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    9200

    Abstract: cel 9200 hitachi mold cel 8361H JESD22 cel hitachi CEL-9200
    Text: Cypress Semiconductor Qualification Report QTP# 97174 VERSION 1.0 June, 1997 Hitachi CEL 9200/9200U Molding Compound Cypress Semiconductor Hitachi CEL 9200/9200U Moding Compound Device: CY7C1009/CY7C199 Package: SOJ/TSOP QTP# 97174, V. 1.0 Page 2 of 7 Jun, 1997


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    PDF 9200/9200U CY7C1009/CY7C199 28-pins 8361H JESD22-A112 85C/85 CY7C1009-VC 9200 cel 9200 hitachi mold cel 8361H JESD22 cel hitachi CEL-9200

    hitachi mold cel

    Abstract: 9200 hitachi CEL9200 cel hitachi cel-9200 cel 9200 Hitachi CEL 9200 140C 8361H
    Text: Cypress Semiconductor Qualification Report QTP# 97383 VERSION 1.0 January, 1998 32 Ld SOJ Package - Hitachi CEL9200 Mold Compound Omedata, Indonesia Assembly Cypress Semiconductor Assembly: Omedata, Indonesia Package: 32 Ld SOJ - Hitachi CEL 9200 Mold Compound


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    PDF CEL9200 CEL9200 8361H CY7C109-VC 85C/85 CY7C107-VC hitachi mold cel 9200 hitachi cel hitachi cel-9200 cel 9200 Hitachi CEL 9200 140C 8361H

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


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    PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    cel 9200

    Abstract: hitachi mold cel CY7C199-VC cda 199 Hitachi CEL 9200 9200 hitachi 8361H JESD22
    Text: Cypress Semiconductor Package Qualification Report QTP# 000405 VERSION 1.1 July, 2000 SOJ 28 Leads Hitachi Cel 9200 Molding Compound Cypress Philippines Assembly CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director 408 432-7069


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    PDF 85C/85 CY7C199-VC cel 9200 hitachi mold cel CY7C199-VC cda 199 Hitachi CEL 9200 9200 hitachi 8361H JESD22

    Rubycon usr

    Abstract: rubycon usp series RJ4 Elna Rubycon usp nichicon smg Rubycon usp data sheet RVZ ELNA REV RUBYCON RUBYCON MXG Nichicon sme
    Text: CROSS REFERENCE - ALUMINUM ELECTROLYTIC CAPACITORS Aluminum Electrolytic Capacitors/Chip Type Specifications Series Maximum withstand temperature Panasonic NICHICON RUBYCON ELNA CHEMI-CON SANYO Endurance UZD* UZR* 1000 hr. MC EEVMC* *BJ UZE* *RSV* RV4* MVS*


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    PDF B43505* B43511* B43514* 3000h Rubycon usr rubycon usp series RJ4 Elna Rubycon usp nichicon smg Rubycon usp data sheet RVZ ELNA REV RUBYCON RUBYCON MXG Nichicon sme

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


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    PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    AU6371B51

    Abstract: T5250 Amilo J503 lcd connector TS-L632H 965PM 4965AGN vga nvidia Geforce 6100 PM Broadcom WLAN 802.11n
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - - This Document can not be used without Samsung's authorization - 2. Introduction and Specification 1 Introduction 1) High Performance PC - Intel Core 2 Duo Processor and DDR II Memory


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    PDF G/8400 AU6371B51 T5250 Amilo J503 lcd connector TS-L632H 965PM 4965AGN vga nvidia Geforce 6100 PM Broadcom WLAN 802.11n

    220 ac INVERTER without transformer

    Abstract: sumida backlight inverter electroluminescent display AN 7323 hitachi mosfet power amplifier audio application led lamp INDUCTOR OUT LOOK OF CONDENSER MIC sumida lcd inverter pin diagram 1N4148 SP4439
    Text: SP4439 Ultra-Quiet Electroluminescent Lamp Driver with Programmable Wave Shape • User Programmable Waveshape Via Two External Resistors ■ Patent Pending Low Noise Output Waveshaping ■ Waveshaped Output For Low Acoustic Noise and Maximum Efficiency


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    PDF SP4439 10-pin SP4439 220 ac INVERTER without transformer sumida backlight inverter electroluminescent display AN 7323 hitachi mosfet power amplifier audio application led lamp INDUCTOR OUT LOOK OF CONDENSER MIC sumida lcd inverter pin diagram 1N4148

    Untitled

    Abstract: No abstract text available
    Text: HM5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-540 Z Preliminary Rev. 0.0 Mar. 20, 1996 Description The Hitachi HM5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low


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    PDF HM5118165B 1048576-word 16-bit ADE-203-540 576-word 16-bit. ns/70 ns/80

    ALRS8

    Abstract: No abstract text available
    Text: m iir 1^ 2 , HM5117400A/AL Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI The H itachi H M 5117400A /A L is a CMOS dynamic RAM organized 4,194,304 words x 4 bits. It employs the most advanced CMOS technology for high p erform ance and low pow er. The


