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    CC OWV W Search Results

    CC OWV W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74AC11086D Texas Instruments Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11244DW Texas Instruments Octal Buffers/Drivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11245DW Texas Instruments Octal Bus Transceivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC16244DGGR Texas Instruments 16-Bit Buffers And Line Drivers With 3-State Outputs 48-TSSOP -40 to 85 Visit Texas Instruments Buy
    74ACT11000DR Texas Instruments Quadruple 2-Input Positive-NAND Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy

    CC OWV W Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC2100

    Abstract: 12ID 2j 20T
    Text: 5 /U 3 y N P N ie ?*5 /? l/7 ls-î& h 7 y 5 > Z SILICON NPN EPITAXIAL PLANAR TRANSISTC O 2.0~ 30 M Hzìf SSB « S * « * « O 2.0~30M H z SSB A pplications Linear High L o w Supply (fë«EES8Sffl ) Power V oltage Amplifier Use) • 2 8M Hz-C5 5 W (P E P « $ ffitJ


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    28MHz -28MHz VCC-12 2SC2100 12ID 2j 20T PDF

    HM10474

    Abstract: 43583 HM10474-10
    Text: HM10474-8,HM10474-10 1024-word x 4-bit Fully Decoded Random Access Memory The H M 10474 is E C L 10k compatible, 1024-words x 4-bit, read write, random access memory developed for high speed systems such as scratch pads and control/buffer storages. The fabrication process is the Hitachi's low capacitance, oxide


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    HM10474-8 HM10474-10 1024-word 1024-words HM10474 cerdip-24pin HM10474-10 43583 PDF

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94_ FEATURES * 200 Volt V DS * fW r io n * Low threshold APPLICATIONS * Telephone handsets ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 200


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    ZVNL120A -125mA PDF

    cd 2003 gp

    Abstract: 2SC2100 i22d 121 122 opto 2-13B1A
    Text: TOSHIBA •CDISCRETE/OPTO> 9097250 DE j T C H 7a5 Q Q D D n 34 D TO SHI BA <DI S C R E T E / O P T O > 39C 0 1 9 3 ^ SEMICONDUCTOR TO SHIBA T RA N SISTO R 2 S C 2 1 00 N P N E P I T A X I A L PLANAR U lt TECHNICAL DATA O * f S IL IC O N ~ 3 0 M H z iff S S B i I Ü 8 B Î i # S f f l


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    00Dlci34 2SC2100 30MHz 28MHz SEMfgtt-30dBfelT-e-i-o 2SC2100 Vcc-12-SV TC-25Â cd 2003 gp i22d 121 122 opto 2-13B1A PDF

    CY7B185

    Abstract: cy7b185-12pc cy7b185-15pc 624a2 A10C CY7B185-10DC CY7B185-9VC i10121
    Text: CY7B185 CYPRESS SEMICONDUCTOR Functional Description BiCMOS for optimum speed/power Ultra high speed — 9 ns Low active power — 750 mW Low standby power — 250 mW TTL-compatible inputs and outputs Capable o f w ithstanding greater than 2001V electrostatic discharge


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    CY7B185 67B185â 10DMB 28-Lead 300-Mil) CY7B185â 10LMB 28-Pin CY7B185 cy7b185-12pc cy7b185-15pc 624a2 A10C CY7B185-10DC CY7B185-9VC i10121 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY IDT7MB4065 256K x 20 BiCMOS/CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 256K x 20 BiCMOS/CMOS static RAM module The IDT7MB4065 is a 256K x 20 BiCMOS/CMOS static RAM module constructed on an epoxy laminate FR-4 sub­


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    IDT7MB4065 48-pin IDT7MB4065 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TLP560J TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC TLP560J TRIAC DRIVER U nit in mm PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE 3 2 1 T l Tf IT SOLID STATE RELAY 3 TTJ—E 4 The TOSHIBA TLP560J consists of a photo-triac optically coupled to a gallium arsenide infrared em itting diode in a six lead plastic DIP


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    TLP560J TLP560J 100mA UL1577, E67349 2500Vac 2500Vrms 11-7A9 100Hz PDF

