Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CHIP BONDING DIE Search Results

    CHIP BONDING DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    CHIP BONDING DIE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CPD73

    Abstract: No abstract text available
    Text: PROCESS CPD73 Bridge Rectifier Monolithic Quad Diode Bridge Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 +DC 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC)


    Original
    PDF CPD73 28-August CPD73

    CPD73

    Abstract: No abstract text available
    Text: PROCESS CPD73 Bridge Rectifier Monolithic Quad Diode Bridge Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 +DC 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC) 3.0 x 4.0 MILS Bonding Pad Area 4 (AC)


    Original
    PDF CPD73 22-March CPD73

    CP353V

    Abstract: CZT853
    Text: PROCESS CP353V Small Signal Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area


    Original
    PDF CP353V CZT853 23-May 435-182ess CP353V CZT853

    CHIP TRANSISTOR

    Abstract: transistor CP353V CZT853
    Text: PROCESS CP353V Small Signal Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area


    Original
    PDF CP353V CZT853 CHIP TRANSISTOR transistor CP353V CZT853

    CP353V

    Abstract: CZT853
    Text: PROCESS CP353V Small Signal Transistors NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area


    Original
    PDF CP353V CZT853 22-March CP353V CZT853

    transistor

    Abstract: CHIP TRANSISTOR CP753V CZT953
    Text: PROCESS CP753V Small Signal Transistors PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area


    Original
    PDF CP753V CZT953 transistor CHIP TRANSISTOR CP753V CZT953

    CP753V

    Abstract: CZT953 chip bonding die
    Text: PROCESS CP753V Small Signal Transistors PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area


    Original
    PDF CP753V CZT953 22-March CP753V CZT953 chip bonding die

    CP753V

    Abstract: CZT953
    Text: PROCESS CP753V Small Signal Transistors PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area


    Original
    PDF CP753V CZT953 23-May 435-182ess CP753V CZT953

    CPD73

    Abstract: BRIDGE RECTIFIER BRIDGE-RECTIFIER
    Text: Central PROCESS TM Semiconductor Corp. CPD73 Bridge Rectifier Monolithic Quad Diode Bridge Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Bonding Pad Area 1 +DC 3.0 x 3.0 MILS Bonding Pad Area 2 (AC) 3.0 x 7.0 MILS Bonding Pad Area 3 (-DC)


    Original
    PDF CPD73 CPD73 BRIDGE RECTIFIER BRIDGE-RECTIFIER

    CP237

    Abstract: 2n3725a 2N3725 transistor 2N3725 MPQ3725 MPQ3725A chip die npn transistor
    Text: PROCESS CP237 Central Small Signal Transistor TM Semiconductor Corp. NPN - Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 4.4 x 12.5 MILS Emitter Bonding Pad Area


    Original
    PDF CP237 2N3725 2N3725A MPQ3725 MPQ3725A CP237 2n3725a 2N3725 transistor 2N3725 MPQ3725 MPQ3725A chip die npn transistor

    2N3467 Die

    Abstract: 2N3467 2N3468 CP667
    Text: PROCESS CP667 Central Small Signal Transistor TM Semiconductor Corp. PNP- Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area


    Original
    PDF CP667 2N3467 2N3468 2N3467 Die 2N3467 2N3468 CP667

    CM5160

    Abstract: CP616 chip die pnp transistor chip die transistor
    Text: PROCESS CP616 Central Small Signal Transistor TM Semiconductor Corp. PNP - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.7 x 21.7 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 MILS DIAMETER Emitter Bonding Pad Area


    Original
    PDF CP616 CM5160 CM5160 CP616 chip die pnp transistor chip die transistor

    CM5583

    Abstract: CP618 chip die pnp transistor chip die transistor CM5-5
    Text: PROCESS CP618 Central Small Signal Transistor TM Semiconductor Corp. PNP - Silicon RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.7 x 21.7 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 MILS DIAMETER Emitter Bonding Pad Area


    Original
    PDF CP618 CM5583 CM5583 CP618 chip die pnp transistor chip die transistor CM5-5

    SILICON TRANSISTOR CORP

    Abstract: transistor CHIP TRANSISTOR CP307 ny transistor ELECTRONIC TRANSISTOR CORP equivalent mpsa14 mpsa14 MPSa14 equivalent 2N6426
    Text: PROCESS CP307 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area


    Original
    PDF CP307 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CXTA14 CZTA14 MPSA13 MPSA14 SILICON TRANSISTOR CORP transistor CHIP TRANSISTOR CP307 ny transistor ELECTRONIC TRANSISTOR CORP equivalent mpsa14 mpsa14 MPSa14 equivalent 2N6426

