2SC2100
Abstract: 12ID 2j 20T
Text: 5 /U 3 y N P N ie ?*5 /? l/7 ls-î& h 7 y 5 > Z SILICON NPN EPITAXIAL PLANAR TRANSISTC O 2.0~ 30 M Hzìf SSB « S * « * « O 2.0~30M H z SSB A pplications Linear High L o w Supply (fë«EES8Sffl ) Power V oltage Amplifier Use) • 2 8M Hz-C5 5 W (P E P « $ ffitJ
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28MHz
-28MHz
VCC-12
2SC2100
12ID
2j 20T
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HM10474
Abstract: 43583 HM10474-10
Text: HM10474-8,HM10474-10 1024-word x 4-bit Fully Decoded Random Access Memory The H M 10474 is E C L 10k compatible, 1024-words x 4-bit, read write, random access memory developed for high speed systems such as scratch pads and control/buffer storages. The fabrication process is the Hitachi's low capacitance, oxide
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HM10474-8
HM10474-10
1024-word
1024-words
HM10474
cerdip-24pin
HM10474-10
43583
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94_ FEATURES * 200 Volt V DS * fW r io n * Low threshold APPLICATIONS * Telephone handsets ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200
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ZVNL120A
-125mA
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cd 2003 gp
Abstract: 2SC2100 i22d 121 122 opto 2-13B1A
Text: TOSHIBA •CDISCRETE/OPTO> 9097250 DE j T C H 7a5 Q Q D D n 34 D TO SHI BA <DI S C R E T E / O P T O > 39C 0 1 9 3 ^ SEMICONDUCTOR TO SHIBA T RA N SISTO R 2 S C 2 1 00 N P N E P I T A X I A L PLANAR U lt TECHNICAL DATA O * f S IL IC O N ~ 3 0 M H z iff S S B i I Ü 8 B Î i # S f f l
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00Dlci34
2SC2100
30MHz
28MHz
SEMfgtt-30dBfelT-e-i-o
2SC2100
Vcc-12-SV
TC-25Â
cd 2003 gp
i22d
121 122 opto
2-13B1A
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Untitled
Abstract: No abstract text available
Text: >: >:-Xv ¿C->:ÿ>:o >: • -;
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RF2424
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CY7B185
Abstract: cy7b185-12pc cy7b185-15pc 624a2 A10C CY7B185-10DC CY7B185-9VC i10121
Text: CY7B185 CYPRESS SEMICONDUCTOR Functional Description BiCMOS for optimum speed/power Ultra high speed — 9 ns Low active power — 750 mW Low standby power — 250 mW TTL-compatible inputs and outputs Capable o f w ithstanding greater than 2001V electrostatic discharge
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CY7B185
67B185â
10DMB
28-Lead
300-Mil)
CY7B185â
10LMB
28-Pin
CY7B185
cy7b185-12pc
cy7b185-15pc
624a2
A10C
CY7B185-10DC
CY7B185-9VC
i10121
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY IDT7MB4065 256K x 20 BiCMOS/CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 256K x 20 BiCMOS/CMOS static RAM module The IDT7MB4065 is a 256K x 20 BiCMOS/CMOS static RAM module constructed on an epoxy laminate FR-4 sub
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IDT7MB4065
48-pin
IDT7MB4065
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP560J TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC TLP560J TRIAC DRIVER U nit in mm PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE 3 2 1 T l Tf IT SOLID STATE RELAY 3 TTJ—E 4 The TOSHIBA TLP560J consists of a photo-triac optically coupled to a gallium arsenide infrared em itting diode in a six lead plastic DIP
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TLP560J
TLP560J
100mA
UL1577,
E67349
2500Vac
2500Vrms
11-7A9
100Hz
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CY7C199-25PC
Abstract: 2218 8 PIN DIP C19S 7C199-15 7C199-20 7C199-25 CY7C199 CE12U
Text: St •ss CY7C199 CYPRESS 32K x 8 Static RAM Features Functional Description • High speed — 12 ns • Fast tj>oE T he CY7C199 is a high-perform ance CM OS static RAM organized as 32,768 words by 8 bits. Easy m em ory expansion is provided by an active LO W chip enable
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CY7C199
CY7C199
300-mil-wide
00239-B
CY7C199-25PC
2218 8 PIN DIP
C19S
7C199-15
7C199-20
7C199-25
CE12U
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Untitled
Abstract: No abstract text available
Text: a iL R E L E A S E Final E le ctrica l S p e c ific a tio n s L i n t i A R LTC1344A . TECHNOLOGY Soft w a re -Se Ie c t a b Ie C a b le T erm inator February 1998 F€RTUR€S DCSCRIPTIOn • Software-Selectable Cable Termination for: RS232 V.28 RS423 (V.10)
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LTC1344A
RS232
RS423
RS422
RS485
RS449
EIA530
EIA530-A
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI88512VA-RP ELECTRONIC DESIGNS, INC 512Kx8Ruggedized Plastic Static Ram 512Kx8 Static RAM CMOS, Monolithic Features EDI's ruggedized plastic 512Kx8 SRAM allows the user to 512Kx8 bit CMOS Static capitalize on the cost advantage of using a plastic com po
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EDI88512VA-RP
512Kx8Ruggedized
512Kx8
50C/W
EDI88512VA-RP
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Nippon capacitors
Abstract: No abstract text available
Text: HB56AW1672E-A Series 16777216-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-817A Z Rev. 1.0 Aug. 20, 1997 Description The HB56AW1672E-A belongs to 8-byte DIMM (Dual in-line Memory Module) family, and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The
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HB56AW1672E-A
16777216-word
72-bit
ADE-203-817A
64-Mbit
HM5164400A)
16-bit
74LVT16244)
Nippon capacitors
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M1421
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-458DA727 8 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-458DA727 is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M SDRAM: ^¡PD4564841 are assembled.
