APT38N60BC6
Abstract: APT38N60B
Text: APT38N60BC6 APT38N60SC6 600V COOLMOS 38A 0.099Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT38N60BC6
APT38N60SC6
O-247
APT38N60B
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ce 2826 ic
Abstract: No abstract text available
Text: APT38N60BC6 APT38N60SC6 600V COOLMOS 38A 0.099 Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT38N60BC6
APT38N60SC6
O-247
ce 2826 ic
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Untitled
Abstract: No abstract text available
Text: IOP 480 Data Book IOP 480 Data Book Revision 2.0 July 2000 Website: http://www.plxtech.com Email: apps@plxtech.com Phone: 408 774-9060 800 759-3735 Fax: 408 774-2169 2000 PLX Technology, Inc. All rights reserved. PLX Technology, Inc. retains the right to make changes to this product at any time, without notice. Products may
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480-elf
Index-36
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ce 2826
Abstract: No abstract text available
Text: INTEGRATED 47E D DE VIC E Integrated Device Technology, Inc. • MÔ2S771 G0102S4 SUBSYSTEMS “FLEXI-PAK ” FAMILY 32K x 16/32K x 16 CMOS SRAM/EEPROM MODULE T ■ IDT PRELIMINARY IDT7M7005 FEATURES: DESCRIPTION: • T h e ID T 7 M 70 05 is a high-speed, high-density C M O S
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2S771
G0102S4
16/32K
IDT7M7005
00102b3
ce 2826
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ce 2826 ic
Abstract: No abstract text available
Text: O rdering num ber: EN 2826 Jo.2826 HPA100R NPN Triple Diffused Planar Silicon Composite Transistor Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications F e a tu re s • Highspeed tf typ = 100ns • High breakdown voltage (Vcbo = 1500V)
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HPA100R
100ns)
cH707k>
GD2G44G
ce 2826 ic
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ce 2826 ic
Abstract: E723 ce 2826
Text: SUBSYSTEMS “FLEXI-PAK ” FAMILY 32K x 16/32K x 16 CMOS SRAM/EEPROM MODULE y Integrated Devlc e Technology, Inc. DESCRIPTION: FEATURES: • H igh -density C M O S m odu le w ith S R A M an d E E P R O M m em ory on -board • • M e m b e r of th e T h e ID T 7 M 7 0 0 5 is a hig h -s p e e d , high-density C M O S
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16/32K
IDT7M7005
200mV
ce 2826 ic
E723
ce 2826
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2SC2802
Abstract: 2808 transistor n2818
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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Te-25
2SC2802
2808 transistor
n2818
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173116
Abstract: No abstract text available
Text: Catalog 65816 A M P M O D U .025 [0.64] Square Interconnection System Is su e d 5 -9 5 B oard -to-B oard , W ire-to -B oard A M P Sin g le -R ow Linear ( A S L ) Connectors (W ire-to-Board, W ire-to-W ire) Features • W ire -to -w ire and w ire -to boa rd co nne ctors
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D7T731E
173116
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32KX8
Abstract: No abstract text available
Text: P'S dt) Integrated Devi ce Technology» Inc. SUBSYSTEMS “FLEXI-PAK ” FAMILY 32K x 1 6/32K x 1 6 CMOS SRAM/EEPROM MODULE PRELIMINARY IDT7M7005 FEATURES: DESCRIPTION: • High-density CMOS module with SRAM and EEPROM memory on-board • M em ber of the S u b syste m s "F le xi-P a k” Fam ily of
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16/32K
IDT7M7005
66-pin
32KX8
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ce 2826 ic
Abstract: ce 2826 A100R HPA100R
Text: Ordering number : EN 2826 HP A 100R Very High-Definition Color Display, Horizontal Deflection Output Applications NPN Triple Diffused Planar Silicon Composite Transistor Features • Highspeed tf typ= 100ns • High breakdown voltage (V^ bo —1500V) • High-speed damper diode placed in one package (tfr —0.2ps max)
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A100R
100ns)
ce 2826 ic
ce 2826
A100R
HPA100R
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TRIMMER capacitor 160 pF
