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    CHA50 Price and Stock

    United Monolithic Semiconductors CHA5014-99F

    CHA5014-99F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical CHA5014-99F 150 2
    • 1 -
    • 10 $64.85
    • 100 $64.85
    • 1000 $64.85
    • 10000 $64.85
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    CHA5014-99F 28 2
    • 1 -
    • 10 $64.85
    • 100 $64.85
    • 1000 $64.85
    • 10000 $64.85
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    Richardson RFPD CHA5014-99F 150 50
    • 1 -
    • 10 -
    • 100 $64.82
    • 1000 $64.82
    • 10000 $64.82
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    SMC Corporation of America CHA50-PS

    SEAL KIT, for CH series hydraulic cylinder | SMC Corporation CHA50-PS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS CHA50-PS Bulk 1
    • 1 $50.34
    • 10 $50.34
    • 100 $50.34
    • 1000 $50.34
    • 10000 $50.34
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    SMC Corporation of America CHA50GAK3998-125

    Rod Boot, 50mm Bore, 125mm Stroke, CHA Series | SMC Corporation CHA50GAK3998-125
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS CHA50GAK3998-125 Bulk 5 Weeks 1
    • 1 $80.48
    • 10 $80.48
    • 100 $80.48
    • 1000 $80.48
    • 10000 $80.48
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    SMC Corporation of America CHA50GCK3998-R-125

    Rod Boot, 50mm Bore, 125mm Stroke, CHA Series | SMC Corporation CHA50GCK3998-R-125
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS CHA50GCK3998-R-125 Bulk 5 Weeks 1
    • 1 $86
    • 10 $86
    • 100 $86
    • 1000 $86
    • 10000 $86
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    KEMET Corporation T429H107K015CH 4250 D500

    Tantalum Capacitors - Solid SMD 100UF 15V 10% H
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI T429H107K015CH 4250 D500 Reel 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $20.59
    • 10000 $20.19
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    CHA50 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CHA5010a99X/00 United Monolithic Semiconductors X Band Driver Amplifier Original PDF
    CHA5010B United Monolithic Semiconductors X Band Driver Amplifier Original PDF
    CHA5010b99F/00 United Monolithic Semiconductors X Band Driver Amplifier Original PDF
    CHA5012 United Monolithic Semiconductors X Band Driver Amplifier Original PDF
    CHA5042 United Monolithic Semiconductors 13-16GHz High Power Amplifier Original PDF
    CHA5042-99F/00 United Monolithic Semiconductors 13-16GHz high power amplifier Original PDF
    CHA5042-MFF United Monolithic Semiconductors 13-17 GHz Power Amplifier Original PDF
    CHA5051 United Monolithic Semiconductors 7-16GHz Medium Power Amplifier Original PDF
    CHA5051-QDG United Monolithic Semiconductors 7-16GHz Medium Power Amplifier Original PDF
    CHA5052 United Monolithic Semiconductors 7-16GHz High Power Amplifier Original PDF
    CHA5052-QGG United Monolithic Semiconductors 7-16GHz High Power Amplifier Original PDF
    CHA5056 United Monolithic Semiconductors 17-27GHz High Power Amplifier Original PDF
    CHA5056-QGG United Monolithic Semiconductors 17-27GHz High Power Amplifier Original PDF
    CHA5082-99F/00 United Monolithic Semiconductors S Band Power Amplifier Original PDF
    CHA5093 United Monolithic Semiconductors 22-26GHz High Power Amplifier Original PDF
    CHA5093-99F/00 United Monolithic Semiconductors 22-26GHz High Power Amplifier Original PDF
    CHA5093-99X/00 United Monolithic Semiconductors 24-26GHz High Power Amplifier Original PDF
    CHA5093TCF United Monolithic Semiconductors 24-26GHz High Power Amplifier Original PDF
    CHA5093TCF/24 United Monolithic Semiconductors 24-26GHz high power amplifier Original PDF
    CHA5094-99F/00 United Monolithic Semiconductors 36-40GHz High Power Amplifier Original PDF

    CHA50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN0020

    Abstract: CHA5014 9v23
    Text: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to


    Original
    PDF CHA5014 CHA5014 30dBm DSCHA50140112 AN0020 9v23

    A5052A

    Abstract: AN0017 CHA5052
    Text: CHA5052aQGG RoHS COMPLIANT 7-16GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA5052aQGG is a monolithic high power amplifier. UMS A5052A YYWW three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes


    Original
    PDF CHA5052aQGG 7-16GHz CHA5052aQGG A5052A 7-16GHz 37dBm 29dBm 700mA 28LQFN5x5 DSCHA5052aQGG8294 A5052A AN0017 CHA5052

    CHA5051

    Abstract: No abstract text available
    Text: CHA5051 RoHS COMPLIANT 7-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5051 is a high gain three-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication


    Original
    PDF CHA5051 7-16GHz CHA5051 7-16GHz 25dBm DSCHA50517152

    AN0017

    Abstract: CHA5051-QDG
    Text: CHA5051-QDG RoHS COMPLIANT 7-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA5051-QDG is a high gain threestage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial


    Original
    PDF CHA5051-QDG 7-16GHz CHA5051-QDG 7-16GHz 25dBm 310mA 24LQFN4x4 DSCHA5051-QDG7152 AN0017

    AN0017

    Abstract: CHA5056-QGG
    Text: CHA5056-QGG RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5056-QGG is a monolithic high power amplifier. three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes


    Original
    PDF CHA5056-QGG 17-27GHz CHA5056-QGG 17-27GHz 38dBm 890mA 28LQFN5x5 DSCHA5056QGG7033 AN0017

    CHA5012

    Abstract: No abstract text available
    Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description Main Features The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through


