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    CGH40025 Search Results

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    CGH40025 Price and Stock

    MACOM CGH40025F

    RF MOSFET HEMT 28V 440166
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH40025F Tray 646 1
    • 1 $133.12
    • 10 $133.12
    • 100 $133.12
    • 1000 $133.12
    • 10000 $133.12
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    Mouser Electronics CGH40025F
    • 1 $151.71
    • 10 $143.33
    • 100 $143.33
    • 1000 $143.33
    • 10000 $143.33
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    Verical CGH40025F 39 1
    • 1 $251.2
    • 10 $251.2
    • 100 $251.2
    • 1000 $251.2
    • 10000 $251.2
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    Richardson RFPD CGH40025F 39 1
    • 1 $251.2
    • 10 $251.2
    • 100 $251.2
    • 1000 $251.2
    • 10000 $251.2
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    MACOM CGH40025F-AMP

    CGH40025F DEV BOARD WITH HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH40025F-AMP Box 3 1
    • 1 $799.82
    • 10 $799.82
    • 100 $799.82
    • 1000 $799.82
    • 10000 $799.82
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    Mouser Electronics CGH40025F-AMP 2
    • 1 $783.57
    • 10 $783.57
    • 100 $783.57
    • 1000 $783.57
    • 10000 $783.57
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    Richardson RFPD CGH40025F-AMP 1
    • 1 -
    • 10 -
    • 100 -
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    MACOM CGH40025P

    RF MOSFET HEMT 28V 440196
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH40025P Tray 250
    • 1 -
    • 10 -
    • 100 -
    • 1000 $139.6918
    • 10000 $139.6918
    		Buy Now
    Mouser Electronics CGH40025P 20
    • 1 $191.71
    • 10 $179.55
    • 100 $170.11
    • 1000 $170.11
    • 10000 $170.11
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    Richardson RFPD CGH40025P 80
    • 1 -
    • 10 -
    • 100 $160.42
    • 1000 $160.42
    • 10000 $160.42
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    MACOM CGH40025F-TB

    RF Power GaN HEMT BOARD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical CGH40025F-TB 2 2
    • 1 -
    • 10 $666.7
    • 100 $666.7
    • 1000 $666.7
    • 10000 $666.7
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    Richardson RFPD CGH40025F-TB 2 1
    • 1 $400
    • 10 $400
    • 100 $400
    • 1000 $400
    • 10000 $400
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    Cree, Inc. CGH40025F

    RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, C BAND, GALLIUM NITRIDE, N-CHANNEL, HIGH ELECTRON MOBILITY FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components CGH40025F 1
    • 1 $116.025
    • 10 $116.025
    • 100 $116.025
    • 1000 $116.025
    • 10000 $116.025
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    Find more CGH40025 price and stock on Findchips.com

    CGH40025 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH40025F Cree RF FETs, Discrete Semiconductor Products, TRANS 25W RF GAN HEMT 440166 PKG Original PDF
    CGH40025F Cree 25 W, RF Power GaN HEMT Original PDF
    CGH40025F-AMP Wolfspeed CGH40025F DEV BOARD WITH HEMT Original PDF
    CGH40025F-AMP Wolfspeed CGH40025F DEV BOARD WITH HEMT Original PDF
    CGH40025F-TB Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD DEMO AMP CIRCUIT CGH40025 Original PDF

    CGH40025 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STR F 6168

    Abstract: CGH40025-TB j326 CGH40025 Cree Microwave CGH40025F JESD22 40025F CGH40025P hemt .s2p
    Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F STR F 6168 CGH40025-TB j326 Cree Microwave CGH40025F JESD22 40025F CGH40025P hemt .s2p

    Untitled

    Abstract: No abstract text available
    Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F

    str w 6554 a

    Abstract: str 6554 str w 6554 STR 6754 RO4350 RO4350B 0618 Cree Microwave STR 6554 a CGH40025
    Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain


    Original     		PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F str w 6554 a str 6554 str w 6554 STR 6754 RO4350 RO4350B 0618 Cree Microwave STR 6554 a

    STR F 6168

    Abstract: CGH40025 40025F CGH40025P CGH40025F CGH40025-TB
    Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F STR F 6168 40025F CGH40025P CGH40025F CGH40025-TB

    STR F 6168

    Abstract: CGH40025F CGH40025-TB CGH40025 JESD22
    Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F STR F 6168 CGH40025F CGH40025-TB JESD22

    STR F 6168 31 v power

    Abstract: STR F 6168 CGH40025P CGH40025 CGH40025F CGH40025-TB JESD22 rt 0608 MAG-S11 STR F 6168 31
    Text: CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high


    Original     		PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F STR F 6168 31 v power STR F 6168 CGH40025P CGH40025F CGH40025-TB JESD22 rt 0608 MAG-S11 STR F 6168 31

    str w 6556 a

    Abstract: str w 6556 str 6556 str 6708 STR 6553 CGH40025F CGH40025 str F 6256 CW 7805 str 6556 a
    Text: PRELIMINARY CGH40025F 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer


    Original     		PDF CGH40025F CGH40025 CGH40025, CGH4002 str w 6556 a str w 6556 str 6556 str 6708 STR 6553 CGH40025F str F 6256 CW 7805 str 6556 a

    str w 6556

    Abstract: str w 6556 a CGH40025-TB str 6556 str F 6256 10UF 470PF CGH40025 CGH40025F str 6708
    Text: PRELIMINARY CGH40025 25 W, RF Power GaN HEMT Cree’s CGH40025 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain


    Original     		PDF CGH40025 CGH40025 CGH40025, CGH4002 40025F str w 6556 str w 6556 a CGH40025-TB str 6556 str F 6256 10UF 470PF CGH40025F str 6708

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    transistor c3909

    Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


    Original     		PDF APPNOTE-006 transistor c3909 pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor

    CGH55030F2

    Abstract: No abstract text available
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2

    CGH55030F2

    Abstract: CGH55030P2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE

    on 5295 transistor

    Abstract: CGH27030 CGH27030F CGH27030-TB CGH40025F JESD22
    Text: CGH27030 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27030 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030


    Original     		PDF CGH27030 CGH27030 CGH2703 27030F CGH27030F on 5295 transistor CGH27030-TB CGH40025F JESD22

    transistor p98

    Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


    Original     		PDF CGH40025F APPNOTE-006 transistor p98 P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57

    hemt .s2p

    Abstract: No abstract text available
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 hemt .s2p

    CGH55030P2

    Abstract: CGH5503 CGH55030 CGH55030F2 CGH55030-TB JESD22
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22

    ATC600L

    Abstract: CGH55030F2 ATC600S CGH55030 CGH55030P2 CGH5503 cree driver CGH40025F CGH55030-TB CGH55
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 ATC600L ATC600S CGH55030 CGH5503 cree driver CGH40025F CGH55030-TB CGH55

    CGH40025P

    Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
    Text: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors


    Original     		PDF