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    CGH21240F Search Results

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    CGH21240F Price and Stock

    MACOM CGH21240F

    RF MOSFET HEMT 28V 440117
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH21240F Tray 13 1
    • 1 $722.88
    • 10 $701.088
    • 100 $701.088
    • 1000 $701.088
    • 10000 $701.088
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    Mouser Electronics CGH21240F
    • 1 -
    • 10 -
    • 100 $701.08
    • 1000 $701.08
    • 10000 $701.08
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    Richardson RFPD CGH21240F 1
    • 1 $1119.97
    • 10 $1119.97
    • 100 $1119.97
    • 1000 $1119.97
    • 10000 $1119.97
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    MACOM CGH21240F-AMP

    CGH21240F DEV BOARD WITH HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH21240F-AMP Box 2
    • 1 -
    • 10 $1248.875
    • 100 $1248.875
    • 1000 $1248.875
    • 10000 $1248.875
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    Richardson RFPD CGH21240F-AMP 1
    • 1 -
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    CGH21240F Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CGH21240F Wolfspeed GAN HEMT 28V 1.8-2.1GHZ Original PDF
    CGH21240F Wolfspeed GAN HEMT 28V 1.8-2.1GHZ Original PDF
    CGH21240F-AMP Wolfspeed CGH21240F DEV BOARD WITH HEMT Original PDF
    CGH21240F-AMP Wolfspeed CGH21240F DEV BOARD WITH HEMT Original PDF

    CGH21240F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CGH09120F

    Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
    Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR


    Original     		PDF CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F

    Untitled

    Abstract: No abstract text available
    Text: CGH21240F 240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for


    Original     		PDF CGH21240F CGH21240F CGH2124

    CGH21240F

    Abstract: transistor 17556 ATC600F CGH2124 17556 transistor ATC600S CGH21240F-TB JESD22 RO4350 13707
    Text: PRELIMINARY CGH21240F 240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for


    Original     		PDF CGH21240F CGH21240F CGH2124 transistor 17556 ATC600F CGH2124 17556 transistor ATC600S CGH21240F-TB JESD22 RO4350 13707

    ATC600F

    Abstract: ATC600S CGH2124 CGH21240F CGH21240F-TB RO4350
    Text: PRELIMINARY CGH21240F 240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for


    Original     		PDF CGH21240F CGH21240F CGH2124 ATC600F ATC600S CGH2124 CGH21240F-TB RO4350

    CGH21240F

    Abstract: transistor 17556
    Text: CGH21240F 240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for


    Original     		PDF CGH21240F CGH21240F CGH2124 CGH21240F-TB transistor 17556

    Gan on silicon transistor

    Abstract: Microwave Devices CDPA21480 MESFET CGH21240F LDMOS NONLINEAR digital Pre-distortion silicon carbide NONLINEAR MODEL LDMOS
    Text: AWR Success Story Cree Speeds Development of High-Performance GaN Doherty Amplifiers by 70% Microwave Office Capabilities Provide First-Pass Design Success of Complex 2.1-GHz Circuits Application: Gallium Nitride-based CUSTOMER BACKGROUND While Cree, Inc., based in Durham, NC, is best known outside the microwave


    Original     		PDF