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    CC OWV W ST Search Results

    CC OWV W ST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74AC11086D Texas Instruments Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11244DW Texas Instruments Octal Buffers/Drivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC11245DW Texas Instruments Octal Bus Transceivers 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74AC16244DGGR Texas Instruments 16-Bit Buffers And Line Drivers With 3-State Outputs 48-TSSOP -40 to 85 Visit Texas Instruments Buy
    74ACT11000DR Texas Instruments Quadruple 2-Input Positive-NAND Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy

    CC OWV W ST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


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    PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    HM10474

    Abstract: 43583 HM10474-10
    Text: HM10474-8,HM10474-10 1024-word x 4-bit Fully Decoded Random Access Memory The H M 10474 is E C L 10k compatible, 1024-words x 4-bit, read write, random access memory developed for high speed systems such as scratch pads and control/buffer storages. The fabrication process is the Hitachi's low capacitance, oxide


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    PDF HM10474-8 HM10474-10 1024-word 1024-words HM10474 cerdip-24pin HM10474-10 43583

    2SC2100

    Abstract: 12ID 2j 20T
    Text: 5 /U 3 y N P N ie ?*5 /? l/7 ls-î& h 7 y 5 > Z SILICON NPN EPITAXIAL PLANAR TRANSISTC O 2.0~ 30 M Hzìf SSB « S * « * « O 2.0~30M H z SSB A pplications Linear High L o w Supply (fë«EES8Sffl ) Power V oltage Amplifier Use) • 2 8M Hz-C5 5 W (P E P « $ ffitJ


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    PDF 28MHz -28MHz VCC-12 2SC2100 12ID 2j 20T

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TLP560J TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC TLP560J TRIAC DRIVER U nit in mm PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE 3 2 1 T l Tf IT SOLID STATE RELAY 3 TTJ—E 4 The TOSHIBA TLP560J consists of a photo-triac optically coupled to a gallium arsenide infrared em itting diode in a six lead plastic DIP


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    PDF TLP560J TLP560J 100mA UL1577, E67349 2500Vac 2500Vrms 11-7A9 100Hz

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI88512VA-RP ELECTRONIC DESIGNS, INC 512Kx8Ruggedized Plastic Static Ram 512Kx8 Static RAM CMOS, Monolithic Features EDI's ruggedized plastic 512Kx8 SRAM allows the user to 512Kx8 bit CMOS Static capitalize on the cost advantage of using a plastic com po­


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    PDF EDI88512VA-RP 512Kx8Ruggedized 512Kx8 50C/W EDI88512VA-RP

    CY7C199-25PC

    Abstract: 2218 8 PIN DIP C19S 7C199-15 7C199-20 7C199-25 CY7C199 CE12U
    Text: St •ss CY7C199 CYPRESS 32K x 8 Static RAM Features Functional Description • High speed — 12 ns • Fast tj>oE T he CY7C199 is a high-perform ance CM OS static RAM organized as 32,768 words by 8 bits. Easy m em ory expansion is provided by an active LO W chip enable


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    PDF CY7C199 CY7C199 300-mil-wide 00239-B CY7C199-25PC 2218 8 PIN DIP C19S 7C199-15 7C199-20 7C199-25 CE12U

    Untitled

    Abstract: No abstract text available
    Text: a iL R E L E A S E Final E le ctrica l S p e c ific a tio n s L i n t i A R LTC1344A . TECHNOLOGY Soft w a re -Se Ie c t a b Ie C a b le T erm inator February 1998 F€RTUR€S DCSCRIPTIOn • Software-Selectable Cable Termination for: RS232 V.28 RS423 (V.10)


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    PDF LTC1344A RS232 RS423 RS422 RS485 RS449 EIA530 EIA530-A

