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    CB 548 TRANSISTOR Search Results

    CB 548 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    CB 548 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C 547 C

    Abstract: C 548 B C 547 B ic 548 bc 547 Transistors bc 548 BC 546 BC548 BC 548 bc 548 B 15
    Text: BC 546 • BC 547 • BC 548 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendung: Vor- und Treiberstufen Application: Pre and d river stages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W


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    transistor C 548 B

    Abstract: transistor c 548 BC547 bc548 transistor 547 TRANSISTOR bc546 fairchild transistor b 548 transistor bc547 transistor 547 b C 548 B
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER • HIGH VO LTAG E: BC546, VCeo=65V • LO W NOISE: BC549, BC550 • C om plem ent to BC556 . BC560 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage


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    BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 transistor C 548 B transistor c 548 BC547 bc548 transistor 547 TRANSISTOR bc546 fairchild transistor b 548 transistor bc547 transistor 547 b C 548 B PDF

    CB 548 transistor

    Abstract: transistor C 548 B
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER • HIGH VOLTAGE: BC546, VCeo=65V • LOW NOISE: BC549, BC550 • Complement to BC556 . BC560 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a ra c te ris tic Sym bol Collector Base Voltage


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    BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 CB 548 transistor transistor C 548 B PDF

    BC548

    Abstract: bc547 bc546c transistor NPN 548 C 547 c bc546 transistor c 548 c BC547 w 2 d BC548 transistor transistor B 548
    Text: ICC TO-92 Plastic-Encapsulate Transistors BC546,B/BC547fA,BfC/BC548,A,B,C TRANSISTOR NPN FEATURES on P cm ; IcM: 0 .6 2 5 W (T a m b = 2 5 ° C ) 0 .1 A WÊmÊ&m voltage V cbo: B C 546 : 80V B C 547 : 50V B C 548 : 30V S iÊ l^M Ê Ê p^àA d.ataraaa junction tem perature range


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    BC546 B/BC547fA BfC/BC548 BC547 BC548 BC548 bc546c transistor NPN 548 C 547 c transistor c 548 c BC547 w 2 d BC548 transistor transistor B 548 PDF

    BC546

    Abstract: bc548b
    Text: BC546 to 548 yv _ SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic TO 92 package. QUICK REFERENCE D ATA BC546 Collector-emitter voltage V g E = 0 BC547 BC548 V CES max v CEO max 80 50 30 V Collector-emitter voltage (open base)


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    BC546 BC547 BC548 BC546 BC546A BC546B BC547A bc548b PDF

    transistor c 548

    Abstract: transistor C 548 B transistor 547 b transistor C 547 c transistor c 548 c C 547 B C 547 transistor transistor b 548 transistor C 547 C 547 C
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LT A G E : BC546, V CEo=65V • L O W NOISE: BC549, B C5S0 • Complement to BC556 . B C 560 ABSOLUTE MAXIMUM RATINGS <TA=25t C h aracte ristic Sym b o l Collector Base Voltage


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    BC546/547/548/549/550 BC546, BC549, BC556 BC546 BC547/550 BC548/549 BC546 BC547/550 BC548/549/550 transistor c 548 transistor C 548 B transistor 547 b transistor C 547 c transistor c 548 c C 547 B C 547 transistor transistor b 548 transistor C 547 C 547 C PDF

    JC547A

    Abstract: JC546 JC547 C 548 B JC546B JC546A JC547B JC547C JC548 JC548A
    Text: • bfc,S3S31 DDETRbfl 15b H A P X JC546 to 548 N AMER PHILIPS/DISCRETE b'ìE D SILICON PLANAR EPITAXIAL TRANSISTORS General purpose NPN transistors in a plastic TO-92 especially suitable fo r use in driver stages o f audio amplifiers. QUICK REFERENCE D A T A


