CHN 550
Abstract: CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent
Text: R&S ZNC/ZND Vector Network Analyzers User Manual ;xíÇ2 User Manual Test & Measurement 1173.9557.02 ─ 26 This manual describes the following vector network analyzer types: ● R&S®ZNC3 (2 ports, 9 kHz to 3 GHz, N connectors), order no. 1311.6004K12
|
Original
|
PDF
|
6004K12
ZNC-B10
ZN-B14
ZNC-B19
ZNC3-B22
ZNC-K19
VXI-11
CHN 550
CHN 545
chn 710
CHN 712
chn 538
CHN 431
CHN 709
CHN 741
chn 738
chn 648 equivalent
|
CHN 234 diode
Abstract: dali master schematic GRM188B31H104KA92D DMX RECEIVER diode chn 115 dali power supply circuit diagram dmx512 RK73B1 chn 711 dali schematic
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
G0706
CHN 234 diode
dali master schematic
GRM188B31H104KA92D
DMX RECEIVER
diode chn 115
dali power supply circuit diagram
dmx512
RK73B1
chn 711
dali schematic
|
ST CHN 510
Abstract: 83C97 chn 809 chn 809 ST
Text: 83C97 T e chn o log y, In co rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface and Serial Port PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation S ym bol indentifies product as A u to D U P L E X device. Description
|
OCR Scan
|
PDF
|
83C97
10BASE-T
83C97
10BASET)
ST CHN 510
chn 809
chn 809 ST
|
chn 809
Abstract: chn 809 ST Transistor TT 2246 transistor chn 037 MO40 TT 2246 transistor capacitor JA8 KMA Series 232 pin diagram of BC 547 SABRE 408
Text: 83C95 T e chn o log y, Inco rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters And AUI PRELIMINARY October 1994 S E E Q A u to D U P L E X D esignation Symbol indentifies product as AutoDUPLEX device. D escription The 83C95 is a highly integrated analog interface 1C for
|
OCR Scan
|
PDF
|
83C95
10BASE-T
83C95
10BASET)
10BASET
chn 809
chn 809 ST
Transistor TT 2246
transistor chn 037
MO40
TT 2246 transistor
capacitor JA8
KMA Series 232
pin diagram of BC 547
SABRE 408
|
Transistor TT 2246
Abstract: transistor chn 911 TT 2246 transistor jm31a pulse electronics era transformer transistor chn 037 chn 809 S4744
Text: SEEQ T e chn o log y, Inco rp o rate d 83C96 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation Sym bol indentifies product as A u to D U P L E X device. Description The 83C96 is a highly integrated analog interface 1C for
|
OCR Scan
|
PDF
|
83C96
10BASE-T
83C96
10BASET)
10BASET
Transistor TT 2246
transistor chn 911
TT 2246 transistor
jm31a
pulse electronics era transformer
transistor chn 037
chn 809
S4744
|
1/CHN 326
Abstract: No abstract text available
Text: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)
|
OCR Scan
|
PDF
|
SST39SF020
1/CHN 326
|
CHN 816
Abstract: chn 823 chn 817 ST CHN 510 1300-CSM BT225 CHN 823 diode CHN 510 SLC-500 ST CHN t4
Text: Print I/O Ink, Damp and Register Modules Catalog Number 1300-GDI, 1300-CCM, 1300-PWM and 1300-CSM Technical Data Typical Print I/O Arrangement Dedicated Purpose and Functionality. Print I/O is a t0WTC0St modular I/O system for specific applications that offer all the functions
|
OCR Scan
|
PDF
|
1300-GDI,
1300-CCM,
1300-PWM
1300-CSM)
130Q-TD001A-US-P
1300-TD001
CHN 816
chn 823
chn 817
ST CHN 510
1300-CSM
BT225
CHN 823 diode
CHN 510
SLC-500
ST CHN t4
|
Untitled
Abstract: No abstract text available
Text: 21Ü 16 Megabit FlashBank Memory SST38UF166 Advance Information FEATURES: • • • Single 2.2-2.8V Read and Write Operations Read Access Time Separate Memory Banks for Code or Data - - Latched Address and Data Superior Reliability End of Write Detection
|
OCR Scan
|
PDF
|
SST38UF166
|
CHN 512
Abstract: CHN 314 1/CHN 852