    CY7C199-25PC

    Abstract: 2218 8 PIN DIP C19S 7C199-15 7C199-20 7C199-25 CY7C199 CE12U
    Text: St •ss CY7C199 CYPRESS 32K x 8 Static RAM Features Functional Description • High speed — 12 ns • Fast tj>oE T he CY7C199 is a high-perform ance CM OS static RAM organized as 32,768 words by 8 bits. Easy m em ory expansion is provided by an active LO W chip enable


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    CY7C199 CY7C199 300-mil-wide 00239-B CY7C199-25PC 2218 8 PIN DIP C19S 7C199-15 7C199-20 7C199-25 CE12U PDF

    Untitled

    Abstract: No abstract text available
    Text: a iL R E L E A S E Final E le ctrica l S p e c ific a tio n s L i n t i A R LTC1344A . TECHNOLOGY Soft w a re -Se Ie c t a b Ie C a b le T erm inator February 1998 F€RTUR€S DCSCRIPTIOn • Software-Selectable Cable Termination for: RS232 V.28 RS423 (V.10)


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    LTC1344A RS232 RS423 RS422 RS485 RS449 EIA530 EIA530-A PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI88512VA-RP ELECTRONIC DESIGNS, INC 512Kx8Ruggedized Plastic Static Ram 512Kx8 Static RAM CMOS, Monolithic Features EDI's ruggedized plastic 512Kx8 SRAM allows the user to 512Kx8 bit CMOS Static capitalize on the cost advantage of using a plastic com po­


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    EDI88512VA-RP 512Kx8Ruggedized 512Kx8 50C/W EDI88512VA-RP PDF

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56AW1672E-A Series 16777216-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-817A Z Rev. 1.0 Aug. 20, 1997 Description The HB56AW1672E-A belongs to 8-byte DIMM (Dual in-line Memory Module) family, and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The


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    HB56AW1672E-A 16777216-word 72-bit ADE-203-817A 64-Mbit HM5164400A) 16-bit 74LVT16244) Nippon capacitors PDF

    M1421

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-458DA727 8 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-458DA727 is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M SDRAM: ^¡PD4564841 are assembled.


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    MC-458DA727 72-BIT MC-458DA727 uPD4564841 M13348X) M14211EJ1V0DS00 M1421 PDF

    Untitled

    Abstract: No abstract text available
    Text: HB56UW1672E Series 16777216-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-683A Z Rev. 1.1 Dec. 18, 1996 Description The HB56UW 1672E belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been developed an optim ized main memory solution for 4 and 8-byte processor applications. The


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    HB56UW1672E 16777216-word 72-bit ADE-203-683A HB56UW 1672E 64-Mbit 5164405ATT) 16-bit PDF

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56UW1672E-A Series 16777216-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-822A Z Rev. 1.0 Sep. 17, 1997 Description The HB56UW1672E-A belongs to 8-byte DIMM (Dual in-line Memory Module) family, and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The


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    HB56UW1672E-A 16777216-word 72-bit ADE-203-822A 64-Mbit HM5164405 16-bit 74LVT16244) Nippon capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: S P S T SIGNAL PROCESSING TECHNOLOGIES P T 1 1 9 8-BIT, HIGH SPEED D/A CONVERTER FEATURES APPLICATIONS • 275 MWPS Conversion Rate - Version A • 165 MWPS Conversion Rate - Version B • Compatible with the HDAC10181 with Improved Performance • RS-343-A Compatible


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    HDAC10181 RS-343-A SPT1019AIN_ SPT1019BIN PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 6138 CY7C373Ì C'i- UltraLogic 64-Macrocell Flash CPLD • Pin compatible with the CY7C374i Features Functional Description • 64 macrocells in four logic blocks • 64 I/O pins • 5 dedicated inputs including 4 clock pins • In-System Reprogrammable ISR™ Flash technology


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    CY7C373Ì 64-Macrocell CY7C374i CY7C373i FLASH370iTM FLASH370i 22V10, PDF

    level shifter from TTL to CMOS

    Abstract: ttl to cmos converter level shifter . CMOS to TTL cmos and ttl circuit design level shifter from TTL to CMOS bidirectional ttl cmos CD40116
    Text: CD40116 Types CMOS High-Speed 8-Bit Bidirectional CMOS/TTL Interface Level Converter Features: • ■ E ight in ve rtin g channels with conversion from V n n to V c c o r Vq c to Vq d 4 V < V d d < 12 V a n d 4 V < \ ' c C < .V d d Three operating modes:


