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    CEM9410 Search Results

    CEM9410 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CEM9410 Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEM9410A Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF

    CEM9410 Datasheets Context Search

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    CEM9410

    Abstract: No abstract text available
    Text: CEM9410 March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V , 7A , RDS ON =30mΩ @VGS=10V. RDS(ON)=50mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D D D D 8 7 6 5 1 2 3 4 N/C S S G High power and current handing capability.


    Original     		PDF CEM9410 CEM9410

    CEM9410

    Abstract: No abstract text available
    Text: CEM9410 N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 7A, RDS ON = 30mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		PDF CEM9410 CEM9410

    CEM9410A

    Abstract: No abstract text available
    Text: CEM9410A March 1998 N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 7.3A , RDS ON =28mΩ @VGS=10V. RDS(ON)=42m Ω @VGS=4.5V. D D D D 8 7 6 5 1 2 3 4 N/C S S G Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		PDF CEM9410A CEM9410A

    winband

    Abstract: 37-U69000-03 ba9743a sis 630 R2S35 29LV020 BA9743 SIS630S 2n2222 -331 2n2907 SOT23
    Text: 5 4 3 +2.5V +1.5V R277 150_1% 1u Y33 C37 THERMDP THERMDN W37 AK20 AN19 AN25 AH4 X4 AN17 AN29 AK28 AH22 AH26 6 CPUCLK 2,3 HLOCK# 2,3 DEFER# 2,3 HTRDY# 2,3 CPURST# 2,3 BPRI# 2,3 BREQ0# 2,3 RS#2 2,3 RS#1 2,3 RS#0 +1.5V 56 HA#35 R76 56 HA#34 R54 56 HA#33 R70 56


    Original     		PDF N340S8 37-U69000-03 22u/25V-2220 CEM4431-SO8 BAS16 470u/25V 2N7002 10u/10V 7u/16V 2u1H-55050-smd winband 37-U69000-03 ba9743a sis 630 R2S35 29LV020 BA9743 SIS630S 2n2222 -331 2n2907 SOT23

    CEM9410

    Abstract: No abstract text available
    Text: CEM9410 March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 7 A , R ds o n =30 itiQ RDS(ON)=50mQ @ V g s =1 0V. @ V g s = 4.5 V . • Super high dense cell design for extremely low Rds(on). • High power and current handing capability.


    OCR Scan     		PDF CEM9410 30itiQ CEM9410