CHN 510
Abstract: CHN 844
Text: V i s hay I n t e r t e chn o l o g y, I nc . Capacitors - High Impulse Current Rating up to 10 kA AND TEC I INNOVAT O L OGY DCMKP N HN VISHAY ESTA Power Capacitors O 19 62-2012 Capacitors for Power Electronics Key Benefits • • • • • • High impulse current rating up to 10 kA
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15-Feb-11
VMN-PT9167-1201
CHN 510
CHN 844
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1/CHN 326
Abstract: No abstract text available
Text: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)
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SST39SF020
1/CHN 326
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Untitled
Abstract: No abstract text available
Text: 21Ü 16 Megabit FlashBank Memory SST38UF166 Advance Information FEATURES: • • • Single 2.2-2.8V Read and Write Operations Read Access Time Separate Memory Banks for Code or Data - - Latched Address and Data Superior Reliability End of Write Detection
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SST38UF166
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CHN 512
Abstract: CHN 314 1/CHN 852
Text: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)
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SST39SF512
CHN 512
CHN 314
1/CHN 852
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chn 348
Abstract: CHN 314 chn 317 CHN 852 chn 440
Text: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF020
32-Pin
SST37VF020
chn 348
CHN 314
chn 317
CHN 852
chn 440
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Untitled
Abstract: No abstract text available
Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/
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SST32LH802
128Kx16
SST32LH802
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Untitled
Abstract: No abstract text available
Text: 21Ü 1 Megabit 128K x 8 Multi-Purpose Flash SST39SF010 Data Sheet FEATURES: • Organized as 128K X 8 • Single 5.0V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention Low Power Consumption:
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SST39SF010
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Untitled
Abstract: No abstract text available
Text: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:
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SST39VF080Q_
SST39VF080Q
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27721
Abstract: No abstract text available
Text: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:
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SST39VF016Q_
SST39VF016Q
Multi58-4276
27721
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CHN 345 X
Abstract: No abstract text available
Text: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF040
32-Pin
SST37VF040
CHN 345 X
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PDF
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Untitled
Abstract: No abstract text available
Text: 512 Kilobit 64K x 8 SuperFlash MTP SST37VF512 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF512
32-Pin
SST37VF512
pro-657-0204
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chn 347
Abstract: No abstract text available
Text: 1 Megabit 128K x 8 SuperFlash MTP SST37VF010 Preliminary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
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SST37VF010
32-Pin
SST37VF010
chn 347
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PDF
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Untitled
Abstract: No abstract text available
Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)
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SST29EE512A
SST29LE512A
SST29VE512A
SST29EE512A
SST29LE512A
SST29EE512A/29LE512A/29VE512A
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Untitled
Abstract: No abstract text available
Text: i MF TRUNK RECEIVERS & TRANSMITTERS M-986-1R1 &-2R1 M l Transceivers Teltone M-986-1R1 and -2R1 MF Transceivers contain all the logic necessary to transmit and receive R1 multifrequency signals on one integrated circuit IC . M-986-1R1 is a sin gle-channel version; M-986-2R1 provides two channels.
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M-986-1R1
M-986-1R1
M-986-2R1
M-986-1R2
M-986
M-986,
M-986-1
TR-NPL-000275â
ISBN-0-471-86753-5
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TR-NPL-000275
Abstract: chn 825
Text: t C E U O N MF TRUNK RECEIVERS & TRANSMITTERS E M-986-1R2 & -2R2 MF Transceivers Teltone M-986-1R2 and -2R2 MFC Transceivers contain all the logic necessary to transmit and receive CCITT R2F forward and R2B (backward) multifrequency signals on one integrated circuit (IC). M-986-1R2 is a single-channel ver
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M-986-1R2
M-986-1R2
M-986-2R2
M-986-1R1
M-986
22121-20fh
M-986-R2
22121-20th
TR-NPL-000275
chn 825
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chn 731
Abstract: No abstract text available
Text: tC e l x d n e M-976-2C2 MFC Transceiver The Teltone M-976-2C2 MFC Transceiver contains all the logic necessary to transmit and receive MF signaling used in China, both forward and (backward) multifrequency signals on one integrated circuit (IC). The M-976 provides two
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M-976-2C2
M-976
M-976-2C2P
M-976-2C2PL
40-pin
44-pin
22121-20th
chn 731
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CHN 650
Abstract: chn 825 C1906
Text: ÌH ELX O N E Data Sheet M-976-2C2 MFC Transceiver • Designed for R2 MF signaling transmit and receive lev els used in China input. Each channel can be connected to an analog source using a coder-decoder codec as shown in Figure 1. • Direct A-Law PCM digital input
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M-976-2C2
M-976
M-976-2C2X
M-976-2C2P
40-pin
M-976-2C2PL
22121-20th
CHN 650
chn 825
C1906
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Digital Alarm Clock using 8051
Abstract: chn 448 chn 706 CHN 632 CHN 703 RAM 2112 256 word 32.768mhz pin hole thru chn 608 microcontroller 8051 application of alarm clock octal tri state buffer ic
Text: áç XRT84L38 OCTAL T1/E1/J1 FRAMER FEBRUARY 2004 REV. 1.0.0 GENERAL DESCRIPTION The XRT84L38 is an eight-channel 1.544 Mbit/s or 2.048 Mbit/s DS1/E1/J1 framing controller. The XRT84L38 contains an integrated DS1/E1/J1 framer which provides DS1/E1/J1 framing and error accumulation in accordance with ANSI/ITU_T specifications.
