Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CEPF630 Search Results

    CEPF630 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CEPF630 Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF
    CEPF630 Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEPF630B Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF

    CEPF630 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1m810

    Abstract: CEPF630
    Text: CEPF630B/CEBF630B PRELIMINARY 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 200V , 9A , RDS ON = 0.4 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.


    Original     		PDF CEPF630B/CEBF630B O-220 O-263 1m810 CEPF630

    CEPF630

    Abstract: CEFF630 CEBF630
    Text: CEPF630/CEBF630 CEFF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEPF630 Type 200V 0.35Ω 10A 10V CEBF630 200V 0.35Ω 10A 10V CEFF630 200V 0.35Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEPF630/CEBF630 CEFF630 CEPF630 CEBF630 O-263 O-220 O-220F O-220/263 CEPF630 CEFF630 CEBF630

    CEBF630B

    Abstract: CEFF630B CEIF630B CEPF630B CEBF630
    Text: CEPF630B/CEBF630B CEIF630B/CEFF630B N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEPF630B 200V 0.4Ω 9A 10V CEBF630B 200V 0.4Ω 9A 10V CEIF630B 200V 0.4Ω 9A 10V CEFF630B 200V 0.4Ω 9A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEPF630B/CEBF630B CEIF630B/CEFF630B CEPF630B CEBF630B CEIF630B CEFF630B O-220 O-263 O-262 O-220F CEBF630B CEFF630B CEIF630B CEPF630B CEBF630

    CEIF630

    Abstract: CEPF630
    Text: CEIF630 CEPF630/CEBF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 10A, RDS ON = 350mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEIF630 CEPF630/CEBF630 O-220 O-263 O-262 O-263 CEIF630 CEPF630

    CEPF630

    Abstract: No abstract text available
    Text: CEPF630/CEBF630 March 1998 4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V , 10A , RDS ON =350mΩ D @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. G


    Original     		PDF CEPF630/CEBF630 O-220 O-263 Current-ContEPF630/CEBF630 CEPF630

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    transistor f630

    Abstract: f630 power transistor f630 bf630 CEPF630 CD108
    Text: March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 200V, 10A, Rds on =400itiQ @VGS=10V. • Super high dense cell design for extremely low Rds(on>. • High power and current handling capability. • TO-220 & TO-263 package. CEB SERIES


    OCR Scan     		PDF 400itiQ O-220 O-263 to-263 to-220 F630/C transistor f630 f630 power transistor f630 bf630 CEPF630 CD108