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    S3S31 JC546 JC546 JC547 JC548 200mA bbS3R31 2717b JC547C JC547A C 548 B JC546B JC546A JC547B JC548 JC548A PDF

    transistor C 548 B

    Abstract: TR BC 548 transistor c 548
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC546, VOEo =65V • LOW NOISE: BC549, BC550 • Complement to BCS56 . BC 560 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector Base Voltage


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    BC546/547/548/549/550 BC546, BC549, BC550 BCS56 BC546 BC548/549 BC546/547 transistor C 548 B TR BC 548 transistor c 548 PDF

    C 547 B

    Abstract: c547b c546b TRANSISTOR B 546b transistor C 546b C 546 B C548 free BC557 BC557 C546
    Text: BC546,BC547,BC548 SERIES NPN GENERAL PURPOSE TRANSISTOR VOLTAGE 30V/45V/65V 625 mWatts POWER FEATURES • NPN epitaxial silicon, planar design • Collector current I C = 100mA • Complimentary PNP device:BC556,BC557,BC558 Series • Pb free product :99% Sn above can meet RoHS


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    BC546 BC547 BC548 0V/45V/65V 100mA BC556 BC557 BC558 MIL-STD-202, 02grams C 547 B c547b c546b TRANSISTOR B 546b transistor C 546b C 546 B C548 free BC557 C546 PDF

    transistor vc 548

    Abstract: 547 transistor BC546.547 transistor c 548 transistor NPN 548 transistor C 548 B transistor C 547 TRANSISTOR BC 550 b transistor b 548 transistor c 548 c
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC546, VCEO= 6 5 V • LOW NOISE: BC549, BC550 • Com plem ent to BC556 . BC 560 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector Base Voltage


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    BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC546 BC547/550 BC548/549 transistor vc 548 547 transistor BC546.547 transistor c 548 transistor NPN 548 transistor C 548 B transistor C 547 TRANSISTOR BC 550 b transistor b 548 transistor c 548 c PDF

    BC550

    Abstract: ic 548 CBC549 C 548 B BC550C BC549B transistors BC 548 BC 558 bc548b bc557 bc547b
    Text: SIEMENS SIE » • ßS3Sfc.05 GG41b0fl 7ST « S I E G S I E M EN S A K T I E N 6 E S E L L S C H A F "F Z ? *-2 ./ NPN Silicon AF Transistors • • • • BC546 BC550 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz


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    GG41b0fl BC546 BC550 Q62702-C687 Q62702-C687-V1 Q62702-C687-V2 Q62702-C688 Q62702-C688-V1 Q62702-C688-V2 Q62702-C689 BC550 ic 548 CBC549 C 548 B BC550C BC549B transistors BC 548 BC 558 bc548b bc557 bc547b PDF

    Amplifier with transistor BC549

    Abstract: BC546 BC549 BC550 BC556 BC560 bc549 noise figure bc556 transistor npn transistor of bc548 Transistor B C 458
    Text: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Amplifier • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 Amplifier with transistor BC549 BC546 BC549 BC550 BC556 BC560 bc549 noise figure bc556 transistor npn transistor of bc548 Transistor B C 458 PDF

    bc546 fairchild

    Abstract: transistor BC549 hfe of transistor BC548 Transistor BC546/547/548/549/550 BC549 input for bc548 npn transistor NPN transistor bc548 BC546 BC549 BC550
    Text: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 bc546 fairchild transistor BC549 hfe of transistor BC548 Transistor BC546/547/548/549/550 BC549 input for bc548 npn transistor NPN transistor bc548 BC546 BC549 BC550 PDF

    ic 558

    Abstract: ic 556 transistors BC 548 BC 558 ic 556 specifications BC557 BC558 556 driver BC558 driver bc 558 transistors BC 548 BC 558 PNP
    Text: BC 556 • BC 557 • BC 558 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendung: Vor- und Treiberstufen Applications: Pre and driver stages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W


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    transistor bc549

    Abstract: bc556 transistor bc546 fairchild Transistor BC546/547/548/549/550 CBC546 BC546 BC549 BC550 BC556 BC560
    Text: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 transistor bc549 bc556 transistor bc546 fairchild Transistor BC546/547/548/549/550 CBC546 BC546 BC549 BC550 BC556 BC560 PDF

    DAS05

    Abstract: No abstract text available
    Text: Ordering n u m b e r:EN 1801E _ 2SC3676 NPN Triple Diffused Planar Silicon Transistor SA iYO i 900V/300mA High-Voltage Amp, High-Voltage Switching Applications A pplications • High-voltage amplifiers. - High-voltage switching applications. •Dynamic focus applications.