    Untitled

    Abstract: No abstract text available
    Text: r r u r LTC1343 m TECHNOLOGY S o ftw a re -S e le cta b le M u ltip ro to c o l Transceiver FCRTURCS D C S C R IP TIO n • Software-Selectable Transceiver Supports: RS232, RS449, EIA-530, EIA-530-A, V.35, V.36, X.21 ■ NET1 and NET2 Compliant ■ Software-Selectable Cable Termination Using


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    PDF LTC1343 RS232, RS449, EIA-530, EIA-530-A, LTC1344 LTC1343s

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56AW1672E-A Series 16777216-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-817A Z Rev. 1.0 Aug. 20, 1997 Description The HB56AW1672E-A belongs to 8-byte DIMM (Dual in-line Memory Module) family, and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The


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    PDF HB56AW1672E-A 16777216-word 72-bit ADE-203-817A 64-Mbit HM5164400A) 16-bit 74LVT16244) Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: u f m TECHNOLOGY Softw are-Selectable M ultiprotocol Transceiver August 1996 F€ O TUR€S D C S C R IP T IO n • Software-Selectable Transceiver Supports: RS232, RS449. EIA-530, EIA-530-A, V.35, V.36, X.21 ■ NET1 and NET2 Compliant ■ Software-Selectable Cable Termination Using


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    PDF RS232, RS449. EIA-530, EIA-530-A, LT1344 LTC1343s RS449,

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56UW1672E-A Series 16777216-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-822A Z Rev. 1.0 Sep. 17, 1997 Description The HB56UW1672E-A belongs to 8-byte DIMM (Dual in-line Memory Module) family, and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The


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    PDF HB56UW1672E-A 16777216-word 72-bit ADE-203-822A 64-Mbit HM5164405 16-bit 74LVT16244) Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: S P S T SIGNAL PROCESSING TECHNOLOGIES P T 1 1 9 8-BIT, HIGH SPEED D/A CONVERTER FEATURES APPLICATIONS • 275 MWPS Conversion Rate - Version A • 165 MWPS Conversion Rate - Version B • Compatible with the HDAC10181 with Improved Performance • RS-343-A Compatible


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    PDF HDAC10181 RS-343-A SPT1019AIN_ SPT1019BIN

    Untitled

    Abstract: No abstract text available
    Text: fax id: 6138 CY7C373Ì C'i- UltraLogic 64-Macrocell Flash CPLD • Pin compatible with the CY7C374i Features Functional Description • 64 macrocells in four logic blocks • 64 I/O pins • 5 dedicated inputs including 4 clock pins • In-System Reprogrammable ISR™ Flash technology


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    PDF CY7C373Ì 64-Macrocell CY7C374i CY7C373i FLASH370iTM FLASH370i 22V10,

    level shifter from TTL to CMOS

    Abstract: ttl to cmos converter level shifter . CMOS to TTL cmos and ttl circuit design level shifter from TTL to CMOS bidirectional ttl cmos CD40116
    Text: CD40116 Types CMOS High-Speed 8-Bit Bidirectional CMOS/TTL Interface Level Converter Features: • ■ E ight in ve rtin g channels with conversion from V n n to V c c o r Vq c to Vq d 4 V < V d d < 12 V a n d 4 V < \ ' c C < .V d d Three operating modes:


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    PDF CD40116 RCA-CD40116 l02-0 I09-II7 92CM-34547 CD40116H level shifter from TTL to CMOS ttl to cmos converter level shifter . CMOS to TTL cmos and ttl circuit design level shifter from TTL to CMOS bidirectional ttl cmos

    Untitled

    Abstract: No abstract text available
    Text: THMY7232F0EG-80 TO SHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The TH M Y 7232F0EG is a 33,554,432-w ord by 72-bit synchronous dynam ic RAM m odule co n sistin g o f 18 TC59SM 704FT DRAM s and PLL /R egisters on a printed circuit board.


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    PDF THMY7232F0EG-80 432-WORD 72-BIT 7232F0EG 432-w TC59SM 704FT 72-bit

    TC59WM815BFT

    Abstract: 674h AN 7580
    Text: TOSHIBA THLD25N01 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N01B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM815BFT DRAMs on a printed circuit board.


