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    MJ10025

    Abstract: No abstract text available
    Text: 02E 0 0 5 2 0 6 1 1 5 9 50 MICROSEMI CORP/POWER □E D T - ^ 3 ' Z 9 tÊ JtH SISO □ □ Q Q 52Q CCC9002 'r X C T TECHNOLOGY 10 A, 950 V, NPN Darlington Power Transistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum


    OCR Scan     		CCC9002 emitter-15-mil thickness-12 PTC9000/MJ10024 PTC9001/MJ10025 PTC9002 MJ10025 PDF