9200
Abstract: cel 9200 hitachi mold cel 8361H JESD22 cel hitachi CEL-9200
Text: Cypress Semiconductor Qualification Report QTP# 97174 VERSION 1.0 June, 1997 Hitachi CEL 9200/9200U Molding Compound Cypress Semiconductor Hitachi CEL 9200/9200U Moding Compound Device: CY7C1009/CY7C199 Package: SOJ/TSOP QTP# 97174, V. 1.0 Page 2 of 7 Jun, 1997
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9200/9200U
CY7C1009/CY7C199
28-pins
8361H
JESD22-A112
85C/85
CY7C1009-VC
9200
cel 9200
hitachi mold cel
8361H
JESD22
cel hitachi
CEL-9200
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hitachi mold cel
Abstract: 9200 hitachi CEL9200 cel hitachi cel-9200 cel 9200 Hitachi CEL 9200 140C 8361H
Text: Cypress Semiconductor Qualification Report QTP# 97383 VERSION 1.0 January, 1998 32 Ld SOJ Package - Hitachi CEL9200 Mold Compound Omedata, Indonesia Assembly Cypress Semiconductor Assembly: Omedata, Indonesia Package: 32 Ld SOJ - Hitachi CEL 9200 Mold Compound
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CEL9200
CEL9200
8361H
CY7C109-VC
85C/85
CY7C107-VC
hitachi mold cel
9200 hitachi
cel hitachi
cel-9200
cel 9200
Hitachi CEL
9200
140C
8361H
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MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
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2SA1977
2SA1978
2SC2351
2SC3355
2SC3357
2SC3545
2SC3583
2SC3585
2SC4093
2SC4094
MRF947T1 equivalent
MRF947T1 equivalent transistor
NJ1006
BFP320
fll120mk
FLL101ME
MGF4919G
fujitsu gaas fet fhx76lp
HPMA-2086
MMBR521L
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cel 9200
Abstract: hitachi mold cel CY7C199-VC cda 199 Hitachi CEL 9200 9200 hitachi 8361H JESD22
Text: Cypress Semiconductor Package Qualification Report QTP# 000405 VERSION 1.1 July, 2000 SOJ 28 Leads Hitachi Cel 9200 Molding Compound Cypress Philippines Assembly CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director 408 432-7069
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85C/85
CY7C199-VC
cel 9200
hitachi mold cel
CY7C199-VC
cda 199
Hitachi CEL
9200
9200 hitachi
8361H
JESD22
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Rubycon usr
Abstract: rubycon usp series RJ4 Elna Rubycon usp nichicon smg Rubycon usp data sheet RVZ ELNA REV RUBYCON RUBYCON MXG Nichicon sme
Text: CROSS REFERENCE - ALUMINUM ELECTROLYTIC CAPACITORS Aluminum Electrolytic Capacitors/Chip Type Specifications Series Maximum withstand temperature Panasonic NICHICON RUBYCON ELNA CHEMI-CON SANYO Endurance UZD* UZR* 1000 hr. MC EEVMC* *BJ UZE* *RSV* RV4* MVS*
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B43505*
B43511*
B43514*
3000h
Rubycon usr
rubycon usp series
RJ4 Elna
Rubycon usp
nichicon smg
Rubycon usp data sheet
RVZ ELNA
REV RUBYCON
RUBYCON MXG
Nichicon sme
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2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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F2002:
F2003:
F2004:
2SC3355 SPICE MODEL
transistor C2003
C319B
MGF1412
RF TRANSISTOR 10GHZ
MRF134 rf model .lib file
2SK571
MGF1402
MRF9331
pb_hp_at41411_19921101
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BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF799
BF799W
BFP181
BFP182
BFP182R
BFP182W
BGT24MTR11
AZ1045-04F
BAR86-02LRH
24GHz Radar
BGA628L7
SMV1705
BFR181W
ALPHA&OMEGA DATE CODE
marking code onsemi Diode
2SC4586
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XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
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AU6371B51
Abstract: T5250 Amilo J503 lcd connector TS-L632H 965PM 4965AGN vga nvidia Geforce 6100 PM Broadcom WLAN 802.11n
Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - - This Document can not be used without Samsung's authorization - 2. Introduction and Specification 1 Introduction 1) High Performance PC - Intel Core 2 Duo Processor and DDR II Memory
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G/8400
AU6371B51
T5250
Amilo
J503 lcd connector
TS-L632H
965PM
4965AGN
vga nvidia
Geforce 6100 PM
Broadcom WLAN 802.11n
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220 ac INVERTER without transformer
Abstract: sumida backlight inverter electroluminescent display AN 7323 hitachi mosfet power amplifier audio application led lamp INDUCTOR OUT LOOK OF CONDENSER MIC sumida lcd inverter pin diagram 1N4148 SP4439
Text: SP4439 Ultra-Quiet Electroluminescent Lamp Driver with Programmable Wave Shape • User Programmable Waveshape Via Two External Resistors ■ Patent Pending Low Noise Output Waveshaping ■ Waveshaped Output For Low Acoustic Noise and Maximum Efficiency
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SP4439
10-pin
SP4439
220 ac INVERTER without transformer
sumida backlight inverter
electroluminescent display
AN 7323
hitachi mosfet power amplifier audio application
led lamp INDUCTOR
OUT LOOK OF CONDENSER MIC
sumida lcd inverter pin diagram
1N4148
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Untitled
Abstract: No abstract text available
Text: HM5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-540 Z Preliminary Rev. 0.0 Mar. 20, 1996 Description The Hitachi HM5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low
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HM5118165B
1048576-word
16-bit
ADE-203-540
576-word
16-bit.
