Untitled
Abstract: No abstract text available
Text: Transistors SMD Type PNP Transistors 2SB1198K SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low V CE sat .V CE(sat) =-0.2V 1 BVC EO=-80V 0.55 ● High berakdown voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 V CE(sat)=-0.2V 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1
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2SB1198K
OT-23
-100mA
-50mA
100MHz
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Untitled
Abstract: No abstract text available
Text: Product specification 2SB1198K SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low V CE sat .V CE(sat) =-0.2V 1 BVC EO=-80V 0.55 ● High berakdown voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 V CE(sat)=-0.2V 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1
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2SB1198K
OT-23
-100mA
-50mA
100MHz
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Untitled
Abstract: No abstract text available
Text: ZXTD6717E6 COM PLEM ENTARY NPN/ PNP LOW SATURATION DUAL TRANSISTORS SUM M ARY NPN: V CEO=15V; V CE sat =0.1V; IC= 1.5A; PNP: V CEO=-12V; V CE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very
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ZXTD6717E6
OT23-6
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4606 inverter ic
Abstract: XC6210C mosfet 4459 XC6210 XC6210A XC6210B XC6210D 12Represents marking 6B E5 Marking sot-23-5
Text: XC6210 Series •PIN CONFIGURATION VOUT 5 VOUT NC 4 VIN 5 2 1 3 VIN VSS CE 4 1 2 CE VSS SOT-25 TOP VIEW 3 NC SOT-89-5 (TOP VIEW) USP-6B (BOTTOM VIEW) *Please use the circuit without connecting the heat dissipation pad. If the pad needs to be connected to
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XC6210
OT-25
OT-89-5
XC6210A
XC6210B
XC6210C
XC6210D
ud200408
4606 inverter ic
XC6210C
mosfet 4459
XC6210A
XC6210B
XC6210D
12Represents
marking 6B
E5 Marking sot-23-5
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RP173N
Abstract: RP173K
Text: RP173x Series Low Supply Current 150mA 11V Input LDO The RP173x Series are CMOS-based LDO regulators featuring 150mA output and low supply current of Typ. 2.0 A. RP173x Series are suitable for the power source such as the equipment being in the standby-mode. A version with CE input pin has reduced CE pull-up
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RP173x
150mA
OT-23-5
SC-88A
RP173x
R1163x
RP173N
RP173K
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Untitled
Abstract: No abstract text available
Text: FS326E+G-DS-11_EN JUN 2009 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.1 Datasheet FS326E+G One Cell Lithium-ion/Polymer Battery Protection IC FS326E+G FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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FS326E
G-DS-11
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Untitled
Abstract: No abstract text available
Text: DW01M-DS-12_EN DEC 2010 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.2 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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DW01M-DS-12
DW01M
OT-23-6)
DW01Mx-T1
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DW01HA-x
Abstract: DW01HA-DS-13_EN
Text: DW01HA-DS-13_EN JAN 2014 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet DW01HA One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01HA FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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DW01HA-DS-13
DW01HA
OT-23-6)
OT-23-6
DW01HA-x
DW01HA-DS-13_EN
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RP173K
Abstract: RP173N SOT-23-5 VF
Text: RP173x Series Low Supply Current 150mA 11V Input LDO with Reverse Current Protection The RP173x Series are CMOS-based LDO regulators featuring 150mA output and low supply current of Typ. 2.0 A. RP173x Series are suitable for the power source such as the equipment being in the standby-mode. A version with CE input pin has reduced CE pull-up
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RP173x
150mA
OT-23-5
SC-88
RP173x,
RP173x
RP173K
RP173N
SOT-23-5 VF
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Untitled
Abstract: No abstract text available
Text: DW01M-DS-15_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.5 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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DW01M-DS-15
DW01M
OT-23-6)
DW01Mx-T1
DW01MC-SAã
DW01MC-TA
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Untitled
Abstract: No abstract text available
Text: DW01M-DS-13_EN APR 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET DW01M FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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DW01M-DS-13
DW01M
OT-23-6)
DW01Mx-T1
DW01MC-SAã
DW01MC-TA
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Untitled
Abstract: No abstract text available
Text: FS312F-G-DS-11_EN SEP 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.1 Datasheet FS312F-G One Cell Lithium-ion/Polymer Battery Protection IC FS312F-G FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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FS312F-G-DS-11
FS312F-G
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marking code ce SOT23
Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Text: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A
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Transistors/SOT23
MMBT2222A
IMBT/MMBT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
Appl45
80jjs;
marking code ce SOT23
MOSFET MARKING 3F
marking code 3a sot23
CE MARKING CODE
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Philips FA 291 AMPLIFIER
Abstract: Philips FA 297 AMPLIFIER DECT RF Transceiver 1.9 ghz SC28 TZA3030 TZA3040 AB1432 SC28L198
Text: Philips Sem iconductors FUNCTIONAL INDEX IC19: ICS FOR DATA COMMUNICATIONS P re fa ce .
