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    CGHV96050F2 Search Results

    CGHV96050F2 Datasheets (3)

    Part
    ECAD Model
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    Description
    Datasheet Type
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    CGHV96050F2
    Cree RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 50W Original PDF 12
    CGHV96050F2-AMP
    Wolfspeed CGHV96050F2 DEV BOARD WITH HEMT Original PDF 1.15MB
    CGHV96050F2-TB
    Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96050F2 Original PDF 12
    SF Impression Pixel

    CGHV96050F2 Price and Stock

    MACOM
    MACOM

    MACOM CGHV96050F2

    GaN FETs GaN HEMT 7.9-9.6GHz, 50 Watt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CGHV96050F2
    • 1 $985.85
    • 10 $985.85
    • 100 $985.85
    • 1000 $985.85
    • 10000 $985.85
    Get Quote

    MACOM CGHV96050F2-AMP

    RF Development Tools Amplifier, 8.4-9.6GHz, CGHV96050F2 GaN HEMT is included
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CGHV96050F2-AMP
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    MACOM CGHV96050F2-TB

    CGHV96050F2-TB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical CGHV96050F2-TB 2 2
    • 1 -
    • 10 $666.70
    • 100 $666.70
    • 1000 $666.70
    • 10000 $666.70
    Buy Now

    CGHV96050F2 Datasheets Context Search

    Catalog Datasheet
    Type
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    PDF

    CGHV96050F2

    Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original
    CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2 PDF

    Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original
    CGHV96050F2 50-ohm, CGHV96050F2 PDF

    CGHV96050F2

    Abstract: CGHV96
    Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original
    CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2 PDF