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    PDF THLD25N01 432-WORD 64-BIT THLD25N01B TC59WM815BFT 64-bit 674h AN 7580

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THLD25N01 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N01B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM815BFT DRAMs on a printed circuit board.


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    PDF THLD25N01 432-WORD 64-BIT THLD25N01B TC59WM815BFT 64-bit

    7MBP25RU2A120

    Abstract: marking code C1L 100DC AC2500 ED-4701 H04-004 HCPL-4504 MT5F12959 block diagram of electric cooker
    Text: This m aterial and the inform ation herein is the p ro p e rty o f Fuji E lectric D evice Technology C o., Ltd. They shall be neither reproduced, copied .lent, or disclosed in any w ay w hatsoever for the use of any third party nor used fo r the m anufacturing purposes w ithou t the exp ress w ritte n consent of


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    PDF H04-004 7MBP25RU2A120 marking code C1L 100DC AC2500 ED-4701 H04-004 HCPL-4504 MT5F12959 block diagram of electric cooker

    Untitled

    Abstract: No abstract text available
    Text: Final Electrical Specifications LTC1343 S o ftw a re -S e le cta b le M u ltip ro to c o l Transceiver u im TECHNOLOGY O c to b e r 1996 F€flTUR€S DCSCRICTIOn • Software-Selectable Transceiver Supports: RS232, RS449, ElA-530, EIA-53Q-A, V.35, V.36, X.21


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    PDF LTC1343 RS232, RS449, ElA-530, EIA-53Q-A, LTC1343s support32 RS485 LTC1334 RS232/RS485

    Q20P010

    Abstract: Q20M100 carry look ahead adder Q20080 Q20P025 Q20025 vernier Q20000 Q20004 Q20010
    Text: D EV IC E SP EC IFIC A TIO N LOGIC ARRAYS Q20000 “TURBO” ECL/TTL Q20000 FEATURES Figure 6. Q20080 Die • • • • • • • • • • Up to 18,777 gates, channelless architecture 100 ps equivalent gate delays Low power 0.5-1.0 mW/gate 10K, 10KH, 10OK ECL and mixed ECL/TTL capability


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    PDF Q20000 Q20000 0Q03RL Q20P010 Q20M100 carry look ahead adder Q20080 Q20P025 Q20025 vernier Q20004 Q20010

    Untitled

    Abstract: No abstract text available
    Text: 1 MU9C3480L LANCAM i M USIC S E M I C O N D U C T O R S ;T DRAFT DAT/ 11 DISTINCTIVE CHARACTERISTICS 256 x 64-bit CMOS Content-addressable Memory CAM with 16-bit I/O for compatibility with the MU9C5480L Dual configuration register set (Control, Segment Control, Mask Register 1, Address Register, and


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    PDF MU9C3480L 64-bit 16-bit MU9C5480L

    Untitled

    Abstract: No abstract text available
    Text: 1 MU9C 3480A LANCAM i M USIC S E M I C O N D U C T O R S ;T DRAFT DAT/ 11 DISTINCTIVE CHARACTERISTICS 256 x 64-bit CMOS Content-addressable Memory CAM with 16-bit I/O for compatibility with the MU9C5480 New faster compare speed of 70 ns. Dual configuration register set (Control, Segment


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    PDF 64-bit 16-bit MU9C5480

    2480L

    Abstract: No abstract text available
    Text: APPLICATION BENEFITS DISTINCTIVE CHARACTERISTICS The 2048 x 64-bit LANCAM facilitates numerous operations: > > > > New speed grade allows processing of both DA and SA within 560 ns, equivalent to 111, 10 Base-T or 11,100 Base-T Ethernet ports Expanded powerful instruction set for any list


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    PDF 64-bit 16-bit 2480L