Abstract: transistor BC337 TRIMMER capacitor 10-40 pf 22 pf trimmer capacitor 1n4007 mttf linear amplifier 470-860 Zener diode 9.1 470-860 mhz Power amplifier 5 w capacitor c3b TPV5055B
Text: MOTOROLA SC XSTRS/R F b3L7254 O I D Q W fc^E J> 037 HOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Lin ear P o w er TVansistor . . . d e sig n e d fo r o u tp u t sta g e s in B and IV & V T V tra n sm itte r am plifiers. Internal m a tc h in g o f b o th in p u t a nd o u tp u t a lo n g w ith u se o f a p u s h -p u ll p a c k a g e
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b3t72SM
100A101JP50
1N4007
BC337
BD135
TPV5055B
TRIMMER capacitor 160 pF
transistor BC337
TRIMMER capacitor 10-40 pf
22 pf trimmer capacitor
1n4007 mttf
linear amplifier 470-860
Zener diode 9.1
470-860 mhz Power amplifier 5 w
capacitor c3b
TPV5055B
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Untitled
Abstract: No abstract text available
Text: 3875081 G E S O L ID 01E STATE 19 79 4 Optoelectronic Specifications _ H A RR IS SEMICOND SECTOR 37E T -4 1 -7 3 D 4302271 002725b 1mm Aperture Photon Coupled Interrupter Module H22B1 ,H22B2 ,H22B3 T he G E Solid S tate H22B In terru p ter M odule is a gallium arse
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002725b
H22B1
H22B2
H22B3
S-42662
92CS-429S1
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ce 2826 ic
Abstract: transistor mje 2050 transistor 1005 oj motorola 2676 10E18
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC5001T1 Low Voltage Bias Stabilizer with Enable • Maintains Stable Bias Current in N-Type Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component Without Use of Emitter Ballast
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MDC5001T1
MDC5000
ce 2826 ic
transistor mje 2050
transistor 1005 oj
motorola 2676
10E18
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BD 135 transistor
Abstract: zt173
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A dvance Information The RF Line MRF15090 NPN Silicon RF Power Transistor D e sig n e d fo r 2 6 vo lts m icro w a ve la rg e -s ig n a l, c o m m o n em itter, cla s s A and c la s s A B lin e a r a m p lifie r a p p lic a tio n s in in d u s tria l a n d c o m m e rc ia l F M /A M
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BD136)
MRF15090
BD 135 transistor
zt173
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ce 2826 ic
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC5001T1 Low Voltage Bias Stabilizer w ith Enable • Maintains Stable Bias Current in N-Type Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component Without Use of Emitter Ballast
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MDC5001T1
MDC5000
ce 2826 ic
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K2134
Abstract: IN3344 IN3324 1N4564 1N3305 E5450 1N2804 4556 AD 8 PIN
Text: 1N2804 thru 1N2846 1N3305thru 1N3350 1N4549thru 1N4556 1N4557thru 1N4564 6.8V thru 200V C a se 54 (^ ) M O T O R O L A 6.8V thru 200V (C a s e 58) 3.9V thru 7.5V (C a se 58) ZENER DIODES 3.9V thru 7.5V (C a s e 54) U n its are a v a ila b le w ith an od e-to *case and cath o d e -to -case
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1N2804
1N2846
1N3305thru
1N3350
1N4549thru
1N4556
1N4557thru
1N4564
K2134
IN3344
IN3324
1N4564
1N3305
E5450
4556 AD 8 PIN
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Untitled
Abstract: No abstract text available
Text: AMP Catalog 124153 Blindmate Connectors Compilation Issued 3-96 Blindmate Hybrid Mini-Drawer Connectors (Continued) 6-Position (4-Signal and 2-Power), Receptacle Assemblies 33.00 Part No. 178755-1 Material and Finish: Housing— Thermoplastic, 94V-0 rated,
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100mQ,
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75c189a
Abstract: ds14c88a 75c189 S-232-C
Text: SN65C189, SN65C189A, SN75C189, SN75C189A QUADRUPLE LOW POWER LINE RECEIVERS D 3 1 4 4 . OCTOBER 1 9 8 6 - REVISED JULY 1 9 9 0 D , D B . OR N P AC K A G E Meets Standard EIA-232-D Revision of RS-232-C (TO P VIE W ) Low Supply Current . . . 4 2 0 />A Typ
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SN65C189,
SN65C189A,
SN75C189,
SN75C189A
EIA-232-D
RS-232-C)
MIL-STD-883C.
