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    CHARGE AMPLIFIER ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS6E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    CHARGE AMPLIFIER ARRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Linear Image sensor IC

    Abstract: G9212-512S C7557 C8061-01 C8062-01 G9205 G9211 G9211-256S VREF256
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS


    Original     		PDF G9211 G9214 G9205 G9208 G9214/G9205 SE-171 KMIR1011E06 Linear Image sensor IC G9212-512S C7557 C8061-01 C8062-01 G9211-256S VREF256

    G9205

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS


    Original     		PDF G9211 G9214 G9205 G9208 G9214/G9205 SE-171 KMIR1011E07

    MLX75306

    Abstract: Timing Generator for Frame Readout 8 bit LFSR for test pattern generation Melexis photodiode MLX75306KXZ-BAA-000-RE
    Text: MLX75306 rd 3 Generation Linear Optical Array General Description rd The MLX75306 is the Melexis 3 generation automotive linear optical sensor array, including a 142 x 1 array of photodiodes, associated charge amplifier circuitry and a pixel data-hold function that provides


    Original     		PDF MLX75306 MLX75306 ISO14001 Aug/12 Timing Generator for Frame Readout 8 bit LFSR for test pattern generation Melexis photodiode MLX75306KXZ-BAA-000-RE

    MLX75306

    Abstract: TZ12 640LSB CDF-AEC-Q100-002 SO16NB 8 bit LFSR for test pattern generation Melexis photodiode
    Text: MLX75306 3 Generation Linear Optical Array rd General Description rd The MLX75306 is the Melexis 3 generation automotive linear optical sensor array, including a 142 x 1 array of photodiodes, associated charge amplifier circuitry and a pixel data-hold function that provides


    Original     		PDF MLX75306 MLX75306 ISO14001 May/10 TZ12 640LSB CDF-AEC-Q100-002 SO16NB 8 bit LFSR for test pattern generation Melexis photodiode

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with


    Original     		PDF S9226 S9226 SE-171 KMPD1073E02

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with


    Original     		PDF S9226 S9226 SE-171 KMPD1073E05

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with


    Original     		PDF S9226 S9226 SE-171 KMPD1073E01

    s9226

    Abstract: linear cmos IMAGE SENSOR Hamamatsu Photonics KMPD1073E04 SE-171
    Text: IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with


    Original     		PDF S9226 S9226 10phone: SE-171 KMPD1073E04 linear cmos IMAGE SENSOR Hamamatsu Photonics KMPD1073E04

    linear image sensor

    Abstract: Photodiode-Array cmos linear array linear cmos IMAGE SENSOR s9226 KMPD1073E04 SE-171
    Text: IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with


    Original     		PDF S9226 S9226 10phone: SE-171 KMPD1073E04 linear image sensor Photodiode-Array cmos linear array linear cmos IMAGE SENSOR KMPD1073E04

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9201 to G9204 series Image sensor for DWDM wavelength monitor The G9201 to G9204 series are InGaAs linear image sensors designed for WDM monitor detectors in optical communications. These linear image sensors contain a CMOS charge amplifier array, a CDS circuit, an offset compensation circuit, a shift register


    Original     		PDF G9201 G9204 B1201, KMIR1012E08

    s9226

    Abstract: KMPD1073E04 SE-171 KMPDB0229EB
    Text: IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with


    Original     		PDF S9226 S9226 10phone: SE-171 KMPD1073E04 KMPD1073E04 KMPDB0229EB

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with


    Original     		PDF S9226 S9226 SE-171 KMPD1073E03

    jfet start up device

    Abstract: KMPD1073E05 S9226 SE-171 high frequency linear cmos IMAGE SENSOR charge amplifier
    Text: IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with


    Original     		PDF S9226 S9226 10hone: SE-171 KMPD1073E05 jfet start up device KMPD1073E05 high frequency linear cmos IMAGE SENSOR charge amplifier

    TS100

    Abstract: KMPD1073E04
    Text: PREVIOUS DATA IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with


    Original     		PDF S9226 S9226 SE-171 KMPD1073E04 TS100 KMPD1073E04

    Untitled

    Abstract: No abstract text available
    Text: Photodiode arrays with amplifier S8865-64/-128/-256 S8866-64-02/-128-02 Photodiode array combined with signal processing IC The S8865-64/-128/-256 and S8866-64-02/-128-02 are Si photodiode arrays combined with a signal processing IC chip. The signal processing IC chip is formed by CMOS process and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external circuit configuration simple. A long, narrow image sensor can also be


    Original     		PDF S8865-64/-128/-256 S8866-64-02/-128-02 S8865-64/-128/-256 S8866-64-02/-128-02 C9118 provid33- SE-171 KMPD1071E07

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


    Original     		PDF G9201 G9204 SE-171 KMIR1012E04

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an


    Original     		PDF G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E08

    Untitled

    Abstract: No abstract text available
    Text: NEW IMAGE SENSOR InGaAs linear image sensor G8050 to G8053 series Image sensors for DWDM monitor G8050 to G8053 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier made up of C-MOS


    Original     		PDF G8050 G8053

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


    Original     		PDF G9201 G9204 SE-171 KMIR1012E02

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9201 to G9204 series Image sensor for DWDM wavelength monitor G9201 to G9204 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


    Original     		PDF G9201 G9204 SE-171 KMIR1012E01

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9203-256D G9204-512D Near infrared 0.9 to 1.7 m image sensors The G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with


    Original     		PDF G9203-256D G9204-512D G9203-256D G9204-512D G9203-256D: G9204-512D: B1201, KMIR1013E06

    TSL1401

    Abstract: No abstract text available
    Text: 400 dpi 128 x 1 Linear Array with Hold Applications/End Equipment Description The TSL1401 linear sensor array with hold consists of 128 x 1 array photodiodes, associated charge amplifier circuitry, and a pixel data-hold function that provides simultaneous integration start and stop times for all pixels. The pixels measure 63.5 µm H by 55 µm (W) with


    Original     		PDF TSL1401

    G8053

    Abstract: G8053-512R G8053-512S G8050 G8050-256R G8050-256S G8051-512R G8051-512S G8052-256R G8052-256S
    Text: IMAGE SENSOR InGaAs linear image sensor G8050 to G8053 series Image sensor for DWDM wavelength monitor G8050 to G8053 series InGaAs linear image sensors are specifically designed as detectors for monitoring WDM in optical communications. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors,


    Original     		PDF G8050 G8053 SE-171 KMIR1009E03 G8053-512R G8053-512S G8050-256R G8050-256S G8051-512R G8051-512S G8052-256R G8052-256S

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G8160 to G8163/G8180 Near infrared detectors 0.9 to 1.67 pm/0.9 to 2.55 G8160 to G8163/G8180 series InGaAs linear image sensors are specifically designed as detectors for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier made up


    OCR Scan     		PDF G8160 G8163/G8180 G8163/G8180 SE-171