CHN 640 Search Results
CHN 640 Datasheets Context Search
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Contextual Info: PRECISION BULK METAL FOIL TE CHN OL OG Y A COMPANY V VISHAY CUSTOM CHIP NETWORKS AND RESISTOR ARRAYS I S H A OF Y VISHAY RESISTORS for Use in Hybrid Circuits RESISTOR NETWORK CHIPS AND ARRAYS Vishay manufactures custom precision resistor arrays; ranging |
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and/transistor chn 749Contextual Info: PRECISION BULK METAL FOIL TE CHN OL OG Y a company V I S H A of Y VISHAY MODELS VISHAY 1442, 1445 and 1446 RESISTORS Dual-ln-Line Hermetic Resistor Networks Vishay Model 1442, 1445 and 1446 networks incorporate all the performance features of Vishay Bulk Metal® Foil technology. The |
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VSM42, VSM45 and/transistor chn 749 | |
Contextual Info: PRECISION BULK METAL FOIL TE CHN OL OG Y a company “ V I S H A of Y VISHAY VISHAY MODEL 1413 RESISTO RS 8 Pin TVansistor Outline Hermetic Resistor Network The eight pin TO-5 package with a 0.200“ pin circle, is the most popular package for uncomplicated networks. |
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chn 610Contextual Info: PRECISION BULK METAL FOIL TE CHN OL OG Y A COMPANY OF V I S H A Y VISHAY VISHAY MODELS 300144 and 300145 RESISTORS Small Package, Ultimate Tracking Voltage Dividers FEATURES • Temperature Coefficient of Resistance: See Figures 1 and 2, page 13 TCR Tracking: to ±0.5 ppm/°C |
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1K/10K VHD200 chn 610 | |
ST CHN 510
Abstract: 83C97 chn 809 chn 809 ST
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83C97 10BASE-T 83C97 10BASET) ST CHN 510 chn 809 chn 809 ST | |
Contextual Info: MOS LSI T M S 4025 NC 2048-BIT DYNAMIC RANDOM-ACCESS MEMORY features • L o w pow er dissip ation • Full decode • A ccess tim e — 280 nsec m ax • Cycle tim e — 64 0 nsec m ax • H igh output-current cap ab ility 2 m A ty p • Low -threshold te chn o lo gy |
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2048-BIT 24-pin 1024-w 1024-bit 10-bit | |
chn 809
Abstract: chn 809 ST Transistor TT 2246 transistor chn 037 MO40 TT 2246 transistor capacitor JA8 KMA Series 232 pin diagram of BC 547 SABRE 408
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83C95 10BASE-T 83C95 10BASET) 10BASET chn 809 chn 809 ST Transistor TT 2246 transistor chn 037 MO40 TT 2246 transistor capacitor JA8 KMA Series 232 pin diagram of BC 547 SABRE 408 | |
Transistor TT 2246
Abstract: transistor chn 911 TT 2246 transistor jm31a pulse electronics era transformer transistor chn 037 chn 809 S4744
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83C96 10BASE-T 83C96 10BASET) 10BASET Transistor TT 2246 transistor chn 911 TT 2246 transistor jm31a pulse electronics era transformer transistor chn 037 chn 809 S4744 | |
chn 610Contextual Info: PRECISION BULK METAL FOIL “ TE CHN OL OG Y “ GLOSSARY a c o m p a n y V I S H A of Y VISHAY RESISTORS ACCURACY: The degree to which the measured value of resistance approximates the specified value of resistance. This is normally expressed in percent deviation but in precision resistor work, the percent is often so small that the results are |
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chn 610Contextual Info: PRECISION BULK METAL FOIL TE CHN OL OG Y a c o m p a n y o f V I S H A Y VISHAY VISHAY M ODEL 1401 RESISTORS 3 Pin Transistor Outline Hermetic Resistor Network The three pin TO-18 package is suitable for single resistor hermetic packaging with case and lid grounded for electrical isolation. This |
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Contextual Info: PRECISION BULK METAL FOIL TE CHN OL OG Y a c o m p a n y o f V I S H A Y VISHAY VISHAY MODEL 1476 RESISTORS 30 Pin Flatpack H erm etic Resistor N etw ork The 30 pin 1" x 1" flatpack is the largest ceramic package offered by Vishay. It will accommodate the greatest number of resistor |
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BIT/12 | |
transistor dv4
Abstract: IN213 8A
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14-bit 550pA MAX110) transistor dv4 IN213 8A | |
CHN 550
Abstract: CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent
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6004K12 ZNC-B10 ZN-B14 ZNC-B19 ZNC3-B22 ZNC-K19 VXI-11 CHN 550 CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent | |
1/CHN 326Contextual Info: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical) |
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SST39SF020 1/CHN 326 | |
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CHN 512
Abstract: CHN 314 1/CHN 852
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SST39SF512 CHN 512 CHN 314 1/CHN 852 | |
chn 348
Abstract: CHN 314 chn 317 CHN 852 chn 440
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SST37VF020 32-Pin SST37VF020 chn 348 CHN 314 chn 317 CHN 852 chn 440 | |
Contextual Info: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/ |
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SST32LH802 128Kx16 SST32LH802 | |
Contextual Info: 21Ü 1 Megabit 128K x 8 Multi-Purpose Flash SST39SF010 Data Sheet FEATURES: • Organized as 128K X 8 • Single 5.0V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention Low Power Consumption: |
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SST39SF010 | |
Contextual Info: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program: |
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SST39VF080Q_ SST39VF080Q | |
27721Contextual Info: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program: |
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SST39VF016Q_ SST39VF016Q Multi58-4276 27721 | |
oasis
Abstract: SST39VF400 SST39VF400 read code
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16-Bit) SST39VF400 oasis SST39VF400 SST39VF400 read code | |
CHN 345 XContextual Info: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention |
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SST37VF040 32-Pin SST37VF040 CHN 345 X | |
CHN 602
Abstract: CHN 847
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SST29EE020 SST29LE020 SST29VE020 CHN 602 CHN 847 | |
CHN 847
Abstract: chn 734
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SST29EE010 SST29LE010 SST29VE010 and-1102 CHN 847 chn 734 |