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    CD40116 RCA-CD40116 l02-0 I09-II7 92CM-34547 CD40116H level shifter from TTL to CMOS ttl to cmos converter level shifter . CMOS to TTL cmos and ttl circuit design level shifter from TTL to CMOS bidirectional ttl cmos PDF

    Untitled

    Abstract: No abstract text available
    Text: M MOTOROLA MC 34071 ,2 ,4 ,A MC 33071 ,2 ,4 ,A High Slew R ate, W ide Bandwidth, Single Supply O perational Am plifiers Quality bipolar fabrication with innovative design concepts are em ployed for the MC33071/72/74, MC34071/72/74 series of m onolithic operational


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    MC33071/72/74, MC34071/72/74 12-Bits) b3b7253 MC34071 MC33071 PDF

    Untitled

    Abstract: No abstract text available
    Text: s\L [ F S i U M S I Final Electrical Specifications LTC1544 L ifm TECHNOLOGY Soft w a re -Se Ie c t a b Ie M u ltip ro to c o l Transceiver February 1998 FCRTURCS DCSCRIPTIOn • Software-Selectable Transceiver Supports: RS232, RS449, EIA530, EIA530-A, V.35, V.36, X.21


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    LTC1544 RS232, RS449, EIA530, EIA530-A, NET2/102201/97) LTC1344A LTC1543, LTC1543 PDF

    Untitled

    Abstract: No abstract text available
    Text: u f m TECHNOLOGY Softw are-Selectable M ultiprotocol Transceiver August 1996 F€ O TUR€S D C S C R IP T IO n • Software-Selectable Transceiver Supports: RS232, RS449. EIA-530, EIA-530-A, V.35, V.36, X.21 ■ NET1 and NET2 Compliant ■ Software-Selectable Cable Termination Using


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    RS232, RS449. EIA-530, EIA-530-A, LT1344 LTC1343s RS449, PDF

    Untitled

    Abstract: No abstract text available
    Text: r r u r LTC1343 m TECHNOLOGY S o ftw a re -S e le cta b le M u ltip ro to c o l Transceiver FCRTURCS D C S C R IP TIO n • Software-Selectable Transceiver Supports: RS232, RS449, EIA-530, EIA-530-A, V.35, V.36, X.21 ■ NET1 and NET2 Compliant ■ Software-Selectable Cable Termination Using


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    LTC1343 RS232, RS449, EIA-530, EIA-530-A, LTC1344 LTC1343s PDF

    Untitled

    Abstract: No abstract text available
    Text: THMY7232F0EG-80 TO SHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The TH M Y 7232F0EG is a 33,554,432-w ord by 72-bit synchronous dynam ic RAM m odule co n sistin g o f 18 TC59SM 704FT DRAM s and PLL /R egisters on a printed circuit board.


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    THMY7232F0EG-80 432-WORD 72-BIT 7232F0EG 432-w TC59SM 704FT 72-bit PDF

    CMOS 4000B series device

    Abstract: DAC87H-CBI-V MIL-STD-863 2010 DAC85 DAC87 DAC87H DAC85H DAC85H-CBI-V DAC85H-CBI-V-BI
    Text: DAC85H DAC87H B U R R -B R O W N I B S ] MILITARY VERSION AVAILABLE DESCRIPTION T hese m onolithic digital-to-analog converters are p in-for-pin eq u ivalent to the in d u stry sta n d ard DAC85 and DA C87 first introduced by B urr-B row n. T heir single-chip design includes the ou tp u t am plifier


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    DAC85H DAC87H 12-Bit DAC85 DAC87 1200ft 255ft 1455ft. CMOS 4000B series device DAC87H-CBI-V MIL-STD-863 2010 DAC87H DAC85H-CBI-V DAC85H-CBI-V-BI PDF

    RF2401

    Abstract: No abstract text available
    Text: RF2401 MICRO-DEVICES LOW NOISE AMPLIFIER/MIXER T y p ic a l A p p lic a tio n s • UHF Digital and Analog Receivers Commercial and Consumer Systems • Digital Communication Systems Portable Battery Powered Equipment • Spread Spectrum Communication Systems


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    RF2401 RF2401 PDF