01248
Abstract: No abstract text available
Text: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
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zo 607 MA
Abstract: 4948 CFH400 pHEMT FET marking A
Text: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
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OT343
400um
OT343:
OT343
zo 607 MA
4948
CFH400
pHEMT FET marking A
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CFH120-08
Abstract: No abstract text available
Text: CFH 120-08 Datasheet Low Noise pHEMT Packaged FET Description: The CFH 120-08 is a high linearity, very low noise pHEMT FET for general purpose, low noise front-end applications. Noise figures as low as 0.65 dB with associated gain of 12 dB are achievable at 12 GHz
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sot43
Abstract: No abstract text available
Text: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
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ZO 607 MA
Abstract: 4948 ta 6203 CFH400 Q62702-G0116
Text: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
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OT343
400um
OT343:
OT343
ZO 607 MA
4948
ta 6203
CFH400
Q62702-G0116
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Untitled
Abstract: No abstract text available
Text: CFH 120-08 Datasheet Low Noise pHEMT Packaged FET Description: The CFH 120-08 is a high linearity, very low noise pHEMT FET for general purpose, low noise front-end applications. Noise figures as low as 0.65 dB with associated gain of 12 dB are achievable at 12 GHz
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dual npn 500ma
Abstract: NPN/PNP transistor CTLM3410-M832D CTLM3474-M832D CTLM7410-M832D TLM832D v30010
Text: CTLM3410-M832D CTLM7410-M832D CTLM3474-M832D SURFACE MOUNT DUAL, LOW VCE SAT SILICON TRANSISTORS Top View Bottom View TLM832D CASE MARKING CODES: CTLM3410-M832D: CFG CTLM7410-M832D: CFH CTLM3474-M832D: CFJ APPLICATIONS • Switching Circuits • DC / DC Converters
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CTLM3410-M832D
CTLM7410-M832D
CTLM3474-M832D
TLM832D
CTLM3410-M832D:
CTLM7410-M832D:
CTLM3474-M832D:
100mA
500mA
dual npn 500ma
NPN/PNP transistor
CTLM3410-M832D
CTLM3474-M832D
CTLM7410-M832D
v30010
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GSO05553
Abstract: Q62702-G117 CFH77 HEMT marking P
Text: GaAs HEMT CFH 77 Target Data Sheet • • • • Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! MW-4 Type Marking Ordering Code
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Q62702-G117
GSO05553
GSO05553
Q62702-G117
CFH77
HEMT marking P
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cfh marking
Abstract: smd marking zz
Text: Mechanical Dimensions CFH Series Crystal 3.2x2.5x.80mm Ceramic SMD RoHS Compliant 12.000MHz to 50.000MHz Dimensions are in millimeters Electrical SpecificaƟons Frequency Range 12.00MHz to 50.000MHz OperaƟng Temperature Range -10° to 60°C, -20 to 70°C or –40° to 85°C
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000MHz
000MHz
00MHz
999MHz
cfh marking
smd marking zz
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74923
Abstract: dg s22
Text: Infineon ^«cfrnciogies P-HEMT CFH 400T Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; Ga = 15.8 dB @ 3 V; 1 0 m A ;/= 1.8 GHz • • Suitable for PCS CDMA and UMTS applications
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k0604
Abstract: MAX 8985 zo 607 p 408 8772 P pseudomorphic HEMT GSO05553 S221 Q62705-K0603 ZO 607 MA 135
Text: GaAs HEMT CFH 120 Preliminary Data Sheet • • • • • Low noise pseudomorphic HEMT with high associated gain Low cost plastic package For low noise front end amplifiers up to 20 GHz For DBS down-converters Fully RF tested at 12 GHz 3 2 4 1 ESD: Electrostatic discharge sensitive device,
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Q62705-K0603
Q62705-K0604
GSO05553
k0604
MAX 8985
zo 607 p 408
8772 P
pseudomorphic HEMT
GSO05553
S221
Q62705-K0603
ZO 607 MA 135
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NPN/PNP transistor
Abstract: CTLM3410M832D CTLM3410-M832D CTLM3474-M832D CTLM7410-M832D TLM832D
Text: CTLM3410-M832D CTLM7410-M832D CTLM3474-M832D SURFACE MOUNT DUAL, LOW VCE SAT SILICON TRANSISTORS TLM832D CASE MARKING CODES: CTLM3410-M832D: CFG CTLM7410-M832D: CFH CTLM3474-M832D: CFJ APPLICATIONS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLM3410M832D (Dual NPN), CTLM7410-M832D (Dual PNP),
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CTLM3410-M832D
CTLM7410-M832D
CTLM3474-M832D
TLM832D
CTLM3410-M832D:
CTLM7410-M832D:
CTLM3474-M832D:
CTLM3410M832D
NPN/PNP transistor
CTLM3410M832D
CTLM3410-M832D
CTLM3474-M832D
CTLM7410-M832D
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transistor SMD MARKING CODE 772
Abstract: smd Transistor 1117 marking code 933 SMD Transistor SMD CODE MARKING 1046 SMD MARKING CODE WG sot-343 transistor smd code 404
Text: P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost miniature package P-SOT343-4-1
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P-SOT343-4-1
Q62702-G0116
RN/50
GPS05605
transistor SMD MARKING CODE 772
smd Transistor 1117
marking code 933 SMD Transistor
SMD CODE MARKING 1046
SMD MARKING CODE WG sot-343
transistor smd code 404
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UMTS