75189/SN
5189A
1489/M
75c189a
ds14c88a
75c189
S-232-C
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maintenance manual 565435-5
Abstract: control valve SOCKET HEAD CAP SCREWS hhfl
Text: t í j c a / Electronics 408-9515 Instruction Sheet Ribbon Cable Notcher 854449-[ ] CABLE 31 MAY 01 CONNECTOR Rev B NOTCH mm [in.] RIBBON CABLE NOTCHER SIZE (Number of Positions) WIDTH OF WEB REMOVED 2-28 1.27 [.050] AMPMODU Connector, MT, MTE, MTA 2-28
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36-05-019
Abstract: Renault 36-05-019 proner comatel P7010870862 35r1 3605019 C0013 PRONER 8 mm comatel 386
Text: B C F P A R A M ETR ES COTE DONNEE A T I T R E I N D I C A T I F NON SOUMI S A MSP (POUR I NFO SUR ENCOMBREMENT P I E C E ) 10 S I G L E PRONER DE SERTISSAGE SERTISSAGE DU CUIVRE Ca t a 1o g u e 3 T 3 / 3R3S / 3R4S 8 * DEVELOPPE 9 . 8 = h 0 . 2 POUR I NFORMAT I ON
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EROO-0349-04
36-05-019
Renault 36-05-019
proner comatel
P7010870862
35r1
3605019
C0013
PRONER 8 mm
comatel 386
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PDF
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Untitled
Abstract: No abstract text available
Text: GENNUM G F9 1 0 1 High Perform ance Multirate Digital Filter C O R P O R A T I O N PRELIMINARY DATA SHEET FEATURES DESCRIPTION • 40 MHz computation, max. I/P & O/P data rate The GF9101 is a hig h p e rfo rm a n ce m u ltira te d ig ita l filter • 12 tap cells
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GF9101
12-tap
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74LS29
Abstract: 54LS29
Text: SN54LS299, SN54S299, SN74LS299, SN74S299 8-BIT UNIVERSAL SHIFT/STORAGE REGISTERS M ARCH 1974 - R E V IS E D M A R C H 1 9 8 8 S N 54LS 29 9, SN 54S299 . . . J OR W PACKAGE SN 74LS29 9. SN 74S299 . . . DW OR N PACKAGE Multiplexed Inputs/Outputs Provide Improved Bit Density
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SN54LS299,
SN54S299,
SN74LS299,
SN74S299
SN54LS323
SN74LS323
54S299
74LS29
74S299
7526S
54LS29
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CSR 6030
Abstract: MD 7144 md 8243 CSR 8311 ISO 8015 tolerance CSR 3012
Text: I CSR13 MIL-C-39003/01 Solid Tantalum Capacitors M a llo r Y GENERAL SPECIFICATIONS Hermetically Sealed Graded Failure Rates DC Leakage: At +25°C - See Table Limit. At +85°C - 10 x Table Limit. At +125°C - 12.5 x Table Limit. Capacitance Change Maximum:
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CSR13
MIL-C-39003/01)
13J155K*
CSRI3JI55M*
CSRI3JI85K*
13J225K*
13J225M*
CSRI3J275K*
CSRI3J335K*
CSRI3J335M*
CSR 6030
MD 7144
md 8243
CSR 8311
ISO 8015 tolerance
CSR 3012
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PDF
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LA 7809
Abstract: HE1402 LA 7873 LA 7814 ET 7808 696-4 7402, 7404, 7408, 7432, 7400 LA 7804 ON HE14 7404 7408 7432
Text: Connecteurs pour Terminaux Electroniques ? HE 1 4 - H E 13 Conformes à la norme NFC 93401 CTE HE 140-2 et CTE HE 130-2 Programme carte à fils simple rangée embases et fiches 90° à sorties auto-dénudantes .îfiiâiRinc ‘i • »i l ' i f * - - 'i & m & s
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14-HE
S-17526
CH-9323
LA 7809
HE1402
LA 7873
LA 7814
ET 7808
696-4
7402, 7404, 7408, 7432, 7400
LA 7804 ON
HE14
7404 7408 7432
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PDF
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