ns/70
ns/80
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ALRS8
Abstract: No abstract text available
Text: m iir 1^ 2 , HM5117400A/AL Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi H M 5117400A /A L is a CMOS dynamic RAM organized 4,194,304 words x 4 bits. It employs the most advanced CMOS technology for high p erform ance and low pow er. The
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HM5117400A/AL
304-word
117400A
HM5117400AS/ALS-6
HM5117400AS/ALS-7
HM5117400AS/ALS-8
300-mil
24/26-pin
CP-24DB)
ALRS8
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cel hitachi
Abstract: No abstract text available
Text: HM5117800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-262A Z Rev. 1.0 Jul. 5, 1996 Description The Hitachi HM5117800B is a CMOS dynamic RAM organized 2,097,152-word x B-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117800B offers Fast
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HM5117800B
152-word
ADE-203-262A
28-pin
ns/70
cel hitachi
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Untitled
Abstract: No abstract text available
Text: ADE-203-171A Z HM51W17400A/ALSeries 4,194,304-word x 4-bit Dynamic Random Access Memory Rev. 1.0 Nov. 22, 1994 HITACHI T he H itach i H M 5 1 W 1 7 4 0 0 A /A L is a CM O S dynamic RAM organized 4,194,304 words x 4 bits. It employs the most advanced CMOS technology
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ADE-203-171A
7400A
304-word
7400A/AL
HM51W17400AS/ALS-6
HM51W17400AS/ALS-7
HM51W17400AS/ALS-8
300-mil
26-pin
CP-26/24DB)
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HM5117800BLTT6
Abstract: No abstract text available
Text: HM5117800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-262A Z Rev. 1.0 Jul. 5,1996 Description The Hitachi HM5117800B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117800B offers Fast
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HM5117800B
152-word
ADE-203-262A
28-pin
ns/70
HM5117800BLTT6
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load cell kis- 9
Abstract: No abstract text available
Text: HM5116100B Series 16,777,216-word x 1-bit Dynamic Random Access Memory HITACHI ADE-203-371A Z Rev. 1.0 Nov. 10, 1995 Description The Hitachi HM5116100B is a CMOS dynamic RAM organized 16,777,216-word x 1-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116100B offers Fast Page
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HM5116100B
216-word
ADE-203-371A
mW/385
mW/358
16-bit
HM51161
load cell kis- 9
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Untitled
Abstract: No abstract text available
Text: HM5116100B Series 16,777,216-word x 1-bit Dynamic Random Access Memory HITACHI ADE-203-371A Z Rev. 1.0 Nov. 10, 1995 Description The Hitachi HM5116100B is a CMOS dynamic RAM organized 16,777,216-word x 1-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116100B offers Fast Page
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HM5116100B
216-word
ADE-203-371A
mW/385
mW/358
16-bit
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2561C
Abstract: No abstract text available
Text: HM5116405B Series HM5117405B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-511A Z Rev. 1.0 Mar. 28, 1996 Description The Hitachi HM5116405B Series, HM5117405B Series are CMOS dynamic RAMs organized 4,194,304word x 4-bit. They employ the most advanced CMOS technology for high performance and low power.
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HM5116405B
HM5117405B
304-word
ADE-203-511A
304word
ns/70
2561C
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emmc
Abstract: 2SC4367
Text: HITACHI 2SC4367— SILICON h ig h n p n e p it a x ia l F R EO Li ENC Y AM P LIFIËR Í. in .« « 2 . C 'u lI « c i o r 5 ttiK D m n M W i . i li ni MAXIMUM COLLECTOR DISSIPATION CURVE ABSOLUTE MAXIMUM RATINGS (T*-25*C) Item 2SC W [Symbol Unit Veno 30
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2SC4367â
Ta-25
2SC4367
emmc
2SC4367
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M62009L
Abstract: backup block signal capacitor 8P5
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M62009L
50msec
52X105XCd
backup block signal
capacitor 8P5
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LMG6401PLGE
Abstract: No abstract text available
Text: HITACHI/ OPTOELECTRONICS blE D MMSbEGS GQlESbH 7b3 • H I T M LMG640X FAMILY • • Pin Assignment P IN N O . SY M BO L Al V S S (0 V ) A2 V D D C+5V) A3 VO 2 40 d o t (W ) x 128 d ot (H ) g ra p h ic an d alp h a n u m e ric display C o n tro ller H D 61830B b u ilt-in
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LMG640X
61830B
6400PLG
G6401PLGE
6402PLFR
--B10
--A20
LMG6401PLGE
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HM5118160AJ-6
Abstract: m5118160a HM5116160ATT-7
Text: HM5116160A Series HM5118160A Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-208C Z Rev. 3.0 Jul. 2, 1996 Description The Hitachi HM5116160A Series, HM5118160A Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance
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HM5116160A
HM5118160A
1048576-word
16-bit
ADE-203-208C
576-word
16-bit.
HM5118160AJ-6
m5118160a
HM5116160ATT-7
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Untitled
Abstract: No abstract text available
Text: HM5116400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-367A Z Rev. 1.0 Nov. 2, 1995 Description The Hitachi HM5116400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116400B offers Fast Page Mode
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HM5116400B
304-word
ADE-203-367A
44Tb203
0G27153
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Untitled
Abstract: No abstract text available
Text: HM51W16160A Series HM51W18160A Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-217B Z Rev. 2.0 Jul. 2, 1996 Description The Hitachi HM51W16160A Series, HM51W18160A Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance
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HM51W16160A
HM51W18160A
1048576-word
16-bit
ADE-203-217B
576-word
16-bit.
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