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MC-458DA727
72-BIT
MC-458DA727
uPD4564841
M13348X)
M14211EJ1V0DS00
M1421
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Untitled
Abstract: No abstract text available
Text: HB56UW1672E Series 16777216-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-683A Z Rev. 1.1 Dec. 18, 1996 Description The HB56UW 1672E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optim ized main memory solution for 4 and 8-byte processor applications. The
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HB56UW1672E
16777216-word
72-bit
ADE-203-683A
HB56UW
1672E
64-Mbit
5164405ATT)
16-bit
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Untitled
Abstract: No abstract text available
Text: HB56UW1673E-6A/7A 16777216-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-575A Z Rev. 1.0 Dec. 24, 1996 Description The HB56UW1673E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor applications. The
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HB56UW1673E-6A/7A
16777216-word
72-bit
ADE-203-575A
HB56UW1673E
64-Mbit
5165405ATT)
16-bit
74LVT16244)
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Untitled
Abstract: No abstract text available
Text: S P S T SIGNAL PROCESSING TECHNOLOGIES P T 1 1 9 8-BIT, HIGH SPEED D/A CONVERTER FEATURES APPLICATIONS • 275 MWPS Conversion Rate - Version A • 165 MWPS Conversion Rate - Version B • Compatible with the HDAC10181 with Improved Performance • RS-343-A Compatible
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HDAC10181
RS-343-A
SPT1019AIN_
SPT1019BIN
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11DQ60
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-451AB644 1M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-451 AB644 is a 1,048,576 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 16 M S D R A M : /¿PD4516161 are assembled.
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MC-451AB644
64-BIT
MC-451AB644
uPD4516161
MC-451AB644-A10
11DQ60
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Untitled
Abstract: No abstract text available
Text: fax id: 6138 CY7C373Ì C'i- UltraLogic 64-Macrocell Flash CPLD • Pin compatible with the CY7C374i Features Functional Description • 64 macrocells in four logic blocks • 64 I/O pins • 5 dedicated inputs including 4 clock pins • In-System Reprogrammable ISR™ Flash technology
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CY7C373Ì
64-Macrocell
CY7C374i
CY7C373i
FLASH370iTM
FLASH370i
22V10,
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level shifter from TTL to CMOS
Abstract: ttl to cmos converter level shifter . CMOS to TTL cmos and ttl circuit design level shifter from TTL to CMOS bidirectional ttl cmos CD40116
Text: CD40116 Types CMOS High-Speed 8-Bit Bidirectional CMOS/TTL Interface Level Converter Features: • ■ E ight in ve rtin g channels with conversion from V n n to V c c o r Vq c to Vq d 4 V < V d d < 12 V a n d 4 V < \ ' c C < .V d d Three operating modes:
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CD40116
RCA-CD40116
l02-0
I09-II7
92CM-34547
CD40116H
level shifter from TTL to CMOS
ttl to cmos converter
level shifter . CMOS to TTL
cmos and ttl circuit design
level shifter from TTL to CMOS bidirectional
ttl cmos
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Untitled
Abstract: No abstract text available
Text: M MOTOROLA MC 34071 ,2 ,4 ,A MC 33071 ,2 ,4 ,A High Slew R ate, W ide Bandwidth, Single Supply O perational Am plifiers Quality bipolar fabrication with innovative design concepts are em ployed for the MC33071/72/74, MC34071/72/74 series of m onolithic operational
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MC33071/72/74,
MC34071/72/74
12-Bits)
b3b7253
MC34071
MC33071
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Untitled
Abstract: No abstract text available
Text: s\L [ F S i U M S I Final Electrical Specifications LTC1544 L ifm TECHNOLOGY Soft w a re -Se Ie c t a b Ie M u ltip ro to c o l Transceiver February 1998 FCRTURCS DCSCRIPTIOn • Software-Selectable Transceiver Supports: RS232, RS449, EIA530, EIA530-A, V.35, V.36, X.21
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LTC1544
RS232,
RS449,
EIA530,
EIA530-A,
NET2/102201/97)
LTC1344A
LTC1543,
LTC1543
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Untitled
Abstract: No abstract text available
Text: u f m TECHNOLOGY Softw are-Selectable M ultiprotocol Transceiver August 1996 F€ O TUR€S D C S C R IP T IO n • Software-Selectable Transceiver Supports: RS232, RS449. EIA-530, EIA-530-A, V.35, V.36, X.21 ■ NET1 and NET2 Compliant ■ Software-Selectable Cable Termination Using
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RS232,
RS449.
EIA-530,
EIA-530-A,
LT1344
LTC1343s
RS449,
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Untitled
Abstract: No abstract text available
Text: r r u r LTC1343 m TECHNOLOGY S o ftw a re -S e le cta b le M u ltip ro to c o l Transceiver FCRTURCS D C S C R IP TIO n • Software-Selectable Transceiver Supports: RS232, RS449, EIA-530, EIA-530-A, V.35, V.36, X.21 ■ NET1 and NET2 Compliant ■ Software-Selectable Cable Termination Using
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LTC1343
RS232,
RS449,
EIA-530,
EIA-530-A,
LTC1344
LTC1343s
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Untitled
Abstract: No abstract text available
Text: THMY7232F0EG-80 TO SHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The TH M Y 7232F0EG is a 33,554,432-w ord by 72-bit synchronous dynam ic RAM m odule co n sistin g o f 18 TC59SM 704FT DRAM s and PLL /R egisters on a printed circuit board.
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THMY7232F0EG-80
432-WORD
72-BIT
7232F0EG
432-w
TC59SM
704FT
72-bit
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