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MACOM CGH35030F RF MOSFET HEMT 28V 440166
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH35030F	Tray	15		1	1 $119.42 10 $113.771 100 $113.771 1000 $113.771 10000 $113.771	Buy Now

CGH35030F Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGH35030F		Cree	30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX		Original	PDF

CGH35030F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	PDF	CGH35030F CGH35030F CGH3503
Untitled Abstract: No abstract text available Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	PDF	CGH35030F CGH35030F CGH3503
A 12-15 GHz High Gain Amplifier Abstract: HEADER RT Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	PDF	CGH35030F CGH35030F CGH3503 A 12-15 GHz High Gain Amplifier HEADER RT
transistor 8772 Abstract: 8772 transistor 470PF CGH35030F CGH35030-TB JESD22 Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	PDF	CGH35030F CGH35030F CGH3503 transistor 8772 8772 transistor 470PF CGH35030-TB JESD22
transistor 8772 Abstract: Transistor C 4927 8772 transistor CGH35030F Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	PDF	CGH35030F CGH35030F CGH3503 transistor 8772 Transistor C 4927 8772 transistor
RO4350B Abstract: CGH35030F CGH35030-TB 10UF 470PF Text: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	PDF	CGH35030F CGH35030F CGH3503 RO4350B CGH35030-TB 10UF 470PF
Untitled Abstract: No abstract text available Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	PDF	CGH35030F CGH35030F CGH3503
STR 5709 Abstract: No abstract text available Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	PDF	CGH35030F CGH35030F CGH3503 STR 5709
str 6754 Abstract: ts 1640-1 str 6754 circuit STR W 6754 6819 cree rf 10UF 470PF CGH35030F CGH35030-TB Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied	Original	PDF	CGH35030F CGH35030F CGH3503 str 6754 ts 1640-1 str 6754 circuit STR W 6754 6819 cree rf 10UF 470PF CGH35030-TB
CGH09120F Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR	Original	PDF	CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram CGH35015S GaN amplifier GaN photo diode operational amplifier discrete schematic Text: From June 2007 High Frequency Electronics Copyright 2007 Summit Technical Media, LLC High Frequency Design WiMAX AMPLIFIERS High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, Cree Inc., and	Original	PDF