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OT137-1
AN98090--
AN96051--Fiber
STM16
Philips FA 291 AMPLIFIER
Philips FA 297 AMPLIFIER
DECT RF Transceiver 1.9 ghz
SC28
TZA3030
TZA3040
AB1432
SC28L198
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KSC3488
Abstract: KSC853 KSA953 KSC815
Text: FUNCTION GUIDE TRANSISTORS SOT-23 Type Transistors Continued Condition Device and Polarity (Marking) NPN lc V ce lc (V) (A) (V) (mA) MIN MAX PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) KST4126(C3) BCW29(C1) BCW31(D1) 1.1.2 V cE<*at), VBE tsatX V )
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OT-23
KST1009F2
KST1009F3
KST1009F4
KST1009F5
KST4124
KST4126
BCW29
BCW31
O-92S
KSC3488
KSC853
KSA953
KSC815
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mmta56
Abstract: No abstract text available
Text: SOT23 M E D IU M POWER TRANSISTORS NPN Pinout : 1-Collector, 2-Emitter, 3-Base hFE Type v CBO V v CEO V mA v CE(sat) Plot mW M in /M ax at Iq/V ce mA/Volts M ax V olts at Ic/I b mA ft TYP MHz BCX41 125 125 800 330 63/- 100/1 0.90 300/30 100 F M M TA 06 80
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BCW68F
BCW68G
BCW68H
BCX17
BC807
BC807-16
BC807-25
BC807-40
BCW67A
BCW67B
mmta56
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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SC08b
transistor f6 13003
equivalent transistor bj 131-6
transistor Eb 13003 BM
BB112
smd TRANSISTOR code marking 2F 6n
a1211 lg
CQY58
BU705
TRANSISTOR 131-6 BJ 026
philips om350
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2SC4370A
Abstract: 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 2SA1267 bc557 2SA1504 BC337/BC327 2SC3202
Text: 1 Transistors Maximum Ratings KOREA Electrical Characteristics Ta—25°C Type No NPN PNP Ic Pc (V) (mA) (mW) 150 I’fe MAX ^CE (V) Ic (mA) (V) 7 0^700 6 2 0.25 100 fT I« (mA) (MHz) (TYP) MIN ^CE (V) NF IC (mA) (TYP) MAX (dB) VCE (V) •c (mA) f (KHz)
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2SC387SS
2SA1S04S
OT-23
2SC3201
2SA1269
O-92M
2SC3199
2SA1267
2SC3198A
2SC4370A
2SC3875S
2SA1504S
2SC3227
BC548 ,BC558
bc557
2SA1504
BC337/BC327
2SC3202
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sot89 AE pnp
Abstract: AE SOT223 PMBT4401
Text: 96 Surface Mount Devices General Purpose Transistors cont. Ratings hFE v CE(sat) min./max. at Iq /V Ce max. at l(j^B V mA/mA Pinout See Section VII v CEO V VCBO V •c Package BCW70 BC807W BC857W BCP52 BCX52 SOT-23 SOT-323 SOT-323 SOT-223 SOT-89 45 45 45
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BCW70
BC807W
BC857W
BCP52
BCX52
PMBTA55
PMBT2907A
PXT2907A
PZT2907A
BCW89
sot89 AE pnp
AE SOT223
PMBT4401
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BST60
Abstract: No abstract text available
Text: 98 Surface M ount Devices Darlington Transistors cont. Type % EG V Package v CE(sat) hFE Ratings v CBO V *C ' jnA1’^ 45 45 60 60 80 80 500 500 500 500 500 500 »T max. at lç/lg min. at Ig'V CE V mA/V MHz mA/mA Pinout See Section VII PNP (cont.) BSP60
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BSP60
BST60
BSP61
BST61
BSP62
BST62
OT-223
OT-89
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Untitled
Abstract: No abstract text available
Text: I t,S0113D Pro Electron Surface Mount Bipolar Devices Device No. SOT-23 Mark Case Style 0040554 VCES* V VEBO VCBO CEO (V) (V) (V) Min Min Min I * ' ces 'C B O (c o n tin u e d ) v h fe V CB <nA) Max (V) h fa Min @ Max 'c (m A ) & V CE(SAT) & V CE (v) Max
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S0113D
OT-23
BC859C
BC860C
O-236
BCP52
BCP53
O-261
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BT4403
Abstract: MBT3906
Text: Surface Mount Transistors NFN Transistors/SOT23 M a rk in g C ode* V CEO 1P 1N 2X 40 40 40 M M B TA 05 M M B TA 06 M M B T5551 1H 1G 3S M M B T A 42 1D Type N um ber M M BT2222A IM B T /M M B T 3 9 0 4 M M B T4401 h FE @ VCE/IC V CE SAT @ Ic /lß fT @ V ce/I c
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Transistors/SOT23
BT2222A
T4401
T5551
Amplifiers/SOT23
1SI95
BT4403
MBT3906
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tl4311
Abstract: TL431M1 TL431 8pin TL431 sot89 TL431N tl4316 TL431 application TL431 IT TL431 tl431 application circuits
Text: SEMICONDUCTOR E x ce lle n ce in A n a lo g P o w er P ro d u c ts TL431 Precision A djustable Shunt Regulator FEATURES APPLICATIONS • • • • • • • • • • • • • • Trim m ed Bandgap to 1% W ide O perating C u rre n t. 1mA to 150mA
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TL431
150mA
OT-89
TL431
tl4311
TL431M1
TL431 8pin
TL431 sot89
TL431N
tl4316
TL431 application
IT TL431
tl431 application circuits
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S2804
Abstract: sot-23 297 AS2804
Text: SEMICONDUCTOR E x ce lle n ce in A n a lo g P o w er P ro d u c ts AS2804 Micropower SOT-23, 50 mA Low-Dropout Voltage Regulator, Bypass & ON/OFF Switch FEATURES APPLICATIONS • • • • • • • • • • • • • • • • Low Quiescent C urrent .500|aA @ 30mA Output
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AS2804
OT-23,
OT-23-5)
LP2980/82
MIC5205
S2804
AS2804
470ki2
S2804
sot-23 297
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