8712 RESISTOR
ldmos nec
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NES1823M-240
Abstract: j3780
Text: DATA SHEET GaAs FET NES1823M-240 240 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It operates at 12 V and is capable of delivering 240 W of output power CW with high
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NES1823M-240
NES1823M-240
IMT2000
j3780
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MARKING C3F
Abstract: PC8182TB PC8181TB F MARKING 6PIN transistor marking wt
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.
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PC8182TB
PC8182TB
HS350
WS260
VP215
IR260
PU10206EJ01V0DS
MARKING C3F
PC8181TB
F MARKING 6PIN
transistor marking wt
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6 GHZ nec
Abstract: PC2710TB transistor marking c3n C3J marking 8125 marking c3j
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.
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PC3232TB
PC3232TB
PU10597EJ01V0DS
6 GHZ nec
PC2710TB
transistor marking c3n
C3J marking
8125
marking c3j
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Untitled
Abstract: No abstract text available
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION The PC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.
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PC3240TB
PC3240TB
IR260
WS260
HS350
PU10751EJ01V0DS
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C3H marking
Abstract: UPC3224TB HS350 marking c1h UPC2712TB c3k cel
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.
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UPC3224TB
PC3224TB
PC3224TB-E3
C3H marking
UPC3224TB
HS350
marking c1h
UPC2712TB
c3k cel
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HS350
Abstract: C3K marking uPC2711 marking C3K marking c1g
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.
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PC3224TB
PC3224TB
PC3224TB-E3
HS350
C3K marking
uPC2711
marking C3K
marking c1g
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PC8231TK
Abstract: marking 6K
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8231TK SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The PC8231TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications. This device exhibits low noise figure and high power gain
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PC8231TK
PC8231TK
HS350
WS260
IR260
PU10613EJ01V0DS
marking 6K
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8211TK SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The µPC8211TK is a silicon germanium SiGe monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications.
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PC8211TK
PC8211TK
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Transistor Marking C3
Abstract: PC2710TB UPC3223TB PC3223TB marking c3j HS350 PC2708TB marking c1d PC3223TB-E3 PC3223TB-E3-A
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.
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UPC3223TB
PC3223TB
Transistor Marking C3
PC2710TB
UPC3223TB
marking c3j
HS350
PC2708TB
marking c1d
PC3223TB-E3
PC3223TB-E3-A
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C3j marking
Abstract: UPC3223TB marking c3j HS350 PC2710TB marking c1d PU10491EJ01V0DS UPC3223TB-E3
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.
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UPC3223TB
PC3223TB
C3j marking
UPC3223TB
marking c3j
HS350
PC2710TB
marking c1d
PU10491EJ01V0DS
UPC3223TB-E3
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