    Original
    PDF CHA5012 CHA5012 DSCHA50126066

    CHA5093TCF/24

    Abstract: RO4003 CHA5093TCF AN0005 Rogers RO4003 substrate
    Text: CHA5093TCF 24-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The packaged monolithic microwave IC MMIC is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications,


    Original
    PDF CHA5093TCF 24-26GHz 24-26GHz 29dBm DSCHA50932035 04-Feb CHA5093TCF/24 RO4003 CHA5093TCF AN0005 Rogers RO4003 substrate

    Untitled

    Abstract: No abstract text available
    Text: CHA5092 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5092 is a high gain broadband twostage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF


    Original
    PDF CHA5092 22-26GHz CHA5092 22-26GHz 25dBm 400mA DSCHA50928155

    AN0005

    Abstract: CHA5093 CHA5093TCF
    Text: CHA5093TCF 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications,


    Original
    PDF CHA5093TCF 22-26GHz 22-26GHz 28dBm DSCHA5093TCF1257 14-Sept-01- AN0005 CHA5093 CHA5093TCF

    CHA5012

    Abstract: No abstract text available
    Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride


    Original
    PDF CHA5012 CHA5012 DSCHA50120179

    Untitled

    Abstract: No abstract text available
    Text: CHA5014-99F RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to


    Original
    PDF CHA5014-99F CHA5014 30dBm DSCHA50141097

    SAS 251

    Abstract: for 2090 ic chip
    Text: CHA5010b RoHS COMPLIANT X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010b is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and


    Original
    PDF CHA5010b CHA5010b 27dBm DSCHA50100096 05-Apr-00 SAS 251 for 2090 ic chip

    Untitled

    Abstract: No abstract text available
    Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride


    Original
    PDF CHA5012 CHA5012 DSCHA50120179

    monolithic amplifier MAR

    Abstract: 22-26GHz
    Text: CHA5092 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5092 is a high gain broadband twostage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF


    Original
    PDF CHA5092 22-26GHz CHA5092 22-26GHz 25dBm 400mA DSCHA50920096 -05-Mar-00 monolithic amplifier MAR

    04 monolithic amplifier

    Abstract: No abstract text available
    Text: CHA5082 S Band Power Amplifier GaAs Monolithic Microwave IC Description The CHA5082 is a S band monolithic three stage power driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.


    Original
    PDF CHA5082 CHA5082 27dBm -20dBm) DSCHA50826354 04 monolithic amplifier

    CHA5056

    Abstract: No abstract text available
    Text: CHA5056 RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC Description Vd3 Vd2 Vd1 The CHA5056 is three-stage monolithic high power amplifier. RFout RFin The backside of the chip is both RF and DC grounds. This helps to simplify the assembly


    Original
    PDF CHA5056 17-27GHz CHA5056 17-27GHz 29dBm 940mA DSCHA50567211

    x-band power transistor

    Abstract: x band pulsed amplifier
    Text: CHA5010a X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010a is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.


    Original
    PDF CHA5010a CHA5010a 27dBm DSCHA50108117 x-band power transistor x band pulsed amplifier

    CHA5042

    Abstract: No abstract text available
    Text: CHA5042 13–16GHz High Power Amplifier GaAs Monolithic Microwave IC Description Main Features The CHA5042 is a three-stage pHEMT HPA MMIC designed for VSAT ground terminals and other radio applications. The CHA5042 provides 29.5dBm nominal output power at 1dB gain compression


    Original
    PDF CHA5042 16GHz CHA5042 13-16GHz 13-16GHz DSCHA50422218 -06-Aug

    CHA5042

    Abstract: CHA5042-MFF
    Text: CHA5042 13-17 GHz Power Amplifier GaAs Monolithic Microwave IC Description The CHA5042 is a compact three-stage PHEMT HPA MMIC designed for VSAT ground terminals and other radio applications. It provides typically more than 27dBm nominal output power at 1dB gain compression over the


    Original
    PDF CHA5042 CHA5042 27dBm 13-17GHz 10-lead DSCHA50423141 CHA5042-MFF

    CHA5056

    Abstract: No abstract text available
    Text: CHA5056 RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC Description Vd3 Vd2 Vd1 The CHA5056 is three-stage monolithic high power amplifier. RFout RFin The backside of the chip is both RF and DC grounds. This helps to simplify the assembly


    Original
    PDF CHA5056 17-27GHz CHA5056 17-27GHz 29dBm 940mA DSCHA50567211

    CHA5012

    Abstract: No abstract text available
    Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through


    Original
    PDF CHA5012 CHA5012 DSCHA50126286

    CHA5050-QDG

    Abstract: 7812 7912
    Text: CHA5050-QDG RoHS COMPLIANT 17-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5050-QDG is a medium power amplifier four stages monolithic circuit. It is designed for a wide range of applications, from military to commercial


    Original
    PDF CHA5050-QDG 17-24GHz CHA5050-QDG A5050 17-24GHz 25dBm 30dBm 230mA 24L-QFN4x4 DSCHA5050QDG1216 7812 7912

    SAS 251

    Abstract: No abstract text available
    Text: CHA5010b X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010b is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.


    Original
    PDF CHA5010b CHA5010b 27dBm DSCHA50100096 05-Apr-00 SAS 251

    BP 109 transistor

    Abstract: No abstract text available
    Text: u n ite d m o n o lit h ic se m ico n d u cto rs CHA5093 22-26GHz High Power Amplifier GaAs Monolithic Microwave 1C Description Vg 1 Vg2 Vg3 The CHA5093 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to


    OCR Scan
    PDF CHA5093 22-26GHz CHA5093 28dBm 850mA DSCHA50939067 BP 109 transistor