Abstract: 6943-3
Text: In fineon *B£ h C IOQ ¡ Ùi P-HEMT CFH 800 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz • Suitable for PCS CDMA and UMTS applications F = 0.52 dB; GA = 15.2 dB @ 3 V; 20 mA; / = 1.8 GHz
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P-SOT343-4-1
UMTS
6943-3
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transistor s11 s12 s21 s22
Abstract: SMD MARKING CODE WG sot-343 smd marking 1331 sot 6943-3 SMD TRANSISTOR 701 325 diode din 4147 GPS05605 marking code s22 smd marking s22 cfh marking
Text: P-HEMT CFH 800 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz • Suitable for PCS CDMA and UMTS applications F = 0.52 dB; GA = 15.2 dB @ 3 V; 20 mA; f = 1.8 GHz • Low cost miniature package P-SOT343-4-1
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P-SOT343-4-1
RN/50
GPS05605
transistor s11 s12 s21 s22
SMD MARKING CODE WG sot-343
smd marking 1331 sot
6943-3
SMD TRANSISTOR 701 325
diode din 4147
GPS05605
marking code s22
smd marking s22
cfh marking
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42827
Abstract: No abstract text available
Text: P-HEMT CFH 800T Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz • Suitable for PCS CDMA and UMTS applications F = 0.52 dB; GA = 14.5 dB @ 3 V; 20 mA; f = 1.8 GHz • Low cost ultra miniature package P-TSFP-4
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RN/50
GPX09267
42827
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transistor SMD MARKING CODE 772
Abstract: SMD MARKING CODE 201 952 transistor zo 607 zo 607 MA smd Transistor 1117 transistor smd code marking 404 DSA0062290 transistor zo 107 in 4436 zo 607
Text: P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost miniature package P-SOT343-4-1
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P-SOT343-4-1
Q62702-G0116
RN/50
GPS05605
transistor SMD MARKING CODE 772
SMD MARKING CODE 201 952
transistor zo 607
zo 607 MA
smd Transistor 1117
transistor smd code marking 404
DSA0062290
transistor zo 107
in 4436
zo 607
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Untitled
Abstract: No abstract text available
Text: Infineon b i i c l ü ç i i es P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz jp = 0.55 dB; Ga - 15.7 dB @ 3 V; 1 0 m A ;/= 1.8 GHz • Suitable for PCS CDMA and UMTS applications
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P-SOT343-4-1
Q62702-G0116
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SMD MARKING CODE WG sot-343
Abstract: ZO 103 MA 75 715 smd marking s22 SMD TRANSISTOR 701 325 SMD CODE MARKING 1046 smd marking 271 Sot smd transistor marking GA 04435
Text: P-HEMT CFH 800 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz • Suitable for PCS CDMA and UMTS applications F = 0.52 dB; GA = 15.2 dB @ 3 V; 20 mA; f = 1.8 GHz • Low cost miniature package P-SOT343-4-1
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P-SOT343-4-1
RN/50
GPS05605
SMD MARKING CODE WG sot-343
ZO 103 MA 75 715
smd marking s22
SMD TRANSISTOR 701 325
SMD CODE MARKING 1046
smd marking 271 Sot
smd transistor marking GA
04435
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SMD CODE MARKING 1046
Abstract: 74923 72482
Text: P-HEMT CFH 400T Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.8 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost ultra miniature package P-TSFP-4
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RN/50
GPX09267
SMD CODE MARKING 1046
74923
72482
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smd code book
Abstract: SMD MARKING CODE WG 4.00t
Text: GaAs HEMT CFH 400T Target Data Sheet • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4 GHz F = 0.65 dB; Ga = 17.5 dB @ 3 V; 15 mA; f = 2 GHz Suitable for PCS CDMA and UMTS applications Low cost ultra miniature package P-TSFP-4-1
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GPX09267
smd code book
SMD MARKING CODE WG
4.00t
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P-SOT-143
Abstract: CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 Q62702-F1215 G69 marking
Text: GaAs Components Infineon t »c h n o !o g i ss Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1
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CFY30
1900C
Q62702-L0132
Q62702-L0131
Q62702-F1215
Q62702-F1391
Q62705-K0603
Q62705-K0604
Q62702-G0116
P-SOT-143
CSY210
Type CF 739 Marking Ordering Code MSs
P-SOT343-4-1
cly5
P-SOT143-4-1
G69 marking
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Q68000-A8370
Abstract: CGY MW
Text: GaAs Components Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1 170 CF 739 MSs Q62702-F1215
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1900C
Q62702-L0132
Q62702-L0131
Q62702-F1215
Q62702-F1391
Q62705-K0603
Q62705-K0604
Q62702-G0116
Q62703-F97
Q68000-A8370
CGY MW
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377 03397
Abstract: marking h3s Q62705-K0604
Text: In fineon ! « £ h n c> o $ i e s G aA sH E M T C F H 120 Preliminary Data Sheet • • • • • Low noise pseudomorphic HEMT with high associated gain Low cost plastic package For low noise front end amplifiers up to 20 GHz For DBS down-converters Fully RF tested at 12 GHz
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Q62705-K0603
Q62705-K0604
soldering59
377 03397
marking h3s
Q62705-K0604
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