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    CHARACTERISTICS DIODE 2N60 Search Results

    CHARACTERISTICS DIODE 2N60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    CHARACTERISTICS DIODE 2N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    UTC2N60L

    Abstract: utc 2n60l 2N60L 2N60L equivalent
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    2N60L 2N60L QW-R502-182 UTC2N60L utc 2n60l 2N60L equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-CB Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    2N60-CB 2N60-CB QW-R209-071 PDF

    2n60

    Abstract: 2n60b 2N60A UTC2N60 2n60 MOSFEt DC 2N60 mosfet 2n60 CHARACTERISTICS DIODE 2n60 2N60 UTC 2N60 TO-252
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    2N60L 2N60G QW-R502-053 2n60 2n60b 2N60A UTC2N60 2n60 MOSFEt DC 2N60 mosfet 2n60 CHARACTERISTICS DIODE 2n60 2N60 UTC 2N60 TO-252 PDF

    UTC 2N60L

    Abstract: UTC2N60L 222 diode 2N60L
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    2N60L 2N60L 2N60LL QW-R502-222 UTC 2N60L UTC2N60L 222 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    QW-R502-053 PDF

    2n60 MOSFEt

    Abstract: 2n60 2n60 equivalent 2N60 power mosfet 2N60A CHARACTERISTICS DIODE 2n60 2N60B 2n60l 2N60L equivalent UTC 2N60L
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    O-220 O-251 O-220F O-220F1 O-252 QW-R502-053 2n60 MOSFEt 2n60 2n60 equivalent 2N60 power mosfet 2N60A CHARACTERISTICS DIODE 2n60 2N60B 2n60l 2N60L equivalent UTC 2N60L PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60ZL Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60ZL is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    2N60ZL 2N60ZL QW-R502-830 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    QW-R502-053 PDF

    utc 2n60l

    Abstract: 2N60L equivalent UTC2N60L 2n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    2N60L O-220 O-251 2N60L O-220F O-220F1 O-252 QW-R502-222 utc 2n60l 2N60L equivalent UTC2N60L PDF

    2N60B

    Abstract: 2N60A 2N60 power mosfet 2N60 TO-251 UTC 2n60 2n60 MOSFEt 2N60G 2N60L equivalent utc 2n60l 2n60 equivalent
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 TO-220F 1 TO-220F1 FEATURES * RDS ON = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability


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    O-220 O-220F O-220F1 QW-R502-053 2N60B 2N60A 2N60 power mosfet 2N60 TO-251 UTC 2n60 2n60 MOSFEt 2N60G 2N60L equivalent utc 2n60l 2n60 equivalent PDF

    2n60b

    Abstract: 2N60A
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ 1 TO-220F 1 TO-220F1 FEATURES * RDS ON = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability


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    O-220 O-220F O-220F1 QW-R502-053 2n60b 2N60A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60-C Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    2N60-C 2N60-C 2N60L-TA3-T 2N60G-TA3-T 2N60L-TF3-T QW-R502-A46 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    QW-R502-053 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    2N60L 2N60L QW-R502-472 PDF

    utc 2n60l

    Abstract: UTC2N60L mosfet D 472
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    2N60L 2N60L QW-R502-472 utc 2n60l UTC2N60L mosfet D 472 PDF

    UTC2N60L

    Abstract: utc 2n60l 2A600V
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 „ DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    2N60L O-220 O-220F 2N60L O-220F1 O-220F2 QW-R502-472 UTC2N60L utc 2n60l 2A600V PDF

    2N60B

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    O-220 QW-R502-053 2N60B PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60Z Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


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    2N60Z 2N60Z QW-R502-829 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60K Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    2N60K 2N60K QW-R502-819 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original
    QW-R502-053 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    2N60L 2N60L QW-R502-472 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60K-MT Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


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    2N60K-MT 2N60K-MT QW-R502-B03 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    2N60L 2N60L QW-R502-472 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    QW-R502-053 PDF