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    CFY 65 Search Results

    CFY 65 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CFY65-12 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    CFY65-12 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    CFY65-14 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    CFY65-14 Unknown Shortform Datasheet & Cross References Data Short Form PDF

    CFY 65 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GSO05553

    Abstract: Q62702-F1393 Q62702-F1394 smd 3520 CFY 35-23 GaAs FET cfy 14 CFY 19 CFY 65
    Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393


    Original     		Q62702-F1393 Q62702-F1394 GSO05553 GSO05553 Q62702-F1393 Q62702-F1394 smd 3520 CFY 35-23 GaAs FET cfy 14 CFY 19 CFY 65 PDF

    SMD MARKING CODE 901

    Abstract: CFY 19 CFY 10 GaAs FET cfy 14
    Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393


    Original     		Q62702-F1393 Q62702-F1394 GSO05553 SMD MARKING CODE 901 CFY 19 CFY 10 GaAs FET cfy 14 PDF

    GaAs FET cfy 19

    Abstract: CFY 35-20 F1393 f1394 GSO05553 Q62702-F1393 Q62702-F1394 smd code marking 814 cfy 19
    Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393


    Original     		Q62702-F1394 Q62702-F1393 GSO05553 GaAs FET cfy 19 CFY 35-20 F1393 f1394 GSO05553 Q62702-F1393 Q62702-F1394 smd code marking 814 cfy 19 PDF

    GaAs FET cfy 14

    Abstract: GaAs FET cfy 19 CFY 10 marking K gaas fet Ga FET marking k F1393 Q62702-F1393 Q62702-F1394 f5035 cfy 19
    Text: CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters ESD: Electrostatic discharge sensitive device,


    Original     		Q62702-F1393 Q62702-F1394 GaAs FET cfy 14 GaAs FET cfy 19 CFY 10 marking K gaas fet Ga FET marking k F1393 Q62702-F1393 Q62702-F1394 f5035 cfy 19 PDF

    d-10

    Abstract: gaas fet marking a GaAs FET cfy 19 CFY 35-20 F1393 f1394 marking code 5 Q62702-F1393 Q62702-F1394 siemens gaas fet
    Text: CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters ESD: Electrostatic discharge sensitive device,


    Original     		Q62702-F1393 Q62702-F1394 d-10 gaas fet marking a GaAs FET cfy 19 CFY 35-20 F1393 f1394 marking code 5 Q62702-F1393 Q62702-F1394 siemens gaas fet PDF

    cfy siemens

    Abstract: CFY77-10 cfy77 HEMT marking P 059 906 051 CFY77-08 Q62702-F1549 Q62702-F1559 cfy 14 siemens HEMT marking K
    Text: AlGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters


    Original     		CFY77-08 Q62702-F1549 CFY77-10 Q62702-F1559 cfy siemens CFY77-10 cfy77 HEMT marking P 059 906 051 CFY77-08 Q62702-F1549 Q62702-F1559 cfy 14 siemens HEMT marking K PDF

    F5049

    Abstract: siemens gaas fet 76 marking code SIEMENS gaas fet marking a CFY30 HL 050 118 31 04 FET marking code FET marking codes FET transistors with s-parameters Q62703-F97
    Text: CFY 30 GaAs FET Datasheet * Low noise Fmin = 1.4 dB @ 4 GHz * High gain ( 11.5 dB typ. @ 4 GHz ) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz


    Original     		Q62703-F97 OT-143 F5049 siemens gaas fet 76 marking code SIEMENS gaas fet marking a CFY30 HL 050 118 31 04 FET marking code FET marking codes FET transistors with s-parameters PDF

    CFY 10

    Abstract: gaas fet marking a Ga FET marking k CFY 19 cfy 14 d marking Micro-X CFY 18 GaAs FET cfy 19 GaAs Amplifier Micro-X Marking k Q62703-F106
    Text: GaAs FET ● ● ● ● ● CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel Pin Configuration


    Original     		Q62703-F106 Q62703-F107 Q62703-F108 CFY 10 gaas fet marking a Ga FET marking k CFY 19 cfy 14 d marking Micro-X CFY 18 GaAs FET cfy 19 GaAs Amplifier Micro-X Marking k Q62703-F106 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs FET CFY 30 Data Sheet • Low noise Fmin = 1.4 dB @ 4 GHz • High gain (11.5 dB typ. @ 4 GHz) • For oscillators up to 12 GHz • For amplifiers up to 6 GHz • Ion implanted planar structure • Chip all gold metallization • Chip nitride passivation


    Original     		OT-143 Q62703-F97 P-SOT143-4-1 GPS05559 PDF

    GaAs FET cfy 14

    Abstract: marking code s22 GPS05559 Q62703-F97 MARKING code GM SOT 323 SMD Transistor Marking Code 71 SOT 23 smd transistor cfy P-SOT-143-4-1 GaAs FET cfy 19
    Text: GaAs FET CFY 30 Data Sheet • Low noise Fmin = 1.4 dB @ 4 GHz • High gain (11.5 dB typ. @ 4 GHz) • For oscillators up to 12 GHz • For amplifiers up to 6 GHz • Ion implanted planar structure • Chip all gold metallization • Chip nitride passivation


    Original     		OT-143 Q62703-F97 P-SOT143-4-1 GPS05559 GaAs FET cfy 14 marking code s22 GPS05559 Q62703-F97 MARKING code GM SOT 323 SMD Transistor Marking Code 71 SOT 23 smd transistor cfy P-SOT-143-4-1 GaAs FET cfy 19 PDF

    GaAs FET cfy 14

    Abstract: Q62703-F97 CFY 18
    Text: GaAs FET ● ● ● ● ● ● ● CFY 30 Low noise Fmin = 1.4 dB at 4 GHz High gain (11.5 dB typ. at 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz lon-implanted planar structure Chip all gold metallization Chip nitride passivation ESD: Electrostatic discharge sensitive device, observe handling precautions!


