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    CGHV22200 Price and Stock

    MACOM CGHV22200-TB

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    CGHV22200 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGHV22200F Cree RF FETs, Discrete Semiconductor Products, MOSF RF 125V 12A 2.2GHZ 440162 Original PDF
    CGHV22200-TB Cree RF FETs, Discrete Semiconductor Products, MOSF RF 125V 12A 2.2GHZ 440162 Original PDF

    CGHV22200 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2


    Original     		CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P PDF

    Untitled

    Abstract: No abstract text available
    Text: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2


    Original     		CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P PDF

    CGHV22200

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P CGHV22200-TBions PDF

    idq10

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P CGHV22200-TBions idq10 PDF