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    CE AMPLIFIER Search Results

    CE AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA4-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA1-2542-2 Rochester Electronics LLC High Output Current Operational Amplifier Visit Rochester Electronics LLC Buy

    CE AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    decodeur

    Abstract: recepteur infrarouge depannage tv amplificateur audio a base de transistor amplificateur de son 3v depannage recepteur to 78 Coin Acceptor equivalent des circuit integre ttl IR 720P
    Text: Informations importantes MODE D’EMPLOI Configuration et branchements Utilisation Fonctions pratiques MODÉLE PROJECTEUR LCD Maintenance et guide de dépannage XG-NV6XU Annexes Avant d’utiliser ce projecteur LCD, veuillez lire attentivement ce mode d’emploi.


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    TINS-6737CEZZ T2187-A 9P11-JWG decodeur recepteur infrarouge depannage tv amplificateur audio a base de transistor amplificateur de son 3v depannage recepteur to 78 Coin Acceptor equivalent des circuit integre ttl IR 720P PDF

    Transconductance Look-up Table Based pHEMT Model

    Abstract: No abstract text available
    Text: Capacitance and RF-Conductance/Transconductance Look-up Table Based pHEMT Model Ce-Jun Wei1, Yu Zhu, Hong Yin , Oleksiy Klimashov, Cindy Zhang, and Tzung-Yin Lee SKYWORKS SOLUTION INC., 20 SYLVAN ROAD, WOBURN, MA 01801, USA 1 ce-jun.wei@skyworksinc.com ABSTRACT


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    thyristor control arc welding rectifier circuit

    Abstract: YJ1600 AIR FLOW DETECTOR CIRCUIT DIAGRAM WR340 waveguide directional coupler power supply for magnetron microwave oven magnetron circuit diagram electronic choke for tube light power supply for magnetron YJ1600 wiring diagram motor autotransformer SCHEMATIC POWER SUPPLY kw
    Text: SM1180T & TM060 SWITCHING POWER GENERATOR FOR 6 KW MAGNETRON TECHNICAL NOTE Issue June 2002 SM1180T & TM060 Dichiarazione di Conformità CE CE Declaration of Conformity Nome del Costruttore: Manufacturer’s Name: ALTER s.r.l Indirizzo del Costruttore: Manufacturer’s Address:


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    SM1180T TM060 SM1180T thyristor control arc welding rectifier circuit YJ1600 AIR FLOW DETECTOR CIRCUIT DIAGRAM WR340 waveguide directional coupler power supply for magnetron microwave oven magnetron circuit diagram electronic choke for tube light power supply for magnetron YJ1600 wiring diagram motor autotransformer SCHEMATIC POWER SUPPLY kw PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Brief Intel CE 5060 MOPLL Tuner Consumer Electronics Advanced MOPLL Tuner for Hybrid Analog/Digital TV Applications Tuner Evaluation • Digital terrestrial set top boxes The Intel CE 5060 MOPLL tuner with integrated • Integrated digital televisions


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    0206/PDF/MB/CM PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Brief Intel CE 5063 Image Rejection MOPLL Tuner Consumer Electronics Advanced MOPLL Tuner for Hybrid Analog/Digital TV with Image Rejection Applications Tuner Evaluation • Digital terrestrial set top boxes The Intel CE 5063 image rejection MOPLL tuner


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    0206/PDF/MB/CM PDF

    C945K

    Abstract: c550b C548B TO-92 227 1020 C2785 bc 9013 MPS6521 pn3565 cs9015 C559B
    Text: NPN Low Level Amplifiers Device No. [Mark] K S C 900 Case Style I CBO IC V CE VCB h FE & @ Min Max mA (V) (nA) @ (V) Max V CE(SAT) (V) Max & V BE(SAT) V BE(ON) * IC @ (mA) IC C ob (pF) (V) (I = ) Min Max B 10 Max I (MHz) @ C Min (mA) NF (dB) Max Test Cond.