    Original     		Q62703-F97 OT-143 GaAs FET cfy 14 Q62703-F97 CFY 18 PDF

    MARKING A2

    Abstract: smd transistor cfy GPS05559 Q62703-F97 MARKING code GM SOT 323 CFY30 P-SOT143-4-1 cfy transistor
    Text: GaAs FET CFY 30 Data Sheet • • • • • • • Low noise Fmin = 1.4 dB @ 4 GHz High gain (11.5 dB typ. @ 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion implanted planar structure Chip all gold metallization Chip nitride passivation


    Original     		OT-143 Q62703-F97 P-SOT-143-4-1 GPS05559 MARKING A2 smd transistor cfy GPS05559 Q62703-F97 MARKING code GM SOT 323 CFY30 P-SOT143-4-1 cfy transistor PDF

    GaAs FET cfy 19

    Abstract: S11 SIEMENS z0 607 MA 7a
    Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20


    OCR Scan     		V5005553 Q62702-F1393 Q62702-F1394 GaAs FET cfy 19 S11 SIEMENS z0 607 MA 7a PDF

    3tb 50 siemens

    Abstract: No abstract text available
    Text: SIEMENS CFY 35 GaAs FET • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20 NA Q62702-F1393


    OCR Scan     		Q62702-F1393 Q62702-F1394 535bD5 D155EÃ 3tb 50 siemens PDF

    GaAs FET cfy 14

    Abstract: No abstract text available
    Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration


    OCR Scan     		Q62702-F1393 Q62702-F1394 GaAs FET cfy 14 PDF

    CFY77-10

    Abstract: HEMT HEMT marking K 036 906 051 VS005553
    Text: SIEM ENS AIGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise *Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type


    OCR Scan     		VS005553 CFY77-08 CFY77-10 Q62702-F1549 Q62702-F1559 CFY77-10 HEMT HEMT marking K 036 906 051 VS005553 PDF

    Q62702-F1394

    Abstract: No abstract text available
    Text: Infineon faîhnoîogte» G aA s FET CFY 3 5 Data Sheet • • Low noise High gain • For low-noise front end amplifiers • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


    OCR Scan     		Q62702-F1393 Q62702-F1394 Q62702-F1394 PDF

    CFY65

    Abstract: CFY 65 siemens 230 97 o VXM05208
    Text: SIEMENS AIGaAs/GaAs HEMT CFY 65 • Very low noise F = 1.2 dB max. at 12 GHz • Very high gain (G a = 11.5dB typ. at 12 GHz) • For low-noise front-end amplifiers up to 20 GHz • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		VXM05208 Q62703-F101 Q62703-F102 E35L05 00b7534 CFY65 EHT08H7 EHT08I46 EHT08I48 CFY65 CFY 65 siemens 230 97 o VXM05208 PDF

    HEMT marking K

    Abstract: marking t54 CFY 18 CFY77-08 CFY77-10 Q62702-F1549 Q62702-F1559 cfy 14 siemens marking code 51C HEMT
    Text: SIEMENS AIGaAs / InGaAs HEMT CFY 77 D a t a s h e e t Features ‘ Very low noise ‘ Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		VS005553 CFY77-08 Q62702-F1549 CFY77-10 Q62702-F1559 chap18 S35bD5 HEMT marking K marking t54 CFY 18 cfy 14 siemens marking code 51C HEMT PDF

    ncl 071

    Abstract: ncl 052 ncl 058
    Text: Infineon technologies GaAs FET CFY 30 Data Sheet • Low noise {Fmin = 1.4 dB @ 4 GHz • High gain 11.5 dB typ. @ 4 GHz) • For oscillators up to 12 GHz • For amplifiers up to 6 GHz • Ion implanted planar structure • Chip all gold metallization • Chip nitride passivation


    OCR Scan     		Q62703-F97 P-SOT143-4-1 Val15 ncl 071 ncl 052 ncl 058 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CFY 30 GaAs FET • • • • • • • Low noise Fmin= 1.4 dB @ 4 GHz High gain (11.5 dB typ. @ 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion implanted planar structure Chip all gold metallization Chip nitride passivation


    OCR Scan     		Q62703-F97 OT-143 D15SS7b PDF

    cfy 19 siemens

    Abstract: No abstract text available
    Text: SIEMENS CFY 19 GaAs FET • • • • • Low noise High gain Ion-implanted planar structure All gold metallization For front ends • For oscillators • For antenna amplifiers from UHF up to 12 GHz • Hi rel/MIL tested upon request ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		Q62703-F14 Q62703-F3 G0b7502 00h7S03 cfy 19 siemens PDF

    5N521

    Abstract: CFY30
    Text: SIEMENS CFY 30 GaAs FET F eatures • Low noise /-'mm = 1.4 d B at 4 G Hz • High gain (11.5 dB typ. a l 4 GHz) • For o scillators up to 12 G Hz • For am p lifiers up to 6 GHz • Io n -im planted p lanar structure • C hip all gold m etallization


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CFY 35 GaAs FET Features • Low noise • High gain • Fo r lo w -noise front end am plifiers • Fo r D B S dow n co nverters 5:1 E S D : E le c tro sta tic d is c h a rg e se n sitive de v ice , o b se rv e handling pre ca utio ns! Type Marking


    OCR Scan     		PDF