Text: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)
|
OCR Scan
|
PDF
|
SST39SF512
CHN 512
CHN 314
1/CHN 852
|
chn 348
Abstract: CHN 314 chn 317 CHN 852 chn 440
Text: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
|
OCR Scan
|
PDF
|
SST37VF020
32-Pin
SST37VF020
chn 348
CHN 314
chn 317
CHN 852
chn 440
|
Untitled
Abstract: No abstract text available
Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/
|
OCR Scan
|
PDF
|
SST32LH802
128Kx16
SST32LH802
|
Untitled
Abstract: No abstract text available
Text: 21Ü 1 Megabit 128K x 8 Multi-Purpose Flash SST39SF010 Data Sheet FEATURES: • Organized as 128K X 8 • Single 5.0V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention Low Power Consumption:
|
OCR Scan
|
PDF
|
SST39SF010
|
Untitled
Abstract: No abstract text available
Text: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:
|
OCR Scan
|
PDF
|
SST39VF080Q_
SST39VF080Q
|
27721
Abstract: No abstract text available
Text: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:
|
OCR Scan
|
PDF
|
SST39VF016Q_
SST39VF016Q
Multi58-4276
27721
|
|
|
CHN 345 X
Abstract: No abstract text available
Text: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
|
OCR Scan
|
PDF
|
SST37VF040
32-Pin
SST37VF040
CHN 345 X
|
CHN 602
Abstract: CHN 847
Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020 3.0-3.6V for the SST29LE020 2.7-3.6V for the SST29VE020
|
OCR Scan
|
PDF
|
SST29EE020
SST29LE020
SST29VE020
CHN 602
CHN 847
|
CHN 847
Abstract: chn 734
Text: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • • - • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low Power Consumption
|
OCR Scan
|
PDF
|
SST29EE010
SST29LE010
SST29VE010
and-1102
CHN 847
chn 734
|
CHN 847
Abstract: 29EE512
Text: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512 / SST29LE512 / SST29VE512 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • 5.0V-only for SST29EE512 3.0-3.6V for SST29LE512 2.7-3.6V for SST29VE512 Fast Read Access Time - 5.0V-only operation: 70 and 90 ns
|
OCR Scan
|
PDF
|
SST29EE512
SST29LE512
SST29VE512
CHN 847
29EE512
|
Untitled
Abstract: No abstract text available
Text: 512 Kilobit 64K x 8 SuperFlash MTP SST37VF512 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
|
OCR Scan
|
PDF
|
SST37VF512
32-Pin
SST37VF512
pro-657-0204
|
Untitled
Abstract: No abstract text available
Text: f r 2 Megabit 128K x 16-Bit Multi-Purpose Flash SST39VF200 Advance Information FEATURES: • Organized as 128K x16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - • • Uniform 32 KWord blocks Fast Read Access Time: - • Uniform 2 KWord sectors
|
OCR Scan
|
PDF
|
16-Bit)
SST39VF200
|
TEKELEC te 306
Abstract: 30601
Text: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020A 3.0-3.6V for the SST29LE020A 2.7-3.6V for the SST29VE020A
|
OCR Scan
|
PDF
|
SST29EE020A
SST29LE020A
SST29VE020A
Reliability526-1102
TEKELEC te 306
30601
|
actron ab
Abstract: 11a18 CHN 949 VF800
Text: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention
|
OCR Scan
|
PDF
|
16-Bit)
SST39VF800Q
SST39VF800
SST39VF800Q
actron ab
11a18
CHN 949
VF800
|
CHN 329
Abstract: DP 904C
Text: 21Ü 16 Megabit 1M x 16-Bit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information FEATURES: • Organized as 1 M X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention
|
OCR Scan
|
PDF
|
16-Bit)
SST39VF160Q
SST39VF160
SST39VF160Q
CHN 329
DP 904C
|
chn 347
Abstract: No abstract text available
Text: 1 Megabit 128K x 8 SuperFlash MTP SST37VF010 Preliminary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention
|
OCR Scan
|
PDF
|
SST37VF010
32-Pin
SST37VF010
chn 347
|