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    1801E 2SC3676 00V/300mA 2010C O220AB 80796TS 8-9202/4237AT/3185KI S05D4 DAS05 PDF

    bc550

    Abstract: bc550 noise figure transistor BC 548 Data transistor NPN 548 BC548 npn bc550 transistor transistor bc 548 npn BC550CTA
    Text: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 bc550 bc550 noise figure transistor BC 548 Data transistor NPN 548 BC548 npn bc550 transistor transistor bc 548 npn BC550CTA PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC3977, 2SC3977A 2SC3977, 2SC3977A Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching Unit ! mn • Features 4 .4 m a x . ,1 0 .2 m a x . 5.7max. • High sp eed sw itch in g 2.9max. • High c o lle c to r-b a s e v o lta g e V lbo


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    2SC3977, 2SC3977A 900peration 2SC3977 0Glb552 PDF

    transistor BC 458

    Abstract: BC 458 transistor transistor BC 548 Data bc546 fairchild BC546BTA bc546 TRANSISTOR B 546b BC 546A of transistor BC548 bc 547 b transistor
    Text: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 transistor BC 458 BC 458 transistor transistor BC 548 Data bc546 fairchild BC546BTA bc546 TRANSISTOR B 546b BC 546A of transistor BC548 bc 547 b transistor PDF

    bc549

    Abstract: transistor BC549 hfe Transistor NPN BC 549B BC549 NPN transistor transistor c 548 c Transistor Bc547 npn bc548 fairchild Amplifier with transistor BC549 TO92-3 Package Dimensions transistor BC 548 Data
    Text: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 bc549 transistor BC549 hfe Transistor NPN BC 549B BC549 NPN transistor transistor c 548 c Transistor Bc547 npn bc548 fairchild Amplifier with transistor BC549 TO92-3 Package Dimensions transistor BC 548 Data PDF

    JC547

    Abstract: JC546
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 14 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors JC546; JC547; JC548 FEATURES PINNING • Low curren t max. 100 mA


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    JC546; JC547; JC548 115002/00/03/pp8 JC547 JC546 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC546, VCeo= 65V . LOW NOISE: BC549, BC550 • C om plem ent to BC556 . BC560 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage


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    BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 PDF

    APPLICATION OF BC548 transistor

    Abstract: Amplifier with transistor BC548 information of BC548 BC548 for bc548 npn transistor BC548CTA transistor bc 547 transistor bc 548 npn bc 548b transistor BC549 input
    Text: BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 . BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC546/547/548/549/550 BC546, BC549, BC550 BC556 BC560 BC546 BC547/550 BC548/549 APPLICATION OF BC548 transistor Amplifier with transistor BC548 information of BC548 BC548 for bc548 npn transistor BC548CTA transistor bc 547 transistor bc 548 npn bc 548b transistor BC549 input PDF

    transistor 2sc 548

    Abstract: CBC 548 B
    Text: ISIEÛ 2SC D • ô23SbOS QQQ45G2 PNP Silicon Planar Transistors — SIEMENS AKTIENÛESELLSCHAFi02 BF 470 BF 472 °- BF 4 7 0 and BF 4 7 2 are epitaxial PNP silicon planar transistors in TO 1 2 6 plastic package 1 2 A 3 DIN 41 8 6 9 , sheet 4 . The collector is conductively connected to the metallic


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    23SbOS QQQ45G2 ESELLSCHAFi02 23Sfc BF470 BF472 transistor 2sc 548 CBC 548 B PDF