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    5252 F 1104

    Abstract: 5252 F 1007 5252 F 1005 800T HEMT marking P
    Text: CFH800T P - HEMT Target Datasheet Features • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications


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    PDF CFH800T 5252 F 1104 5252 F 1007 5252 F 1005 800T HEMT marking P

    FMCW Radar

    Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
    Text: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.


    Original
    PDF 3800-Pirituba E-28760 DK-2750 FMCW Radar radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"

    42827

    Abstract: No abstract text available
    Text: Infineon * e c h n * !ú £ |iú i P-HEMT CFH800T Preliminary Data Sheet • Low noise figure and high associated gain for high 1P3 receiver stages up to 4 GHz • Suitable for PCS CDMA and UMTS applications F - 0.52 dB; GA = 14.5 dB @ 3 V; 20 mA; / = 1.8 GHz


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    PDF CFH800T 42827