Untitled
Abstract: No abstract text available
Text: m 2N5781 \ \ SILICON PNP TRANSISTOR DESCRIPTION: The 2N5781 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 3.5 A Ib 1.0 A V -65 V ce P diss 10 W @ T C = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 17.5 °C/W
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2N5781
2N5781
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Untitled
Abstract: No abstract text available
Text: m 2N5784 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N5784 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS V lc 3.5 A Ib 1.0 A 65 V ce P diss 10 W @ T C = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 17.5 °C/W
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2N5784
2N5784
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TO1C
Abstract: 2N2188 IN404 2N2482 IN392 2N4040/A 2N994 INTEX 2NB642 2N3866
Text: discrete devices SEMICONDUCTORS j e m it r o n • Semitronics Corp. silicon transistors T '31'û l 4äbTS4b 00002^1 7 I INTEX/ SE MITRONICS CORP 27E D UHF/VHF power transistors 7 ~ - 3 7 - o / NPN type -7H ÌÌK 65 « V CE 5.ÍÍÍ3553 6b :'*K3 6« 65 ZN3T33 65
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2K337S
2K3632
2N3733
T0-60
TQ-60
2N3866
N3924
2N392B
-2N3927
2N401Ã
TO1C
2N2188
IN404
2N2482
IN392
2N4040/A
2N994
INTEX
2NB642
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Untitled
Abstract: No abstract text available
Text: 57 C4500-40/50/65/80 High Density First-in First-out FIFO 256x9 CMOS Memory A d van ce Inform ation DISTINCTIVE CHARACTERISTICS RAM based FIFO 256x9 organization Cycle times of 50/65/80/100 nanoseconds Asynchronous and simultaneous writes and reads Low power consumption - 80 mA maximum
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C4500-40/50/65/80
256x9
57C4500
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Untitled
Abstract: No abstract text available
Text: m 2N3499 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3499 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 300 mA V ce 100 V P diss 5.0 W @ Tc = 25 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC 35 °C/W
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2N3499
2N3499
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Untitled
Abstract: No abstract text available
Text: 2N5818 SILICON NPN TRANSISTOR DESCRIPTION: The 2N5818 is an NPN Small Signal Transistor for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 750 mA V ce 40 V P diss 500 mW @ TA = 25 °C Tj -65 °C t o +135 °C T stg -65 °C t o +150 °C
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2N5818
2N5818
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Untitled
Abstract: No abstract text available
Text: 2N3227 m \\ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3227 is Designed for General Purpose Low Current Switching Applications MAXIMUM RATINGS 200 mA lc 20 V ce P diss 1.2 W @ Tc = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 145 °C/W 0JC STATIC CHARACTERISTICS
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2N3227
2N3227
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Untitled
Abstract: No abstract text available
Text: 2N5819 SILICON PNP TRANSISTOR DESCRIPTION: The 2N5819 is an PNP Small Signal Transistor for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 750 mA lc V -40 V ce P diss 500 mW @ Ta = 25 °C Tj -65 °C t o +135 °C T -65 °C t o +150 °C
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2N5819
2N5819
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Untitled
Abstract: No abstract text available
Text: m 2N2193A \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2193A is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 1.0 A V ce 50 V V cb 80 V P diss 2.8 W @ Tc = 25 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC
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2N2193A
2N2193A
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Untitled
Abstract: No abstract text available
Text: m 2N2219A \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2219A is Designed for General Purpose Switching and Amplifier Applications. MAXIMUM RATINGS lc 800 mA V ce 40 V 3.0 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC 58.3 °C /W
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2N2219A
2N2219A
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Untitled
Abstract: No abstract text available
Text: m 2N3019 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3019 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce 5.0 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C T -65 °C to +200 °C stg 16.5 °C/W 0JC
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2N3019
2N3019
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Untitled
Abstract: No abstract text available
Text: m 2N3020 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3020 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce P diss 5.0 W @ Tc = 25 °C Tj -65 °C to +200 °C stg -65 °C to +200 °C T 16.5 °C/W 0JC
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2N3020
2N3020
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Untitled
