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Catalog Datasheet	MFG & Type	PDF	Document Tags
DC1060 Abstract: CEF10N Text: CEF10N6S N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEF10N6S VDSS RDS ON ID @VGS 600V 0.75Ω 10A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.	Original	PDF	CEF10N6S O-220F DC1060 CEF10N

Catalog Datasheet

MFG & Type

PDF

Document Tags

DC1060

Abstract: CEF10N
Text: CEF10N6S N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEF10N6S VDSS RDS ON ID @VGS 600V 0.75Ω 10A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

Original

PDF

CEF10N6S O-220F DC1060 CEF10N