    2N3467

    Abstract: CP603 TRANSISTOR GUIDE 2N3468
    Text: Central PROCESS TM CP603 Small Signal Transistors Semiconductor Corp. PNP - Saturated Switch Transistor Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE 30 x 30 MILS DIE THICKNESS 7.5 MILS BASE BONDING PAD AREA 5.0 x 4.0 MILS EMITTER BONDING PAD AREA


    Original
    PDF CP603 2N3467 2N3468 2N3467 CP603 TRANSISTOR GUIDE 2N3468

    2N2369A

    Abstract: CMPT2369 CP207 chip die npn transistor chip die transistor transistor npn 29
    Text: Central TM Semiconductor Corp. PROCESS CP207 Small Signal Transistor NPN - Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 14 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 3.1 x 2.9 MILS Emitter Bonding Pad Area


    Original
    PDF CP207 2N2369A CMPT2369 16-August 435-111OCESS 2N2369A CMPT2369 CP207 chip die npn transistor chip die transistor transistor npn 29

    CMPT2369

    Abstract: 2N2369A CP207 chip die npn transistor
    Text: PROCESS CP207 Central Small Signal Transistor TM Semiconductor Corp. NPN - Saturated Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.0 x 14 MILS Die Thickness 8.0 MILS Base Bonding Pad Area 3.1 x 2.9 MILS Emitter Bonding Pad Area


    Original
    PDF CP207 2N2369A CMPT2369 435-11PROCESS CMPT2369 2N2369A CP207 chip die npn transistor

    transistor 2N3725

    Abstract: 2N3725 2N3725A CP215 MPQ3725 MPQ3725A
    Text: Central PROCESS TM CP215 Small Signal Transistors Semiconductor Corp. NPN - Saturated Switch Transistor Chip PROCESS DETAILS PROCESS EPITAXIAL PLANAR DIE SIZE 21 x 21 MILS DIE THICKNESS 9.0 MILS BASE BONDING PAD AREA 4.3 x 4.3 MILS EMITTER BONDING PAD AREA


    Original
    PDF CP215 2N3725 2N3725A MPQ3725 MPQ3725A transistor 2N3725 2N3725 2N3725A CP215 MPQ3725 MPQ3725A

    CP566

    Abstract: CMPT404A MPS404A chip die pnp transistor
    Text: PROCESS CP566 Central Small Signal Transistor TM Semiconductor Corp. PNP - Silicon Chopper Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31.5 x 31.5 MILS Die Thickness 11 MILS Base Bonding Pad Area 7.8 x 6.2 MILS Emitter Bonding Pad Area


    Original
    PDF CP566 CMPT404A MPS404A 435-CESS CP566 CMPT404A MPS404A chip die pnp transistor

    CP324

    Abstract: 2n7002 12 2N7002 equivalent 2N7002 chip die transistor
    Text: Central PROCESS TM Semiconductor Corp. CP324 Small Signal MOSFET Transistor N - Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.65 x 21.65 MILS Die Thickness 9.0 MILS Gate Bonding Pad Area 5.5 x 5.5 MILS Source Bonding Pad Area


    Original
    PDF CP324 2N7002 18-August CP324 2n7002 12 2N7002 equivalent 2N7002 chip die transistor

    srf 1714

    Abstract: PV22-3
    Text: El PV SERIES Piconics PV series has gold plated contact areas for bonding interconnecting leads. The bottom of the ceramic chip has a heavy gold plating for bonding the coil to a substrate. Please note that the PV series can be made with special substrate geometries for flip chip bonding. The core is slide tuned and may be fixed


    OCR Scan
    PDF M83446 M83446/17. MIL-STD-202, srf 1714 PV22-3

    Untitled

    Abstract: No abstract text available
    Text: PV SERIES Piconics PV series has gold plated contact areas for bonding interconnecting leads. The bottom of the ceramic chip has a heavy gold plating for bonding the coil to a substrate. Please note that the PV series can be made with special substrate geometries for flip chip bonding. The core is slide tuned and may be fixed


    OCR Scan
    PDF M83446 M83446/17. PV16arometric MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: MONOLITHIC CERAMIC CAPACITOR muftatn. ForWire-bonding/Die-bonding, M LC M icro Chip G M 250 Series •FEATURES 1. Better micro wave characteristics. 2. Suitable for by-passing 3. High density mounting ■APPLICATIONS • Optical device for telecommunication


    OCR Scan
    PDF GM250

    GM250

    Abstract: No abstract text available
    Text: MONOLITHIC CERAMIC CAPACITORS FOR WIRE-BONDING/DIE-BONDING MLC MICRO CHIP— GM250 SERIES m uffata /n/iomtvA in Electronics FEATURES • Better m icrowave characteristics ■ Suitable for by-passing ■ High density mounting APPLICATIONS ■ O ptical device for


    OCR Scan
    PDF GM250 2200pF C-22-C.