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XRT84L38
XRT84L38
Digital Alarm Clock using 8051
chn 448
chn 706
CHN 632
CHN 703
RAM 2112 256 word
32.768mhz pin hole thru
chn 608
microcontroller 8051 application of alarm clock
octal tri state buffer ic
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PDF
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rbs 6201 manual
Abstract: rbs 6201 POWER CONSUMPTION chn 452 rbs 6201 specification chn 710 SCR PIN CONFIGURATION CHN 035 RBS 6201 INFORMATION SDH 209 rbs 6201 LOP 36 AF
Text: XRT86L38 PRELIMINARY PRELIMINARY OCTAL T1/E1/J1 FRAMER/LIU COMBO NOVEMBER 2003 REV. P1.0.4 GENERAL DESCRIPTION The XRT86L38 is an eight-channel 1.544 Mbit/s or 2.048 Mbit/s DS1/E1/J1 framer and LIU integrated solution. The XRT86L38 contains an integrated DS1/
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XRT86L38
XRT86L38
TR54016,
G-703,
rbs 6201 manual
rbs 6201 POWER CONSUMPTION
chn 452
rbs 6201 specification
chn 710
SCR PIN CONFIGURATION CHN 035
RBS 6201 INFORMATION
SDH 209
rbs 6201
LOP 36 AF
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DDMA78P
Abstract: ddma78s chn 605 DD-78
Text: 1 *MA H ig h D ensity D C rim p P r i n t e d C irc u it See page 342) (See page 343) Perfo rm a n ce and M a te ria l S pecific a tio n s M A T E R IA L S A N D F IN IS H E S Standard M ilita ry M aterial Finish M aterial S h e lf S teel pe t A S T M A -6 2 0
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DD-78
CIET-22D
DDMA78P
ddma78s
chn 605
DD-78
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PDF
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chn 547
Abstract: chn 832 chn+547 CHN 927
Text: DESCRIPTION: HIGH DENSITY DIP SOLDER MALE SPECIFICATIONS: MATERIALS: SHELL: STEEL, NICKEL PLATED INSULATOR: UL 94V-0 RATED BLACK NYLON 9T RoHS COMPLIANT ELECTRICALS: CURRENT RATING: 2 AMPS CONTACT RESISTANCE: 15 mOHMS MAX INSULTOR RESISTANCE: 1000 MOHMS MIN
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10/SFS04404
180-YYY-113RYY1
chn 547
chn 832
chn+547
CHN 927
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PDF
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HMI Software SIMATIC ProTool
Abstract: TD200 display manual book PLC siemens S7-200 TP177B Wiring Diagram s7-200 siemens siemens simatic op17 siemens simatic op7 manual manual repair offline ups 600 va siemens simatic op7 Wiring Diagram s7-300 analog module
Text: Automation and Drives Human Machine Interface Postfach 4848 90327 NÜRNBERG Germany w w w. s i e m e n s .c o m/ a uto ma t i o n The information provided in this catalog contains descriptions or characteristics of performance which in case of actual use do not always apply as described
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E86060-K4680-A101-B4-7600
HMI Software SIMATIC ProTool
TD200 display
manual book PLC siemens S7-200
TP177B
Wiring Diagram s7-200 siemens
siemens simatic op17
siemens simatic op7 manual
manual repair offline ups 600 va
siemens simatic op7
Wiring Diagram s7-300 analog module
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PDF
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PAIRGAIN
Abstract: CHN 552 Motorola wireless router Type 0X69 BT8953EPF E1 PCM encoder RS8953B RS8953BEPF RS8953BEPJ RS8953SPB Water level indicator using 8051
Text: RS8953B/8953SPB HDSL Channel Unit The RS8953B is a High-Bit-Rate Digital Subscriber Line HDSL channel unit designed to perform data, clock, and format conversions necessary to construct a Pulse Code Multiplexed (PCM) channel from one, two, or three HDSL channels. The PCM channel
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RS8953B/8953SPB
RS8953B
Bt8370
Bt8970
PAIRGAIN
CHN 552
Motorola wireless router Type 0X69
BT8953EPF
E1 PCM encoder
RS8953BEPF
RS8953BEPJ
RS8953SPB
Water level indicator using 8051
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PDF
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Untitled
Abstract: No abstract text available
Text: J d t 3.3V CMOS STATIC RAM 4 MEG 512K X 8-BIT) ADVANCE r o V424S IDT71V424L I n t e g r a t e d D e i/ ic e T e c h n o l o g y , I n c . FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise
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V424S
IDT71V424L
10/12/15ns
36-pin,
44-pin,
IDT71V424
304-bit
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