Abstract: No abstract text available
Text: 2N3501 m \\ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3501 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 300 mA lc V 150 V ce P diss 5.0 W @ T C= 2 5 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 35 °C/W 0JC
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2N3501
2N3501
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Untitled
Abstract: No abstract text available
Text: m 2N6190 \ \ SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N6190 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 5.0 A lc V -80 V ce P diss 10 W @ T C = 25 °C Tj -65 °C to +200 °C stg -65 °C to +200 °C T 17.5 °C/W
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2N6190
2N6190
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Untitled
Abstract: No abstract text available
Text: m 2N3635 \ \ SILICON PNP TRANSISTOR DESCRIPTION: The 2N3635 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 300 mA lc V -140 V ce P diss 5.0 W @ T C= 2 5 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 35 °C/W 0JC
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2N3635
2N3635
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Untitled
Abstract: No abstract text available
Text: m 2N6292 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6292 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 3.0 A Ib V 10 A PEAK 70 V ce 40 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C T -65 °C to +200 °C
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2N6292
2N6292
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Untitled
Abstract: No abstract text available
Text: m 2N2243A \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2243A is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc PEAK ce 80 V P d is s 2.8 W @ Tc = 25 °C T j -65 °C to +200 °C T stg -65 °C to +200 °C V 62.5 °C/W
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2N2243A
2N2243A
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2n2243 transistor
Abstract: No abstract text available
Text: m 2N2243 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N2243 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc PEAK ce 80 V P d is s 2.8 W @ Tc = 25 °C T j -65 °C to +200 °C T stg -65 °C to +200 °C V 62.5 °C/W
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2N2243
2N2243
2n2243 transistor
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Silicon Zener Diodes melf
Abstract: 1N5225 1N5262 DL5225B DL5262B
Text: DL5225B thru DL5262B SILICON PLANAR ZENER DIODES Cathode Mark S tandard Z e n e r v o lta g e to e ra n ce is 620% . A d d s u ffix “A" fo r 610% to le ra n ce and su ffix “ B" fo r 65% tole ran ce. O th er tole ran ce, non sta n d a rd and h ig h e r Z e n e r vo lta g e s
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DL5225B
DL5262B
DO-35
1N5225.
1N5262
kDO-35
200mA
Silicon Zener Diodes melf
1N5225
1N5262
DL5262B
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2N3253
Abstract: No abstract text available
Text: ÀSII 2N3253 SILICON NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE TO- 39 The 2N3253 is Designed as a Core Driver, and Saturated Switch. MAXIMUM RATINGS Ie 1.0 A V ce 40 V Pdiss 5.0 W @ Te = 25 0C Pdiss 1.0 W @ Ta = 25 0C Tj -65 0C to #200 0C T stg -65 0C to #200 0C
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2N3253
2N3253
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Untitled
Abstract: No abstract text available
Text: DL5225B thru DL5262B SILICON PLANAR ZENER DIODES Cathode Mark S tandard Z e n e r v o lta g e to e ra n ce is 620% . A d d s u ffix “A" fo r 610% to le ra n ce and su ffix “ B" fo r 65% tole ran ce. O th er tole ran ce, non sta n d a rd and h ig h e r Z e n e r vo lta g e s
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DL5225B
DL5262B
ZMM5225.
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Untitled
Abstract: No abstract text available
Text: m 2N6497 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6497 is Designed for High Voltage, High Speed, Power Switching Applications. MAXIMUM RATINGS 5.0 A 10 A PEAK 2.0 A lc Ib 250 V V ce 80 W @ Tc = 25 °C Tj -65 °C t o +150 °C T stg -65 °C t o +150 °C
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2N6497
2N6497
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Untitled
Abstract: No abstract text available
Text: m 2N6132 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6132 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 7.0 A lc 3.0 A Ib V 10 A PEAK -40 V ce 50 W @ Tc = 25 °C P diss Tj -65 °C t o +150 °C T -65 °C t o +150 °C
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2N6132
2N6132
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Untitled
Abstract: No abstract text available
Text: m 2N6490 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6490 is Designed for General Purpose Medium Power Amplifier and Switching Applications. MAXIMUM RATINGS lc 15 A Ib 5.0 A V ce -60 V P diss 75 W @ Tc = 25 °C Tj -65 °C t o +150 °C T stg -65 °C t o +150 °C
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2N6490
2N6490
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