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    T5089 O-236 SS9011 C945K c550b C548B TO-92 227 1020 C2785 bc 9013 MPS6521 pn3565 cs9015 C559B PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 | M IT E L SL1466 _ Wideband PLL FM Demodulator Prelim inary Inform ation s e m ic o n d u c t o r CE CE 1 28 DIGF LO 2 27 31 VIDEO FB+ DIGF HI EE 3 26 31 VIDEO + CE AFC WINDOW CE OSC V c c CE 4 25 31 V ID E O - 5 24 31 VIDEO F B - 6 (o O S C + CE


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    SL1466 SL1466 480MHz. PDF

    Untitled

    Abstract: No abstract text available
    Text: s •; J m DS 2107A PRELIMINARY DALLAS SEMICONDUCTOR DS2107A SCSI Terminator FEATURES PIN ASSIGNMENT • Fully compliant with SCSI and SCSI-2 standards R3 CE CE IX CE R4 IX S 12 RS Ü C 6 11 ~ m R7 7 10 R6 8 # XI XI TERMPWR1 R1 • Backward compatible to the DS2107S


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    DS2107A DS2107S DS2107AS 16-Pln DS2107AE 20-PIN 20-PIN PDF

    2SD992

    Abstract: bectron 2SD992-Z 2SB962-Z transistor mp
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE m 2SD 992-Z NPN SILICON EPITAXIAL TRANSISTOR M P -3 DESCRIPTION 2SD992-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • Low V CE sat : V CE(sat) = 0 .3 V TYP.


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    2SD992-Z 2SD992-Z NECTOKJ22686 2SD992 bectron 2SB962-Z transistor mp PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI<Dig.Ana.lNTERFACE> M62393P/FP 8-BIT 8CH I2 :-BUS D-A CONVERTER WITH BUFFER AMPLIFIERS DESCRIPTION PIN CONFIGURATION TOP VIEW □j 20 j CSO SCL ce CS1 SDA Œ IX CE HE CH □l cn [W o cn > R Ao6 <o The M62393 is an integrated circuit semiconductor of


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    M62393P/FP M62393 M5M4V4100J 4194304-BIT 4194304-WORD PDF

    Untitled

    Abstract: No abstract text available
    Text: GEC P L E S S E Y S W S L M I C O N D t; C T O U S FEBRUARY1997 _ PRELIMINARY INFORMATION SL1466 WIDEBAND PLL FM DEMODULATOR FEATURES • Single chip PLL system fo r wideband FM demodulation CE CE CE 1 28 31 2 27 33 26 39 a 4 5 6 AFC SET


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    FEBRUARY1997 SL1466 SL1466 PDF

    KTA1268

    Abstract: NF05 kta1268 transistor
    Text: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1268 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • Low Noise. : NF=3dB Typ. , Rg=100ß, V Ce=-6V , Ic=-100juA, f=lkHz : NF=0.5dB(Typ.), Rg=lk&, V Ce=-6V , Ic=-100j[/A, f=lkHz.


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    KTA1268 -100juA, -100j -120V. Ta-25 KTA1268 NF05 kta1268 transistor PDF

    2n3055 tos

    Abstract: fairchild semiconductors 2N3054 2N3440 2N6233 BFX34 SE9331 35382d Solidev
    Text: Semiconductors Fairchild Semiconductors Silicon Power Transistors NPN Power Transistors Metal Can T05 REFEREN CE T A B L E MAX ra See small signal general purpose amplifier and high voltage sections | C H A R A C T E R IS T IC S @25‘ C in g s V Code V CE O


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    BFX34 35373H 2N3440 35374F 35050B 2N3720 35049X 2N5490 T0220AB 35051X 2n3055 tos fairchild semiconductors 2N3054 2N6233 SE9331 35382d Solidev PDF

    2n2082

    Abstract: 2N2152 2N2075 2N2076 2N2153 2N2156 2N3312 2N2079 2N2077 2N2078
    Text: germanium power transistors PNP TO-36 I c max — 5 to 30A V c e o js u s j — 20 to 65V Ii f e VcEO(SUS) V ebo (Volts) (Volts) Type# @ Ic /V ce (Min-Max @ A /V ) VcEISAT) @ Ic / I b (V @ A /A ) V be @ Ic / V ce (V @ A /V ) IC EV Pd @ @ V cE (m A @ V )


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    2N3311 2N3312 2N3313 2N33ff 2N3314 2N3315 1N5555 1N5555 1N5556 1N5557 2n2082 2N2152 2N2075 2N2076 2N2153 2N2156 2N2079 2N2077 2N2078 PDF

    2N3563

    Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
    Text: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15


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    D0D0S15 2N5088 2N5127 O-106 2N5131 2N5133 2N5209 2N5210 2N3563 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 PDF

    NPN 2sC1685

    Abstract: 2SC1685 R 2SC1685 2SC1684 2SCI685 2SC1684 R 2SC1684 Q 290A 2SCI684 2SC1685 Q
    Text: 2SC1684, 2SC1685 2SC1684, 2SC1685 '> ij 3 > NPN x fcf£ + '> 7, ;U7?U'— NPN Epitaxial Planar —JK ^iiSffl/G en eral Amplifier • # ^ /F e a tu re s • fii^ rL iiiP S ^ hFE ^ ¡f t v ^ / H i g h hFE • 3> ? ^ i ?mwm± V - 7 / Low V CE sat cE (sat)


