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Catalog Datasheet	MFG & Type	PDF	Document Tags
cek01n6G Abstract: No abstract text available Text: CEK01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS ON = 9.3 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. G G	Original	PDF	CEK01N6G cek01n6G

Catalog Datasheet

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PDF

Document Tags

cek01n6G

Abstract: No abstract text available
Text: CEK01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS ON = 9.3 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. G G

Original

PDF

CEK01N6G cek01n6G