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    PDF HM5117400A/AL 304-word 117400A HM5117400AS/ALS-6 HM5117400AS/ALS-7 HM5117400AS/ALS-8 300-mil 24/26-pin CP-24DB) ALRS8

    cel hitachi

    Abstract: No abstract text available
    Text: HM5117800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-262A Z Rev. 1.0 Jul. 5, 1996 Description The Hitachi HM5117800B is a CMOS dynamic RAM organized 2,097,152-word x B-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117800B offers Fast


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    PDF HM5117800B 152-word ADE-203-262A 28-pin ns/70 cel hitachi

    Untitled

    Abstract: No abstract text available
    Text: ADE-203-171A Z HM51W17400A/ALSeries 4,194,304-word x 4-bit Dynamic Random Access Memory Rev. 1.0 Nov. 22, 1994 HITACHI T he H itach i H M 5 1 W 1 7 4 0 0 A /A L is a CM O S dynamic RAM organized 4,194,304 words x 4 bits. It employs the most advanced CMOS technology


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    PDF ADE-203-171A 7400A 304-word 7400A/AL HM51W17400AS/ALS-6 HM51W17400AS/ALS-7 HM51W17400AS/ALS-8 300-mil 26-pin CP-26/24DB)

    HM5117800BLTT6

    Abstract: No abstract text available
    Text: HM5117800B Series 2,097,152-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-262A Z Rev. 1.0 Jul. 5,1996 Description The Hitachi HM5117800B is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117800B offers Fast


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    PDF HM5117800B 152-word ADE-203-262A 28-pin ns/70 HM5117800BLTT6

    load cell kis- 9

    Abstract: No abstract text available
    Text: HM5116100B Series 16,777,216-word x 1-bit Dynamic Random Access Memory HITACHI ADE-203-371A Z Rev. 1.0 Nov. 10, 1995 Description The Hitachi HM5116100B is a CMOS dynamic RAM organized 16,777,216-word x 1-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116100B offers Fast Page


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    PDF HM5116100B 216-word ADE-203-371A mW/385 mW/358 16-bit HM51161 load cell kis- 9

    Untitled

    Abstract: No abstract text available
    Text: HM5116100B Series 16,777,216-word x 1-bit Dynamic Random Access Memory HITACHI ADE-203-371A Z Rev. 1.0 Nov. 10, 1995 Description The Hitachi HM5116100B is a CMOS dynamic RAM organized 16,777,216-word x 1-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116100B offers Fast Page


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    PDF HM5116100B 216-word ADE-203-371A mW/385 mW/358 16-bit

    2561C

    Abstract: No abstract text available
    Text: HM5116405B Series HM5117405B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-511A Z Rev. 1.0 Mar. 28, 1996 Description The Hitachi HM5116405B Series, HM5117405B Series are CMOS dynamic RAMs organized 4,194,304word x 4-bit. They employ the most advanced CMOS technology for high performance and low power.


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    PDF HM5116405B HM5117405B 304-word ADE-203-511A 304word ns/70 2561C

    emmc

    Abstract: 2SC4367
    Text: HITACHI 2SC4367— SILICON h ig h n p n e p it a x ia l F R EO Li ENC Y AM P LIFIËR Í. in .« « 2 . C 'u lI « c i o r 5 ttiK D m n M W i . i li ni MAXIMUM COLLECTOR DISSIPATION CURVE ABSOLUTE MAXIMUM RATINGS (T*-25*C) Item 2SC W [Symbol Unit Veno 30


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    PDF 2SC4367â Ta-25 2SC4367 emmc 2SC4367

    M62009L

    Abstract: backup block signal capacitor 8P5
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF M62009L 50msec 52X105XCd backup block signal capacitor 8P5

    LMG6401PLGE

    Abstract: No abstract text available
    Text: HITACHI/ OPTOELECTRONICS blE D MMSbEGS GQlESbH 7b3 • H I T M LMG640X FAMILY • • Pin Assignment P IN N O . SY M BO L Al V S S (0 V ) A2 V D D C+5V) A3 VO 2 40 d o t (W ) x 128 d ot (H ) g ra p h ic an d alp h a n u m e ric display C o n tro ller H D 61830B b u ilt-in


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    PDF LMG640X 61830B 6400PLG G6401PLGE 6402PLFR --B10 --A20 LMG6401PLGE

    HM5118160AJ-6

    Abstract: m5118160a HM5116160ATT-7
    Text: HM5116160A Series HM5118160A Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-208C Z Rev. 3.0 Jul. 2, 1996 Description The Hitachi HM5116160A Series, HM5118160A Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance


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    PDF HM5116160A HM5118160A 1048576-word 16-bit ADE-203-208C 576-word 16-bit. HM5118160AJ-6 m5118160a HM5116160ATT-7

    Untitled

    Abstract: No abstract text available
    Text: HM5116400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-367A Z Rev. 1.0 Nov. 2, 1995 Description The Hitachi HM5116400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116400B offers Fast Page Mode


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    PDF HM5116400B 304-word ADE-203-367A 44Tb203 0G27153

    Untitled

    Abstract: No abstract text available
    Text: HM51W16160A Series HM51W18160A Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-217B Z Rev. 2.0 Jul. 2, 1996 Description The Hitachi HM51W16160A Series, HM51W18160A Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance


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    PDF HM51W16160A HM51W18160A 1048576-word 16-bit ADE-203-217B 576-word 16-bit.