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    2SCI684, 2SCI685 2SC1684, 2SC1685 2SC1684 SC-43 NPN 2sC1685 2SC1685 R 2SC1685 2SCI685 2SC1684 R 2SC1684 Q 290A 2SCI684 2SC1685 Q PDF

    TO-237a

    Abstract: 2sc1175 92PU51A 2SA598 92PU45 TO-92B 2SC1346 92PU01A 2SA659 2SA719
    Text: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY M A XIM UM RATINGS CASE Pd IC VCEO raW (A) (V) HFE min max V CE(sat) IT Cob C O M PLE IC V CE max min max MENTARY (mA) (V) (V) (A) (M Hz) (PF) TYPE 17+ 2SC1008 2SC1175 2SC1209 2SC1317 2SC1318 N N


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    2SC1008 2SC1175 O-92B 2SA659 2SC1209 2SC1317 2SA719 2SC1318 TO-237a 92PU51A 2SA598 92PU45 TO-92B 2SC1346 92PU01A 2SA659 2SA719 PDF

    transistor c 4236

    Abstract: K 3053 TRANSISTOR eco 4234 transistor 2N 4236 2N4141 08/bup 3110 transistor
    Text: 6091788 MICRO ELECTRONICS CORP-u 82D 00664 P AS DEI bD^lTflö □□□Qbb4 ñ I ^ POLARITY Medium Power Amplifiers and Switches TYPE NO. M AXIM U M RATINGS V CE SAT FE CASE Pd (mW) 'c (A) V CEO (V) min max 'c Im A) V CE (V) max (V) 'c fT min (A) (MHz)


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    O-106 O-92A transistor c 4236 K 3053 TRANSISTOR eco 4234 transistor 2N 4236 2N4141 08/bup 3110 transistor PDF

    gk 106

    Abstract: BCHL MICRO ELECTRONICS ltd transistor transistor TO-106 422 MPS6566 transistor
    Text: MICRO ELECTRONICS LTD 51E D • bGT17ññ 0Q0107M 422 ■ MEHK Low Level and G eneral Purpose Amplifiers TYPE NO. POLARITY T -2 7 -0 1 CASE MAXIM UM RATINGS Pd <mW mA| VCEO (V) 'c V CE(SAT) h fe 'c min max (m A | V CE (V) max (V) 'c (mA) MPS3608 MPS3707


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    bGT17ñ 0Q0107M O-92A gk 106 BCHL MICRO ELECTRONICS ltd transistor transistor TO-106 422 MPS6566 transistor PDF

    2N2222

    Abstract: 2n3072
    Text: GENERAL PURPOSE HIGH SPEED AMPLIFIERS Maximum Ratings V CE Volts Volts 1c/lB Volts Min/Max mA Volts mA/mA m V CB V cE S a t @ H f e @ ic ft MHz Min UJ PNP PD Ambient mW > Type NPN Electrical Characteristics @ 25°C pF Max tON ns Max C °b tO FF Case Geometry &


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    PDF

    2N2937

    Abstract: 2N2804
    Text: DIFFERENTIAL AND DUAL AMPLIFIERS Electrical Characteristics @ 25°C One Side Maximum Ratings Type NPN A m bient PD V CE(Sat) @ l c / l B H F E @ *C v EB One Side mW Both Sides mW V CB V CE Volts Volts 2N2060 500 600 100 60 7 30/90 0.1 0.5 2N2060A 500 600


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    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    2SC4045

    Abstract: No abstract text available
    Text: 2SC4045 h 7 y V 7» $ /Transistors 2SC 4045 + y'JH> V ÿ s v W Epitaxial Planar NPN Silicon Transistor Amplifier • ÿJ-JB'^'iisEI/Dimensions Unit : mm 1) fT t f M i-'o fT=3.2GHz(Typ.) 2) Ce • rbb’ < ¡ÜŸÜÎio Ce • rbb'=4ps(Typ.) 3) N F A ^ J 'il'o


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    2SC4045 2SC4045 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TY P E 2SC4685 U nit in mm STROBE FLASH APPLICATIONS. M E D IU M POW ER AMPLIFIER APPLICATIONS. • High DC C urrent Gain : hF E l = 800-3200 ( V = 2V, Ic = 0.5A) : hpE (2) = 250 (Min.) (V ce= 2V , Ic = 4A) Low Saturation Voltage : v CE(sat) = 0-5V (Max.) (Ic = 4A, Ig = 40mA)


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    2SC4685 PDF